JP2014523110A - レーザスクライビング・プラズマエッチングによるデバイスの個片化用のインサイチュー蒸着マスク層 - Google Patents

レーザスクライビング・プラズマエッチングによるデバイスの個片化用のインサイチュー蒸着マスク層 Download PDF

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Publication number
JP2014523110A
JP2014523110A JP2014515839A JP2014515839A JP2014523110A JP 2014523110 A JP2014523110 A JP 2014523110A JP 2014515839 A JP2014515839 A JP 2014515839A JP 2014515839 A JP2014515839 A JP 2014515839A JP 2014523110 A JP2014523110 A JP 2014523110A
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Japan
Prior art keywords
plasma
mask
layer
substrate
polymer
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Pending
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JP2014515839A
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Japanese (ja)
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JP2014523110A5 (enExample
Inventor
マドハバ ラオ ヤラマンチリ
ウェイシェン リ
ブラッド イートン
サラブジート シン
アジャイ クマー
バンキウ ウー
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2014523110A publication Critical patent/JP2014523110A/ja
Publication of JP2014523110A5 publication Critical patent/JP2014523110A5/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)
JP2014515839A 2011-06-15 2012-05-23 レーザスクライビング・プラズマエッチングによるデバイスの個片化用のインサイチュー蒸着マスク層 Pending JP2014523110A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/160,973 2011-06-15
US13/160,973 US8598016B2 (en) 2011-06-15 2011-06-15 In-situ deposited mask layer for device singulation by laser scribing and plasma etch
PCT/US2012/039207 WO2012173759A2 (en) 2011-06-15 2012-05-23 In-situ deposited mask layer for device singulation by laser scribing and plasma etch

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014257445A Division JP6223325B2 (ja) 2011-06-15 2014-12-19 レーザスクライビング・プラズマエッチングによるデバイスの個片化用のインサイチュー蒸着マスク層

Publications (2)

Publication Number Publication Date
JP2014523110A true JP2014523110A (ja) 2014-09-08
JP2014523110A5 JP2014523110A5 (enExample) 2014-12-18

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Family Applications (2)

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JP2014515839A Pending JP2014523110A (ja) 2011-06-15 2012-05-23 レーザスクライビング・プラズマエッチングによるデバイスの個片化用のインサイチュー蒸着マスク層
JP2014257445A Expired - Fee Related JP6223325B2 (ja) 2011-06-15 2014-12-19 レーザスクライビング・プラズマエッチングによるデバイスの個片化用のインサイチュー蒸着マスク層

Family Applications After (1)

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Country Status (6)

Country Link
US (2) US8598016B2 (enExample)
JP (2) JP2014523110A (enExample)
KR (2) KR102060024B1 (enExample)
CN (1) CN103608900A (enExample)
TW (2) TWI469843B (enExample)
WO (1) WO2012173759A2 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015177111A (ja) * 2014-03-17 2015-10-05 株式会社東芝 プラズマダイシング方法およびプラズマダイシング装置
JP2016171262A (ja) * 2015-03-13 2016-09-23 古河電気工業株式会社 半導体ウェハの処理方法、半導体チップおよび表面保護テープ
JP2018190902A (ja) * 2017-05-10 2018-11-29 株式会社ディスコ 加工方法
JP2019050237A (ja) * 2017-09-07 2019-03-28 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
JP2019518328A (ja) * 2016-05-13 2019-06-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ レーザスクライビング／プラズマエッチングによるハイブリッドのウエハ個片化処理用エッチングマスク
JP2019125723A (ja) * 2018-01-17 2019-07-25 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
WO2019189173A1 (ja) * 2018-03-30 2019-10-03 リンテック株式会社 半導体チップの製造方法
JP2021048390A (ja) * 2019-09-13 2021-03-25 東京エレクトロン株式会社 エッチング方法、プラズマ処理装置、及び基板処理システム
JP2021524675A (ja) * 2018-06-04 2021-09-13 プラズマ − サーム、エルエルシー ダイ付着フィルムをダイシングする方法
KR102901251B1 (ko) * 2019-09-13 2025-12-16 도쿄엘렉트론가부시키가이샤 에칭 방법, 플라즈마 처리 장치 및 기판 처리 시스템

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9343365B2 (en) * 2011-03-14 2016-05-17 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8557683B2 (en) 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-step and asymmetrically shaped laser beam scribing
US8703581B2 (en) 2011-06-15 2014-04-22 Applied Materials, Inc. Water soluble mask for substrate dicing by laser and plasma etch
US8557682B2 (en) 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-layer mask for substrate dicing by laser and plasma etch
US8598016B2 (en) 2011-06-15 2013-12-03 Applied Materials, Inc. In-situ deposited mask layer for device singulation by laser scribing and plasma etch
US9029242B2 (en) 2011-06-15 2015-05-12 Applied Materials, Inc. Damage isolation by shaped beam delivery in laser scribing process
US8845854B2 (en) * 2012-07-13 2014-09-30 Applied Materials, Inc. Laser, plasma etch, and backside grind process for wafer dicing
US8993414B2 (en) * 2012-07-13 2015-03-31 Applied Materials, Inc. Laser scribing and plasma etch for high die break strength and clean sidewall
US8859397B2 (en) 2012-07-13 2014-10-14 Applied Materials, Inc. Method of coating water soluble mask for laser scribing and plasma etch
US9553021B2 (en) * 2012-09-03 2017-01-24 Infineon Technologies Ag Method for processing a wafer and method for dicing a wafer
US8980726B2 (en) * 2013-01-25 2015-03-17 Applied Materials, Inc. Substrate dicing by laser ablation and plasma etch damage removal for ultra-thin wafers
US9620379B2 (en) * 2013-03-14 2017-04-11 Applied Materials, Inc. Multi-layer mask including non-photodefinable laser energy absorbing layer for substrate dicing by laser and plasma etch
US20150011073A1 (en) * 2013-07-02 2015-01-08 Wei-Sheng Lei Laser scribing and plasma etch for high die break strength and smooth sidewall
US20150037915A1 (en) * 2013-07-31 2015-02-05 Wei-Sheng Lei Method and system for laser focus plane determination in a laser scribing process
WO2015023287A1 (en) * 2013-08-15 2015-02-19 Applied Materials, Inc. Method of coating water soluble mask for laser scribing and plasma etch
US9646951B2 (en) * 2013-12-10 2017-05-09 Semiconductor Components Industries, Llc Method of forming a semiconductor device and structure therefor
US8927393B1 (en) * 2014-01-29 2015-01-06 Applied Materials, Inc. Water soluble mask formation by dry film vacuum lamination for laser and plasma dicing
US9130030B1 (en) * 2014-03-07 2015-09-08 Applied Materials, Inc. Baking tool for improved wafer coating process
US20150287638A1 (en) * 2014-04-04 2015-10-08 Jungrae Park Hybrid wafer dicing approach using collimated laser scribing process and plasma etch
US9076860B1 (en) * 2014-04-04 2015-07-07 Applied Materials, Inc. Residue removal from singulated die sidewall
US8932939B1 (en) * 2014-04-14 2015-01-13 Applied Materials, Inc. Water soluble mask formation by dry film lamination
US9472458B2 (en) * 2014-06-04 2016-10-18 Semiconductor Components Industries, Llc Method of reducing residual contamination in singulated semiconductor die
KR101650076B1 (ko) * 2014-06-10 2016-08-22 한국미쯔보시다이아몬드공업(주) 취성 재료 기판의 가공방법
US9142459B1 (en) * 2014-06-30 2015-09-22 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with mask application by vacuum lamination
CN104384722A (zh) * 2014-10-28 2015-03-04 北京理工大学 一种基于n型掺杂的飞秒激光加工半导体的方法
DE102015100686A1 (de) * 2015-01-19 2016-07-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von Halbleiterchips und Halbleiterchip
US9793129B2 (en) * 2015-05-20 2017-10-17 Infineon Technologies Ag Segmented edge protection shield
WO2017082210A1 (ja) * 2015-11-09 2017-05-18 古河電気工業株式会社 半導体チップの製造方法及びこれに用いるマスク一体型表面保護テープ
JP6587911B2 (ja) * 2015-11-16 2019-10-09 株式会社ディスコ ウエーハの分割方法
JP6604476B2 (ja) * 2016-03-11 2019-11-13 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
US9725302B1 (en) * 2016-08-25 2017-08-08 Applied Materials, Inc. Wafer processing equipment having exposable sensing layers
CN109904110B (zh) * 2017-12-08 2021-06-04 中芯长电半导体（江阴）有限公司 形成垂直孔的刻蚀方法及其结构
US11127599B2 (en) * 2018-01-12 2021-09-21 Applied Materials, Inc. Methods for etching a hardmask layer
CN110634796A (zh) 2018-06-25 2019-12-31 半导体元件工业有限责任公司 用于处理电子管芯的方法及半导体晶圆和管芯的切单方法
US10916474B2 (en) 2018-06-25 2021-02-09 Semiconductor Components Industries, Llc Method of reducing residual contamination in singulated semiconductor die
JP7109862B2 (ja) * 2018-07-10 2022-08-01 株式会社ディスコ 半導体ウェーハの加工方法
KR102698782B1 (ko) 2018-11-09 2024-08-27 삼성전자주식회사 자기 기억 소자
US10886136B2 (en) * 2019-01-31 2021-01-05 Tokyo Electron Limited Method for processing substrates
CN109848565A (zh) * 2019-04-02 2019-06-07 西安交通大学 基于等离子体纳米结构辅助的飞秒激光纳米加工方法及系统
US11476123B2 (en) * 2019-09-13 2022-10-18 Tokyo Electron Limited Etching method, plasma processing apparatus, and substrate processing system
KR102673730B1 (ko) 2019-11-07 2024-06-10 삼성전자주식회사 반도체 소자 및 이를 구비한 반도체 패키지
CN113178382A (zh) * 2020-12-30 2021-07-27 集美大学 一种晶圆级金刚石衬底的抛光方法和晶圆级金刚石衬底
US11705365B2 (en) * 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging
CN113649709A (zh) * 2021-08-16 2021-11-16 湖北三维半导体集成创新中心有限责任公司 晶圆切割方法
JP2023135711A (ja) * 2022-03-16 2023-09-29 株式会社ディスコ チップの製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868930A (ja) * 1981-10-20 1983-04-25 Fujitsu Ltd 半導体装置の製造方法
JPH0364758A (ja) * 1989-08-02 1991-03-20 Hitachi Ltd フォトレジスト剥離方法
JP2000294523A (ja) * 1999-04-01 2000-10-20 Sony Corp 半導体製造装置および半導体装置の製造方法
JP2002141259A (ja) * 2000-10-30 2002-05-17 Sharp Corp 半導体装置の製法
WO2003096754A1 (en) * 2002-05-09 2003-11-20 Dai Nippon Printing Co., Ltd. Production method for electroluminescent element
JP2007281526A (ja) * 2007-07-24 2007-10-25 Matsushita Electric Ind Co Ltd 半導体ウェハの処理方法

Family Cites Families (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2691794A (en) * 1954-01-28 1954-10-19 Alexander H Gonyea Clam opener
US4049944A (en) 1973-02-28 1977-09-20 Hughes Aircraft Company Process for fabricating small geometry semiconductive devices including integrated components
US4684437A (en) * 1985-10-31 1987-08-04 International Business Machines Corporation Selective metal etching in metal/polymer structures
JP3165304B2 (ja) * 1992-12-04 2001-05-14 株式会社半導体エネルギー研究所 半導体装置の作製方法及び半導体処理装置
US5691794A (en) * 1993-02-01 1997-11-25 Canon Kabushiki Kaisha Liquid crystal display device
US6897100B2 (en) * 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US5656186A (en) * 1994-04-08 1997-08-12 The Regents Of The University Of Michigan Method for controlling configuration of laser induced breakdown and ablation
US5593606A (en) 1994-07-18 1997-01-14 Electro Scientific Industries, Inc. Ultraviolet laser system and method for forming vias in multi-layered targets
JPH09216085A (ja) 1996-02-07 1997-08-19 Canon Inc 基板の切断方法及び切断装置
JPH1027971A (ja) 1996-07-10 1998-01-27 Nec Corp 有機薄膜多層配線基板の切断方法
DE69725245T2 (de) * 1996-08-01 2004-08-12 Surface Technoloy Systems Plc Verfahren zur Ätzung von Substraten
US6426484B1 (en) 1996-09-10 2002-07-30 Micron Technology, Inc. Circuit and method for heating an adhesive to package or rework a semiconductor die
US5920973A (en) 1997-03-09 1999-07-13 Electro Scientific Industries, Inc. Hole forming system with multiple spindles per station
JP3230572B2 (ja) 1997-05-19 2001-11-19 日亜化学工業株式会社 窒化物系化合物半導体素子の製造方法及び半導体発光素子
US6057180A (en) 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
US6562698B2 (en) 1999-06-08 2003-05-13 Kulicke & Soffa Investments, Inc. Dual laser cutting of wafers
JP2001110811A (ja) 1999-10-08 2001-04-20 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP4387007B2 (ja) 1999-10-26 2009-12-16 株式会社ディスコ 半導体ウェーハの分割方法
JP2001144126A (ja) 1999-11-12 2001-05-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および半導体装置
JP2001148358A (ja) 1999-11-19 2001-05-29 Disco Abrasive Syst Ltd 半導体ウェーハ及び該半導体ウェーハの分割方法
CN1276495C (zh) 2000-01-10 2006-09-20 电子科学工业公司 以具超短脉冲宽度的激光脉冲的脉冲串处理存储器链路的激光器系统及方法
US6887804B2 (en) 2000-01-10 2005-05-03 Electro Scientific Industries, Inc. Passivation processing over a memory link
US6383931B1 (en) 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
US6407363B2 (en) 2000-03-30 2002-06-18 Electro Scientific Industries, Inc. Laser system and method for single press micromachining of multilayer workpieces
US7046679B2 (en) 2000-06-09 2006-05-16 Broadcom Corporation Gigabit switch with frame forwarding and address learning
JP2002016123A (ja) * 2000-06-29 2002-01-18 Hitachi Ltd 試料処理装置および処理方法
GB2386184B (en) 2000-07-12 2004-05-26 Electro Scient Ind Inc UV laser system and method for single pulse severing of IC fuses
US6676878B2 (en) 2001-01-31 2004-01-13 Electro Scientific Industries, Inc. Laser segmented cutting
JP4109823B2 (ja) 2000-10-10 2008-07-02 株式会社東芝 半導体装置の製造方法
US6759275B1 (en) 2001-09-04 2004-07-06 Megic Corporation Method for making high-performance RF integrated circuits
DE60211728T2 (de) 2001-10-01 2007-05-03 Xsil Technology Ltd. Verfahren und vorrichtung zur bearbeitung von substraten
US6642127B2 (en) 2001-10-19 2003-11-04 Applied Materials, Inc. Method for dicing a semiconductor wafer
JP3910843B2 (ja) 2001-12-13 2007-04-25 東京エレクトロン株式会社 半導体素子分離方法及び半導体素子分離装置
JP4006994B2 (ja) 2001-12-18 2007-11-14 株式会社リコー 立体構造体の加工方法、立体形状品の製造方法及び立体構造体
US6706998B2 (en) 2002-01-11 2004-03-16 Electro Scientific Industries, Inc. Simulated laser spot enlargement
AU2003246348A1 (en) 2002-02-25 2003-09-09 Disco Corporation Method for dividing semiconductor wafer
KR100451950B1 (ko) 2002-02-25 2004-10-08 삼성전자주식회사 이미지 센서 소자 웨이퍼 소잉 방법
JP2003257896A (ja) 2002-02-28 2003-09-12 Disco Abrasive Syst Ltd 半導体ウェーハの分割方法
DE60303371T2 (de) 2002-04-19 2006-08-10 Xsil Technology Ltd. Laser-behandlung
JP2004031526A (ja) 2002-06-24 2004-01-29 Toyoda Gosei Co Ltd ３族窒化物系化合物半導体素子の製造方法
US6582983B1 (en) 2002-07-12 2003-06-24 Keteca Singapore Singapore Method and wafer for maintaining ultra clean bonding pads on a wafer
JP4286497B2 (ja) 2002-07-17 2009-07-01 新光電気工業株式会社 半導体装置の製造方法
JP2004090534A (ja) * 2002-09-02 2004-03-25 Tokyo Electron Ltd 基板の加工装置および加工方法
JP3908148B2 (ja) 2002-10-28 2007-04-25 シャープ株式会社 積層型半導体装置
US20050023260A1 (en) * 2003-01-10 2005-02-03 Shinya Takyu Semiconductor wafer dividing apparatus and semiconductor device manufacturing method
US20040157457A1 (en) * 2003-02-12 2004-08-12 Songlin Xu Methods of using polymer films to form micro-structures
JP2004273895A (ja) 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd 半導体ウエーハの分割方法
US7087452B2 (en) * 2003-04-22 2006-08-08 Intel Corporation Edge arrangements for integrated circuit chips
JP2004322168A (ja) 2003-04-25 2004-11-18 Disco Abrasive Syst Ltd レーザー加工装置
JP4231349B2 (ja) 2003-07-02 2009-02-25 株式会社ディスコ レーザー加工方法およびレーザー加工装置
JP4408361B2 (ja) 2003-09-26 2010-02-03 株式会社ディスコ ウエーハの分割方法
US7128806B2 (en) 2003-10-21 2006-10-31 Applied Materials, Inc. Mask etch processing apparatus
JP4471632B2 (ja) 2003-11-18 2010-06-02 株式会社ディスコ ウエーハの加工方法
JP2005203541A (ja) 2004-01-15 2005-07-28 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法
US7459377B2 (en) 2004-06-08 2008-12-02 Panasonic Corporation Method for dividing substrate
US7687740B2 (en) 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
JP4018088B2 (ja) * 2004-08-02 2007-12-05 松下電器産業株式会社 半導体ウェハの分割方法及び半導体素子の製造方法
US7199050B2 (en) 2004-08-24 2007-04-03 Micron Technology, Inc. Pass through via technology for use during the manufacture of a semiconductor device
JP4018096B2 (ja) 2004-10-05 2007-12-05 松下電器産業株式会社 半導体ウェハの分割方法、及び半導体素子の製造方法
JP4288229B2 (ja) 2004-12-24 2009-07-01 パナソニック株式会社 半導体チップの製造方法
US7875898B2 (en) 2005-01-24 2011-01-25 Panasonic Corporation Semiconductor device
JP2006253402A (ja) * 2005-03-10 2006-09-21 Nec Electronics Corp 半導体装置の製造方法
JP2006248191A (ja) * 2005-03-14 2006-09-21 Asahi Kasei Chemicals Corp シート状あるいは円筒状の樹脂製印刷基材の製造方法
JP4478053B2 (ja) 2005-03-29 2010-06-09 株式会社ディスコ 半導体ウエーハ処理方法
JP4285455B2 (ja) 2005-07-11 2009-06-24 パナソニック株式会社 半導体チップの製造方法
JP4599243B2 (ja) 2005-07-12 2010-12-15 株式会社ディスコ レーザー加工装置
TWI295816B (en) * 2005-07-19 2008-04-11 Applied Materials Inc Hybrid pvd-cvd system
WO2007019493A2 (en) * 2005-08-05 2007-02-15 Reveo, Inc. Process for making single crystalline flakes using deep etching
US9138913B2 (en) 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
US20070079866A1 (en) * 2005-10-07 2007-04-12 Applied Materials, Inc. System and method for making an improved thin film solar cell interconnect
JP4769560B2 (ja) 2005-12-06 2011-09-07 株式会社ディスコ ウエーハの分割方法
JP4372115B2 (ja) 2006-05-12 2009-11-25 パナソニック株式会社 半導体装置の製造方法、および半導体モジュールの製造方法
US8198566B2 (en) 2006-05-24 2012-06-12 Electro Scientific Industries, Inc. Laser processing of workpieces containing low-k dielectric material
US20070272666A1 (en) 2006-05-25 2007-11-29 O'brien James N Infrared laser wafer scribing using short pulses
JP4480728B2 (ja) 2006-06-09 2010-06-16 パナソニック株式会社 Ｍｅｍｓマイクの製造方法
KR101262386B1 (ko) 2006-09-25 2013-05-08 엘지이노텍 주식회사 질화물 반도체 발광소자의 제조 방법
JP4544231B2 (ja) 2006-10-06 2010-09-15 パナソニック株式会社 半導体チップの製造方法
JP4840174B2 (ja) 2007-02-08 2011-12-21 パナソニック株式会社 半導体チップの製造方法
JP4840200B2 (ja) 2007-03-09 2011-12-21 パナソニック株式会社 半導体チップの製造方法
US7926410B2 (en) 2007-05-01 2011-04-19 J.R. Automation Technologies, L.L.C. Hydraulic circuit for synchronized horizontal extension of cylinders
WO2008142911A1 (en) 2007-05-18 2008-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2009034694A (ja) 2007-07-31 2009-02-19 Disco Abrasive Syst Ltd レーザ加工方法
US7989319B2 (en) 2007-08-07 2011-08-02 Semiconductor Components Industries, Llc Semiconductor die singulation method
US8012857B2 (en) 2007-08-07 2011-09-06 Semiconductor Components Industries, Llc Semiconductor die singulation method
TW200935506A (en) 2007-11-16 2009-08-16 Panasonic Corp Plasma dicing apparatus and semiconductor chip manufacturing method
JP2009141276A (ja) * 2007-12-10 2009-06-25 Fuji Electric Device Technology Co Ltd 半導体装置およびその製造方法
US8614151B2 (en) 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
US7859084B2 (en) 2008-02-28 2010-12-28 Panasonic Corporation Semiconductor substrate
JP2009260272A (ja) * 2008-03-25 2009-11-05 Panasonic Corp 基板の加工方法および半導体チップの製造方法ならびに樹脂接着層付き半導体チップの製造方法
CN101990480A (zh) 2008-04-10 2011-03-23 应用材料股份有限公司 激光刻划平台与杂合书写策略
TWI368271B (en) * 2008-07-02 2012-07-11 Powertech Technology Inc Equipment and method for cutting big size wafer
KR101026010B1 (ko) 2008-08-13 2011-03-30 삼성전기주식회사 레이저 가공장치 및 레이저 가공방법
US8426250B2 (en) * 2008-10-22 2013-04-23 Intel Corporation Laser-assisted chemical singulation of a wafer
JP2010165963A (ja) 2009-01-19 2010-07-29 Furukawa Electric Co Ltd:The 半導体ウェハの処理方法
US10307862B2 (en) 2009-03-27 2019-06-04 Electro Scientific Industries, Inc Laser micromachining with tailored bursts of short laser pulses
US8642448B2 (en) 2010-06-22 2014-02-04 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
US8557682B2 (en) 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-layer mask for substrate dicing by laser and plasma etch
US8703581B2 (en) 2011-06-15 2014-04-22 Applied Materials, Inc. Water soluble mask for substrate dicing by laser and plasma etch
US8557683B2 (en) 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-step and asymmetrically shaped laser beam scribing
US8598016B2 (en) 2011-06-15 2013-12-03 Applied Materials, Inc. In-situ deposited mask layer for device singulation by laser scribing and plasma etch
US8845854B2 (en) * 2012-07-13 2014-09-30 Applied Materials, Inc. Laser, plasma etch, and backside grind process for wafer dicing

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868930A (ja) * 1981-10-20 1983-04-25 Fujitsu Ltd 半導体装置の製造方法
JPH0364758A (ja) * 1989-08-02 1991-03-20 Hitachi Ltd フォトレジスト剥離方法
JP2000294523A (ja) * 1999-04-01 2000-10-20 Sony Corp 半導体製造装置および半導体装置の製造方法
JP2002141259A (ja) * 2000-10-30 2002-05-17 Sharp Corp 半導体装置の製法
WO2003096754A1 (en) * 2002-05-09 2003-11-20 Dai Nippon Printing Co., Ltd. Production method for electroluminescent element
JP2007281526A (ja) * 2007-07-24 2007-10-25 Matsushita Electric Ind Co Ltd 半導体ウェハの処理方法

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015177111A (ja) * 2014-03-17 2015-10-05 株式会社東芝 プラズマダイシング方法およびプラズマダイシング装置
JP2016171262A (ja) * 2015-03-13 2016-09-23 古河電気工業株式会社 半導体ウェハの処理方法、半導体チップおよび表面保護テープ
KR20170094301A (ko) * 2015-03-13 2017-08-17 후루카와 덴키 고교 가부시키가이샤 반도체 웨이퍼의 처리 방법, 반도체 칩 및 표면 보호 테이프
US10418267B2 (en) 2015-03-13 2019-09-17 Furukawa Electric Co., Ltd. Method of processing a semiconductor wafer, semiconductor chip, and surface protective tape
KR102070031B1 (ko) 2015-03-13 2020-01-29 후루카와 덴키 고교 가부시키가이샤 반도체 웨이퍼의 처리 방법, 반도체 칩 및 표면 보호 테이프
JP2019518328A (ja) * 2016-05-13 2019-06-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ レーザスクライビング／プラズマエッチングによるハイブリッドのウエハ個片化処理用エッチングマスク
JP2018190902A (ja) * 2017-05-10 2018-11-29 株式会社ディスコ 加工方法
JP2019050237A (ja) * 2017-09-07 2019-03-28 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
JP7042437B2 (ja) 2017-09-07 2022-03-28 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
JP6994646B2 (ja) 2018-01-17 2022-01-14 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
JP2019125723A (ja) * 2018-01-17 2019-07-25 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
WO2019189173A1 (ja) * 2018-03-30 2019-10-03 リンテック株式会社 半導体チップの製造方法
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