JP2014209581A - ウェットエッチング装置 - Google Patents
ウェットエッチング装置 Download PDFInfo
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- JP2014209581A JP2014209581A JP2014045275A JP2014045275A JP2014209581A JP 2014209581 A JP2014209581 A JP 2014209581A JP 2014045275 A JP2014045275 A JP 2014045275A JP 2014045275 A JP2014045275 A JP 2014045275A JP 2014209581 A JP2014209581 A JP 2014209581A
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- phosphoric acid
- aqueous solution
- acid aqueous
- silica
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- 238000001039 wet etching Methods 0.000 title claims abstract description 43
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 300
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 200
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 150
- 239000007864 aqueous solution Substances 0.000 claims abstract description 137
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000000654 additive Substances 0.000 claims abstract description 54
- 230000000996 additive effect Effects 0.000 claims abstract description 54
- 239000000243 solution Substances 0.000 claims abstract description 32
- 150000004767 nitrides Chemical class 0.000 claims abstract description 14
- 238000003860 storage Methods 0.000 claims description 30
- 238000001514 detection method Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 239000008119 colloidal silica Substances 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 19
- 238000011084 recovery Methods 0.000 claims description 17
- 239000003795 chemical substances by application Substances 0.000 abstract 4
- 239000010408 film Substances 0.000 description 45
- 238000005530 etching Methods 0.000 description 44
- 239000007788 liquid Substances 0.000 description 34
- 229910004298 SiO 2 Inorganic materials 0.000 description 15
- 239000000126 substance Substances 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 238000007599 discharging Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
Abstract
Description
Claims (7)
- 少なくとも窒化膜と酸化膜とが形成された基板を処理するウェットエッチング装置において、
リン酸水溶液を貯留する貯留部と、
シリカ添加剤を貯留する添加剤貯留部と、
前記貯留部に貯留されたリン酸水溶液のシリカ濃度を検出する濃度検出部と、
この濃度検出部により検出されたリン酸水溶液のシリカ濃度が所定値より低い場合に、前記添加剤貯留部から前記貯留部へシリカ添加剤を供給する添加剤供給部と、
前記貯留部に貯留されたリン酸水溶液により基板を処理する処理部とを備えることを特徴とするウェットエッチング装置。 - 前記処理部から前記リン酸水溶液を回収して、前記貯留部へ戻す回収部をさらに備えることを特徴とする請求項1記載のウェットエッチング装置。
- 前記濃度検出部により検出された前記リン酸水溶液のシリカ濃度が予め設定した所定の濃度であることを条件に、前記貯留部から前記処理部に前記リン酸水溶液を供給することを特徴とする請求項1記載のウエットエッチング装置。
- 前記シリカ添加剤は、コロイダルシリカであることを特徴とする請求項1〜3のいずれかに記載のウエットエッチング装置。
- 前記添加剤供給部は、前記添加剤貯留部と前記貯留部との間に副貯留部を有し、
前記副貯留部は、リン酸水溶液を収容するリン酸水溶液供給部からリン酸水溶液を供給されることを特徴とする請求項1に記載のウェットエッチング装置。 - 前記貯留部に貯留された前記リン酸水溶液の温度を検出する温度検出部を有し、
この温度検出部により検出された前記リン酸水溶液の温度が予め設定した所定の温度であることを条件に、前記貯留部から前記処理部に前記リン酸水溶液を供給することを特徴とする請求項3に記載のウェットエッチング装置。 - 前記貯留部には、内部のリン酸水溶液を循環しつつ、加熱する循環部が設けられていることを特徴とする請求項2に記載のウェットエッチング装置。
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014045275A JP6302708B2 (ja) | 2013-03-29 | 2014-03-07 | ウェットエッチング装置 |
TW106106835A TWI692024B (zh) | 2013-03-29 | 2014-03-21 | 濕式蝕刻裝置 |
TW103110681A TWI660419B (zh) | 2013-03-29 | 2014-03-21 | Wet etching device |
TW110118487A TWI810572B (zh) | 2013-03-29 | 2014-03-21 | 濕式蝕刻裝置 |
TW109109663A TWI739355B (zh) | 2013-03-29 | 2014-03-21 | 濕式蝕刻裝置 |
KR1020140035547A KR101596119B1 (ko) | 2013-03-29 | 2014-03-26 | 웨트 에칭 장치 |
CN201710207544.9A CN107452649B (zh) | 2013-03-29 | 2014-03-28 | 湿式蚀刻装置 |
US14/228,515 US20140290859A1 (en) | 2013-03-29 | 2014-03-28 | Wet etching apparatus |
CN201410218651.8A CN104078391B (zh) | 2013-03-29 | 2014-03-28 | 湿式蚀刻装置 |
KR1020150186442A KR101687924B1 (ko) | 2013-03-29 | 2015-12-24 | 웨트 에칭 장치 |
KR1020160167523A KR102062749B1 (ko) | 2013-03-29 | 2016-12-09 | 웨트 에칭 장치 |
KR1020190169753A KR102253286B1 (ko) | 2013-03-29 | 2019-12-18 | 웨트 에칭 장치 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013073721 | 2013-03-29 | ||
JP2013073721 | 2013-03-29 | ||
JP2014045275A JP6302708B2 (ja) | 2013-03-29 | 2014-03-07 | ウェットエッチング装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018038606A Division JP6529625B2 (ja) | 2013-03-29 | 2018-03-05 | ウェットエッチング装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014209581A true JP2014209581A (ja) | 2014-11-06 |
JP2014209581A5 JP2014209581A5 (ja) | 2017-05-25 |
JP6302708B2 JP6302708B2 (ja) | 2018-03-28 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014045275A Active JP6302708B2 (ja) | 2013-03-29 | 2014-03-07 | ウェットエッチング装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140290859A1 (ja) |
JP (1) | JP6302708B2 (ja) |
KR (4) | KR101596119B1 (ja) |
CN (2) | CN107452649B (ja) |
TW (4) | TWI810572B (ja) |
Cited By (7)
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JP2018050001A (ja) * | 2016-09-23 | 2018-03-29 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
JP2018182228A (ja) * | 2017-04-20 | 2018-11-15 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
US10147619B2 (en) | 2015-08-27 | 2018-12-04 | Toshiba Memory Corporation | Substrate treatment apparatus, substrate treatment method, and etchant |
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JP2022097363A (ja) * | 2020-12-18 | 2022-06-30 | サムス カンパニー リミテッド | 処理液供給装置及び処理液供給方法 |
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KR102253286B1 (ko) | 2021-05-20 |
KR20160006142A (ko) | 2016-01-18 |
TWI692024B (zh) | 2020-04-21 |
TW201448020A (zh) | 2014-12-16 |
JP6302708B2 (ja) | 2018-03-28 |
TWI810572B (zh) | 2023-08-01 |
US20140290859A1 (en) | 2014-10-02 |
TWI739355B (zh) | 2021-09-11 |
CN104078391B (zh) | 2017-09-22 |
KR101596119B1 (ko) | 2016-02-19 |
CN104078391A (zh) | 2014-10-01 |
KR20190142305A (ko) | 2019-12-26 |
TW202135158A (zh) | 2021-09-16 |
KR20140118868A (ko) | 2014-10-08 |
TW201724250A (zh) | 2017-07-01 |
CN107452649A (zh) | 2017-12-08 |
TW202029329A (zh) | 2020-08-01 |
TWI660419B (zh) | 2019-05-21 |
KR102062749B1 (ko) | 2020-01-06 |
KR20160147239A (ko) | 2016-12-22 |
CN107452649B (zh) | 2020-10-20 |
KR101687924B1 (ko) | 2016-12-19 |
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