JP2014042239A5 - - Google Patents

Download PDF

Info

Publication number
JP2014042239A5
JP2014042239A5 JP2013167396A JP2013167396A JP2014042239A5 JP 2014042239 A5 JP2014042239 A5 JP 2014042239A5 JP 2013167396 A JP2013167396 A JP 2013167396A JP 2013167396 A JP2013167396 A JP 2013167396A JP 2014042239 A5 JP2014042239 A5 JP 2014042239A5
Authority
JP
Japan
Prior art keywords
terminal
fet
voltage
state
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013167396A
Other languages
English (en)
Japanese (ja)
Other versions
JP6440348B2 (ja
JP2014042239A (ja
Filing date
Publication date
Priority claimed from US13/587,590 external-priority patent/US8729952B2/en
Application filed filed Critical
Publication of JP2014042239A publication Critical patent/JP2014042239A/ja
Publication of JP2014042239A5 publication Critical patent/JP2014042239A5/ja
Application granted granted Critical
Publication of JP6440348B2 publication Critical patent/JP6440348B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013167396A 2012-08-16 2013-08-12 非負バイアスの切替装置 Active JP6440348B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/587,590 2012-08-16
US13/587,590 US8729952B2 (en) 2012-08-16 2012-08-16 Switching device with non-negative biasing

Publications (3)

Publication Number Publication Date
JP2014042239A JP2014042239A (ja) 2014-03-06
JP2014042239A5 true JP2014042239A5 (enExample) 2016-07-21
JP6440348B2 JP6440348B2 (ja) 2018-12-19

Family

ID=50064923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013167396A Active JP6440348B2 (ja) 2012-08-16 2013-08-12 非負バイアスの切替装置

Country Status (7)

Country Link
US (1) US8729952B2 (enExample)
JP (1) JP6440348B2 (enExample)
KR (1) KR102031993B1 (enExample)
CN (1) CN103595381B (enExample)
FR (1) FR2994621A1 (enExample)
IL (1) IL227881A (enExample)
TW (1) TWI604694B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014024340A1 (ja) * 2012-08-09 2014-02-13 パナソニック株式会社 高周波半導体スイッチ回路とそれを備えた高周波無線システム
US9379698B2 (en) 2014-02-04 2016-06-28 Triquint Semiconductor, Inc. Field effect transistor switching circuit
TWI580185B (zh) * 2015-03-05 2017-04-21 瑞昱半導體股份有限公司 類比開關電路
CN106033961B (zh) * 2015-03-12 2019-09-03 瑞昱半导体股份有限公司 类比开关电路
US20170092637A1 (en) * 2015-09-30 2017-03-30 Infineon Technologies Ag Semiconductor ESD Protection Device and Method
KR101823269B1 (ko) 2016-11-18 2018-01-29 삼성전기주식회사 다이나믹 바이어스를 갖는 고주파 스위치 장치
CN106788369A (zh) * 2016-11-28 2017-05-31 无锡中普微电子有限公司 具有改进偏置电路的射频开关电路
CN106603053A (zh) * 2016-11-28 2017-04-26 无锡中普微电子有限公司 具有改进偏置电路的射频开关电路
KR102348686B1 (ko) 2017-08-04 2022-01-06 삼성전기주식회사 션트 및 바이어스 복합형의 고주파 스위치 장치
US11283444B2 (en) 2018-03-28 2022-03-22 Intel Corporation Techniques for multiple signal fan-out
KR102583788B1 (ko) * 2018-07-09 2023-09-26 삼성전기주식회사 누설 전류 저감형 고주파 스위치 장치
KR102069633B1 (ko) * 2018-07-10 2020-01-23 삼성전기주식회사 제어 버퍼 회로 및 고주파 스위치 장치
US11165514B2 (en) 2019-07-09 2021-11-02 Skyworks Solutions, Inc. Envelope alignment calibration in radio frequency systems
US11431357B2 (en) * 2019-07-09 2022-08-30 Skyworks Solutions, Inc. Envelope controlled radio frequency switches
US10903821B1 (en) * 2019-08-14 2021-01-26 Qorvo Us, Inc. Complementary metal-oxide semiconductor (CMOS) compatible RF switch and high voltage control circuit (HVCC)
EP4480042A1 (en) * 2022-02-16 2024-12-25 Massachusetts Institute Of Technology Terahertz beam steering antenna arrays
CN118199600B (zh) * 2024-05-15 2024-07-26 深圳飞骧科技股份有限公司 调谐开关电路及射频芯片

Family Cites Families (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3551788A (en) 1968-09-13 1970-12-29 Servo Corp Of America High voltage transistorized stack with leakage current compensation
US3699359A (en) 1971-04-20 1972-10-17 Philco Ford Corp Electronic latching device
US4053916A (en) 1975-09-04 1977-10-11 Westinghouse Electric Corporation Silicon on sapphire MOS transistor
DE2851789C2 (de) 1978-11-30 1981-10-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schaltung zum Schalten und Übertragen von Wechselspannungen
US4491750A (en) 1982-09-28 1985-01-01 Eaton Corporation Bidirectionally source stacked FETs with drain-referenced common gating
JPH01254014A (ja) 1988-04-04 1989-10-11 Toshiba Corp 電力増幅器
JPH07105447B2 (ja) 1988-12-15 1995-11-13 株式会社東芝 伝送ゲート
US5313083A (en) 1988-12-16 1994-05-17 Raytheon Company R.F. switching circuits
US5105164A (en) 1989-02-28 1992-04-14 At&T Bell Laboratories High efficiency uhf linear power amplifier
US5012123A (en) 1989-03-29 1991-04-30 Hittite Microwave, Inc. High-power rf switching system
JPH0732335B2 (ja) 1990-11-16 1995-04-10 日本電信電話株式会社 高周波増幅器
JP3243892B2 (ja) 1993-05-21 2002-01-07 ソニー株式会社 信号切り替え用スイッチ
US5572040A (en) 1993-07-12 1996-11-05 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
US5930638A (en) 1993-07-12 1999-07-27 Peregrine Semiconductor Corp. Method of making a low parasitic resistor on ultrathin silicon on insulator
US5973363A (en) 1993-07-12 1999-10-26 Peregrine Semiconductor Corp. CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator
US5973382A (en) 1993-07-12 1999-10-26 Peregrine Semiconductor Corporation Capacitor on ultrathin semiconductor on insulator
US5416043A (en) 1993-07-12 1995-05-16 Peregrine Semiconductor Corporation Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer
US5863823A (en) 1993-07-12 1999-01-26 Peregrine Semiconductor Corporation Self-aligned edge control in silicon on insulator
US5452473A (en) 1994-02-28 1995-09-19 Qualcomm Incorporated Reverse link, transmit power correction and limitation in a radiotelephone system
US5553295A (en) 1994-03-23 1996-09-03 Intel Corporation Method and apparatus for regulating the output voltage of negative charge pumps
JP2801563B2 (ja) 1994-08-30 1998-09-21 松下電器産業株式会社 通信用無線機の送受信回路、半導体集積回路装置および通信用無線機
JPH08148949A (ja) 1994-11-18 1996-06-07 Fujitsu Ltd 高周波増幅器
FR2742942B1 (fr) 1995-12-26 1998-01-16 Sgs Thomson Microelectronics Generateur de creneaux de haute tension
US5777530A (en) 1996-01-31 1998-07-07 Matsushita Electric Industrial Co., Ltd. Switch attenuator
JPH09232932A (ja) * 1996-02-27 1997-09-05 Matsushita Electric Ind Co Ltd アンテナ切替回路
JP3484462B2 (ja) 1996-04-11 2004-01-06 株式会社ルネサステクノロジ フローティングsoi−mosfetの寿命を予測する方法
JPH09284114A (ja) 1996-04-19 1997-10-31 Toshiba Microelectron Corp アナログ入力回路
WO1998006174A1 (en) 1996-08-05 1998-02-12 Mitsubishi Denki Kabushiki Kaisha High-frequency integrated circuit for high-frequency radio transmitter-receiver suppressed in influence of high-frequency power leakage
US5818099A (en) 1996-10-03 1998-10-06 International Business Machines Corporation MOS high frequency switch circuit using a variable well bias
US5920233A (en) 1996-11-18 1999-07-06 Peregrine Semiconductor Corp. Phase locked loop including a sampling circuit for reducing spurious side bands
JPH10242829A (ja) 1997-02-24 1998-09-11 Sanyo Electric Co Ltd スイッチ回路装置
JP3441330B2 (ja) 1997-02-28 2003-09-02 株式会社東芝 半導体装置及びその製造方法
US6160292A (en) 1997-04-23 2000-12-12 International Business Machines Corporation Circuit and methods to improve the operation of SOI devices
US6159825A (en) 1997-05-12 2000-12-12 Silicon Genesis Corporation Controlled cleavage thin film separation process using a reusable substrate
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6180496B1 (en) 1997-08-29 2001-01-30 Silicon Genesis Corporation In situ plasma wafer bonding method
JPH11136111A (ja) 1997-10-30 1999-05-21 Sony Corp 高周波回路
JP3711193B2 (ja) 1998-01-16 2005-10-26 三菱電機株式会社 送受信切り換え回路
US5959488A (en) 1998-01-24 1999-09-28 Winbond Electronics Corp. Dual-node capacitor coupled MOSFET for improving ESD performance
US6271067B1 (en) 1998-02-27 2001-08-07 Micron Technology, Inc. Methods of forming field effect transistors and field effect transistor circuitry
US6249027B1 (en) 1998-06-08 2001-06-19 Sun Microsystems, Inc. Partially depleted SOI device having a dedicated single body bias means
JP2000022160A (ja) 1998-07-06 2000-01-21 Hitachi Ltd 半導体集積回路及びその製造方法
JP4360702B2 (ja) 1998-08-07 2009-11-11 株式会社ルネサステクノロジ 半導体装置
JP3408762B2 (ja) 1998-12-03 2003-05-19 シャープ株式会社 Soi構造の半導体装置及びその製造方法
US6171965B1 (en) 1999-04-21 2001-01-09 Silicon Genesis Corporation Treatment method of cleaved film for the manufacture of substrates
AU6905000A (en) 1999-08-10 2001-03-05 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
JP3544351B2 (ja) * 1999-11-26 2004-07-21 松下電器産業株式会社 高周波増幅回路およびそれを用いた移動体通信端末
JP3608456B2 (ja) 1999-12-08 2005-01-12 セイコーエプソン株式会社 Soi構造のmis電界効果トランジスタの製造方法
US6504212B1 (en) 2000-02-03 2003-01-07 International Business Machines Corporation Method and apparatus for enhanced SOI passgate operations
JP3504212B2 (ja) 2000-04-04 2004-03-08 シャープ株式会社 Soi構造の半導体装置
JP2002033399A (ja) 2000-07-13 2002-01-31 Toshiba Corp 半導体集積回路及びその製造方法
US6816016B2 (en) 2000-08-10 2004-11-09 Tropian, Inc. High-efficiency modulating RF amplifier
US6496074B1 (en) 2000-09-28 2002-12-17 Koninklijke Philips Electronics N.V. Cascode bootstrapped analog power amplifier circuit
US6978437B1 (en) 2000-10-10 2005-12-20 Toppan Photomasks, Inc. Photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufacture with same
JP4434474B2 (ja) 2000-11-29 2010-03-17 Necエレクトロニクス株式会社 Mosトランジスタの模擬試験方法
JP3736356B2 (ja) * 2001-02-01 2006-01-18 日本電気株式会社 高周波スイッチ回路
TWI230392B (en) 2001-06-18 2005-04-01 Innovative Silicon Sa Semiconductor device
US6819938B2 (en) 2001-06-26 2004-11-16 Qualcomm Incorporated System and method for power control calibration and a wireless communication device
KR100906356B1 (ko) 2001-08-10 2009-07-06 히타치 긴조쿠 가부시키가이샤 하이 패스 필터
JP3986780B2 (ja) 2001-08-17 2007-10-03 三菱電機株式会社 相補型プッシュプル増幅器
US7796969B2 (en) 2001-10-10 2010-09-14 Peregrine Semiconductor Corporation Symmetrically and asymmetrically stacked transistor group RF switch
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
JP3813869B2 (ja) * 2001-12-20 2006-08-23 松下電器産業株式会社 電界効果トランジスタスイッチ回路
JP3724450B2 (ja) * 2002-04-23 2005-12-07 株式会社村田製作所 無線通信用高周波回路およびそれを備えた通信機
JP3947044B2 (ja) 2002-05-31 2007-07-18 富士通株式会社 入出力バッファ
US6642578B1 (en) * 2002-07-22 2003-11-04 Anadigics, Inc. Linearity radio frequency switch with low control voltage
JP3445608B2 (ja) 2002-10-25 2003-09-08 株式会社東芝 映像情報を含むデジタル情報の管理システム
JP2004205301A (ja) 2002-12-25 2004-07-22 Nec Corp 評価装置及びそれに用いる回路設計方法
JP4257971B2 (ja) 2003-03-27 2009-04-30 独立行政法人産業技術総合研究所 二重ゲート電界効果トランジスタのゲート信号印加方法
JP2005006072A (ja) * 2003-06-12 2005-01-06 Matsushita Electric Ind Co Ltd 高周波スイッチ装置および半導体装置
JP4342970B2 (ja) 2004-02-02 2009-10-14 株式会社東芝 半導体メモリ装置及びその製造方法
US7042044B2 (en) 2004-02-18 2006-05-09 Koucheng Wu Nor-type channel-program channel-erase contactless flash memory on SOI
US7072217B2 (en) 2004-02-24 2006-07-04 Micron Technology, Inc. Multi-state memory cell with asymmetric charge trapping
US7158067B2 (en) 2005-01-31 2007-01-02 The United States Of America As Represented By The Secretary Of The Navy Analog to digital converter using sawtooth voltage signals with differential comparator
JP2006238058A (ja) * 2005-02-25 2006-09-07 Matsushita Electric Ind Co Ltd 高周波用スイッチ回路
US7402850B2 (en) 2005-06-21 2008-07-22 Micron Technology, Inc. Back-side trapped non-volatile memory device
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US20070023833A1 (en) 2005-07-28 2007-02-01 Serguei Okhonin Method for reading a memory cell having an electrically floating body transistor, and memory cell and array implementing same
EP1914890A1 (en) * 2005-08-09 2008-04-23 Hitachi Metals Precision, Ltd. High-frequency switch circuit
US7863691B2 (en) 2008-03-10 2011-01-04 International Business Machines Corporation Merged field effect transistor cells for switching
JP2010220200A (ja) * 2009-02-19 2010-09-30 Renesas Electronics Corp 導通切替回路、導通切替回路ブロック、及び導通切替回路の動作方法
JP2011193191A (ja) * 2010-03-15 2011-09-29 Renesas Electronics Corp 半導体集積回路およびそれを内蔵した高周波モジュール
JP5476198B2 (ja) * 2010-04-19 2014-04-23 ルネサスエレクトロニクス株式会社 高周波スイッチ回路

Similar Documents

Publication Publication Date Title
JP2014042239A5 (enExample)
CN104969479B (zh) 使用单刀三掷开关减少lna旁路模式插入损耗的rf前端模块
WO2018015921A3 (en) Hybrid switch including gan hemt and mosfet
JP2014155227A5 (enExample)
JP6440348B2 (ja) 非負バイアスの切替装置
TWI595751B (zh) 本體接觸部分空乏絕緣層上覆矽電晶體
WO2014011510A3 (en) Circuits, devices, methods and combinations related to silicon-on-insulator based radio-frequency switches
JP2015523810A5 (enExample)
CN104821811B (zh) 场效应晶体管开关电路
EP3696980A3 (en) Configurations of composite devices comprising of a normally-on fet and a normally-off fet
JP2015201841A5 (enExample)
WO2013081551A8 (en) Spst switch, spdt switch, spmt switch and communication device using the same
FI20150334A7 (fi) Paranneltu puolijohdekokoonpano
US9331690B2 (en) Switching circuit and RF switch including the same
JP2015213296A5 (enExample)
CN103595380A (zh) 互补式开关射频切换器
CN103973280A (zh) 高频半导体开关及无线设备
US9124353B2 (en) Switching circuit and RF switch including the same
JP2011059709A5 (enExample)
JP2010028304A (ja) 高周波信号用スイッチ回路
JP2006173754A (ja) 高周波スイッチ
TW201631747A (zh) 高頻半導體積體電路
WO2015179879A3 (en) Switch isolation network
US9438302B2 (en) Radio frequency switching module and control method thereof
KR20130124204A (ko) Hbt를 이용한 rf 스위치