JP2015095559A - 絶縁ゲートバイポーラトランジスタおよびその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000005468 ion implantation Methods 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 239000001307 helium Substances 0.000 claims abstract description 34
- 229910052734 helium Inorganic materials 0.000 claims abstract description 34
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000001257 hydrogen Substances 0.000 claims abstract description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims description 268
- 238000000137 annealing Methods 0.000 claims description 44
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 12
- 239000002344 surface layer Substances 0.000 claims description 12
- 230000000149 penetrating effect Effects 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract description 2
- 230000007547 defect Effects 0.000 description 17
- 238000002513 implantation Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 150000002431 hydrogen Chemical class 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101001061788 Homo sapiens Ras-related protein Rab-35 Proteins 0.000 description 1
- 102100029568 Ras-related protein Rab-35 Human genes 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 150000002371 helium Chemical class 0.000 description 1
- -1 helium ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
Description
1S 半導体基板
1 ドリフト層
2 P導電型層(チャネル形成層)
3 N導電型領域(エミッタ領域)
4 コレクタ層
5 ライフタイム制御層(LT制御層)
LUB LT制御層表面側境界
LLB LT制御層裏面側境界
6 フィールドストップ層(FS層)
FUB FS層表面側境界
K 変数(LT制御層の半値幅領域とFS層の半値幅領域の重なり度を示す尺度)
Claims (10)
- N導電型の半導体基板(1S)からなるドリフト層(1)と、前記半導体基板の裏面側の表層部に形成されたP導電型のコレクタ層(4)と、前記ドリフト層と前記コレクタ層の間に形成されたN導電型で前記ドリフト層より不純物濃度が高いフィールドストップ層(以下、FS層と略記)(6)とを有してなる絶縁ゲートバイポーラトランジスタであって、
前記半導体基板の厚さ方向において、
ライフタイム制御層(以下、LT制御層と略記)(5)が、ヘリウム(He)のイオン注入により、所定の半値幅で形成されてなり、
前記FS層が、水素(H)のイオン注入により、所定の半値幅で形成されてなり、
前記LT制御層の半値幅領域と前記FS層の半値幅領域とが、重なるように構成されてなることを特徴とする絶縁ゲートバイポーラトランジスタ。 - 前記LT制御層の半値幅領域が、前記FS層の半値幅領域に含まれるように構成されてなることを特徴とする請求項1に記載の絶縁ゲートバイポーラトランジスタ。
- 前記FS層の半値幅領域を規定するFS層表面側境界(FUB)が、前記LT制御層の半値幅領域を規定するLT制御層表面側境界(LTU)に対して、LT制御層の半値幅の1/2以上表面側に位置するように構成されてなることを特徴とする請求項2に記載の絶縁ゲートバイポーラトランジスタ。
- 前記LT制御層の半値幅が、5μmであることを特徴とする請求項3に記載の絶縁ゲートバイポーラトランジスタ。
- 前記半導体基板の厚さが、50μm以上、180μm以下であることを特徴とする請求項1乃至4のいずれか一項に記載の絶縁ゲートバイポーラトランジスタ。
- 前記絶縁ゲートバイポーラトランジスタが、
前記半導体基板の表面側の表層部に形成されたP導電型層を貫通する絶縁トレンチゲート(G)を有した、トレンチゲート型であることを特徴とする請求項1乃至5のいずれか一項に記載の絶縁ゲートバイポーラトランジスタ。 - 前記絶縁ゲートバイポーラトランジスタが、
車載用のモータを駆動するインバータ回路に用いられることを特徴とする請求項1乃至6のいずれか一項に記載の絶縁ゲートバイポーラトランジスタ。 - 請求項1乃至7のいずれか一項に記載の絶縁ゲートバイポーラトランジスタの製造方法であって、
前記半導体基板の裏面側の表層部に、前記コレクタ層を形成するコレクタ層形成工程(S3)と、
前記コレクタ層形成工程の後、前記半導体基板の裏面側からヘリウムをイオン注入して、前記LT制御層を形成する第1イオン注入工程(S4)と、
前記第1イオン注入工程の後、前記半導体基板をアニールする第1アニール工程(S5)と、
前記第1アニール工程の後、前記半導体基板の裏面側から水素をイオン注入して、前記FS層を形成する第2イオン注入工程(S6)と、
前記第2イオン注入工程の後、前記半導体基板をアニールする第2アニール工程(S7)と、を有してなることを特徴とする絶縁ゲートバイポーラトランジスタの製造方法。 - 前記第1アニール工程および前記第2アニール工程におけるアニール温度が、300℃以上、425℃以下であることを特徴とする請求項8に記載の絶縁ゲートバイポーラトランジスタの製造方法。
- 前記アニール温度が、360℃以上、400℃以下であることを特徴とする請求項9に記載の絶縁ゲートバイポーラトランジスタの製造方法。
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JP2013234260A JP6225649B2 (ja) | 2013-11-12 | 2013-11-12 | 絶縁ゲートバイポーラトランジスタおよびその製造方法 |
US15/034,944 US9704980B2 (en) | 2013-11-12 | 2014-10-06 | Insulated gate bipolar transistor and method for manufacturing same |
PCT/JP2014/005076 WO2015072064A1 (ja) | 2013-11-12 | 2014-10-06 | 絶縁ゲートバイポーラトランジスタおよびその製造方法 |
CN201480061962.6A CN105723513B (zh) | 2013-11-12 | 2014-10-06 | 绝缘栅双极型晶体管及其制造方法 |
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JPWO2018207394A1 (ja) * | 2017-05-10 | 2019-11-07 | 三菱電機株式会社 | 半導体装置 |
WO2020100995A1 (ja) * | 2018-11-16 | 2020-05-22 | 富士電機株式会社 | 半導体装置および製造方法 |
US11373869B2 (en) | 2018-11-16 | 2022-06-28 | Fuji Electric Co., Ltd. | Semiconductor device and fabrication method |
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JP6332446B2 (ja) * | 2014-06-12 | 2018-05-30 | 富士電機株式会社 | 半導体装置 |
JP6846119B2 (ja) * | 2016-05-02 | 2021-03-24 | 株式会社 日立パワーデバイス | ダイオード、およびそれを用いた電力変換装置 |
DE112019000094T5 (de) * | 2018-03-19 | 2020-09-24 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung |
CN113711364A (zh) | 2019-10-11 | 2021-11-26 | 富士电机株式会社 | 半导体装置和半导体装置的制造方法 |
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JPWO2018207394A1 (ja) * | 2017-05-10 | 2019-11-07 | 三菱電機株式会社 | 半導体装置 |
WO2020100995A1 (ja) * | 2018-11-16 | 2020-05-22 | 富士電機株式会社 | 半導体装置および製造方法 |
JPWO2020100995A1 (ja) * | 2018-11-16 | 2021-05-20 | 富士電機株式会社 | 半導体装置および製造方法 |
US11373869B2 (en) | 2018-11-16 | 2022-06-28 | Fuji Electric Co., Ltd. | Semiconductor device and fabrication method |
JP7099541B2 (ja) | 2018-11-16 | 2022-07-12 | 富士電機株式会社 | 半導体装置および製造方法 |
US11715771B2 (en) | 2018-11-16 | 2023-08-01 | Fuji Electric Co., Ltd. | Semiconductor device and manufacturing method |
US11854782B2 (en) | 2018-11-16 | 2023-12-26 | Fuji Electric Co., Ltd. | Semiconductor device and fabrication method |
Also Published As
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US20160276470A1 (en) | 2016-09-22 |
CN105723513A (zh) | 2016-06-29 |
CN105723513B (zh) | 2018-10-23 |
JP6225649B2 (ja) | 2017-11-08 |
WO2015072064A1 (ja) | 2015-05-21 |
US9704980B2 (en) | 2017-07-11 |
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