JP4949843B2 - 荷電粒子ビームレット露光システム - Google Patents
荷電粒子ビームレット露光システム Download PDFInfo
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- JP4949843B2 JP4949843B2 JP2006532135A JP2006532135A JP4949843B2 JP 4949843 B2 JP4949843 B2 JP 4949843B2 JP 2006532135 A JP2006532135 A JP 2006532135A JP 2006532135 A JP2006532135 A JP 2006532135A JP 4949843 B2 JP4949843 B2 JP 4949843B2
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- charged particle
- aperture
- beamlet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
- H01J2237/0435—Multi-aperture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0451—Diaphragms with fixed aperture
- H01J2237/0453—Diaphragms with fixed aperture multiple apertures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1501—Beam alignment means or procedures
Description
第一の絞り手段は、少なくとも第一の実質的に丸い絞りを備えていて、発せられた荷電粒子ビームを部分的に遮断し、少なくとも一つの荷電粒子ビームレットを形成し、
レンズ系は、少なくとも一つのレンズを備えていて、前記粒子ビームレット、これは前記第一の絞りから生じるか到着する、を前記レンズの結像焦点面内またはその近くに集束させ、
偏向手段は、前記結像焦点面内に実質的に配置されており、少なくとも一つのビームレット偏向器を備えていて、前記偏向器を通過する前記荷電粒子ビームレットを制御信号の受信と同時に偏向し、
第二の絞り手段は、第一の絞りの共役平面内に位置する少なくとも一つの第二の実質的に丸い絞りを備えていて、前記第二の絞り手段は前記第一の絞り手段および前記ビームレット偏向器と整列しており、前記ビームレット偏向器による偏向と同時に前記荷電粒子ビームレットを遮断し、さもなければそれを透過する。
Claims (13)
- 複数の荷電粒子ビームレットを使用する荷電粒子ビーム露光装置であり、
複数の第一の実質的に丸い絞りを備えた第一の絞り手段を備えており、前記第一の絞りは、それぞれ、荷電粒子ビームレットを部分的に遮断し、
複数のレンズを備えたレンズ系を備えており、前記レンズは、それぞれ、前記第一の絞りから生じる前記荷電粒子ビームレットを前記レンズの結像焦点面またはその近くに集束させ、
前記結像焦点面に実質的に配置された複数のビームレット偏向器を備えた偏向手段を備えており、前記ビームレット偏向器は、それぞれ、制御信号の受信に対して前記偏向器を通過する前記荷電粒子ビームレットを偏向し、
前記第一の絞り手段の共役平面に位置する複数の第二の実質的に丸い絞りを備えた第二の絞り手段を備えており、前記第二の絞り手段は前記第一の絞り手段および前記ビームレット偏向器と整列していて、前記ビームレット偏向器による偏向に対して前記荷電粒子ビームレットを遮断し、そうでないときには前記荷電粒子ビームレットを透過し、前記第一および第二の絞り手段は、前記ビームレットの上流方向に見たときに、前記ビームレットの開口角を制限するために位置している荷電粒子ビーム露光装置。 - 請求項1において、前記レンズ系が前記第一の絞りと前記偏向手段の間に位置している荷電粒子ビーム露光装置。
- 請求項1において、前記複数の前記第一の絞りは絞りアレイを形成しており、これは各ビームレットに一つの絞りを有しており、前記複数の前記レンズはレンズのアレイを形成しており、各レンズは第一の絞り手段からの複数の荷電粒子ビームレットの一つを集束させるように位置しており、前記複数の前記第二の絞りは絞りアレイを形成している荷電粒子ビーム露光装置。
- 請求項1または3において、前記レンズが静電レンズから構成されている荷電粒子ビーム露光装置。
- 請求項1において、前記ビームレット偏向器が静電偏向器から構成されている荷電粒子ビーム露光装置。
- 請求項5において、前記静電偏向器が少なくとも二つの偏向電極を備えている荷電粒子ビーム露光装置。
- 請求項3において、第二のレンズ系をさらに備えており、これは、前記第一の絞り手段の前に配置されていて、複数のレンズを備えており、これらはレンズのアレイを形成しており、前記レンズは前記ビームレットを集束するために配置されている荷電粒子ビーム露光装置。
- 請求項7において、前記第一の絞り手段の前に配置された複数のレンズを備えた第三のレンズ系をさらに備えており、前記第三のレンズ系のレンズは、前記第二のレンズ系の主要な平面内に荷電粒子ビーム露光装置の源の像を投影するように配置されており、荷電粒子ビーム露光装置はさらに第三の絞りアレイを備えており、第二のレンズアレイは前記第三の絞りアレイの像を前記第一の絞りアレイ上に投影するように配置されている荷電粒子ビーム露光装置。
- 請求項1〜8のいずれかにおいて、前記荷電粒子ビームまたは荷電粒子ビームレットが電子ビームである荷電粒子ビーム露光装置。
- 請求項1〜8のいずれかにおいて、前記荷電粒子ビームまたは荷電粒子ビームレットがイオンビームである荷電粒子ビーム露光装置。
- 請求項1〜10のいずれか一つの荷電粒子ビーム露光装置を備えている荷電粒子ビームリソグラフィシステム。
- 請求項1〜10のいずれか一つの荷電粒子ビーム露光装置を備えている荷電粒子ビーム検鏡システム。
- 請求項1〜10のいずれか一つにおいて、少なくとも一つのさらなる絞りアレイと少なくとも一つのさらなるレンズアレイとを備えており、レンズアレイは各絞りアレイ間に位置していて、先の絞りアレイを次の絞りアレイに結像させるように配置されている荷電粒子ビーム露光装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US47381003P | 2003-05-28 | 2003-05-28 | |
US60/473,810 | 2003-05-28 | ||
PCT/NL2004/000381 WO2004107050A2 (en) | 2003-05-28 | 2004-05-27 | Charged particle beamlet exposure system |
Publications (3)
Publication Number | Publication Date |
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JP2007500948A JP2007500948A (ja) | 2007-01-18 |
JP2007500948A5 JP2007500948A5 (ja) | 2007-07-12 |
JP4949843B2 true JP4949843B2 (ja) | 2012-06-13 |
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JP2006532135A Expired - Fee Related JP4949843B2 (ja) | 2003-05-28 | 2004-05-27 | 荷電粒子ビームレット露光システム |
Country Status (8)
Country | Link |
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US (1) | US7084414B2 (ja) |
EP (2) | EP1627412B1 (ja) |
JP (1) | JP4949843B2 (ja) |
KR (2) | KR101168200B1 (ja) |
CN (1) | CN100543920C (ja) |
AT (2) | ATE524822T1 (ja) |
DE (1) | DE602004005704T2 (ja) |
WO (1) | WO2004107050A2 (ja) |
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Publication number | Publication date |
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KR20060036391A (ko) | 2006-04-28 |
KR101168200B1 (ko) | 2012-07-25 |
US7084414B2 (en) | 2006-08-01 |
EP1627412A2 (en) | 2006-02-22 |
ATE358885T1 (de) | 2007-04-15 |
EP1830384B1 (en) | 2011-09-14 |
KR20120025629A (ko) | 2012-03-15 |
ATE524822T1 (de) | 2011-09-15 |
WO2004107050A3 (en) | 2005-04-21 |
EP1830384A2 (en) | 2007-09-05 |
WO2004107050A2 (en) | 2004-12-09 |
EP1627412B1 (en) | 2007-04-04 |
US20050161621A1 (en) | 2005-07-28 |
KR101175523B1 (ko) | 2012-08-21 |
CN100543920C (zh) | 2009-09-23 |
EP1830384A3 (en) | 2007-09-19 |
JP2007500948A (ja) | 2007-01-18 |
CN1795529A (zh) | 2006-06-28 |
DE602004005704T2 (de) | 2007-12-27 |
DE602004005704D1 (de) | 2007-05-16 |
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