KR102023056B1 - 하전 입자 리소그래피 시스템 및 빔 생성기 - Google Patents

하전 입자 리소그래피 시스템 및 빔 생성기 Download PDF

Info

Publication number
KR102023056B1
KR102023056B1 KR1020147035221A KR20147035221A KR102023056B1 KR 102023056 B1 KR102023056 B1 KR 102023056B1 KR 1020147035221 A KR1020147035221 A KR 1020147035221A KR 20147035221 A KR20147035221 A KR 20147035221A KR 102023056 B1 KR102023056 B1 KR 102023056B1
Authority
KR
South Korea
Prior art keywords
charged particle
particle beam
chamber
beam generator
pumps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020147035221A
Other languages
English (en)
Korean (ko)
Other versions
KR20150010993A (ko
Inventor
알렉산더 헨드릭 빈센트 반 빈
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20150010993A publication Critical patent/KR20150010993A/ko
Application granted granted Critical
Publication of KR102023056B1 publication Critical patent/KR102023056B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0262—Shields electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0264—Shields magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/182—Obtaining or maintaining desired pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/188—Differential pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020147035221A 2012-05-14 2013-05-14 하전 입자 리소그래피 시스템 및 빔 생성기 Active KR102023056B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646839P 2012-05-14 2012-05-14
US61/646,839 2012-05-14
PCT/EP2013/059945 WO2013171214A1 (en) 2012-05-14 2013-05-14 Charged particle lithography system and beam generator

Publications (2)

Publication Number Publication Date
KR20150010993A KR20150010993A (ko) 2015-01-29
KR102023056B1 true KR102023056B1 (ko) 2019-09-20

Family

ID=48463976

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020147035222A Active KR101961914B1 (ko) 2012-05-14 2013-05-14 하전 입자 리소그래피 시스템 및 빔 생성기
KR1020147035221A Active KR102023056B1 (ko) 2012-05-14 2013-05-14 하전 입자 리소그래피 시스템 및 빔 생성기

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020147035222A Active KR101961914B1 (ko) 2012-05-14 2013-05-14 하전 입자 리소그래피 시스템 및 빔 생성기

Country Status (8)

Country Link
US (2) US9653261B2 (enExample)
EP (1) EP2852966A1 (enExample)
JP (3) JP6219374B2 (enExample)
KR (2) KR101961914B1 (enExample)
CN (3) CN107359101B (enExample)
NL (4) NL2010802C2 (enExample)
TW (2) TWI604493B (enExample)
WO (2) WO2013171214A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015101537A1 (en) * 2013-12-30 2015-07-09 Mapper Lithography Ip B.V. Cathode arrangement, electron gun, and lithography system comprising such electron gun
JP6779788B2 (ja) * 2014-06-13 2020-11-04 インテル・コーポレーション リアルタイムアラインメント方法、カラム、コンピュータプログラム及びコンピュータ可読記憶媒体
JP2017135218A (ja) * 2016-01-26 2017-08-03 株式会社アドバンテスト 荷電粒子ビームレンズ装置、荷電粒子ビームカラム、および荷電粒子ビーム露光装置
JP2017139339A (ja) * 2016-02-04 2017-08-10 株式会社アドバンテスト 露光装置
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
US10453645B2 (en) * 2016-12-01 2019-10-22 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle multi-beam device
EP4277017A3 (en) * 2017-01-18 2024-02-21 SHINE Technologies, LLC High power ion beam generator systems and methods
US10176967B2 (en) * 2017-02-23 2019-01-08 Hermes Microvision, Inc. Load lock system for charged particle beam imaging
NL2021217B1 (en) * 2018-06-29 2020-01-07 Asml Netherlands Bv Substrate exposure system and a frame therefore
DE102019005362A1 (de) 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
JP2021039880A (ja) 2019-09-03 2021-03-11 株式会社日立ハイテク 荷電粒子線装置
KR20230065267A (ko) * 2020-09-07 2023-05-11 에이에스엠엘 네델란즈 비.브이. 전자기 차폐부를 포함하는 전자-광학 조립체
CN118974871A (zh) * 2022-04-12 2024-11-15 华为技术有限公司 一种可调整的多电极准直装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002231606A (ja) 2001-01-31 2002-08-16 Advantest Corp 電子ビーム露光装置及び電子レンズ
JP2005020009A (ja) 2003-06-27 2005-01-20 Asml Netherlands Bv リソグラフィ投影装置およびデバイス製造方法
JP2006139958A (ja) 2004-11-10 2006-06-01 Toshiba Corp 荷電ビーム装置

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US3924136A (en) * 1975-02-18 1975-12-02 Stanford Research Inst Charged particle apodized pattern imaging and exposure system
US4142133A (en) 1976-10-20 1979-02-27 Balandin Genrikh D Cathode-ray tube with variable energy of beam electrons
DE3231036A1 (de) * 1982-08-20 1984-02-23 Max Planck Gesellschaft Kombinierte elektrostatische objektiv- und emissionslinse
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
WO1994025880A1 (en) 1993-04-30 1994-11-10 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
JP3253429B2 (ja) 1993-09-17 2002-02-04 富士通株式会社 電子ビーム装置
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
JP3763446B2 (ja) 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
TW521295B (en) * 1999-12-13 2003-02-21 Semequip Inc Ion implantation ion source, system and method
KR100465117B1 (ko) * 2000-04-04 2005-01-05 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티빔 노광장치, 복수의 전자빔을집속하는 다축전자렌즈, 반도체소자 제조방법
JP3728217B2 (ja) * 2000-04-27 2005-12-21 キヤノン株式会社 荷電粒子線露光装置およびデバイス製造方法
GB0029040D0 (en) * 2000-11-29 2001-01-10 Micromass Ltd Orthogonal time of flight mass spectrometer
JP2002217091A (ja) * 2001-01-19 2002-08-02 Nikon Corp 荷電粒子線露光装置
US6797953B2 (en) 2001-02-23 2004-09-28 Fei Company Electron beam system using multiple electron beams
US6768125B2 (en) 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
CN100359626C (zh) * 2002-06-15 2008-01-02 Nfab有限公司 粒子束发生器
JP2004063547A (ja) 2002-07-25 2004-02-26 Nikon Corp 真空雰囲気下露光装置
EP1388883B1 (en) * 2002-08-07 2013-06-05 Fei Company Coaxial FIB-SEM column
EP2302459A3 (en) 2002-10-25 2011-04-06 Mapper Lithography Ip B.V. Lithography system
EP1556881B1 (en) 2002-10-30 2013-08-28 Mapper Lithography Ip B.V. Electron beam exposure system
JP2004214480A (ja) 2003-01-07 2004-07-29 Nikon Corp 露光装置
EP1602121B1 (en) 2003-03-10 2012-06-27 Mapper Lithography Ip B.V. Apparatus for generating a plurality of beamlets
JP4113032B2 (ja) 2003-04-21 2008-07-02 キヤノン株式会社 電子銃及び電子ビーム露光装置
ATE358885T1 (de) 2003-05-28 2007-04-15 Mapper Lithography Ip Bv Beamlet-belichtungssystem mit geladenen teilchen
EP1498930A1 (en) 2003-07-14 2005-01-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with multi-source array
CN1829945B (zh) 2003-07-30 2010-05-05 迈普尔平版印刷Ip有限公司 调制器电路
GB2406704B (en) * 2003-09-30 2007-02-07 Ims Nanofabrication Gmbh Particle-optic electrostatic lens
JP2005127800A (ja) 2003-10-22 2005-05-19 Toshiba Corp 電子線照射装置と照射方法および電子線描画装置
JP4406311B2 (ja) 2004-03-31 2010-01-27 株式会社荏原製作所 エネルギー線照射装置およびそれを用いたパタン作成方法
JP4547997B2 (ja) 2004-06-04 2010-09-22 株式会社ニコン 真空容器、露光装置、及び検査装置
TWI287255B (en) * 2004-10-21 2007-09-21 Hoya Corp Apparatus and method for depositing fine particles, and manufacturing method of light-emitting element
JP3929459B2 (ja) 2004-11-11 2007-06-13 株式会社日立ハイテクノロジーズ 荷電粒子線露光装置
GB0425290D0 (en) * 2004-11-17 2004-12-15 Eastham Derek A Focussing masks
GB2435348B (en) 2004-11-17 2009-06-24 Ims Nanofabrication Ag Pattern lock system for particle-beam exposure apparatus
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
JP4732917B2 (ja) * 2006-02-15 2011-07-27 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡及び欠陥検出装置
US7521687B2 (en) 2006-03-30 2009-04-21 Tokyo Electron Limited Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate
JP4533344B2 (ja) 2006-05-19 2010-09-01 キヤノン株式会社 真空装置、露光装置、及びデバイス製造方法
EP1983548A1 (en) 2007-04-20 2008-10-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Emitter chamber, charged particle apparatus and method for operating same
JP5497980B2 (ja) * 2007-06-29 2014-05-21 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置、及び試料検査方法
WO2009026970A1 (en) * 2007-08-24 2009-03-05 Carl Zeiss Smt Ag Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
CN102017052B (zh) 2008-02-26 2013-09-04 迈普尔平版印刷Ip有限公司 投影透镜装置
TWI377593B (en) 2008-02-26 2012-11-21 Mapper Lithography Ip Bv A charged particle multi-beamlet system for exposing a target using a plurality of beamlets
US8502176B2 (en) 2008-05-23 2013-08-06 Mapper Lithography Ip B.V. Imaging system
WO2009147202A1 (en) 2008-06-04 2009-12-10 Mapper Lithography Ip B.V. Writing strategy
JP5250350B2 (ja) * 2008-09-12 2013-07-31 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
TWI479530B (zh) 2008-10-01 2015-04-01 Mapper Lithography Ip Bv 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法
US10054754B2 (en) * 2009-02-04 2018-08-21 Nikon Corporation Thermal regulation of vibration-sensitive objects with conduit circuit having liquid metal, pump, and heat exchanger
DE102009009221A1 (de) * 2009-02-17 2010-08-26 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Halbleiterlithographie mit einem Aktuatorsystem
US20110049393A1 (en) 2009-02-22 2011-03-03 Mapper Lithography Ip B.V. Lithography Machine and Substrate Handling Arrangement
US8366423B2 (en) 2009-02-22 2013-02-05 Mapper Lithography Ip B.V. Method and arrangement for realizing a vacuum in a vacuum chamber
CN102422380A (zh) 2009-02-22 2012-04-18 迈普尔平版印刷Ip有限公司 带电粒子微影设备及真空腔室中产生真空的方法
JP2010282799A (ja) 2009-06-03 2010-12-16 Canon Inc 荷電粒子線描画装置およびデバイス製造方法
JP5406293B2 (ja) * 2009-06-16 2014-02-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置
WO2011043657A2 (en) * 2009-10-09 2011-04-14 Mapper Lithography Ip B.V. High voltage shielding arrangement
GB201003566D0 (en) * 2010-03-03 2010-04-21 Ilika Technologies Ltd Mass spectrometry apparatus and methods
EP2595174B8 (en) * 2010-06-08 2019-01-16 Micromass UK Limited Mass spectrometer comprising two Time of Flight analysers for analysing both positive and negative ions
WO2012062934A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle beam modulator
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
TWI517196B (zh) 2010-11-13 2016-01-11 瑪波微影Ｉｐ公司 具有中間腔室的帶電粒子微影系統
JP5709535B2 (ja) * 2011-01-07 2015-04-30 キヤノン株式会社 電子ビーム描画装置、およびそれを用いた物品の製造方法
JP5822535B2 (ja) * 2011-05-16 2015-11-24 キヤノン株式会社 描画装置、および、物品の製造方法
JP2013008534A (ja) * 2011-06-23 2013-01-10 Canon Inc 荷電粒子線レンズ用電極
JP2013171925A (ja) * 2012-02-20 2013-09-02 Canon Inc 荷電粒子線装置、それを用いた物品の製造方法
WO2013171216A1 (en) 2012-05-14 2013-11-21 Mapper Lithography Ip B.V. Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method
JP2014116518A (ja) * 2012-12-11 2014-06-26 Canon Inc 描画装置及び物品の製造方法
CN107407595B (zh) 2015-04-03 2018-09-07 株式会社日立高新技术 光量检测装置、利用其的免疫分析装置及电荷粒子束装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002231606A (ja) 2001-01-31 2002-08-16 Advantest Corp 電子ビーム露光装置及び電子レンズ
JP2005020009A (ja) 2003-06-27 2005-01-20 Asml Netherlands Bv リソグラフィ投影装置およびデバイス製造方法
JP2006139958A (ja) 2004-11-10 2006-06-01 Toshiba Corp 荷電ビーム装置

Also Published As

Publication number Publication date
EP2852966A1 (en) 2015-04-01
TW201401331A (zh) 2014-01-01
NL2010797C2 (en) 2014-08-21
TW201401330A (zh) 2014-01-01
WO2013171214A1 (en) 2013-11-21
JP6219374B2 (ja) 2017-10-25
NL2013320A (en) 2014-11-24
CN104428866A (zh) 2015-03-18
NL2010797A (en) 2013-11-18
CN107359101A (zh) 2017-11-17
TWI604493B (zh) 2017-11-01
JP2015516690A (ja) 2015-06-11
KR20150010993A (ko) 2015-01-29
NL2013320C2 (en) 2015-06-15
WO2013171229A1 (en) 2013-11-21
US10037864B2 (en) 2018-07-31
CN104520968B (zh) 2017-07-07
JP2015517735A (ja) 2015-06-22
JP2018041964A (ja) 2018-03-15
CN104520968A (zh) 2015-04-15
NL2010802A (en) 2013-11-18
KR20150010994A (ko) 2015-01-29
NL2013321C2 (en) 2015-05-07
NL2013321A (en) 2014-11-06
US9653261B2 (en) 2017-05-16
KR101961914B1 (ko) 2019-03-25
JP6239596B2 (ja) 2017-11-29
JP6430606B2 (ja) 2018-11-28
CN107359101B (zh) 2019-07-12
NL2010802C2 (en) 2014-08-25
US20170250053A1 (en) 2017-08-31
US20150124229A1 (en) 2015-05-07

Similar Documents

Publication Publication Date Title
KR102023056B1 (ko) 하전 입자 리소그래피 시스템 및 빔 생성기
JP6049627B2 (ja) 中間チャンバを備えた荷電粒子リソグラフィシステム
TWI765884B (zh) 用以移除和/或避免帶電粒子束系統中的汙染的方法和系統
US12387903B2 (en) Aberration correction in charged particle system

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20141215

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20180514

Comment text: Request for Examination of Application

PA0302 Request for accelerated examination

Patent event date: 20180629

Patent event code: PA03022R01D

Comment text: Request for Accelerated Examination

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20180903

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20181219

N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20190905

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20190911

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20190916

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20220830

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20230830

Start annual number: 5

End annual number: 5