JPWO2020100995A1 - 半導体装置および製造方法 - Google Patents
半導体装置および製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 163
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 153
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 153
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 136
- 239000000758 substrate Substances 0.000 claims abstract description 111
- 230000004913 activation Effects 0.000 claims abstract description 16
- 238000009826 distribution Methods 0.000 claims description 137
- 239000012535 impurity Substances 0.000 claims description 71
- 239000000126 substance Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- 150000002431 hydrogen Chemical class 0.000 abstract description 7
- 230000007547 defect Effects 0.000 description 68
- 239000001307 helium Substances 0.000 description 56
- 229910052734 helium Inorganic materials 0.000 description 56
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 46
- 239000000386 donor Substances 0.000 description 32
- 239000011148 porous material Substances 0.000 description 27
- 239000000370 acceptor Substances 0.000 description 23
- -1 hydrogen ions Chemical class 0.000 description 19
- 239000002019 doping agent Substances 0.000 description 12
- 238000003860 storage Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 239000000852 hydrogen donor Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 230000001133 acceleration Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- KPSZQYZCNSCYGG-UHFFFAOYSA-N [B].[B] Chemical compound [B].[B] KPSZQYZCNSCYGG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Abstract
Description
特許文献1 米国特許出願公開第2016/141399号明細書
Claims (14)
- 半導体基板を備える半導体装置であって、
前記半導体基板は、水素を含む水素含有領域を有し、
前記水素含有領域は、含有する水素の濃度および水素の活性化率から定まる仮想キャリア濃度よりもキャリア濃度の高い高濃度領域を有する半導体装置。 - 前記高濃度領域のキャリア濃度は、前記半導体基板のベースドーピング濃度よりも高い
請求項1に記載の半導体装置。 - 前記水素含有領域の深さ方向におけるキャリア濃度分布は、複数の第1ピークを有し、
前記深さ方向において、前記第1ピークの間に前記高濃度領域が配置されている
請求項1または2に記載の半導体装置。 - 前記高濃度領域は、前記第1ピークのうち、最も深く配置された前記第1ピークと、次に深く配置された前記第1ピークとの間に配置されている
請求項3に記載の半導体装置。 - 前記高濃度領域のキャリア濃度分布は、前記深さ方向において第2ピークを有する
請求項3または4に記載の半導体装置。 - 前記高濃度領域の前記第2ピークの幅は、いずれの前記第1ピークの幅よりも大きい
請求項5に記載の半導体装置。 - 前記水素含有領域における水素化学濃度分布は、複数の第5ピークを有し、
前記第2ピークの半値全幅は、前記第5ピークのうち、最も深く配置された前記第5ピークと、次に深く配置された前記第5ピークとの第5ピーク間隔の半分よりも大きい
請求項5または6に記載の半導体装置。 - 前記第2ピークの半値全幅の範囲に、最も深く配置された前記第5ピークと、次に深く配置された前記第5ピークとが含まれている
請求項7に記載の半導体装置。 - 前記水素含有領域は、キャリアのライフタイムを調整する調整用不純物を含むライフタイム制御領域を有し、
前記深さ方向における前記調整用不純物の濃度分布は第3ピークを有し、
前記高濃度領域は、前記調整用不純物の濃度分布の前記第3ピークよりも深い位置に設けられている
請求項3から8のいずれか一項に記載の半導体装置。 - 前記第3ピークの半値全幅は、複数の前記第1ピークの前記深さ方向における間隔よりも大きい
請求項9に記載の半導体装置。 - 前記高濃度領域における酸素濃度が1×1017/cm3以上である
請求項1から10のいずれか一項に記載の半導体装置。 - 前記高濃度領域における炭素濃度が1×1013/cm3以上である
請求項1から11のいずれか一項に記載の半導体装置。 - 前記半導体基板は、
N型のドリフト領域と、
前記半導体基板の上面に接して設けられ、前記ドリフト領域よりもキャリア濃度の高いN型のエミッタ領域と、
前記エミッタ領域と前記ドリフト領域との間に設けられたP型のベース領域と、
前記半導体基板の下面に接して設けられたP型のコレクタ領域と、
前記コレクタ領域と前記ドリフト領域との間に設けられ、前記ドリフト領域よりもキャリア濃度の高いN型のバッファ領域と
を有し、
前記水素含有領域は、前記バッファ領域に含まれている
請求項1から12のいずれか一項に記載の半導体装置。 - 半導体基板を備える半導体装置の製造方法であって、
前記半導体基板に水素を注入して水素含有領域を形成し、
前記水素含有領域に、キャリアのライフタイムを調整するライフタイム制御領域を形成し、
前記半導体基板を熱処理することで、前記水素含有領域において、含有する不純物の濃度および不純物の活性化率から定まる仮想キャリア濃度よりもキャリア濃度の高い高濃度領域を形成する
製造方法。
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