JP2014062032A - 圧電材料、圧電素子、および電子機器 - Google Patents
圧電材料、圧電素子、および電子機器 Download PDFInfo
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- JP2014062032A JP2014062032A JP2013165346A JP2013165346A JP2014062032A JP 2014062032 A JP2014062032 A JP 2014062032A JP 2013165346 A JP2013165346 A JP 2013165346A JP 2013165346 A JP2013165346 A JP 2013165346A JP 2014062032 A JP2014062032 A JP 2014062032A
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- piezoelectric
- piezoelectric material
- piezoelectric element
- mol
- electrode
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- 239000000463 material Substances 0.000 title claims abstract description 156
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 42
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 39
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 39
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 29
- 239000007788 liquid Substances 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 48
- 239000000428 dust Substances 0.000 claims description 43
- 238000005245 sintering Methods 0.000 claims description 35
- 239000000919 ceramic Substances 0.000 claims description 30
- 238000003384 imaging method Methods 0.000 claims description 29
- 230000003287 optical effect Effects 0.000 claims description 28
- 239000013078 crystal Substances 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000002002 slurry Substances 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 229910052788 barium Inorganic materials 0.000 claims description 7
- 150000002736 metal compounds Chemical class 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052700 potassium Inorganic materials 0.000 abstract description 6
- 239000011591 potassium Substances 0.000 abstract description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 64
- 239000011572 manganese Substances 0.000 description 47
- 230000010287 polarization Effects 0.000 description 32
- 239000000843 powder Substances 0.000 description 30
- 239000010949 copper Substances 0.000 description 29
- 239000010955 niobium Substances 0.000 description 24
- 239000011734 sodium Substances 0.000 description 22
- 230000005684 electric field Effects 0.000 description 20
- 239000010936 titanium Substances 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 19
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000002994 raw material Substances 0.000 description 17
- 239000002245 particle Substances 0.000 description 16
- 230000007704 transition Effects 0.000 description 15
- 239000000203 mixture Substances 0.000 description 13
- 230000008878 coupling Effects 0.000 description 12
- 238000010168 coupling process Methods 0.000 description 12
- 238000005859 coupling reaction Methods 0.000 description 12
- 239000011230 binding agent Substances 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 10
- 230000007547 defect Effects 0.000 description 10
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 10
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 10
- UYLYBEXRJGPQSH-UHFFFAOYSA-N sodium;oxido(dioxo)niobium Chemical compound [Na+].[O-][Nb](=O)=O UYLYBEXRJGPQSH-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910002113 barium titanate Inorganic materials 0.000 description 7
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000002269 spontaneous effect Effects 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 230000011514 reflex Effects 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000001354 calcination Methods 0.000 description 4
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(i) oxide Chemical compound [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 4
- 238000007606 doctor blade method Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000004014 plasticizer Substances 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000000224 chemical solution deposition Methods 0.000 description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000000462 isostatic pressing Methods 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 229910000480 nickel oxide Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 239000010944 silver (metal) Substances 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- CYJRNFFLTBEQSQ-UHFFFAOYSA-N 8-(3-methyl-1-benzothiophen-5-yl)-N-(4-methylsulfonylpyridin-3-yl)quinoxalin-6-amine Chemical compound CS(=O)(=O)C1=C(C=NC=C1)NC=1C=C2N=CC=NC2=C(C=1)C=1C=CC2=C(C(=CS2)C)C=1 CYJRNFFLTBEQSQ-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000005621 ferroelectricity Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000001513 hot isostatic pressing Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- XGVXKJKTISMIOW-ZDUSSCGKSA-N simurosertib Chemical compound N1N=CC(C=2SC=3C(=O)NC(=NC=3C=2)[C@H]2N3CCC(CC3)C2)=C1C XGVXKJKTISMIOW-ZDUSSCGKSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003826 uniaxial pressing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000012856 weighed raw material Substances 0.000 description 2
- VCGRFBXVSFAGGA-UHFFFAOYSA-N (1,1-dioxo-1,4-thiazinan-4-yl)-[6-[[3-(4-fluorophenyl)-5-methyl-1,2-oxazol-4-yl]methoxy]pyridin-3-yl]methanone Chemical compound CC=1ON=C(C=2C=CC(F)=CC=2)C=1COC(N=C1)=CC=C1C(=O)N1CCS(=O)(=O)CC1 VCGRFBXVSFAGGA-UHFFFAOYSA-N 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920001651 Cyanoacrylate Polymers 0.000 description 1
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- MWCLLHOVUTZFKS-UHFFFAOYSA-N Methyl cyanoacrylate Chemical compound COC(=O)C(=C)C#N MWCLLHOVUTZFKS-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004430 X-ray Raman scattering Methods 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 238000003916 acid precipitation Methods 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 229910001422 barium ion Inorganic materials 0.000 description 1
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical class [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229940116318 copper carbonate Drugs 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- GEZOTWYUIKXWOA-UHFFFAOYSA-L copper;carbonate Chemical compound [Cu+2].[O-]C([O-])=O GEZOTWYUIKXWOA-UHFFFAOYSA-L 0.000 description 1
- QYCVHILLJSYYBD-UHFFFAOYSA-L copper;oxalate Chemical compound [Cu+2].[O-]C(=O)C([O-])=O QYCVHILLJSYYBD-UHFFFAOYSA-L 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MIMDHDXOBDPUQW-UHFFFAOYSA-N dioctyl decanedioate Chemical compound CCCCCCCCOC(=O)CCCCCCCCC(=O)OCCCCCCCC MIMDHDXOBDPUQW-UHFFFAOYSA-N 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 229940071125 manganese acetate Drugs 0.000 description 1
- 229940093474 manganese carbonate Drugs 0.000 description 1
- 239000011656 manganese carbonate Substances 0.000 description 1
- 235000006748 manganese carbonate Nutrition 0.000 description 1
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- RGVLTEMOWXGQOS-UHFFFAOYSA-L manganese(2+);oxalate Chemical compound [Mn+2].[O-]C(=O)C([O-])=O RGVLTEMOWXGQOS-UHFFFAOYSA-L 0.000 description 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000009768 microwave sintering Methods 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- DOLZKNFSRCEOFV-UHFFFAOYSA-L nickel(2+);oxalate Chemical compound [Ni+2].[O-]C(=O)C([O-])=O DOLZKNFSRCEOFV-UHFFFAOYSA-L 0.000 description 1
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 description 1
- ZULUUIKRFGGGTL-UHFFFAOYSA-L nickel(ii) carbonate Chemical compound [Ni+2].[O-]C([O-])=O ZULUUIKRFGGGTL-UHFFFAOYSA-L 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
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Abstract
【解決手段】 下記一般式(1)で表わされるペロブスカイト型金属酸化物を含む主成分と、MnおよびNiから選ばれる少なくとも1種の元素を含む副成分とからなる圧電材料であって、前記Niの含有量が前記ペロブスカイト型金属酸化物1molに対して0mol以上0.05mol以下であり、前記Mnの含有量が前記ペロブスカイト型金属酸化物1molに対して0mol以上0.005mol以下であることを特徴とする圧電材料。一般式(1)(NaxBa1−y)(NbyTi1−y)O3(式中、0.80≦x≦0.94、0.83≦y≦0.94)
【選択図】 図15
Description
また上記課題を解決するための更なる手段は、圧電材料からなる圧電セラミックスにおいて、前記圧電材料は上述の圧電材料を主成分とし、前記圧電セラミックスを構成する結晶粒の内部にMnが存在していることを特徴とする圧電セラミックスである。
本発明において、ペロブスカイト型金属酸化物とは、岩波理化学辞典 第5版(岩波書店 1998年2月20日発行)に記載されているような、理想的には立方晶構造であるペロブスカイト型構造(ペロフスカイト構造とも言う)を持つ金属酸化物を指す。ペロブスカイト型構造を持つ金属酸化物は一般にABO3の化学式で表現される。ペロブスカイト型金属酸化物において、元素A、Bは各々イオンの形でAサイト、Bサイトと呼ばれる単位格子の特定の位置を占める。例えば、立方晶系の単位格子であれば、A元素は立方体の頂点、B元素は体心に位置する。O元素は酸素の陰イオンとして立方体の面心位置を占める。
ただし、前記一般式(2)において各パラメータの取りうる値は、0.80≦x≦0.94、0.83≦y≦0.94、0≦z≦0.05、0≦v≦0.01、0≦w≦0.005、0<z+wである。
(1) 抵抗率が増加。
(2) 共振時、インピーダンスの位相角度が増加。
(3) 分極−電界ヒステリシス測定で評価される残留分極値が増加。もしくは抗電界が減少。
(4) 電気機械結合係数が増加。
(5) 電気機械品質係数が低下。
(6) ヤング率が低下。
(7) 誘電正接(tanδ)が低下。
(1) 電気機械結合係数もしくは圧電定数が減少。
(2) 電気機械品質係数が増加。
(3) ヤング率が増加。
(4) 内部電界を形成。
(5) 抵抗率が増加。
本発明に係る液体吐出ヘッドは、前記圧電素子または前記積層圧電素子を配した振動部を備えた液室と、前記液室と連通する吐出口を少なくとも有することを特徴とする。本発明の液体吐出ヘッドによって吐出する液体は流動体であれば特に限定されず、水、インク、燃料などの水系液体や非水系液体を吐出することができる。
次に、本発明の液体吐出装置について説明する。本発明の液体吐出装置は、記録媒体の搬送部と前記液体吐出ヘッドを備えたものである。
本発明に係る超音波モータは、前記圧電素子または前記積層圧電素子を配した振動体と、前記振動体と接触する移動体とを少なくとも有することを特徴とする。図6は、本発明の超音波モータの構成の一実施態様を示す概略図である。本発明の圧電素子が単板からなる超音波モータを、図6(a)に示す。超音波モータは、振動子201、振動子201の摺動面に不図示の加圧バネによる加圧力で接触しているロータ202、ロータ202と一体的に設けられた出力軸203を有する。前記振動子201は、金属の弾性体リング2011、本発明の圧電素子2012、圧電素子2012を弾性体リング2011に接着する有機系接着剤2013(エポキシ系、シアノアクリレート系など)で構成される。本発明の圧電素子2012は、不図示の第一の電極と第二の電極によって挟まれた圧電材料で構成される。本発明の圧電素子に位相がπ/4の奇数倍異なる二相の交番電圧を印加すると、振動子201に屈曲進行波が発生し、振動子201の摺動面上の各点は楕円運動をする。この振動子201の摺動面にロータ202が圧接されていると、ロータ202は振動子201から摩擦力を受け、屈曲進行波とは逆の方向へ回転する。不図示の被駆動体は、出力軸203と接合されており、ロータ202の回転力で駆動される。圧電材料に電圧を印加すると、圧電横効果によって圧電材料は伸縮する。金属などの弾性体が圧電素子に接合している場合、弾性体は圧電材料の伸縮によって曲げられる。ここで説明された種類の超音波モータは、この原理を利用したものである。次に、積層構造を有した圧電素子を含む超音波モータを図6(b)に例示する。振動子204は、筒状の金属弾性体2041に挟まれた積層圧電素子2042よりなる。積層圧電素子2042は、不図示の複数の積層された圧電材料により構成される素子であり、積層外面に第一の電極と第二の電極、積層内面に内部電極を有する。金属弾性体2041はボルトによって締結され、圧電素子2042を挟持固定し、振動子204となる。圧電素子2042に位相の異なる交番電圧を印加することにより、振動子204は互いに直交する2つの振動を励起する。この二つの振動は合成され、振動子204の先端部を駆動するための円振動を形成する。なお、振動子204の上部にはくびれた周溝が形成され、駆動のための振動の変位を大きくしている。ロータ205は、加圧用のバネ206により振動子204と加圧接触し、駆動のための摩擦力を得る。ロータ205はベアリングによって回転可能に支持されている。
次に、本発明の光学機器について説明する。本発明の光学機器は、駆動部に前記超音波モータを備えたことを特徴とする。
粒子、粉体、液滴の搬送、除去等で利用される振動装置は、電子機器等で広く使用されている。
次に、本発明の撮像装置について説明する。本発明の撮像装置は、前記塵埃除去装置と撮像素子ユニットとを少なくとも有する撮像装置であって、前記塵埃除去装置の振動板を前記撮像ユニットの受光面側に設けた事を特徴とする。図12および図13は本発明の撮像装置の好適な実施形態の一例であるデジタル一眼レフカメラを示す図である。
次に、本発明の電子機器について説明する。本発明の電子機器は、前記圧電素子または前記積層圧電素子を備えた圧電音響部品を配したことを特徴とする。圧電音響部品にはスピーカ、ブザー、マイク、表面弾性波(SAW)素子が含まれる。
表2、表3に代表的試料の特性を示す。
実施例1〜4は、前記一般式(1)で表わされるペロブスカイト型金属酸化物1molに対して、Niを0.002〜0.01mol添加した試料である。Niを添加していない比較例1に比べて、実施例1〜4の順に抵抗率が高くなった。また、Niの添加によって電気機械結合係数が増加し、圧電定数d31もしくはd33が増加した。加えて、ヤング率が高くなった。一方、電気機械品質係数は低下した。実施例9、10ではyの値を変えることでキュリー温度と逐次相転移温度を調整することができた。加えて、電気機械品質係数の向上、あるいは電気機械結合係数の向上と圧電定数d31もしくはd33の向上が得られた。
実施例11〜13は、前記一般式(1)で表わされるペロブスカイト型金属酸化物1molに対して、Mnを0.001〜0.005mol添加した試料である。(本実施例では前記仮焼工程を省略しているが、仮焼工程を実施しても同様の結果を得られる。)Mnを添加していない比較例1に比べて、実施例11〜13の試料の抵抗率は高かった。また、Mnの添加によって電気機械結合係数が増加し、圧電定数d31もしくはd33が増加した。加えて、ヤング率が高くなった。一方、Mnの添加量にしたがって実施例11〜13の試料のキュリー温度は降下している。これは、Mnの少なくとも一部は結晶の内部に固溶しているためであると考えられる。ここで、実施例13では実施例11および12に対して抵抗率が低くなっているため、Niを添加しない場合は前記一般式(1)で表わされるペロブスカイト型金属酸化物1molに対して、Mnを0.005mol未満添加することが好ましい。
実施例5、6は、前記一般式(1)で表わされるペロブスカイト型金属酸化物1molに対してNiを0.005mol添加した上に、Cuを0.002mol、或いは0.005mol添加した試料である。Cuを添加していない実施例2と比較して電気機械品質係数が向上した。
実施例7、8は、前記一般式(1)で表わされるペロブスカイト型金属酸化物1molに対してNiを0.005mol添加した上に、Mnを0.002mol、或いは0.005mol添加した試料である。Mnを添加していない実施例2と比較して電気機械品質係数が向上した。
実施例17は、前記一般式(1)で表わされるペロブスカイト型金属酸化物1molに対してMnを0.0001mol添加した上に、Cuを0.0001mol添加した試料である。MnおよびCuを添加していない実施例1と比較して抵抗率および電気機械品質係数が向上した。
実施例2に相当する原料を以下に述べる要領で秤量した。
ニオブ酸ナトリウム、チタン酸バリウム、酸化ニッケル粉末を、Na、Nb、Ti、Ba、Niが表1の実施例3記載の組成になるよう秤量した。秤量した原料粉末をボールミルで一晩混合した。これらの秤量粉に対して、3重量部となるPVBバインダーを加えて混合した。この混合粉を用いて、ドクターブレード法によりシート形成して厚み50μmのグリーンシートを得た。
実施例5の圧電素子を用いて、図3に示される液体吐出ヘッドを作製した。入力した電気信号に追随したインクの吐出が確認された。
実施例100の液体吐出ヘッドを用いて、図4に示される液体吐出装置を作製した。入力した電気信号に追随したインクの吐出が記録媒体上に確認された。
実施例5の圧電素子を用いて、図6(a)に示される超音波モータを作製した。交流電圧の印加に応じたモータの回転が確認された。
実施例102の超音波モータを用いて、図7に示される光学機器を作製した。交流電圧の印加に応じたオートフォーカス動作が確認された。
実施例5の圧電素子を用いて、図9に示される塵埃除去装置を作製した。プラスチック製ビーズを散布し、交流電圧を印加したところ、良好な塵埃除去率が確認された。
実施例104の塵埃除去装置を用いて、図12に示される撮像装置を作製した。動作させたところ、撮像ユニットの表面の塵を良好に除去し、塵欠陥の無い画像が得られた。
実施例90の積層圧電素子を用いて、図3に示される液体吐出ヘッドを作製した。入力した電気信号に追随したインクの吐出が確認された。
実施例106の液体吐出ヘッドを用いて、図4に示される液体吐出装置を作製した。入力した電気信号に追随したインクの吐出が記録媒体上に確認された。
実施例90の積層圧電素子を用いて、図6(b)に示される超音波モータを作製した。交番電圧の印加に応じたモータの回転が確認された。
実施例108の超音波モータを用いて、図7に示される光学機器を作製した。交流電圧の印加に応じたオートフォーカス動作が確認された。
実施例90乃至91の積層圧電素子を用いて、図9に示される塵埃除去装置を作製した。プラスチック製ビーズを散布し、交流電圧を印加したところ、良好な塵埃除去率が確認された。
実施例110の塵埃除去装置を用いて、図12に示される撮像装置を作製した。動作させたところ、撮像ユニットの表面の塵を良好に除去し、塵欠陥の無い画像が得られた。
実施例90乃至91の積層圧電素子を用いて、図14に示される電子機器を作製した。交番電圧の印加に応じたスピーカ動作が確認された。
2 圧電材料部
3 第二の電極
101 圧電素子
102 個別液室
103 振動板
104 液室隔壁
105 吐出口
106 連通孔
107 共通液室
108 バッファ層
1011 第一の電極
1012 圧電材料
1013 第二の電極
201 振動子
202 ロータ
203 出力軸
204 振動子
205 ロータ
206 バネ
2011 弾性体リング
2012 圧電素子
2013 有機系接着剤
2041 金属弾性体
2042 積層圧電素子
310 塵埃除去装置
330 圧電素子
320 振動板
330 圧電素子
331 圧電材料
332 第1の電極
333 第2の電極
336 第1の電極面
337 第2の電極面
310 塵埃除去装置
320 振動板
330 圧電素子
51 第一の電極
53 第二の電極
54 圧電材料層
55 内部電極
56 積層圧電素子
501 第一の電極
503 第二の電極
504 圧電材料層
505a 内部電極
505b 内部電極
506a 外部電極
506b 外部電極
601 カメラ本体
602 マウント部
605 ミラーボックス
606 メインミラー
200 シャッタユニット
300 本体シャーシ
400 撮像ユニット
701 前群レンズ
702 後群レンズ(フォーカスレンズ)
711 着脱マウント
712 固定筒
713 直進案内筒
714 前群鏡筒
715 カム環
716 後群鏡筒
717 カムローラ
718 軸ビス
719 ローラ
720 回転伝達環
722 コロ
724 マニュアルフォーカス環
725 超音波モータ
726 波ワッシャ
727 ボールレース
728 フォーカスキー
729 接合部材
732 ワッシャ
733 低摩擦シート
881 液体吐出装置
882 外装
883 外装
884 外装
885 外装
887 外装
890 回復部
891 記録部
892 キャリッジ
896 装置本体
897 自動給送部
898 排出口
899 搬送部
901 光学装置
908 レリーズボタン
909 ストロボ発光部
912 スピーカ
914 マイク
916 補助光部
931 本体
932 ズームレバー
933 電源ボタン
Claims (18)
- 下記一般式(1)で表わされるペロブスカイト型金属酸化物を含む主成分と、MnおよびNiから選ばれる少なくとも1種の元素を含む副成分とからなる圧電材料であって、前記Niの含有量が前記ペロブスカイト型金属酸化物1molに対して0mol以上0.05mol以下であり、前記Mnの含有量が前記ペロブスカイト型金属酸化物1molに対して0mol以上0.005mol以下であること(但し、Mnの含有量とNiの含有量が同時に0molとなる場合を除く)、を特徴とする圧電材料。
一般式(1)(NaxBa1−y)(NbyTi1−y)O3(式中、0.80≦x≦0.94、0.83≦y≦0.94) - 前記ペロブスカイト型金属酸化物1molに対して、Cuを0.01mol以下含む(0molは除く)ことを特徴とする請求項1に記載の圧電材料。
- 前記一般式(1)において、x<yであることを特徴とする請求項1乃至2に記載の圧電材料。
- 圧電材料からなる圧電セラミックスにおいて、前記圧電材料は請求項1乃至3に記載の圧電材料を主成分とし、前記圧電セラミックスを構成する結晶粒の内部にMnが存在していることを特徴とする圧電セラミックス。
- 圧電材料からなる圧電セラミックスにおいて、前記圧電材料は請求項1乃至3に記載の圧電材料を主成分とし、前記圧電セラミックスを構成する結晶粒の粒界にNiが存在していることを特徴とする圧電セラミックス。
- 第一の電極、圧電材料部および第二の電極を少なくとも有する圧電素子であって、前記圧電材料部を構成する圧電材料が請求項1乃至3のいずれかに記載の圧電材料であることを特徴とする圧電素子。
- 圧電材料層と、内部電極を含む電極とが交互に積層された積層圧電素子であって、前記圧電材料層を構成する圧電材料が請求項1乃至3のいずれかに記載の圧電材料であることを特徴とする積層圧電素子。
- 前記内部電極がAgとPdを含み、前記Agの含有重量M1と前記Pdの含有重量M2との重量比M1/M2が1.5≦M1/M2≦9.0であることを特徴とする請求項7に記載の積層圧電素子。
- 前記内部電極がNiおよびCuの少なくともいずれか1種を含むことを特徴とする請求項7に記載の積層圧電素子。
- 請求項7乃至9のいずれかに記載の積層圧電素子の製造方法であって、少なくともNa、Ba、Nb、TiおよびNiおよびMnから選ばれる少なくとも1種の元素を含んだ金属化合物を分散させてスラリーを得る工程(A)と、前記スラリーから成形体を得る工程(B)と、前記成形体に電極を形成する工程(C)と、前記金属化合物を含む成形体と前記電極とが交互に積層された形成された成形体を焼結して、積層圧電素子を得る工程(D)とを有し、前記工程(D)における焼結温度が1200℃以下であることを特徴とする積層圧電素子の製造方法。
- 請求項6に記載の圧電素子または請求項7乃至9のいずれかに記載の積層圧電素子を配した振動部を備えた液室と、前記液室と連通する吐出口を少なくとも有する液体吐出ヘッド。
- 記録媒体の搬送部と請求項11に記載の液体吐出ヘッドを備えた液体吐出装置。
- 請求項6に記載の圧電素子または請求項7乃至9のいずれかに記載の積層圧電素子を配した振動体と、前記振動体と接触する移動体とを少なくとも有する超音波モータ。
- 駆動部に請求項13に記載の超音波モータを備えた光学機器。
- 請求項6に記載の圧電素子または請求項7乃至9のいずれかに記載の積層圧電素子を振動板に配した振動体を有する振動装置。
- 請求項15に記載の振動装置を振動部に備えた塵埃除去装置。
- 請求項16に記載の塵埃除去装置と撮像素子ユニットとを少なくとも有する撮像装置であって、前記塵埃除去装置の振動板を受光面側に設けたことを特徴とする撮像装置。
- 請求項6に記載の圧電素子または請求項7乃至9のいずれかに記載の積層圧電素子を備えた圧電音響部品を配した電子機器。
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EP2867183B1 (en) | 2018-06-06 |
KR101899746B1 (ko) | 2018-09-17 |
JP6249669B2 (ja) | 2017-12-20 |
US9496484B2 (en) | 2016-11-15 |
TWI540115B (zh) | 2016-07-01 |
US20150221856A1 (en) | 2015-08-06 |
US20180204999A1 (en) | 2018-07-19 |
CN104603083B (zh) | 2016-08-31 |
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CN104603083A (zh) | 2015-05-06 |
US10516093B2 (en) | 2019-12-24 |
TW201408621A (zh) | 2014-03-01 |
WO2014034694A1 (en) | 2014-03-06 |
KR20150046201A (ko) | 2015-04-29 |
KR20170117209A (ko) | 2017-10-20 |
US20170018701A1 (en) | 2017-01-19 |
EP2867183A1 (en) | 2015-05-06 |
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US9960343B2 (en) | 2018-05-01 |
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