JP2014057026A - 炭化珪素半導体装置 - Google Patents
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 126
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 126
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 238000009826 distribution Methods 0.000 claims abstract description 269
- 239000012535 impurity Substances 0.000 claims abstract description 73
- 239000010410 layer Substances 0.000 claims abstract description 48
- 239000002344 surface layer Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 4
- 230000001133 acceleration Effects 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
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- 238000003892 spreading Methods 0.000 description 2
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- 230000005669 field effect Effects 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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Abstract
【解決手段】本発明は、炭化珪素基板10上に形成された炭化珪素ドリフト層1と、炭化珪素ドリフト層1表層に形成されたP型領域2と、P型領域2の形成箇所に応じて炭化珪素ドリフト層1上に形成されたショットキー電極3とを備える。そしてP型領域2が、P型不純物の分布の繰り返し単位であるユニットセル20が複数配列されることによって形成される。また各ユニットセル20が、第1濃度でP型不純物が分布する第1分布領域20Aと、第1濃度より高い第2濃度でP型不純物が分布する第2分布領域20Bとを少なくとも有する。
【選択図】図3
Description
<構成>
図1は、本発明の本実施形態に関する炭化珪素半導体装置の構造を示す断面図である。本実施形態では、炭化珪素を用いたJBSまたはMPSが例として示されているが、これらの構造に限定されるものではなく、SBD、MOSFET等であってもよい。
図1に示された炭化珪素半導体装置の製造方法について、以下に説明する。
次に、本実施形態に関する炭化珪素半導体装置の動作について説明する。
図29は、本実施形態の変形例を示す炭化珪素半導体装置の上面図である。
本発明に関する実施形態によれば、炭化珪素半導体装置が、第1導電型(n型)の炭化珪素基板10上に形成された、第1導電型の炭化珪素ドリフト層1と、炭化珪素ドリフト層1表層に形成された、第2導電型(P型)領域としてのP型領域2と、P型領域2の形成箇所に応じて炭化珪素ドリフト層1上に形成されたショットキー電極3とを備える。
Claims (12)
- 第1導電型の炭化珪素基板上に形成された、第1導電型の炭化珪素ドリフト層と、
前記炭化珪素ドリフト層表層に形成された、第2導電型領域と、
前記第2導電型領域の形成箇所に応じて前記炭化珪素ドリフト層上に形成された、ショットキー電極とを備え、
前記第2導電型領域が、第2導電型不純物の分布の繰り返し単位であるユニットセルが複数配列されることによって形成され、
各前記ユニットセルが、第1濃度で前記第2導電型不純物が分布する第1分布領域と、前記第1濃度より高い第2濃度で前記第2導電型不純物が分布する第2分布領域とを少なくとも有することを特徴とする、
炭化珪素半導体装置。 - 一の前記形成箇所における各前記ユニットセルと、他の前記形成箇所における各前記ユニットセルとで、前記第1分布領域および前記第2分布領域の占有比率が異なることを特徴とする、
請求項1に記載の炭化珪素半導体装置。 - 各前記ユニットセルにおける前記第2分布領域の占有比率が、前記炭化珪素ドリフト層表層の中央部分では、その周辺部分よりも高いことを特徴とする、
請求項1または2に記載の炭化珪素半導体装置。 - 各前記ユニットセルにおける前記第2分布領域の占有比率が、前記炭化珪素ドリフト層表層のワイヤボンド箇所に対応する部分では、その周辺部分よりも高いことを特徴とする、
請求項1〜3のいずれかに記載の炭化珪素半導体装置。 - 各前記ユニットセルにおける前記第2分布領域の占有比率が、前記炭化珪素ドリフト層表層の電源接続箇所に対応する部分では、その周辺部分よりも高いことを特徴とする、
請求項1〜3のいずれかに記載の炭化珪素半導体装置。 - それぞれが内包する前記分布領域を任意に設定した複数の前記ユニットセルが、前記炭化珪素基板上の有効領域を形成することを特徴とする、
請求項1〜5のいずれかに記載の炭化珪素半導体装置。 - 前記第1分布領域および前記第2分布領域は、互いに離間した単位分布領域が複数配列して形成された分布領域であり、
前記第1分布領域における各前記単位分布領域と、前記第2分布領域における各前記単位分布領域とは、前記炭化珪素ドリフト層表層における占有面積が等しいことを特徴とする、
請求項1〜6のいずれかに記載の炭化珪素半導体装置。 - 前記第1分布領域および前記第2分布領域は、互いに離間した単位分布領域が複数配列して形成された分布領域であり、
前記第1分布領域における各前記単位分布領域と、前記第2分布領域における各前記単位分布領域とは、前記炭化珪素ドリフト層表層における占有面積が異なることを特徴とする、
請求項1〜6のいずれかに記載の炭化珪素半導体装置。 - 前記炭化珪素ドリフト層表層における、各前記ユニットセルの占有面積が等しいことを特徴とする、
請求項1〜8のいずれかに記載の炭化珪素半導体装置。 - 前記炭化珪素ドリフト層表層における、各前記ユニットセルの占有面積が異なることを特徴とする、
請求項1〜8のいずれかに記載の炭化珪素半導体装置。 - 前記第1分布領域への前記第2導電型不純物の注入加速電圧と、前記第2分布領域への前記第2導電型不純物の注入加速電圧とが異なることを特徴とする、
請求項1〜10のいずれかに記載の炭化珪素半導体装置。 - 前記ショットキー電極が、当該ショットキー電極に対する位置合わせマークを備えることを特徴とする、
請求項1〜11のいずれかに記載の炭化珪素半導体装置。
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JP2012202468A JP6029397B2 (ja) | 2012-09-14 | 2012-09-14 | 炭化珪素半導体装置 |
CN201310191318.8A CN103681783B (zh) | 2012-09-14 | 2013-05-22 | 碳化硅半导体装置 |
US13/931,203 US9184306B2 (en) | 2012-09-14 | 2013-06-28 | Silicon carbide semiconductor device |
KR1020130106390A KR101603570B1 (ko) | 2012-09-14 | 2013-09-05 | 탄화 규소 반도체장치 |
DE102013217850.6A DE102013217850B4 (de) | 2012-09-14 | 2013-09-06 | Siliziumcarbid-Halbleitervorrichtung und Verfahren zur Herstellung derselben |
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JP2017152523A (ja) * | 2016-02-24 | 2017-08-31 | 株式会社日立製作所 | パワー半導体素子およびそれを用いるパワー半導体モジュール |
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CN112216746B (zh) * | 2019-07-11 | 2024-05-14 | 即思创意股份有限公司 | 碳化硅半导体器件 |
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JP5474218B2 (ja) | 2010-12-28 | 2014-04-16 | 三菱電機株式会社 | 半導体装置 |
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JPS60771A (ja) * | 1983-06-17 | 1985-01-05 | Nec Corp | 半導体装置 |
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DE102013217850B4 (de) | 2024-05-16 |
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KR20140035823A (ko) | 2014-03-24 |
US20140077226A1 (en) | 2014-03-20 |
CN103681783B (zh) | 2016-08-03 |
DE102013217850A1 (de) | 2014-03-20 |
CN103681783A (zh) | 2014-03-26 |
JP6029397B2 (ja) | 2016-11-24 |
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