JP2014057065A - Tsv構造を備える集積回路素子及びその製造方法 - Google Patents
Tsv構造を備える集積回路素子及びその製造方法 Download PDFInfo
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- JP2014057065A JP2014057065A JP2013187057A JP2013187057A JP2014057065A JP 2014057065 A JP2014057065 A JP 2014057065A JP 2013187057 A JP2013187057 A JP 2013187057A JP 2013187057 A JP2013187057 A JP 2013187057A JP 2014057065 A JP2014057065 A JP 2014057065A
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- Prior art keywords
- conductive
- barrier film
- integrated circuit
- film
- conductive barrier
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 239000010408 film Substances 0.000 claims abstract description 376
- 230000004888 barrier function Effects 0.000 claims abstract description 207
- 239000004065 semiconductor Substances 0.000 claims abstract description 128
- 239000000758 substrate Substances 0.000 claims abstract description 126
- 239000010409 thin film Substances 0.000 claims abstract description 76
- 230000000149 penetrating effect Effects 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 149
- 229910052751 metal Inorganic materials 0.000 claims description 140
- 239000002184 metal Substances 0.000 claims description 140
- 238000000034 method Methods 0.000 claims description 86
- 239000011229 interlayer Substances 0.000 claims description 60
- 229910000679 solder Inorganic materials 0.000 claims description 11
- 238000009413 insulation Methods 0.000 abstract description 3
- 150000001455 metallic ions Chemical class 0.000 abstract 1
- 238000005498 polishing Methods 0.000 description 28
- 239000000463 material Substances 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 238000000231 atomic layer deposition Methods 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 229910021645 metal ion Inorganic materials 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- -1 CuMg Inorganic materials 0.000 description 2
- 229910003336 CuNi Inorganic materials 0.000 description 2
- 229910016347 CuSn Inorganic materials 0.000 description 2
- 229910002535 CuZn Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- VKJLWXGJGDEGSO-UHFFFAOYSA-N barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Ba+2] VKJLWXGJGDEGSO-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910020654 PbScTaO Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- XWCMFHPRATWWFO-UHFFFAOYSA-N [O-2].[Ta+5].[Sc+3].[O-2].[O-2].[O-2] Chemical compound [O-2].[Ta+5].[Sc+3].[O-2].[O-2].[O-2] XWCMFHPRATWWFO-UHFFFAOYSA-N 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- JMOHEPRYPIIZQU-UHFFFAOYSA-N oxygen(2-);tantalum(2+) Chemical compound [O-2].[Ta+2] JMOHEPRYPIIZQU-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- UVGLBOPDEUYYCS-UHFFFAOYSA-N silicon zirconium Chemical compound [Si].[Zr] UVGLBOPDEUYYCS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- CZXRMHUWVGPWRM-UHFFFAOYSA-N strontium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Sr+2].[Ba+2] CZXRMHUWVGPWRM-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/03001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
- H01L2224/03002—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for supporting the semiconductor or solid-state body
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
- H01L2224/11009—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for protecting parts during manufacture
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13005—Structure
- H01L2224/13007—Bump connector smaller than the underlying bonding area, e.g. than the under bump metallisation [UBM]
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- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
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- H01L2224/13022—Disposition the bump connector being at least partially embedded in the surface
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- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
- H01L2224/13082—Two-layer arrangements
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Abstract
【解決手段】本発明の集積回路素子は、半導体構造物と、半導体構造物を貫通するTSV(through−silicon−via)構造と、を備え、TSV構造は、導電性プラグと、導電性プラグと離隔して配置され、導電性プラグを取り囲む第1導電性バリア膜と、導電性プラグと第1導電性バリア膜との間に介在する絶縁薄膜と、を備える。
【選択図】図1A
Description
また、本発明の目的は、TSV構造を構成する金属プラグと半導体基板との電位差によってTSV構造から金属イオンが半導体基板の内部に拡散する現象を防止できる構造を有する集積回路素子の製造方法を提供することにある。
20 半導体構造物
20B 第2表面
20T 第1表面
22、130、330、530、730 ビアホール
30A、30B、160、260、360、460、560、660、760、810、1022、1032 TSV(through−silicon−via)構造
32、62、156、256、356、456、556、656、756、812 導電性プラグ
32A、62A、154A、354、554、754A 金属プラグ
32B、62B、152、352、452、552、652、752 第2導電性バリア膜
32L 導電性プラグの他端
32T、62T 導電性プラグの一端
34、144、344、544、744 第1導電性バリア膜
34L 第1導電性バリア膜の他端
34T 第1導電性バリア膜の一端
36、146、346、546、746、816 絶縁薄膜
40、140、340、540、740 ビア絶縁膜
52 第1導電層
54 第2導電層
102、820 基板
102B 基板の底面
102D 基板のバックサイド
110 FEOL(front−end−of−line)構造
112 個別素子
114 層間絶縁膜
120 第1研磨停止層
122、724 マスクパターン
122H、724H ホール
132 第1ホール
134 第2ホール
130D 深さ
130W 幅
144E 第1導電性バリア膜の端部
154、754 金属膜
160B、360B、560B TSV構造の底面
162 第2研磨停止層
164 金属層間絶縁膜
164H 金属配線用ホール
166 第3研磨停止層
168 金属層間絶縁膜構造
170 BEOL(back−end−of−line)構造
172 金属配線層
172A 配線用バリア膜
172B 配線用金属層
174 コンタクトプラグ
176、576 多層配線パターン
180、380、580、790、806、826、828 コンタクトパッド
190 バックサイド絶縁膜
518 配線構造
710 エッチング停止層
722 ハードマスク層
722P ハードマスクパターン
782 パッシベーション層
784 バンプ
784A 第1金属層
784B 第2金属層
786 接着コーティング層
788 ウェーハ支持基板
802 半導体ダイ
802B 半導体ダイの他側
802T 半導体ダイの一側
804 活性領域
808 半田バンプ
814 導電性バリア膜
830 アンダーフィル材料層
840 モルディング化合物層
850 導電層
1010 パッケージ基板
1012 基板内部配線
1014 接続端子
1016 ソルダボール
1020 半導体チップ
1030 制御チップ
1040 密封材
1050 連結部材
1110 モジュール基板
1120 制御チップ
1130 半導体パッケージ
1150 入出力端子
1210 制御器
1220 入/出力装置
1230 メモリ
1240 インターフェース
1250 バス
Claims (30)
- 半導体構造物と、
前記半導体構造物を貫通するTSV(through−silicon−via)構造と、を備え、
前記TSV構造は、
導電性プラグと、
前記導電性プラグと離隔して配置され、前記導電性プラグを取り囲む第1導電性バリア膜と、
前記導電性プラグと前記第1導電性バリア膜との間に介在する絶縁薄膜と、を備えることを特徴とする集積回路素子。 - 前記導電性プラグは、第1金属を含み、
前記第1導電性バリア膜は、前記第1金属とは異なる第2金属を含むことを特徴とする請求項1に記載の集積回路素子。 - 前記半導体構造物と前記第1導電性バリア膜との間に介在するビア絶縁膜を更に備えることを特徴とする請求項1に記載の集積回路素子。
- 前記絶縁薄膜の厚さは、前記ビア絶縁膜の厚さより更に薄いことを特徴とする請求項3に記載の集積回路素子。
- 前記半導体構造物の第1表面上に、前記導電性プラグの一端及び前記第1導電性バリア膜の一端に当接する第1導電層を更に備えることを特徴とする請求項1に記載の集積回路素子。
- 前記半導体構造物の第1表面の反対側である第2表面上に、前記導電性プラグの他端及び前記第1導電性バリア膜の他端に当接する第2導電層を更に備えることを特徴とする請求項5に記載の集積回路素子。
- 前記導電性プラグ及び前記第1導電性バリア膜が互いに等電位を有するように、前記導電性プラグ及び前記第1導電性バリア膜は、前記第1導電層及び前記第2導電層を通じて互いに電気的に連結されることを特徴とする請求項6に記載の集積回路素子。
- 前記第1導電性バリア膜は、前記TSV構造の長手方向に沿って均一な厚さを有することを特徴とする請求項1に記載の集積回路素子。
- 前記絶縁薄膜は、前記TSV構造の長手方向に沿って均一な厚さを有することを特徴とする請求項1に記載の集積回路素子。
- 前記導電性プラグは、
前記絶縁薄膜によって取り囲まれて前記半導体構造物を貫通する金属プラグと、
前記金属プラグと前記絶縁薄膜との間で、前記金属プラグの外部側壁を取り囲む第2導電性バリア膜と、を備えることを特徴とする請求項1に記載の集積回路素子。 - 前記第1導電性バリア膜は、前記TSV構造の長手方向に沿って均一な厚さを有し、
前記第2導電性バリア膜は、前記TSV構造の長手方向に沿って可変的な厚さを有することを特徴とする請求項10に記載の集積回路素子。 - 前記半導体構造物は、半導体基板と、該半導体基板を覆う層間絶縁膜と、を備え、
前記導電性プラグ、前記絶縁薄膜、及び前記第1導電性バリア膜は、それぞれ前記半導体基板及び前記層間絶縁膜を貫通して延びることを特徴とする請求項1に記載の集積回路素子。 - 前記半導体構造物は、半導体基板と、該半導体基板を覆う層間絶縁膜と、該層間絶縁膜を覆う金属層間絶縁膜と、を備え、
前記導電性プラグ、前記絶縁薄膜、及び前記第1導電性バリア膜は、それぞれ前記半導体基板、前記層間絶縁膜、及び前記金属層間絶縁膜を貫通して延びることを特徴とする請求項1に記載の集積回路素子。 - 接続端子を有するパッケージ基板と、
前記パッケージ基板上に積層され、半導体基板及び前記半導体基板を貫通するTSV(through−silicon−via)構造を備える少なくとも一つの半導体チップと、を備え、
前記TSV構造は、
前記接続端子に連結される導電性プラグと、
前記導電性プラグと離隔して前記導電性プラグを取り囲み、前記接続端子に連結される第1導電性バリア膜と、
前記導電性プラグと前記第1導電性バリア膜との間に介在する絶縁薄膜と、を備えることを特徴とする集積回路素子。 - 前記少なくとも一つの半導体チップは、前記半導体基板上に形成された複数の導電層を更に備え、
前記導電性プラグ及び前記第1導電性バリア膜は、互いに等電位を有するように前記複数の導電層のうちの少なくとも一つの導電層を通じて互いに電気的に連結されることを特徴とする請求項14に記載の集積回路素子。 - 前記パッケージ基板と前記少なくとも一つの半導体チップとの間に、これらを互いに電気的に連結する導電層を更に備え、
前記導電性プラグ及び前記第1導電性バリア膜は、互いに等電位を有するように前記導電層を通じて互いに電気的に連結されることを特徴とする請求項14に記載の集積回路素子。 - 前記導電層は、半田バンプからなることを特徴とする請求項16に記載の集積回路素子。
- 半導体構造物にビアホールを形成する段階と、
前記ビアホールの内壁を覆うビア絶縁膜を形成する段階と、
前記ビアホール内で前記ビア絶縁膜上に第1導電性バリア膜を形成する段階と、
前記ビアホール内で前記第1導電性バリア膜上に絶縁薄膜を形成する段階と、
前記ビアホール内で前記絶縁薄膜上に、前記第1導電性バリア膜と離隔する導電性プラグを形成する段階と、を有することを特徴とする集積回路素子の製造方法。 - 前記ビア絶縁膜は、前記ビアホール内で第1厚さを有するように形成され、
前記絶縁薄膜は、前記ビアホール内で前記第1厚さより薄い第2厚さを有するように形成されることを特徴とする請求項18に記載の集積回路素子の製造方法。 - 前記第1導電性バリア膜は、前記ビアホールの長手方向に沿って均一な厚さを有するように形成されることを特徴とする請求項18に記載の集積回路素子の製造方法。
- 前記絶縁薄膜は、前記ビアホールの長手方向に沿って均一な厚さを有するように形成されることを特徴とする請求項18に記載の集積回路素子の製造方法。
- 前記導電性プラグを形成する段階は、
前記ビアホール内で前記絶縁薄膜上に第2導電性バリア膜を形成する段階と、
前記ビアホール内で前記第2導電性バリア膜上に金属プラグを形成する段階と、を含むことを特徴とする請求項18に記載の集積回路素子の製造方法。 - 前記第2導電性バリア膜は、前記ビアホールの入口付近より前記ビアホールの底面付近で更に薄い厚さを有するように形成されることを特徴とする請求項22に記載の集積回路素子の製造方法。
- 半導体基板内にビアホールを形成する段階と、
前記ビアホールの内壁を覆うビア絶縁膜を形成する段階と、
前記ビアホール内で前記ビア絶縁膜上に、導電性プラグ、前記導電性プラグと離隔して前記導電性プラグを取り囲む第1導電性バリア膜、及び前記導電性プラグと前記第1導電性バリア膜との間に介在する絶縁薄膜を備えるTSV(through−silicon−via)構造を形成する段階と、
前記導電性プラグの一端から前記第1導電性バリア膜の一端まで延びる第1導電層を前記TSV構造の一側に形成する段階と、を有することを特徴とする集積回路素子の製造方法。 - 前記TSV構造を形成する段階は、前記ビア絶縁膜の厚さより薄い厚さを有する前記絶縁薄膜を形成する段階を含むことを特徴とする請求項24に記載の集積回路素子の製造方法。
- 第1部分及び第2部分を備える半導体構造物と、
前記半導体構造物の前記第1部分と前記第2部分との間に位置するビア構造と、を備え、
前記ビア構造は、
導電性プラグと、
前記導電性プラグと離隔して配置された導電性バリア膜と、
前記導電性プラグと前記導電性バリア膜との間に介在する絶縁層と、を備えることを特徴とする集積回路素子。 - 前記導電性プラグの一端及び前記導電性バリア膜の一端に形成された導電層を更に備えることを特徴とする請求項26に記載の集積回路素子。
- 前記導電層は、前記半導体構造物の前記第1部分の表面から前記半導体構造物の前記第2部分の表面まで延びることを特徴とする請求項27に記載の集積回路素子。
- 前記半導体構造物の前記第1部分の表面、前記半導体構造物の前記第2部分の表面、前記導電性プラグの一端、及び前記導電性バリア膜の一端は、略同一平面上にあることを特徴とする請求項28に記載の集積回路素子。
- 前記ビア構造は、TSV(through−silicon−via)構造を備え、
前記導電性バリア膜は、第1導電性バリア膜を備え、
前記導電性プラグは、
金属プラグと、
前記絶縁層と前記金属プラグとの間に介在する第2導電性バリア膜と、を備え、
前記第2導電性バリア膜は、不均一な厚さを有することを特徴とする請求項26に記載の集積回路素子。
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