JP2013534731A5 - - Google Patents
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- Publication number
- JP2013534731A5 JP2013534731A5 JP2013517642A JP2013517642A JP2013534731A5 JP 2013534731 A5 JP2013534731 A5 JP 2013534731A5 JP 2013517642 A JP2013517642 A JP 2013517642A JP 2013517642 A JP2013517642 A JP 2013517642A JP 2013534731 A5 JP2013534731 A5 JP 2013534731A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- wafer
- cleavage plane
- insulator wafer
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 50
- 239000012212 insulator Substances 0.000 claims description 35
- 238000003776 cleavage reaction Methods 0.000 claims description 22
- 230000007017 scission Effects 0.000 claims description 22
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 238000011065 in-situ storage Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35999810P | 2010-06-30 | 2010-06-30 | |
| US61/359,998 | 2010-06-30 | ||
| PCT/IB2011/052903 WO2012001659A2 (en) | 2010-06-30 | 2011-06-30 | Methods for in-situ passivation of silicon-on-insulator wafers |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013534731A JP2013534731A (ja) | 2013-09-05 |
| JP2013534731A5 true JP2013534731A5 (enExample) | 2014-08-14 |
| JP5989642B2 JP5989642B2 (ja) | 2016-09-07 |
Family
ID=44653366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013517642A Active JP5989642B2 (ja) | 2010-06-30 | 2011-06-30 | シリコン・オン・インシュレータウエハをインサイチュで不導体化する方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8859393B2 (enExample) |
| EP (1) | EP2589075A2 (enExample) |
| JP (1) | JP5989642B2 (enExample) |
| KR (3) | KR102083688B1 (enExample) |
| CN (1) | CN102959697A (enExample) |
| SG (1) | SG186853A1 (enExample) |
| TW (1) | TW201216414A (enExample) |
| WO (1) | WO2012001659A2 (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102427097B (zh) * | 2011-11-23 | 2014-05-07 | 中国科学院物理研究所 | 一种硅的氧化钝化方法及钝化装置 |
| US8747598B2 (en) | 2012-04-25 | 2014-06-10 | Gtat Corporation | Method of forming a permanently supported lamina |
| KR102294812B1 (ko) | 2014-01-23 | 2021-08-31 | 글로벌웨이퍼스 씨오., 엘티디. | 고 비저항 soi 웨이퍼 및 그 제조 방법 |
| US9853133B2 (en) * | 2014-09-04 | 2017-12-26 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity silicon-on-insulator substrate |
| US9899499B2 (en) | 2014-09-04 | 2018-02-20 | Sunedison Semiconductor Limited (Uen201334164H) | High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss |
| US10381260B2 (en) | 2014-11-18 | 2019-08-13 | GlobalWafers Co., Inc. | Method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers |
| EP3221885B1 (en) | 2014-11-18 | 2019-10-23 | GlobalWafers Co., Ltd. | High resistivity semiconductor-on-insulator wafer and a method of manufacturing |
| WO2016081367A1 (en) | 2014-11-18 | 2016-05-26 | Sunedison Semiconductor Limited | HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING A CHARGE TRAPPING LAYER FORMED BY He-N2 CO-IMPLANTATION |
| EP4120320A1 (en) | 2015-03-03 | 2023-01-18 | GlobalWafers Co., Ltd. | Charge trapping polycrystalline silicon films on silicon substrates with controllable film stress |
| WO2016149113A1 (en) | 2015-03-17 | 2016-09-22 | Sunedison Semiconductor Limited | Thermally stable charge trapping layer for use in manufacture of semiconductor-on-insulator structures |
| US9881832B2 (en) | 2015-03-17 | 2018-01-30 | Sunedison Semiconductor Limited (Uen201334164H) | Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof |
| US10332782B2 (en) | 2015-06-01 | 2019-06-25 | Globalwafers Co., Ltd. | Method of manufacturing silicon germanium-on-insulator |
| US10304722B2 (en) | 2015-06-01 | 2019-05-28 | Globalwafers Co., Ltd. | Method of manufacturing semiconductor-on-insulator |
| CN108780776B (zh) | 2015-11-20 | 2023-09-29 | 环球晶圆股份有限公司 | 使半导体表面平整的制造方法 |
| US10468294B2 (en) | 2016-02-19 | 2019-11-05 | Globalwafers Co., Ltd. | High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed on a substrate with a rough surface |
| US9831115B2 (en) | 2016-02-19 | 2017-11-28 | Sunedison Semiconductor Limited (Uen201334164H) | Process flow for manufacturing semiconductor on insulator structures in parallel |
| WO2017142849A1 (en) | 2016-02-19 | 2017-08-24 | Sunedison Semiconductor Limited | Semiconductor on insulator structure comprising a buried high resistivity layer |
| US11114332B2 (en) | 2016-03-07 | 2021-09-07 | Globalwafers Co., Ltd. | Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof |
| WO2017155806A1 (en) | 2016-03-07 | 2017-09-14 | Sunedison Semiconductor Limited | Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof |
| US10593748B2 (en) | 2016-03-07 | 2020-03-17 | Globalwafers Co., Ltd. | Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof |
| US11848227B2 (en) | 2016-03-07 | 2023-12-19 | Globalwafers Co., Ltd. | Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment |
| CN111201341B (zh) | 2016-06-08 | 2023-04-04 | 环球晶圆股份有限公司 | 具有经改进的机械强度的高电阻率单晶硅锭及晶片 |
| US10269617B2 (en) | 2016-06-22 | 2019-04-23 | Globalwafers Co., Ltd. | High resistivity silicon-on-insulator substrate comprising an isolation region |
| JP6831911B2 (ja) | 2016-10-26 | 2021-02-17 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板 |
| JP6801105B2 (ja) | 2016-12-05 | 2020-12-16 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | 高抵抗シリコンオンインシュレータ構造及びその製造方法 |
| KR102306730B1 (ko) | 2016-12-28 | 2021-09-30 | 썬에디슨 세미컨덕터 리미티드 | 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법 |
| FR3061988B1 (fr) * | 2017-01-13 | 2019-11-01 | Soitec | Procede de lissage de surface d'un substrat semiconducteur sur isolant |
| CN117038572A (zh) | 2017-07-14 | 2023-11-10 | 太阳能爱迪生半导体有限公司 | 绝缘体上半导体结构的制造方法 |
| US10916416B2 (en) * | 2017-11-14 | 2021-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor wafer with modified surface and fabrication method thereof |
| EP3785293B1 (en) | 2018-04-27 | 2023-06-07 | GlobalWafers Co., Ltd. | Light assisted platelet formation facilitating layer transfer from a semiconductor donor substrate |
| KR102463727B1 (ko) | 2018-06-08 | 2022-11-07 | 글로벌웨이퍼스 씨오., 엘티디. | 얇은 실리콘 층의 전사 방법 |
| US11296277B2 (en) | 2018-10-16 | 2022-04-05 | Samsung Electronics Co., Ltd. | Variable resistance memory device having an anti-oxidation layer and a method of manufacturing the same |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3836786A (en) * | 1967-01-04 | 1974-09-17 | Purification Sciences Inc | Dielectric liquid-immersed corona generator |
| CA1030102A (en) | 1972-08-17 | 1978-04-25 | Purification Sciences Inc. | Dielectric liquid-immersed corona generator |
| US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
| JPH07118522B2 (ja) * | 1990-10-24 | 1995-12-18 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 基板表面を酸化処理するための方法及び半導体の構造 |
| JPH05259153A (ja) * | 1992-03-12 | 1993-10-08 | Fujitsu Ltd | シリコン酸化膜の製造方法と製造装置 |
| JPH0766195A (ja) * | 1993-06-29 | 1995-03-10 | Sumitomo Sitix Corp | シリコンウェーハの表面酸化膜形成方法 |
| CN1104264A (zh) * | 1994-09-02 | 1995-06-28 | 复旦大学 | 热壁密装低温低压淀积二氧化硅薄膜技术 |
| US5880029A (en) * | 1996-12-27 | 1999-03-09 | Motorola, Inc. | Method of passivating semiconductor devices and the passivated devices |
| US5972802A (en) * | 1997-10-07 | 1999-10-26 | Seh America, Inc. | Prevention of edge stain in silicon wafers by ozone dipping |
| JP3153162B2 (ja) * | 1997-10-08 | 2001-04-03 | 松下電子工業株式会社 | シリコン酸化膜の形成方法 |
| JP4379943B2 (ja) * | 1999-04-07 | 2009-12-09 | 株式会社デンソー | 半導体基板の製造方法および半導体基板製造装置 |
| US20020175143A1 (en) * | 2001-05-22 | 2002-11-28 | Seh America, Inc. | Processes for polishing wafers |
| US6833322B2 (en) | 2002-10-17 | 2004-12-21 | Applied Materials, Inc. | Apparatuses and methods for depositing an oxide film |
| JP4614416B2 (ja) | 2003-05-29 | 2011-01-19 | 日東電工株式会社 | 半導体チップの製造方法およびダイシング用シート貼付け装置 |
| JP2007149723A (ja) * | 2005-11-24 | 2007-06-14 | Sumco Corp | 貼り合わせウェーハの製造方法 |
| US7939424B2 (en) * | 2007-09-21 | 2011-05-10 | Varian Semiconductor Equipment Associates, Inc. | Wafer bonding activated by ion implantation |
| SG161151A1 (en) | 2008-10-22 | 2010-05-27 | Semiconductor Energy Lab | Soi substrate and method for manufacturing the same |
| EP2368264A1 (en) | 2008-11-26 | 2011-09-28 | MEMC Electronic Materials, Inc. | Method for processing a silicon-on-insulator structure |
-
2011
- 2011-06-16 US US13/162,122 patent/US8859393B2/en active Active
- 2011-06-30 EP EP11757935.9A patent/EP2589075A2/en not_active Withdrawn
- 2011-06-30 JP JP2013517642A patent/JP5989642B2/ja active Active
- 2011-06-30 KR KR1020137002599A patent/KR102083688B1/ko active Active
- 2011-06-30 TW TW100123193A patent/TW201216414A/zh unknown
- 2011-06-30 KR KR1020187009456A patent/KR20180037326A/ko not_active Ceased
- 2011-06-30 WO PCT/IB2011/052903 patent/WO2012001659A2/en not_active Ceased
- 2011-06-30 CN CN2011800328260A patent/CN102959697A/zh active Pending
- 2011-06-30 SG SG2012096020A patent/SG186853A1/en unknown
- 2011-06-30 KR KR1020197020821A patent/KR20190087668A/ko not_active Ceased
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