JP2013545304A5 - - Google Patents

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Publication number
JP2013545304A5
JP2013545304A5 JP2013536774A JP2013536774A JP2013545304A5 JP 2013545304 A5 JP2013545304 A5 JP 2013545304A5 JP 2013536774 A JP2013536774 A JP 2013536774A JP 2013536774 A JP2013536774 A JP 2013536774A JP 2013545304 A5 JP2013545304 A5 JP 2013545304A5
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JP
Japan
Prior art keywords
region
field
integrated circuit
drain
extended drain
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JP2013536774A
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English (en)
Japanese (ja)
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JP5936616B2 (ja
JP2013545304A (ja
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Priority claimed from US13/281,260 external-priority patent/US8754469B2/en
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Publication of JP2013545304A publication Critical patent/JP2013545304A/ja
Publication of JP2013545304A5 publication Critical patent/JP2013545304A5/ja
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Publication of JP5936616B2 publication Critical patent/JP5936616B2/ja
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JP2013536774A 2010-10-26 2011-10-26 ハイブリッド能動フィールドギャップ拡張ドレインｍｏｓトランジスタ Active JP5936616B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US40664010P 2010-10-26 2010-10-26
US61/406,640 2010-10-26
US13/281,260 US8754469B2 (en) 2010-10-26 2011-10-25 Hybrid active-field gap extended drain MOS transistor
US13/281,260 2011-10-25
PCT/US2011/057843 WO2012058281A2 (en) 2010-10-26 2011-10-26 Hybrid active-field gap extended drain mos transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016095753A Division JP6106310B2 (ja) 2010-10-26 2016-05-12 ハイブリッド能動フィールドギャップ拡張ドレインｍｏｓトランジスタ

Publications (3)

Publication Number Publication Date
JP2013545304A JP2013545304A (ja) 2013-12-19
JP2013545304A5 true JP2013545304A5 (enExample) 2014-12-11
JP5936616B2 JP5936616B2 (ja) 2016-06-22

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ID=45972272

Family Applications (2)

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JP2013536774A Active JP5936616B2 (ja) 2010-10-26 2011-10-26 ハイブリッド能動フィールドギャップ拡張ドレインｍｏｓトランジスタ
JP2016095753A Active JP6106310B2 (ja) 2010-10-26 2016-05-12 ハイブリッド能動フィールドギャップ拡張ドレインｍｏｓトランジスタ

Family Applications After (1)

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JP2016095753A Active JP6106310B2 (ja) 2010-10-26 2016-05-12 ハイブリッド能動フィールドギャップ拡張ドレインｍｏｓトランジスタ

Country Status (4)

Country Link
US (4) US8754469B2 (enExample)
JP (2) JP5936616B2 (enExample)
CN (2) CN106057797B (enExample)
WO (1) WO2012058281A2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5586546B2 (ja) * 2011-03-23 2014-09-10 株式会社東芝 半導体装置
JP5973824B2 (ja) * 2012-07-25 2016-08-23 旭化成エレクトロニクス株式会社 電界効果トランジスタ及び半導体装置
JP2014154595A (ja) * 2013-02-05 2014-08-25 Seiko Instruments Inc 半導体装置
US9224861B2 (en) * 2013-05-09 2015-12-29 Freescale Semiconductor, Inc. Semiconductor device with notched gate
US9306059B2 (en) * 2014-03-20 2016-04-05 Kinetic Technologies Power semiconductor transistor with improved gate charge
JP6284421B2 (ja) * 2014-05-09 2018-02-28 ルネサスエレクトロニクス株式会社 半導体装置
EP4024474A3 (en) * 2014-06-18 2022-10-26 INTEL Corporation Extended-drain structures for high voltage field effect transistors
US10217821B2 (en) * 2014-09-01 2019-02-26 Sk Hynix System Ic Inc. Power integrated devices, electronic devices and electronic systems including the same
KR102228655B1 (ko) * 2014-11-07 2021-03-18 에스케이하이닉스 주식회사 고전압 집적소자 및 그 제조방법
KR102122365B1 (ko) * 2014-12-12 2020-06-12 삼성전자주식회사 반도체 소자
JP6345126B2 (ja) * 2015-01-21 2018-06-20 三菱電機株式会社 ショットキーバリアダイオード
TWI557919B (zh) * 2015-03-09 2016-11-11 世界先進積體電路股份有限公司 半導體裝置及其製造方法
US9818861B2 (en) 2015-04-24 2017-11-14 Vanguard International Semiconductor Corporation Semiconductor device and method for forming the same
CN105742365A (zh) * 2016-04-14 2016-07-06 东莞电子科技大学电子信息工程研究院 射频ldmos晶体管及其制作方法
EP3428971B1 (en) * 2017-07-12 2020-09-09 Nxp B.V. A semiconductor switch device and method
CN107845675B (zh) * 2017-10-30 2020-02-18 济南大学 一种横向双扩散金属氧化物半导体场效应管
US11145743B2 (en) 2019-04-29 2021-10-12 International Business Machines Corporation Transistor device having a comb-shaped channel region to increase the effective gate width
JP7175864B2 (ja) 2019-09-17 2022-11-21 株式会社東芝 半導体装置
CN113707715A (zh) * 2020-05-21 2021-11-26 无锡华润上华科技有限公司 半导体器件
US11581215B2 (en) * 2020-07-14 2023-02-14 Newport Fab, Llc Body-source-tied semiconductor-on-insulator (SOI) transistor
US10978559B1 (en) * 2020-08-03 2021-04-13 Texas Instruments Incorporated MOS transistor with folded channel and folded drift region
US11658214B2 (en) 2021-01-12 2023-05-23 Semiconductor Components Industries, Llc MOSFET device with undulating channel
US11610978B2 (en) 2021-03-11 2023-03-21 Nxp B.V. LDMOS with an improved breakdown performance
US11791392B2 (en) * 2021-06-08 2023-10-17 Globalfoundries Singapore Pte. Ltd. Extended-drain metal-oxide-semiconductor devices with a notched gate electrode
US12336220B2 (en) * 2022-02-24 2025-06-17 Globalfoundries Singapore Pte. Ltd. Extended-drain metal-oxide-semiconductor devices with a gap between the drain and body wells
JPWO2024203661A1 (enExample) * 2023-03-30 2024-10-03
TW202523090A (zh) * 2023-11-24 2025-06-01 日商村田製作所股份有限公司 半導體裝置
CN120417472B (zh) * 2025-07-04 2025-09-09 浙江创芯集成电路有限公司 半导体结构及其形成方法、半导体器件和电子设备

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69225552T2 (de) * 1991-10-15 1999-01-07 Texas Instruments Inc., Dallas, Tex. Lateraler doppel-diffundierter MOS-Transistor und Verfahren zu seiner Herstellung
US5512495A (en) * 1994-04-08 1996-04-30 Texas Instruments Incorporated Method of manufacturing extended drain resurf lateral DMOS devices
EP0714135B1 (en) * 1994-11-08 1999-01-13 STMicroelectronics S.r.l. Integrated device with a structure for protection against high electric fields
US6160290A (en) 1997-11-25 2000-12-12 Texas Instruments Incorporated Reduced surface field device having an extended field plate and method for forming the same
US6211552B1 (en) * 1999-05-27 2001-04-03 Texas Instruments Incorporated Resurf LDMOS device with deep drain region
DE10131706B4 (de) * 2001-06-29 2005-10-06 Atmel Germany Gmbh Verfahren zur Herstellung eines DMOS-Transistors
US6900101B2 (en) * 2003-06-13 2005-05-31 Texas Instruments Incorporated LDMOS transistors and methods for making the same
US6960807B2 (en) * 2003-11-25 2005-11-01 Texas Instruments Incorporated Drain extend MOS transistor with improved breakdown robustness
JP5133510B2 (ja) * 2005-08-24 2013-01-30 ラピスセミコンダクタ株式会社 半導体装置およびその製造方法
KR100887030B1 (ko) * 2007-05-29 2009-03-04 주식회사 동부하이텍 반도체 소자의 고전압 드리프트 형성 방법
KR100898225B1 (ko) * 2007-09-07 2009-05-18 주식회사 동부하이텍 반도체 소자 및 이의 제조방법
CN100592533C (zh) 2007-10-15 2010-02-24 天钰科技股份有限公司 横向扩散金属氧化物晶体管
US7838940B2 (en) * 2007-12-04 2010-11-23 Infineon Technologies Ag Drain-extended field effect transistor
US7888732B2 (en) * 2008-04-11 2011-02-15 Texas Instruments Incorporated Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectric
US7847351B2 (en) * 2008-04-11 2010-12-07 Texas Instruments Incorporated Lateral metal oxide semiconductor drain extension design
JP2010045130A (ja) * 2008-08-11 2010-02-25 Nec Electronics Corp 半導体装置および半導体装置の製造方法
EP2338177B1 (en) * 2008-10-20 2014-06-04 Nxp B.V. Insulated gate semiconductor device and method of manufacturing the same
JP4602465B2 (ja) * 2008-12-04 2010-12-22 株式会社東芝 半導体装置
US8236640B2 (en) * 2009-12-18 2012-08-07 Intel Corporation Method of fabricating a semiconductor device having gate finger elements extended over a plurality of isolation regions formed in the source and drain regions

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