NL2010797C2 - Charged particle lithography system and beam generator. - Google Patents

Charged particle lithography system and beam generator. Download PDF

Info

Publication number
NL2010797C2
NL2010797C2 NL2010797A NL2010797A NL2010797C2 NL 2010797 C2 NL2010797 C2 NL 2010797C2 NL 2010797 A NL2010797 A NL 2010797A NL 2010797 A NL2010797 A NL 2010797A NL 2010797 C2 NL2010797 C2 NL 2010797C2
Authority
NL
Netherlands
Prior art keywords
generator
cavity
chamber
pumps
shielding device
Prior art date
Application number
NL2010797A
Other languages
English (en)
Dutch (nl)
Other versions
NL2010797A (en
Inventor
Alexander Hendrik Vincent Veen
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Publication of NL2010797A publication Critical patent/NL2010797A/en
Application granted granted Critical
Publication of NL2010797C2 publication Critical patent/NL2010797C2/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3007Electron or ion-optical systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302Controlling tubes by external information, e.g. programme control
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177Multi-beam, e.g. fly's eye, comb probe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002Cooling arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/026Shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/026Shields
    • H01J2237/0262Shields electrostatic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/026Shields
    • H01J2237/0264Shields magnetic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16Vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18Vacuum control means
    • H01J2237/182Obtaining or maintaining desired pressure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18Vacuum control means
    • H01J2237/188Differential pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Sources, Ion Sources (AREA)
NL2010797A 2012-05-14 2013-05-14 Charged particle lithography system and beam generator. NL2010797C2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261646839P 2012-05-14 2012-05-14
US201261646839 2012-05-14

Publications (2)

Publication Number Publication Date
NL2010797A NL2010797A (en) 2013-11-18
NL2010797C2 true NL2010797C2 (en) 2014-08-21

Family

ID=48463976

Family Applications (4)

Application Number Title Priority Date Filing Date
NL2010802A NL2010802C2 (en) 2012-05-14 2013-05-14 Charged particle lithography system and beam generator.
NL2010797A NL2010797C2 (en) 2012-05-14 2013-05-14 Charged particle lithography system and beam generator.
NL2013320A NL2013320C2 (en) 2012-05-14 2014-08-12 Charged particle lithography system and beam generator.
NL2013321A NL2013321C2 (en) 2012-05-14 2014-08-12 Charged particle lithography system and beam generator.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL2010802A NL2010802C2 (en) 2012-05-14 2013-05-14 Charged particle lithography system and beam generator.

Family Applications After (2)

Application Number Title Priority Date Filing Date
NL2013320A NL2013320C2 (en) 2012-05-14 2014-08-12 Charged particle lithography system and beam generator.
NL2013321A NL2013321C2 (en) 2012-05-14 2014-08-12 Charged particle lithography system and beam generator.

Country Status (8)

Country Link
US (2) US9653261B2 (enExample)
EP (1) EP2852966A1 (enExample)
JP (3) JP6219374B2 (enExample)
KR (2) KR101961914B1 (enExample)
CN (3) CN104520968B (enExample)
NL (4) NL2010802C2 (enExample)
TW (2) TWI604493B (enExample)
WO (2) WO2013171214A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102427119B1 (ko) * 2013-12-30 2022-07-29 에이에스엠엘 네델란즈 비.브이. 캐소드 어레인지먼트, 전자총, 및 그런 전자총을 포함하는 리소그래피 시스템
JP6779788B2 (ja) * 2014-06-13 2020-11-04 インテル・コーポレーション リアルタイムアラインメント方法、カラム、コンピュータプログラム及びコンピュータ可読記憶媒体
JP2017135218A (ja) * 2016-01-26 2017-08-03 株式会社アドバンテスト 荷電粒子ビームレンズ装置、荷電粒子ビームカラム、および荷電粒子ビーム露光装置
JP2017139339A (ja) * 2016-02-04 2017-08-10 株式会社アドバンテスト 露光装置
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
US10453645B2 (en) * 2016-12-01 2019-10-22 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle multi-beam device
CA3229060A1 (en) * 2017-01-18 2018-08-09 Shine Technologies, Llc High power ion beam generator systems and methods
US10176967B2 (en) * 2017-02-23 2019-01-08 Hermes Microvision, Inc. Load lock system for charged particle beam imaging
NL2021217B1 (en) * 2018-06-29 2020-01-07 Asml Netherlands Bv Substrate exposure system and a frame therefore
DE102019005362A1 (de) 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
JP2021039880A (ja) * 2019-09-03 2021-03-11 株式会社日立ハイテク 荷電粒子線装置
JP2023540179A (ja) * 2020-09-07 2023-09-22 エーエスエムエル ネザーランズ ビー.ブイ. 電磁シールドを備えた電子光学アセンブリ
CN118974871A (zh) * 2022-04-12 2024-11-15 华为技术有限公司 一种可调整的多电极准直装置

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US3924136A (en) * 1975-02-18 1975-12-02 Stanford Research Inst Charged particle apodized pattern imaging and exposure system
US4142133A (en) * 1976-10-20 1979-02-27 Balandin Genrikh D Cathode-ray tube with variable energy of beam electrons
DE3231036A1 (de) * 1982-08-20 1984-02-23 Max Planck Gesellschaft Kombinierte elektrostatische objektiv- und emissionslinse
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
WO1994025880A1 (en) 1993-04-30 1994-11-10 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
JP3253429B2 (ja) 1993-09-17 2002-02-04 富士通株式会社 電子ビーム装置
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
JP3763446B2 (ja) * 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
EP2426693A3 (en) * 1999-12-13 2013-01-16 Semequip, Inc. Ion source
WO2001075948A1 (en) 2000-04-04 2001-10-11 Advantest Corporation Multibeam exposure apparatus comprising multiaxis electron lens, multiaxis electron lens for focusing electron beams, and method for manufacturing semiconductor device
JP3728217B2 (ja) * 2000-04-27 2005-12-21 キヤノン株式会社 荷電粒子線露光装置およびデバイス製造方法
GB0029040D0 (en) * 2000-11-29 2001-01-10 Micromass Ltd Orthogonal time of flight mass spectrometer
JP2002217091A (ja) 2001-01-19 2002-08-02 Nikon Corp 荷電粒子線露光装置
JP4156809B2 (ja) * 2001-01-31 2008-09-24 株式会社アドバンテスト 電子ビーム露光装置及び電子レンズ
US6797953B2 (en) 2001-02-23 2004-09-28 Fei Company Electron beam system using multiple electron beams
US6768125B2 (en) 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
CN100359626C (zh) * 2002-06-15 2008-01-02 Nfab有限公司 粒子束发生器
JP2004063547A (ja) * 2002-07-25 2004-02-26 Nikon Corp 真空雰囲気下露光装置
EP1388883B1 (en) * 2002-08-07 2013-06-05 Fei Company Coaxial FIB-SEM column
EP2302460A3 (en) 2002-10-25 2011-04-06 Mapper Lithography Ip B.V. Lithography system
KR101077098B1 (ko) 2002-10-30 2011-10-26 마퍼 리쏘그라피 아이피 비.브이. 전자 빔 노출 시스템
JP2004214480A (ja) 2003-01-07 2004-07-29 Nikon Corp 露光装置
CN1759465B (zh) 2003-03-10 2010-06-16 迈普尔平版印刷Ip有限公司 用于产生多个小波束的装置
JP4113032B2 (ja) * 2003-04-21 2008-07-02 キヤノン株式会社 電子銃及び電子ビーム露光装置
EP1830384B1 (en) 2003-05-28 2011-09-14 Mapper Lithography Ip B.V. Charged particle beamlet exposure system
EP1491955A1 (en) * 2003-06-27 2004-12-29 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
EP1498930A1 (en) * 2003-07-14 2005-01-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with multi-source array
DE602004010824T2 (de) 2003-07-30 2008-12-24 Mapper Lithography Ip B.V. Modulator-schaltkreise
GB2406704B (en) 2003-09-30 2007-02-07 Ims Nanofabrication Gmbh Particle-optic electrostatic lens
JP2005127800A (ja) 2003-10-22 2005-05-19 Toshiba Corp 電子線照射装置と照射方法および電子線描画装置
JP4406311B2 (ja) * 2004-03-31 2010-01-27 株式会社荏原製作所 エネルギー線照射装置およびそれを用いたパタン作成方法
JP4547997B2 (ja) 2004-06-04 2010-09-22 株式会社ニコン 真空容器、露光装置、及び検査装置
KR100912627B1 (ko) * 2004-10-21 2009-08-17 호야 가부시키가이샤 미립자 퇴적장치 및 미립자 퇴적방법
JP2006139958A (ja) * 2004-11-10 2006-06-01 Toshiba Corp 荷電ビーム装置
JP3929459B2 (ja) * 2004-11-11 2007-06-13 株式会社日立ハイテクノロジーズ 荷電粒子線露光装置
WO2006053358A1 (en) * 2004-11-17 2006-05-26 Ims Nanofabrication Ag Pattern lock system for particle-beam exposure apparatus
GB0425290D0 (en) * 2004-11-17 2004-12-15 Eastham Derek A Focussing masks
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
JP4732917B2 (ja) * 2006-02-15 2011-07-27 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡及び欠陥検出装置
US7550739B2 (en) 2006-03-30 2009-06-23 Tokyo Electron Limited Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate
JP4533344B2 (ja) 2006-05-19 2010-09-01 キヤノン株式会社 真空装置、露光装置、及びデバイス製造方法
EP1983548A1 (en) 2007-04-20 2008-10-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Emitter chamber, charged particle apparatus and method for operating same
JP5497980B2 (ja) * 2007-06-29 2014-05-21 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置、及び試料検査方法
EP2181357A1 (en) * 2007-08-24 2010-05-05 Carl Zeiss SMT AG Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography
EP2250660A1 (en) 2008-02-26 2010-11-17 Mapper Lithography IP B.V. Projection lens arrangement
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
CN102017053B (zh) 2008-02-26 2014-04-02 迈普尔平版印刷Ip有限公司 投影透镜装置
US8502176B2 (en) 2008-05-23 2013-08-06 Mapper Lithography Ip B.V. Imaging system
CN102113083B (zh) 2008-06-04 2016-04-06 迈普尔平版印刷Ip有限公司 对目标进行曝光的方法和系统
JP5250350B2 (ja) * 2008-09-12 2013-07-31 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
JP5420670B2 (ja) 2008-10-01 2014-02-19 マッパー・リソグラフィー・アイピー・ビー.ブイ. 静電レンズ構造体
US10054754B2 (en) * 2009-02-04 2018-08-21 Nikon Corporation Thermal regulation of vibration-sensitive objects with conduit circuit having liquid metal, pump, and heat exchanger
DE102009009221A1 (de) * 2009-02-17 2010-08-26 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Halbleiterlithographie mit einem Aktuatorsystem
WO2010094719A1 (en) 2009-02-22 2010-08-26 Mapper Lithography Ip B.V. Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber
JP5653941B2 (ja) 2009-02-22 2015-01-14 マッパー・リソグラフィー・アイピー・ビー.ブイ. 真空チャンバー内の真空を実現する方法および設備
CN102414776A (zh) 2009-02-22 2012-04-11 迈普尔平版印刷Ip有限公司 微影机及基板处理的配置
JP2010282799A (ja) * 2009-06-03 2010-12-16 Canon Inc 荷電粒子線描画装置およびデバイス製造方法
JP5406293B2 (ja) * 2009-06-16 2014-02-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置
CN102687231A (zh) 2009-10-09 2012-09-19 迈普尔平版印刷Ip有限公司 高压屏蔽装置
GB201003566D0 (en) * 2010-03-03 2010-04-21 Ilika Technologies Ltd Mass spectrometry apparatus and methods
CA2802135A1 (en) * 2010-06-08 2011-12-15 Micromass Uk Limited Mass spectrometer with beam expander
WO2012062934A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle beam modulator
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
JP6049627B2 (ja) 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー.ブイ. 中間チャンバを備えた荷電粒子リソグラフィシステム
JP5709535B2 (ja) * 2011-01-07 2015-04-30 キヤノン株式会社 電子ビーム描画装置、およびそれを用いた物品の製造方法
JP5822535B2 (ja) * 2011-05-16 2015-11-24 キヤノン株式会社 描画装置、および、物品の製造方法
JP2013008534A (ja) * 2011-06-23 2013-01-10 Canon Inc 荷電粒子線レンズ用電極
JP2013171925A (ja) * 2012-02-20 2013-09-02 Canon Inc 荷電粒子線装置、それを用いた物品の製造方法
NL2010799C2 (en) 2012-05-14 2014-02-03 Mapper Lithography Ip Bv Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method.
JP2014116518A (ja) * 2012-12-11 2014-06-26 Canon Inc 描画装置及び物品の製造方法
EP3279624B1 (en) 2015-04-03 2019-08-28 Hitachi High-Technologies Corporation Light quantity detection device, and immunoanalysis device and charged particle beam device using same

Also Published As

Publication number Publication date
CN104520968A (zh) 2015-04-15
TW201401331A (zh) 2014-01-01
US20150124229A1 (en) 2015-05-07
JP6430606B2 (ja) 2018-11-28
KR101961914B1 (ko) 2019-03-25
KR20150010994A (ko) 2015-01-29
JP2015517735A (ja) 2015-06-22
NL2010802A (en) 2013-11-18
WO2013171229A1 (en) 2013-11-21
CN104428866A (zh) 2015-03-18
NL2013320A (en) 2014-11-24
KR20150010993A (ko) 2015-01-29
NL2013321C2 (en) 2015-05-07
CN107359101A (zh) 2017-11-17
JP6239596B2 (ja) 2017-11-29
EP2852966A1 (en) 2015-04-01
CN104520968B (zh) 2017-07-07
JP2018041964A (ja) 2018-03-15
JP6219374B2 (ja) 2017-10-25
CN107359101B (zh) 2019-07-12
NL2010802C2 (en) 2014-08-25
US20170250053A1 (en) 2017-08-31
TW201401330A (zh) 2014-01-01
KR102023056B1 (ko) 2019-09-20
NL2010797A (en) 2013-11-18
JP2015516690A (ja) 2015-06-11
NL2013321A (en) 2014-11-06
NL2013320C2 (en) 2015-06-15
US10037864B2 (en) 2018-07-31
WO2013171214A1 (en) 2013-11-21
US9653261B2 (en) 2017-05-16
TWI604493B (zh) 2017-11-01

Similar Documents

Publication Publication Date Title
NL2010797C2 (en) Charged particle lithography system and beam generator.
US8586949B2 (en) Charged particle lithography system with intermediate chamber
US12387903B2 (en) Aberration correction in charged particle system
JP2012238623A (ja) 荷電粒子線描画装置およびデバイスの製造方法
TW202328812A (zh) 帶電粒子裝置及方法
US9123507B2 (en) Arrangement and method for transporting radicals

Legal Events

Date Code Title Description
RC Pledge established

Free format text: DETAILS LICENCE OR PLEDGE: RIGHT OF PLEDGE, ESTABLISHED

Name of requester: DE STAAT DER NEDERLANDEN / RIJKSDIENST VOOR ONDERN

Effective date: 20180621

PD Change of ownership

Owner name: ASML NETHERLANDS B.V.; NL

Free format text: DETAILS ASSIGNMENT: CHANGE OF OWNER(S), ASSIGNMENT; FORMER OWNER NAME: MAPPER LITHOGRAPHY IP B.V.

Effective date: 20190425