CN104520968B - 带电粒子光刻系统和射束产生器 - Google Patents

带电粒子光刻系统和射束产生器 Download PDF

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Publication number
CN104520968B
CN104520968B CN201380036065.5A CN201380036065A CN104520968B CN 104520968 B CN104520968 B CN 104520968B CN 201380036065 A CN201380036065 A CN 201380036065A CN 104520968 B CN104520968 B CN 104520968B
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China
Prior art keywords
charged particle
chamber
cooling
generator
electrode
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Chinese (zh)
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CN104520968A (zh
Inventor
A.H.V.范维恩
W.H.厄尔巴努斯
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ASML Netherlands BV
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Mapper Lithopraphy IP BV
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0262—Shields electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0264—Shields magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/182—Obtaining or maintaining desired pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/188—Differential pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Sources, Ion Sources (AREA)
CN201380036065.5A 2012-05-14 2013-05-14 带电粒子光刻系统和射束产生器 Active CN104520968B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710450157.8A CN107359101B (zh) 2012-05-14 2013-05-14 带电粒子射束产生器中的高电压屏蔽和冷却

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646839P 2012-05-14 2012-05-14
US61/646,839 2012-05-14
PCT/EP2013/059963 WO2013171229A1 (en) 2012-05-14 2013-05-14 Charged particle lithography system and beam generator

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201710450157.8A Division CN107359101B (zh) 2012-05-14 2013-05-14 带电粒子射束产生器中的高电压屏蔽和冷却

Publications (2)

Publication Number Publication Date
CN104520968A CN104520968A (zh) 2015-04-15
CN104520968B true CN104520968B (zh) 2017-07-07

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Application Number Title Priority Date Filing Date
CN201380036065.5A Active CN104520968B (zh) 2012-05-14 2013-05-14 带电粒子光刻系统和射束产生器
CN201710450157.8A Active CN107359101B (zh) 2012-05-14 2013-05-14 带电粒子射束产生器中的高电压屏蔽和冷却
CN201380036057.0A Pending CN104428866A (zh) 2012-05-14 2013-05-14 带电粒子光刻系统和射束产生器

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CN201380036057.0A Pending CN104428866A (zh) 2012-05-14 2013-05-14 带电粒子光刻系统和射束产生器

Country Status (8)

Country Link
US (2) US9653261B2 (enExample)
EP (1) EP2852966A1 (enExample)
JP (3) JP6239596B2 (enExample)
KR (2) KR102023056B1 (enExample)
CN (3) CN104520968B (enExample)
NL (4) NL2010802C2 (enExample)
TW (2) TW201401330A (enExample)
WO (2) WO2013171229A1 (enExample)

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JP2017135218A (ja) * 2016-01-26 2017-08-03 株式会社アドバンテスト 荷電粒子ビームレンズ装置、荷電粒子ビームカラム、および荷電粒子ビーム露光装置
JP2017139339A (ja) * 2016-02-04 2017-08-10 株式会社アドバンテスト 露光装置
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
US10453645B2 (en) * 2016-12-01 2019-10-22 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle multi-beam device
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DE102019005362A1 (de) * 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
JP2021039880A (ja) 2019-09-03 2021-03-11 株式会社日立ハイテク 荷電粒子線装置
KR20230065267A (ko) * 2020-09-07 2023-05-11 에이에스엠엘 네델란즈 비.브이. 전자기 차폐부를 포함하는 전자-광학 조립체
WO2023197131A1 (zh) * 2022-04-12 2023-10-19 华为技术有限公司 一种可调整的多电极准直装置

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EP1498930A1 (en) * 2003-07-14 2005-01-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with multi-source array
US20090146082A1 (en) * 2004-11-17 2009-06-11 Ims Nanofabrication Ag Pattern Lock System for Particle-Beam Exposure Apparatus

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TWI604493B (zh) 2017-11-01
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JP6219374B2 (ja) 2017-10-25
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NL2010802A (en) 2013-11-18
KR101961914B1 (ko) 2019-03-25
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US10037864B2 (en) 2018-07-31

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