JP2015177111A - プラズマダイシング方法およびプラズマダイシング装置 - Google Patents
プラズマダイシング方法およびプラズマダイシング装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000005530 etching Methods 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 21
- 238000002161 passivation Methods 0.000 claims description 18
- 238000005137 deposition process Methods 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- -1 fluorine ions Chemical class 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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Abstract
Description
Claims (7)
- 基板と、前記基板上に分離して形成された複数の半導体層と、それぞれの前記半導体層上に設けられたメタル電極と、前記半導体層を覆うとともに前記メタル電極の一部を露出させるパッド開口部を有するパッシベーション膜と、を含むウェーハにおける前記複数の半導体層の間のダイシング領域の前記基板をプラズマエッチングするプラズマダイシング方法であって、
第1のガスのプラズマを含む雰囲気中で、前記ダイシング領域、および前記パッド開口部に露出する前記メタル電極上に膜を堆積させる堆積処理と、第2のガスのプラズマを含む雰囲気中で前記ウェーハを支持する下部電極に第1のバイアスパワーを与えて、前記膜をエッチングするエッチング処理と、を含み、
前記エッチング処理中に、前記ダイシング領域の前記基板のエッチングにともなう発光が検出されると、前記第1のバイアスパワーを第2のバイアスパワーに低下させて、前記基板をエッチングするプラズマダイシング方法。 - 前記第2のバイアスパワーが前記下部電極に与えられているときの前記ウェーハに対する入射イオンのエネルギーは、前記メタル電極をスパッタするエネルギーよりも低い請求項1記載のプラズマダイシング方法。
- 前記堆積処理と前記エッチング処理とが交互に複数回繰り返されて、前記ダイシング領域の前記基板がエッチングされる請求項1または2に記載のプラズマダイシング方法。
- 前記パッド開口部のアスペクト比は、前記ダイシング領域のアスペクト比よりも小さい請求項1〜3のいずれか1つに記載のプラズマダイシング方法。
- 前記基板はシリコン基板である請求項1〜4のいずれか1つに記載のプラズマダイシング方法。
- 前記第1のガスはフロロカーボン系ガスを含み、前記第2のガスはフッ素系ガスを含む請求項1〜5のいずれか1つに記載のプラズマダイシング方法。
- プラズマ雰囲気を維持可能な処理室と、
基板と、前記基板上に分離して形成された複数の半導体層と、それぞれの前記半導体層上に設けられたメタル電極と、前記半導体層を覆うとともに前記メタル電極の一部を露出させるパッド開口部を有するパッシベーション膜と、を含むウェーハを、前記処理室内で支持する下部電極と、
前記下部電極にバイアスパワーを与える電源と、
前記基板のエッチングにともなう発光を検出するセンサと、
第1のガスのプラズマを含む雰囲気中で、前記複数の半導体層の間のダイシング領域、および前記パッド開口部に露出する前記メタル電極上に膜を堆積させる堆積処理と、第2のガスのプラズマを含む雰囲気中で前記下部電極に第1のバイアスパワーを与えて、前記膜をエッチングするエッチング処理と、を切り替え可能であり、前記エッチング処理中に前記センサによって前記基板のエッチングが検出されると、前記第1のバイアスパワーを第2のバイアスパワーに低下させる制御部と、
を備えたプラズマダイシング装置。
Priority Applications (3)
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JP2014053705A JP6101227B2 (ja) | 2014-03-17 | 2014-03-17 | プラズマダイシング方法およびプラズマダイシング装置 |
CN201410406586.1A CN104934312A (zh) | 2014-03-17 | 2014-08-18 | 等离子切割方法及等离子切割装置 |
US14/481,110 US20150262879A1 (en) | 2014-03-17 | 2014-09-09 | Plasma dicing method and plasma dicing apparatus |
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JP2014053705A JP6101227B2 (ja) | 2014-03-17 | 2014-03-17 | プラズマダイシング方法およびプラズマダイシング装置 |
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JP2015177111A true JP2015177111A (ja) | 2015-10-05 |
JP6101227B2 JP6101227B2 (ja) | 2017-03-22 |
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Cited By (5)
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JP2017162998A (ja) * | 2016-03-09 | 2017-09-14 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
JP2018006758A (ja) * | 2016-07-04 | 2018-01-11 | エスピーティーエス テクノロジーズ リミティド | 状態検出方法 |
JP2018018980A (ja) * | 2016-07-28 | 2018-02-01 | 株式会社ディスコ | デバイスウエーハの加工方法 |
WO2018142976A1 (ja) * | 2017-02-01 | 2018-08-09 | 株式会社村田製作所 | Csp型半導体デバイスおよびその製造方法 |
JP2018182026A (ja) * | 2017-04-11 | 2018-11-15 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
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JP6492286B2 (ja) * | 2015-09-25 | 2019-04-03 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
US9824896B2 (en) * | 2015-11-04 | 2017-11-21 | Lam Research Corporation | Methods and systems for advanced ion control for etching processes |
JP6467592B2 (ja) * | 2016-02-04 | 2019-02-13 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法および電子部品実装構造体の製造方法ならびに電子部品実装構造体 |
JP2018110156A (ja) | 2016-12-28 | 2018-07-12 | キヤノン株式会社 | 半導体装置、その製造方法およびカメラ |
US10957626B2 (en) * | 2017-12-19 | 2021-03-23 | Thermo Electron Scientific Instruments Llc | Sensor device with carbon nanotube sensor positioned on first and second substrates |
CN111430212B (zh) * | 2020-04-15 | 2022-08-23 | Tcl华星光电技术有限公司 | 一种蚀刻设备 |
US20220157657A1 (en) * | 2020-11-13 | 2022-05-19 | International Business Machines Corporation | Singulating individual chips from wafers having small chips and small separation channels |
CN112863992B (zh) * | 2021-01-12 | 2023-01-17 | 广东中图半导体科技股份有限公司 | 一种等离子刻蚀装置 |
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- 2014-09-09 US US14/481,110 patent/US20150262879A1/en not_active Abandoned
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