JP2020077720A - 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置および炭化珪素半導体装置の製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 146
- 239000004065 semiconductor Substances 0.000 title claims abstract description 145
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 144
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000012535 impurity Substances 0.000 claims abstract description 62
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 48
- 229910052757 nitrogen Inorganic materials 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 5
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical group [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 163
- 239000000758 substrate Substances 0.000 abstract description 69
- 239000002344 surface layer Substances 0.000 abstract description 11
- 230000006866 deterioration Effects 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 238000003475 lamination Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000003763 carbonization Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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Abstract
Description
本発明にかかる炭化珪素半導体装置として、炭化珪素PiNダイオードを例に説明する。図1は、実施の形態にかかる炭化珪素半導体装置の構造を示す断面図である。
実施の形態にかかる炭化珪素半導体装置の製造方法について、半導体材料として炭化珪素を用い、PiNダイオードを作製(製造)する場合を例に説明する。図3〜5は、実施の形態にかかる炭化珪素半導体装置の製造途中の状態を示す断面図である。
2 n型炭化珪素層
3 p型炭化珪素層
4 短ライフタイム層
5 アノード電極
6 カソード電極
7 基板表面層
8 高窒素密度層
9 コドープ層
11 ホール
12 積層欠陥
21 n+型炭化珪素基板
22 n-型ドリフト層
23 第1p+型領域
24 第2p+型領域
25 n型領域
26 p型ベース層
27 n+型ソース領域
28 p+型コンタクト領域
29 ゲート絶縁膜
30 ゲート電極
31 層間絶縁膜
32 ソース電極
38 トレンチ
Claims (7)
- 第1導電型の第1半導体層と、
前記第1半導体層上に設けられた、前記第1半導体層よりも不純物濃度の高い第1導電型の第2半導体層と、
前記第2半導体層の、前記第1半導体層側に対して反対側に設けられた、前記第2半導体層よりも不純物濃度の低い第1導電型の第3半導体層と、
前記第3半導体層の、前記第2半導体層側に対して反対側に設けられた第2導電型の第4半導体層と、
前記第1半導体層の、前記第2半導体層側に対して反対側に設けられた第1電極と、
前記第4半導体層の、前記第3半導体層側に対して反対側に設けられた第2電極と、
を備え、
前記第1半導体層の、前記第2半導体層と接する表面に、前記第1半導体層の導電型を決定する第1不純物と異なる種類の第2不純物を含むことを特徴とする炭化珪素半導体装置。 - 前記第2半導体層は、キャリアのライフタイムを制御する層であることを特徴とする請求項1に記載の炭化珪素半導体装置。
- 前記第2半導体層は、不純物として窒素を含み、不純物濃度が1×1018〜2×1019/cm3であることを特徴とする請求項1または2に記載の炭化珪素半導体装置。
- 前記第2半導体層の、前記第1半導体層と接する表面に、前記第2不純物を含むことを特徴とする請求項3に記載の炭化珪素半導体装置。
- 前記第1不純物は、窒素であり、
前記第2不純物は、バナジウム、チタン、鉄、クロムまたはホウ素であることを特徴とする請求項1〜4のいずれか一つに記載の炭化珪素半導体装置。 - 第1導電型の第1半導体層の表面に、前記第1半導体層の導電型を決定する第1不純物と異なる種類の第2不純物をイオン注入する第1工程と、
前記第1半導体層の前記表面上に、前記第1半導体層よりも不純物濃度の高い第1導電型の第2半導体層を形成する第2工程と、
前記第2半導体層の、前記第1半導体層側に対して反対側に、前記第2半導体層よりも不純物濃度の低い第1導電型の第3半導体層を形成する第3工程と、
前記第3半導体層の、前記第2半導体層側に対して反対側に第2導電型の第4半導体層を形成する第4工程と、
前記第1半導体層の、前記第2半導体層側に対して反対側に第1電極を形成する第5工程と、
前記第4半導体層の、前記第3半導体層側に対して反対側に第2電極を形成する第6工程と、
を含むことを特徴とする炭化珪素半導体装置の製造方法。 - 前記第1不純物は、窒素であり、
前記第2不純物は、バナジウム、チタン、鉄、クロムまたはホウ素であり、
前記第1工程では、前記第2不純物のイオン注入のドーズ量を1×1016〜1×1020/cm3とし、前記第2不純物の注入深さを0.3μm以上にすることを特徴とする請求項6に記載の炭化珪素半導体装置の製造方法。
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WO2023157972A1 (ja) * | 2022-02-21 | 2023-08-24 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
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DE112015000206T5 (de) | 2014-10-03 | 2016-08-25 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
JP7443735B2 (ja) * | 2019-11-29 | 2024-03-06 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
JP7501000B2 (ja) * | 2020-03-03 | 2024-06-18 | 富士電機株式会社 | 半導体装置 |
CN112068675B (zh) * | 2020-09-08 | 2021-12-31 | 深圳市中维电子科技有限公司 | 一种自动涂抹导热硅脂的集成电路散热装置 |
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