JP2015133381A - 半導体装置の製造方法、半導体装置、半導体装置の製造システム - Google Patents
半導体装置の製造方法、半導体装置、半導体装置の製造システム Download PDFInfo
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Abstract
【解決手段】基板に、下部光閉じ込め層と光吸収層と上部光閉じ込め層を形成し、これらの一部を除去することで、光変調器部を形成する第1工程と、該基板の該光変調器部が形成されていない部分に、回折格子を有するレーザ部を形成する第2工程と、該上部光閉じ込め層の上にドーパントの拡散を抑制する拡散抑制層を形成する工程と、該レーザ部と該拡散抑制層の上にコンタクト層を形成する第3工程と、を備える。そして、該コンタクト層のドーパントの種類と、該上部光閉じ込め層のドーパントの種類を一致させたことを特徴とする。
【選択図】図1
Description
図1は、本発明の実施の形態1に係る半導体装置10の断面図である。半導体装置10は、例えばn型InPで形成された基板12を備えている。基板12の上にはレーザ部14が形成されている。レーザ部14について説明する。レーザ部14は、基板12の上に形成されたn型クラッド層16を備えている。n型クラッド層16の上には例えばInGaAsPを材料とするMQW(Multi Quantum Well)で活性層18が形成されている。活性層18の上にはp型クラッド層20が形成されている。p型クラッド層20には回折格子22が形成されている。p型クラッド層20の上にはp型埋め込み層24が形成されている。
実施の形態2については実施の形態1との相違点を中心に説明する。実施の形態2は、1枚のウエハに複数の半導体装置を製造する半導体装置の製造方法と半導体装置の製造システムに関する。図4は、本発明の実施の形態2に係る半導体装置の製造システム100を示す図である。半導体装置の製造システム100(以後、単にシステム100という)はPL評価装置102を備えている。PL評価装置102には演算部120が接続されている。演算部120には電子線描画装置130が接続されている。電子線描画装置130は、複数の光変調器部のそれぞれと接して設けられるレーザ部の回折格子を形成する装置である。
Claims (4)
- 基板に、下部光閉じ込め層、前記下部光閉じ込め層の上の光吸収層、及び前記光吸収層の上の上部光閉じ込め層を形成し、前記下部光閉じ込め層、前記光吸収層、及び前記上部光閉じ込め層の一部を除去することで、光変調器部を形成する第1工程と、
前記基板の前記光変調器部が形成されていない部分に、回折格子を有するレーザ部を形成する第2工程と、
前記上部光閉じ込め層の上にドーパントの拡散を抑制する拡散抑制層を形成する工程と、
前記レーザ部と前記拡散抑制層の上にコンタクト層を形成する第3工程と、を備え、
前記コンタクト層のドーパントの種類と、前記上部光閉じ込め層のドーパントの種類を一致させたことを特徴とする半導体装置の製造方法。 - ウエハに、下部光閉じ込め層、前記下部光閉じ込め層の上の光吸収層、及び前記光吸収層の上の上部光閉じ込め層を形成し、前記下部光閉じ込め層、前記光吸収層、及び前記上部光閉じ込め層の一部を除去することで、複数の光変調器部を形成する第1工程と、
前記複数の光変調器部の個々の光変調器部のフォトルミネッセンス波長を評価する評価工程と、
前記ウエハに、前記複数の光変調器部のそれぞれに回折格子を有するレーザ部が接続するように、複数のレーザ部を形成する第2工程と、
前記複数の光変調器部と前記複数のレーザ部の上に、コンタクト層を形成する第3工程と、を備え、
前記第2工程では、前記評価工程で得られたフォトルミネッセンス波長と前記レーザ部の発振波長の差分値が予め定められた値になるように、前記複数のレーザ部の個々の前記回折格子を形成することを特徴とする半導体装置の製造方法。 - 基板と、
前記基板の上に形成された下部光閉じ込め層、前記下部光閉じ込め層の上に形成された光吸収層、及び前記光吸収層の上に形成された上部光閉じ込め層を有する光変調器部と、
前記上部光閉じ込め層の上に形成された、ドーパントの拡散を抑制する拡散抑制層と、
前記基板の上に前記光変調器部と接するように形成されたレーザ部と、
前記レーザ部と前記拡散抑制層の上に形成されたコンタクト層と、を備え、
前記光吸収層は全体が均一な組成であり、
前記コンタクト層のドーパントと前記上部光閉じ込め層のドーパントの種類を一致させたことを特徴とする半導体装置。 - ウエハに形成された複数の光変調器部の個々の光変調器部のフォトルミネッセンス波長を評価するPL評価装置と、
前記複数の光変調器部のそれぞれと接して設けられるレーザ部の回折格子を形成する電子線描画装置と、
前記PL評価装置から前記フォトルミネッセンス波長の情報を受け取り、前記フォトルミネッセンス波長と前記レーザ部の発振波長の差分値が予め定められた値となるための前記回折格子の密度を演算し、その結果を前記電子線描画装置へ送る演算部と、を備えたことを特徴とする半導体装置の製造システム。
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JP2014003379A JP6291849B2 (ja) | 2014-01-10 | 2014-01-10 | 半導体装置の製造方法、半導体装置 |
TW103131849A TWI528671B (zh) | 2014-01-10 | 2014-09-16 | 半導體裝置之製造方法、半導體裝置以及半導體裝置之製造系統 |
US14/497,393 US9397474B2 (en) | 2014-01-10 | 2014-09-26 | Method for manufacturing semiconductor device and semiconductor device |
KR1020150000025A KR101672692B1 (ko) | 2014-01-10 | 2015-01-02 | 반도체장치의 제조방법, 반도체장치, 및 반도체장치의 제조 시스템 |
CN201510011808.4A CN104779519B (zh) | 2014-01-10 | 2015-01-09 | 半导体装置的制造方法、半导体装置及其制造系统 |
US15/185,166 US9793093B2 (en) | 2014-01-10 | 2016-06-17 | System for manufacturing semiconductor device |
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JP2019054107A (ja) * | 2017-09-14 | 2019-04-04 | 日本電信電話株式会社 | 半導体光素子 |
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JP6468180B2 (ja) * | 2015-12-24 | 2019-02-13 | 三菱電機株式会社 | 光半導体装置の製造方法 |
KR102494859B1 (ko) | 2016-05-26 | 2023-02-02 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조방법 |
JP6388007B2 (ja) * | 2016-08-08 | 2018-09-12 | 三菱電機株式会社 | 光デバイスの製造方法 |
JP6414306B2 (ja) * | 2017-09-27 | 2018-10-31 | 三菱電機株式会社 | 半導体装置の製造方法、半導体装置 |
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JP2019054107A (ja) * | 2017-09-14 | 2019-04-04 | 日本電信電話株式会社 | 半導体光素子 |
JP6996183B2 (ja) | 2017-09-14 | 2022-01-17 | 日本電信電話株式会社 | 半導体光素子 |
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US20160300691A1 (en) | 2016-10-13 |
US9793093B2 (en) | 2017-10-17 |
US9397474B2 (en) | 2016-07-19 |
TW201528631A (zh) | 2015-07-16 |
KR20150083783A (ko) | 2015-07-20 |
CN104779519A (zh) | 2015-07-15 |
JP6291849B2 (ja) | 2018-03-14 |
TWI528671B (zh) | 2016-04-01 |
US20150200520A1 (en) | 2015-07-16 |
KR101672692B1 (ko) | 2016-11-04 |
CN104779519B (zh) | 2018-02-16 |
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