ATE524824T1 - Verfahren zur wiederherstellung der ätzrate und der ätzeinheitlichkeit bei siliziumelektrodenanordnungen - Google Patents

Verfahren zur wiederherstellung der ätzrate und der ätzeinheitlichkeit bei siliziumelektrodenanordnungen

Info

Publication number
ATE524824T1
ATE524824T1 AT05854136T AT05854136T ATE524824T1 AT E524824 T1 ATE524824 T1 AT E524824T1 AT 05854136 T AT05854136 T AT 05854136T AT 05854136 T AT05854136 T AT 05854136T AT E524824 T1 ATE524824 T1 AT E524824T1
Authority
AT
Austria
Prior art keywords
restoring
uniformity
etch rate
silicon electrode
electrode arrangements
Prior art date
Application number
AT05854136T
Other languages
English (en)
Inventor
Tuochuan Huang
Daxing Ren
Hong Shih
Catherine Zhou
Chun Yan
Enrico Magni
Bi Yen
Jerome Hubacek
Dae Lim
Dougyong Sung
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE524824T1 publication Critical patent/ATE524824T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32605—Removable or replaceable electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/003—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods using material which dissolves or changes phase after the treatment, e.g. ice, CO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Weting (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning By Liquid Or Steam (AREA)
AT05854136T 2004-12-23 2005-12-15 Verfahren zur wiederherstellung der ätzrate und der ätzeinheitlichkeit bei siliziumelektrodenanordnungen ATE524824T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/019,729 US7442114B2 (en) 2004-12-23 2004-12-23 Methods for silicon electrode assembly etch rate and etch uniformity recovery
PCT/US2005/045361 WO2006071544A2 (en) 2004-12-23 2005-12-15 Methods for silicon electrode assembly etch rate and etch uniformity recovery

Publications (1)

Publication Number Publication Date
ATE524824T1 true ATE524824T1 (de) 2011-09-15

Family

ID=36610172

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05854136T ATE524824T1 (de) 2004-12-23 2005-12-15 Verfahren zur wiederherstellung der ätzrate und der ätzeinheitlichkeit bei siliziumelektrodenanordnungen

Country Status (8)

Country Link
US (1) US7442114B2 (de)
EP (1) EP1848597B1 (de)
JP (1) JP5059620B2 (de)
KR (1) KR101264448B1 (de)
CN (1) CN101137461A (de)
AT (1) ATE524824T1 (de)
TW (1) TWI385723B (de)
WO (1) WO2006071544A2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7854820B2 (en) * 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
US8702866B2 (en) 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
US8171877B2 (en) * 2007-03-14 2012-05-08 Lam Research Corporation Backside mounted electrode carriers and assemblies incorporating the same
US7767028B2 (en) * 2007-03-14 2010-08-03 Lam Research Corporation Cleaning hardware kit for composite showerhead electrode assemblies for plasma processing apparatuses
US8221552B2 (en) * 2007-03-30 2012-07-17 Lam Research Corporation Cleaning of bonded silicon electrodes
US8292698B1 (en) 2007-03-30 2012-10-23 Lam Research Corporation On-line chamber cleaning using dry ice blasting
US7578889B2 (en) * 2007-03-30 2009-08-25 Lam Research Corporation Methodology for cleaning of surface metal contamination from electrode assemblies
US7736441B2 (en) * 2007-10-09 2010-06-15 Lam Research Corporation Cleaning fixtures and methods of cleaning electrode assembly plenums
US8075701B2 (en) 2008-06-30 2011-12-13 Lam Research Corporation Processes for reconditioning multi-component electrodes
US8276604B2 (en) * 2008-06-30 2012-10-02 Lam Research Corporation Peripherally engaging electrode carriers and assemblies incorporating the same
US20100140222A1 (en) * 2008-12-10 2010-06-10 Sun Jennifer Y Filled polymer composition for etch chamber component
TWI403368B (zh) * 2008-12-10 2013-08-01 Lam Res Corp 用於清洗矽電極沉浸式氧化及蝕刻方法
JP5896915B2 (ja) * 2009-12-18 2016-03-30 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマチャンバで使用される上方電極から表面金属汚染を洗浄するための方法
CN102420132B (zh) * 2011-05-26 2013-12-04 上海华力微电子有限公司 一种去除NiPt金属硅化物的方法
US9293305B2 (en) 2011-10-31 2016-03-22 Lam Research Corporation Mixed acid cleaning assemblies
CN102969256B (zh) * 2012-11-12 2015-06-17 上海华力微电子有限公司 蚀刻机台上电极黑硅的侦测方法
US8893702B2 (en) * 2013-02-20 2014-11-25 Lam Research Corporation Ductile mode machining methods for hard and brittle components of plasma processing apparatuses
US10391526B2 (en) 2013-12-12 2019-08-27 Lam Research Corporation Electrostatic chuck cleaning fixture
JP5944883B2 (ja) * 2013-12-18 2016-07-05 東京エレクトロン株式会社 粒子逆流防止部材及び基板処理装置
CN108231572A (zh) * 2016-12-21 2018-06-29 有研半导体材料有限公司 一种用于硅电极腐蚀的方法
US11776822B2 (en) * 2018-05-29 2023-10-03 Applied Materials, Inc. Wet cleaning of electrostatic chuck
WO2020096091A1 (ko) * 2018-11-09 2020-05-14 주식회사 그리너지 리튬메탈 음극의 표면처리방법, 표면처리된 리튬메탈 음극 및 이를 포함하는 리튬금속전지
CN109262377B (zh) * 2018-11-15 2019-09-03 首都师范大学 用于钝化CsI(TI)晶体表面缺陷的抛光工艺
CN111900070A (zh) * 2020-07-16 2020-11-06 上海富乐德智能科技发展有限公司 半导体高阶制程蚀刻装置硅部件的再生清洗和返修方法

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US5622875A (en) * 1994-05-06 1997-04-22 Kobe Precision, Inc. Method for reclaiming substrate from semiconductor wafers
JPH08274069A (ja) * 1995-03-30 1996-10-18 Sumitomo Sitix Corp プラズマエッチング装置用シリコン電極装置
US6004400A (en) * 1997-07-09 1999-12-21 Phillip W. Bishop Carbon dioxide cleaning process
US6284345B1 (en) * 1997-12-08 2001-09-04 Washington University Designer particles of micron and submicron dimension
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JP3876167B2 (ja) * 2002-02-13 2007-01-31 川崎マイクロエレクトロニクス株式会社 洗浄方法および半導体装置の製造方法
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US6761625B1 (en) * 2003-05-20 2004-07-13 Intel Corporation Reclaiming virgin test wafers

Also Published As

Publication number Publication date
TW200641991A (en) 2006-12-01
JP5059620B2 (ja) 2012-10-24
EP1848597B1 (de) 2011-09-14
WO2006071544A2 (en) 2006-07-06
EP1848597A4 (de) 2010-04-14
US20060138081A1 (en) 2006-06-29
JP2008525205A (ja) 2008-07-17
WO2006071544A3 (en) 2007-08-16
TWI385723B (zh) 2013-02-11
KR20070089246A (ko) 2007-08-30
EP1848597A2 (de) 2007-10-31
US7442114B2 (en) 2008-10-28
CN101137461A (zh) 2008-03-05
KR101264448B1 (ko) 2013-05-14

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