TWI604493B - 帶電粒子微影系統和射束產生器 - Google Patents
帶電粒子微影系統和射束產生器 Download PDFInfo
- Publication number
- TWI604493B TWI604493B TW102117163A TW102117163A TWI604493B TW I604493 B TWI604493 B TW I604493B TW 102117163 A TW102117163 A TW 102117163A TW 102117163 A TW102117163 A TW 102117163A TW I604493 B TWI604493 B TW I604493B
- Authority
- TW
- Taiwan
- Prior art keywords
- charged particle
- chamber
- lithography system
- vacuum chamber
- cooling
- Prior art date
Links
- 239000002245 particle Substances 0.000 title claims description 72
- 238000001459 lithography Methods 0.000 title claims description 57
- 238000001816 cooling Methods 0.000 claims description 43
- 239000012809 cooling fluid Substances 0.000 claims description 17
- 239000002826 coolant Substances 0.000 claims 2
- 230000004888 barrier function Effects 0.000 description 43
- 238000000313 electron-beam-induced deposition Methods 0.000 description 12
- 229930195733 hydrocarbon Natural products 0.000 description 12
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
- H01J2237/0262—Shields electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
- H01J2237/0264—Shields magnetic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/16—Vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/182—Obtaining or maintaining desired pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/188—Differential pressure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261646839P | 2012-05-14 | 2012-05-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201401331A TW201401331A (zh) | 2014-01-01 |
| TWI604493B true TWI604493B (zh) | 2017-11-01 |
Family
ID=48463976
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102117163A TWI604493B (zh) | 2012-05-14 | 2013-05-14 | 帶電粒子微影系統和射束產生器 |
| TW102117161A TW201401330A (zh) | 2012-05-14 | 2013-05-14 | 帶電粒子微影系統和射束產生器 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102117161A TW201401330A (zh) | 2012-05-14 | 2013-05-14 | 帶電粒子微影系統和射束產生器 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US9653261B2 (enExample) |
| EP (1) | EP2852966A1 (enExample) |
| JP (3) | JP6219374B2 (enExample) |
| KR (2) | KR101961914B1 (enExample) |
| CN (3) | CN107359101B (enExample) |
| NL (4) | NL2010797C2 (enExample) |
| TW (2) | TWI604493B (enExample) |
| WO (2) | WO2013171214A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9466453B2 (en) * | 2013-12-30 | 2016-10-11 | Mapper Lithography Ip B.V. | Cathode arrangement, electron gun, and lithography system comprising such electron gun |
| EP3155644A4 (en) * | 2014-06-13 | 2018-02-28 | Intel Corporation | Ebeam align on the fly |
| JP2017135218A (ja) * | 2016-01-26 | 2017-08-03 | 株式会社アドバンテスト | 荷電粒子ビームレンズ装置、荷電粒子ビームカラム、および荷電粒子ビーム露光装置 |
| JP2017139339A (ja) * | 2016-02-04 | 2017-08-10 | 株式会社アドバンテスト | 露光装置 |
| US9981293B2 (en) | 2016-04-21 | 2018-05-29 | Mapper Lithography Ip B.V. | Method and system for the removal and/or avoidance of contamination in charged particle beam systems |
| US10453645B2 (en) * | 2016-12-01 | 2019-10-22 | Applied Materials Israel Ltd. | Method for inspecting a specimen and charged particle multi-beam device |
| CA3050512A1 (en) * | 2017-01-18 | 2018-08-09 | Phoenix Llc | High power ion beam generator systems and methods |
| US10176967B2 (en) * | 2017-02-23 | 2019-01-08 | Hermes Microvision, Inc. | Load lock system for charged particle beam imaging |
| NL2021217B1 (en) * | 2018-06-29 | 2020-01-07 | Asml Netherlands Bv | Substrate exposure system and a frame therefore |
| DE102019005362A1 (de) * | 2019-07-31 | 2021-02-04 | Carl Zeiss Multisem Gmbh | Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem |
| JP2021039880A (ja) * | 2019-09-03 | 2021-03-11 | 株式会社日立ハイテク | 荷電粒子線装置 |
| JP2023540179A (ja) * | 2020-09-07 | 2023-09-22 | エーエスエムエル ネザーランズ ビー.ブイ. | 電磁シールドを備えた電子光学アセンブリ |
| CN118974871A (zh) * | 2022-04-12 | 2024-11-15 | 华为技术有限公司 | 一种可调整的多电极准直装置 |
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| US3157308A (en) | 1961-09-05 | 1964-11-17 | Clark Mfg Co J L | Canister type container and method of making the same |
| US3159408A (en) | 1961-10-05 | 1964-12-01 | Grace W R & Co | Chuck |
| US3924136A (en) * | 1975-02-18 | 1975-12-02 | Stanford Research Inst | Charged particle apodized pattern imaging and exposure system |
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| DE3231036A1 (de) * | 1982-08-20 | 1984-02-23 | Max Planck Gesellschaft | Kombinierte elektrostatische objektiv- und emissionslinse |
| US4524308A (en) | 1984-06-01 | 1985-06-18 | Sony Corporation | Circuits for accomplishing electron beam convergence in color cathode ray tubes |
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| JP3253429B2 (ja) | 1993-09-17 | 2002-02-04 | 富士通株式会社 | 電子ビーム装置 |
| EP0766405A1 (en) | 1995-09-29 | 1997-04-02 | STMicroelectronics S.r.l. | Successive approximation register without redundancy |
| JP3763446B2 (ja) | 1999-10-18 | 2006-04-05 | キヤノン株式会社 | 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法 |
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| WO2001075948A1 (en) * | 2000-04-04 | 2001-10-11 | Advantest Corporation | Multibeam exposure apparatus comprising multiaxis electron lens, multiaxis electron lens for focusing electron beams, and method for manufacturing semiconductor device |
| JP3728217B2 (ja) | 2000-04-27 | 2005-12-21 | キヤノン株式会社 | 荷電粒子線露光装置およびデバイス製造方法 |
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| JP2002217091A (ja) * | 2001-01-19 | 2002-08-02 | Nikon Corp | 荷電粒子線露光装置 |
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| JP2004063547A (ja) * | 2002-07-25 | 2004-02-26 | Nikon Corp | 真空雰囲気下露光装置 |
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| CN100524026C (zh) | 2002-10-25 | 2009-08-05 | 迈普尔平版印刷Ip有限公司 | 光刻系统 |
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| JP2004214480A (ja) | 2003-01-07 | 2004-07-29 | Nikon Corp | 露光装置 |
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| CN104428866A (zh) | 2015-03-18 |
| KR20150010993A (ko) | 2015-01-29 |
| US9653261B2 (en) | 2017-05-16 |
| US20150124229A1 (en) | 2015-05-07 |
| TW201401331A (zh) | 2014-01-01 |
| US10037864B2 (en) | 2018-07-31 |
| JP2018041964A (ja) | 2018-03-15 |
| KR102023056B1 (ko) | 2019-09-20 |
| KR20150010994A (ko) | 2015-01-29 |
| CN107359101B (zh) | 2019-07-12 |
| JP6430606B2 (ja) | 2018-11-28 |
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| WO2013171229A1 (en) | 2013-11-21 |
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| CN107359101A (zh) | 2017-11-17 |
| JP2015517735A (ja) | 2015-06-22 |
| JP6239596B2 (ja) | 2017-11-29 |
| KR101961914B1 (ko) | 2019-03-25 |
| NL2010802A (en) | 2013-11-18 |
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| NL2010797A (en) | 2013-11-18 |
| NL2013320A (en) | 2014-11-24 |
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| US20170250053A1 (en) | 2017-08-31 |
| CN104520968B (zh) | 2017-07-07 |
| NL2010797C2 (en) | 2014-08-21 |
| EP2852966A1 (en) | 2015-04-01 |
| CN104520968A (zh) | 2015-04-15 |
| JP6219374B2 (ja) | 2017-10-25 |
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