NL2010802C2 - Charged particle lithography system and beam generator. - Google Patents
Charged particle lithography system and beam generator. Download PDFInfo
- Publication number
- NL2010802C2 NL2010802C2 NL2010802A NL2010802A NL2010802C2 NL 2010802 C2 NL2010802 C2 NL 2010802C2 NL 2010802 A NL2010802 A NL 2010802A NL 2010802 A NL2010802 A NL 2010802A NL 2010802 C2 NL2010802 C2 NL 2010802C2
- Authority
- NL
- Netherlands
- Prior art keywords
- cooling
- generator
- chamber
- lithography system
- collimator
- Prior art date
Links
- 239000002245 particle Substances 0.000 title claims abstract description 76
- 238000001459 lithography Methods 0.000 title claims description 60
- 238000001816 cooling Methods 0.000 claims abstract description 50
- 239000012809 cooling fluid Substances 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims 2
- 230000001105 regulatory effect Effects 0.000 abstract description 2
- 229930195733 hydrocarbon Natural products 0.000 description 13
- 150000002430 hydrocarbons Chemical class 0.000 description 13
- 238000000313 electron-beam-induced deposition Methods 0.000 description 12
- 238000005086 pumping Methods 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 10
- 239000000356 contaminant Substances 0.000 description 8
- 239000004215 Carbon black (E152) Substances 0.000 description 7
- 238000003491 array Methods 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000004075 alteration Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000110 cooling liquid Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010943 off-gassing Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000595 mu-metal Inorganic materials 0.000 description 1
- 238000002039 particle-beam lithography Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
- H01J2237/0262—Shields electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
- H01J2237/0264—Shields magnetic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/16—Vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/182—Obtaining or maintaining desired pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/188—Differential pressure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2013321A NL2013321C2 (en) | 2012-05-14 | 2014-08-12 | Charged particle lithography system and beam generator. |
| NL2013320A NL2013320C2 (en) | 2012-05-14 | 2014-08-12 | Charged particle lithography system and beam generator. |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261646839P | 2012-05-14 | 2012-05-14 | |
| US201261646839 | 2012-05-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL2010802A NL2010802A (en) | 2013-11-18 |
| NL2010802C2 true NL2010802C2 (en) | 2014-08-25 |
Family
ID=48463976
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2010802A NL2010802C2 (en) | 2012-05-14 | 2013-05-14 | Charged particle lithography system and beam generator. |
| NL2010797A NL2010797C2 (en) | 2012-05-14 | 2013-05-14 | Charged particle lithography system and beam generator. |
| NL2013321A NL2013321C2 (en) | 2012-05-14 | 2014-08-12 | Charged particle lithography system and beam generator. |
| NL2013320A NL2013320C2 (en) | 2012-05-14 | 2014-08-12 | Charged particle lithography system and beam generator. |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2010797A NL2010797C2 (en) | 2012-05-14 | 2013-05-14 | Charged particle lithography system and beam generator. |
| NL2013321A NL2013321C2 (en) | 2012-05-14 | 2014-08-12 | Charged particle lithography system and beam generator. |
| NL2013320A NL2013320C2 (en) | 2012-05-14 | 2014-08-12 | Charged particle lithography system and beam generator. |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US9653261B2 (enExample) |
| EP (1) | EP2852966A1 (enExample) |
| JP (3) | JP6239596B2 (enExample) |
| KR (2) | KR102023056B1 (enExample) |
| CN (3) | CN104520968B (enExample) |
| NL (4) | NL2010802C2 (enExample) |
| TW (2) | TW201401330A (enExample) |
| WO (2) | WO2013171229A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9466453B2 (en) * | 2013-12-30 | 2016-10-11 | Mapper Lithography Ip B.V. | Cathode arrangement, electron gun, and lithography system comprising such electron gun |
| CN106463347B (zh) * | 2014-06-13 | 2020-09-15 | 英特尔公司 | 即时电子束对准 |
| JP2017135218A (ja) * | 2016-01-26 | 2017-08-03 | 株式会社アドバンテスト | 荷電粒子ビームレンズ装置、荷電粒子ビームカラム、および荷電粒子ビーム露光装置 |
| JP2017139339A (ja) * | 2016-02-04 | 2017-08-10 | 株式会社アドバンテスト | 露光装置 |
| US9981293B2 (en) | 2016-04-21 | 2018-05-29 | Mapper Lithography Ip B.V. | Method and system for the removal and/or avoidance of contamination in charged particle beam systems |
| US10453645B2 (en) * | 2016-12-01 | 2019-10-22 | Applied Materials Israel Ltd. | Method for inspecting a specimen and charged particle multi-beam device |
| CA3229072A1 (en) * | 2017-01-18 | 2018-08-09 | Shine Technologies, Llc | High power ion beam generator systems and methods |
| US10176967B2 (en) * | 2017-02-23 | 2019-01-08 | Hermes Microvision, Inc. | Load lock system for charged particle beam imaging |
| NL2021217B1 (en) * | 2018-06-29 | 2020-01-07 | Asml Netherlands Bv | Substrate exposure system and a frame therefore |
| DE102019005362A1 (de) * | 2019-07-31 | 2021-02-04 | Carl Zeiss Multisem Gmbh | Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem |
| JP2021039880A (ja) | 2019-09-03 | 2021-03-11 | 株式会社日立ハイテク | 荷電粒子線装置 |
| KR20230065267A (ko) * | 2020-09-07 | 2023-05-11 | 에이에스엠엘 네델란즈 비.브이. | 전자기 차폐부를 포함하는 전자-광학 조립체 |
| WO2023197131A1 (zh) * | 2022-04-12 | 2023-10-19 | 华为技术有限公司 | 一种可调整的多电极准直装置 |
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2013
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- 2013-05-14 JP JP2015512032A patent/JP6239596B2/ja active Active
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| EP2852966A1 (en) | 2015-04-01 |
| NL2010797C2 (en) | 2014-08-21 |
| WO2013171229A1 (en) | 2013-11-21 |
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| NL2013320A (en) | 2014-11-24 |
| KR102023056B1 (ko) | 2019-09-20 |
| KR20150010994A (ko) | 2015-01-29 |
| CN104428866A (zh) | 2015-03-18 |
| US20150124229A1 (en) | 2015-05-07 |
| JP2015516690A (ja) | 2015-06-11 |
| US20170250053A1 (en) | 2017-08-31 |
| NL2013321A (en) | 2014-11-06 |
| NL2010797A (en) | 2013-11-18 |
| CN107359101A (zh) | 2017-11-17 |
| WO2013171214A1 (en) | 2013-11-21 |
| NL2013321C2 (en) | 2015-05-07 |
| JP2015517735A (ja) | 2015-06-22 |
| JP6430606B2 (ja) | 2018-11-28 |
| KR20150010993A (ko) | 2015-01-29 |
| JP6239596B2 (ja) | 2017-11-29 |
| TWI604493B (zh) | 2017-11-01 |
| CN107359101B (zh) | 2019-07-12 |
| JP6219374B2 (ja) | 2017-10-25 |
| TW201401330A (zh) | 2014-01-01 |
| NL2010802A (en) | 2013-11-18 |
| KR101961914B1 (ko) | 2019-03-25 |
| TW201401331A (zh) | 2014-01-01 |
| CN104520968A (zh) | 2015-04-15 |
| JP2018041964A (ja) | 2018-03-15 |
| NL2013320C2 (en) | 2015-06-15 |
| US10037864B2 (en) | 2018-07-31 |
| CN104520968B (zh) | 2017-07-07 |
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