JP2014500630A5 - - Google Patents
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- Publication number
- JP2014500630A5 JP2014500630A5 JP2013546103A JP2013546103A JP2014500630A5 JP 2014500630 A5 JP2014500630 A5 JP 2014500630A5 JP 2013546103 A JP2013546103 A JP 2013546103A JP 2013546103 A JP2013546103 A JP 2013546103A JP 2014500630 A5 JP2014500630 A5 JP 2014500630A5
- Authority
- JP
- Japan
- Prior art keywords
- microelectronic
- bond pad
- metal layer
- microelectronic assembly
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims description 74
- 239000002184 metal Substances 0.000 claims description 72
- 238000004377 microelectronic Methods 0.000 claims description 66
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 27
- 238000000151 deposition Methods 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000005304 joining Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201061424906P | 2010-12-20 | 2010-12-20 | |
| US61/424,906 | 2010-12-20 | ||
| PCT/US2011/030871 WO2012087364A1 (en) | 2010-12-20 | 2011-04-01 | Simultaneous wafer bonding and interconnect joining |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014500630A JP2014500630A (ja) | 2014-01-09 |
| JP2014500630A5 true JP2014500630A5 (https=) | 2014-05-15 |
| JP5881734B2 JP5881734B2 (ja) | 2016-03-09 |
Family
ID=46233332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013546103A Active JP5881734B2 (ja) | 2010-12-20 | 2011-04-01 | 同時のウェハ結合及び相互接続接合 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8486758B2 (https=) |
| EP (1) | EP2656383B1 (https=) |
| JP (1) | JP5881734B2 (https=) |
| KR (2) | KR101091551B1 (https=) |
| CN (1) | CN103370784B (https=) |
| TW (1) | TWI406383B (https=) |
| WO (1) | WO2012087364A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9237648B2 (en) | 2013-02-25 | 2016-01-12 | Invensas Corporation | Carrier-less silicon interposer |
| US9691693B2 (en) | 2013-12-04 | 2017-06-27 | Invensas Corporation | Carrier-less silicon interposer using photo patterned polymer as substrate |
| CN104900543B (zh) * | 2014-03-06 | 2018-02-06 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法 |
| US9704841B2 (en) * | 2014-03-26 | 2017-07-11 | United Microelectronics Corp. | Method of packaging stacked dies on wafer using flip-chip bonding |
| CN105023877B (zh) | 2014-04-28 | 2019-12-24 | 联华电子股份有限公司 | 半导体晶片、封装结构与其制作方法 |
| KR102258743B1 (ko) | 2014-04-30 | 2021-06-02 | 삼성전자주식회사 | 반도체 패키지의 제조 방법, 이에 의해 형성된 반도체 패키지 및 이를 포함하는 반도체 장치 |
| US9437536B1 (en) | 2015-05-08 | 2016-09-06 | Invensas Corporation | Reversed build-up substrate for 2.5D |
| TWI645479B (zh) | 2015-05-13 | 2018-12-21 | 財團法人工業技術研究院 | 貼合結構、其製造方法及晶粒結構 |
| US10211160B2 (en) | 2015-09-08 | 2019-02-19 | Invensas Corporation | Microelectronic assembly with redistribution structure formed on carrier |
| US9666560B1 (en) | 2015-11-25 | 2017-05-30 | Invensas Corporation | Multi-chip microelectronic assembly with built-up fine-patterned circuit structure |
| US9691747B1 (en) | 2015-12-21 | 2017-06-27 | International Business Machines Corporation | Manufacture of wafer—panel die package assembly technology |
| TWI607587B (zh) * | 2016-09-13 | 2017-12-01 | 台灣琭旦股份有限公司 | 固晶穩固製程 |
| US10283445B2 (en) | 2016-10-26 | 2019-05-07 | Invensas Corporation | Bonding of laminates with electrical interconnects |
| CN111115555B (zh) * | 2019-12-20 | 2023-08-29 | 北京航天控制仪器研究所 | 一种用于mems晶圆级共晶键合封装的硅槽结构及制备方法 |
| CN111179612B (zh) * | 2019-12-27 | 2021-09-07 | 讯飞智元信息科技有限公司 | 交叉口车道功能生成方法、装置和设备 |
| US11270963B2 (en) | 2020-01-14 | 2022-03-08 | Sandisk Technologies Llc | Bonding pads including interfacial electromigration barrier layers and methods of making the same |
| US20210296281A1 (en) * | 2020-03-20 | 2021-09-23 | Integrated Silicon Solution Inc. | Wafer-bonding structure and method of forming thereof |
| CN112103261A (zh) * | 2020-11-10 | 2020-12-18 | 浙江里阳半导体有限公司 | 半导体封装结构及其制作方法 |
| US12598962B2 (en) | 2023-03-14 | 2026-04-07 | Adeia Semiconductor Bonding Technologies Inc. | System and method for bonding transparent conductor substrates |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5965457A (ja) * | 1982-10-05 | 1984-04-13 | Mitsubishi Electric Corp | 半導体装置 |
| JPH07112041B2 (ja) * | 1986-12-03 | 1995-11-29 | シャープ株式会社 | 半導体装置の製造方法 |
| JPH0750316A (ja) | 1993-08-09 | 1995-02-21 | Fujitsu Ltd | 電子回路のフリップチップ接合方法 |
| FR2718571B1 (fr) * | 1994-04-08 | 1996-05-15 | Thomson Csf | Composant hybride semiconducteur. |
| WO1997011492A1 (en) | 1995-09-20 | 1997-03-27 | Hitachi, Ltd. | Semiconductor device and its manufacture |
| KR100438256B1 (ko) * | 1995-12-18 | 2004-08-25 | 마츠시타 덴끼 산교 가부시키가이샤 | 반도체장치 및 그 제조방법 |
| JP2007201512A (ja) * | 1996-12-02 | 2007-08-09 | Toshiba Corp | マルチチップ半導体装置、マルチチップ半導体装置用チップおよびその形成方法 |
| JPH11112150A (ja) | 1997-09-30 | 1999-04-23 | Hokuriku Electric Ind Co Ltd | 多層基板とその製造方法 |
| JP3420076B2 (ja) * | 1998-08-31 | 2003-06-23 | 新光電気工業株式会社 | フリップチップ実装基板の製造方法及びフリップチップ実装基板及びフリップチップ実装構造 |
| JP3342845B2 (ja) * | 1999-02-26 | 2002-11-11 | ローム株式会社 | 半導体装置 |
| JP4009380B2 (ja) * | 1999-02-18 | 2007-11-14 | ローム株式会社 | 半導体チップの製造方法 |
| KR100333384B1 (ko) * | 1999-06-28 | 2002-04-18 | 박종섭 | 칩 사이즈 스택 패키지 및 그의 제조방법 |
| KR100396551B1 (ko) | 2001-02-03 | 2003-09-03 | 삼성전자주식회사 | 웨이퍼 레벨 허메틱 실링 방법 |
| US6975016B2 (en) * | 2002-02-06 | 2005-12-13 | Intel Corporation | Wafer bonding using a flexible bladder press and thinned wafers for three-dimensional (3D) wafer-to-wafer vertical stack integration, and application thereof |
| DE10215654A1 (de) | 2002-04-09 | 2003-11-06 | Infineon Technologies Ag | Elektronisches Bauteil mit mindestens einem Halbleiterchip und Flip-Chip-Kontakten sowie Verfahren zu seiner Herstellung |
| US6962835B2 (en) | 2003-02-07 | 2005-11-08 | Ziptronix, Inc. | Method for room temperature metal direct bonding |
| US20050110131A1 (en) | 2003-11-24 | 2005-05-26 | Lee Kevin J. | Vertical wafer stacking using an interposer |
| KR20060011483A (ko) | 2004-07-30 | 2006-02-03 | 기아자동차주식회사 | 차량의 쿨박스 동작 장치 및 방법 |
| KR100601483B1 (ko) | 2004-12-06 | 2006-07-18 | 삼성전기주식회사 | 비아포스트에 의해 층간 전도성이 부여된 병렬적 다층인쇄회로기판 및 그 제조 방법 |
| US20060292823A1 (en) * | 2005-06-28 | 2006-12-28 | Shriram Ramanathan | Method and apparatus for bonding wafers |
| US20070080441A1 (en) | 2005-08-18 | 2007-04-12 | Scott Kirkman | Thermal expansion compensation graded IC package |
| JP2008098257A (ja) | 2006-10-09 | 2008-04-24 | Sumitomo Electric Ind Ltd | 接続構造 |
| JP4345808B2 (ja) | 2006-12-15 | 2009-10-14 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
| EP2135280A2 (en) | 2007-03-05 | 2009-12-23 | Tessera, Inc. | Chips having rear contacts connected by through vias to front contacts |
| SG152101A1 (en) | 2007-11-06 | 2009-05-29 | Agency Science Tech & Res | An interconnect structure and a method of fabricating the same |
| US7872357B2 (en) * | 2008-03-05 | 2011-01-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Protection for bonding pads and methods of formation |
| KR20090106828A (ko) | 2008-04-07 | 2009-10-12 | 삼성전자주식회사 | 웨이퍼 본딩 방법 및 그 방법에 의해 본딩된 웨이퍼 구조체 |
| KR100945800B1 (ko) | 2008-12-09 | 2010-03-05 | 김영혜 | 이종 접합 웨이퍼 제조방법 |
| US8153905B2 (en) * | 2009-02-27 | 2012-04-10 | Ibiden Co., Ltd. | Method for manufacturing printed wiring board and printed wiring board |
| JP5697898B2 (ja) * | 2009-10-09 | 2015-04-08 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体装置及びその製造方法 |
| US8796135B2 (en) | 2010-07-23 | 2014-08-05 | Tessera, Inc. | Microelectronic elements with rear contacts connected with via first or via middle structures |
| US8791575B2 (en) | 2010-07-23 | 2014-07-29 | Tessera, Inc. | Microelectronic elements having metallic pads overlying vias |
-
2011
- 2011-03-31 US US13/076,969 patent/US8486758B2/en active Active
- 2011-04-01 JP JP2013546103A patent/JP5881734B2/ja active Active
- 2011-04-01 WO PCT/US2011/030871 patent/WO2012087364A1/en not_active Ceased
- 2011-04-01 CN CN201180067909.3A patent/CN103370784B/zh active Active
- 2011-04-01 EP EP11713628.3A patent/EP2656383B1/en active Active
- 2011-04-07 KR KR1020110032044A patent/KR101091551B1/ko not_active Expired - Fee Related
- 2011-06-24 KR KR1020110061826A patent/KR20120069515A/ko not_active Withdrawn
- 2011-12-20 TW TW100147552A patent/TWI406383B/zh active
-
2013
- 2013-07-11 US US13/939,725 patent/US8709913B2/en active Active
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