WO2009057395A1 - 酸化膜除去のための基板洗浄処理方法 - Google Patents

酸化膜除去のための基板洗浄処理方法 Download PDF

Info

Publication number
WO2009057395A1
WO2009057395A1 PCT/JP2008/067016 JP2008067016W WO2009057395A1 WO 2009057395 A1 WO2009057395 A1 WO 2009057395A1 JP 2008067016 W JP2008067016 W JP 2008067016W WO 2009057395 A1 WO2009057395 A1 WO 2009057395A1
Authority
WO
WIPO (PCT)
Prior art keywords
radical
processing chamber
plasma
oxide film
substrate surface
Prior art date
Application number
PCT/JP2008/067016
Other languages
English (en)
French (fr)
Inventor
Takuya Seino
Manabu Ikemoto
Kimiko Mashimo
Original Assignee
Canon Anelva Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corporation filed Critical Canon Anelva Corporation
Priority to CN2008801209341A priority Critical patent/CN101919030B/zh
Priority to KR1020080127011A priority patent/KR101503412B1/ko
Publication of WO2009057395A1 publication Critical patent/WO2009057395A1/ja
Priority to US12/765,922 priority patent/US20100255667A1/en
Priority to US15/161,892 priority patent/US10083830B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

プラズマによって生成したラジカルを、プラズマ生成室（１０８）と処理室を分離する隔壁板に設けられた複数の孔（１１１）から処理室に導入し、別途処理室に導入した処理ガスとこのラジカルを混合することで、上記ラジカルの励起エネルギーを抑制し、これによりSiと高い選択性を持った基板表面処理が可能となるため、基板表面の平坦性を損なうことなく自然酸化膜や有機物を除去する表面処理が可能となることが見出された。プラズマ中のラジカルをプラズマ分離用のプラズマ閉じ込め電極板（１１０）のラジカル通過孔（１１１）を通して処理室に導入し、処理室に処理ガスを導入して処理室（１２１）内でラジカルと混合し、そしてラジカルと処理ガスとの混合雰囲気により基板表面を洗浄する。
PCT/JP2008/067016 2007-11-02 2008-09-19 酸化膜除去のための基板洗浄処理方法 WO2009057395A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2008801209341A CN101919030B (zh) 2007-11-02 2008-09-19 基板清洗设备及方法、在mos结构中形成栅极绝缘膜的方法
KR1020080127011A KR101503412B1 (ko) 2007-11-02 2008-12-15 산화막 제거를 위한 기판세정 처리방법
US12/765,922 US20100255667A1 (en) 2007-11-02 2010-04-23 Substrate cleaning method for removing oxide film
US15/161,892 US10083830B2 (en) 2007-11-02 2016-05-23 Substrate cleaning method for removing oxide film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2007/071393 WO2009057223A1 (ja) 2007-11-02 2007-11-02 表面処理装置およびその基板処理方法
JPPCT/JP2007/071393 2007-11-02

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/765,922 Continuation US20100255667A1 (en) 2007-11-02 2010-04-23 Substrate cleaning method for removing oxide film

Publications (1)

Publication Number Publication Date
WO2009057395A1 true WO2009057395A1 (ja) 2009-05-07

Family

ID=40590632

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2007/071393 WO2009057223A1 (ja) 2007-11-02 2007-11-02 表面処理装置およびその基板処理方法
PCT/JP2008/067016 WO2009057395A1 (ja) 2007-11-02 2008-09-19 酸化膜除去のための基板洗浄処理方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/071393 WO2009057223A1 (ja) 2007-11-02 2007-11-02 表面処理装置およびその基板処理方法

Country Status (5)

Country Link
US (3) US20100221895A1 (ja)
JP (1) JP5006938B2 (ja)
KR (1) KR101503412B1 (ja)
CN (2) CN101971298A (ja)
WO (2) WO2009057223A1 (ja)

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102310063A (zh) * 2010-06-29 2012-01-11 中国科学院微电子研究所 蜂窝形状等离子体自由基清洗系统
JP5955062B2 (ja) * 2011-04-25 2016-07-20 東京エレクトロン株式会社 プラズマ処理装置
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
CN203237432U (zh) * 2012-12-24 2013-10-16 鸿准精密模具（昆山）有限公司 贴膜机构
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US10297442B2 (en) 2013-05-31 2019-05-21 Lam Research Corporation Remote plasma based deposition of graded or multi-layered silicon carbide film
US9371579B2 (en) * 2013-10-24 2016-06-21 Lam Research Corporation Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films
CN103681244B (zh) * 2013-12-25 2016-09-14 深圳市华星光电技术有限公司 低温多晶硅薄膜的制备方法及其制作系统
KR101550526B1 (ko) * 2014-02-21 2015-09-04 에스티에스반도체통신 주식회사 클러스터형 반도체 제조장치 및 이를 이용한 반도체 소자 제조방법
CN105097423B (zh) * 2014-05-12 2018-09-18 中芯国际集成电路制造(上海)有限公司 等离子体反应器及清除等离子体反应腔室颗粒污染的方法
JP2016066641A (ja) * 2014-09-22 2016-04-28 株式会社東芝 半導体装置及び半導体装置の製造方法
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
JP6564642B2 (ja) * 2015-07-23 2019-08-21 東京エレクトロン株式会社 基板搬送室、基板処理システム、及び基板搬送室内のガス置換方法
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) * 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
CN109643638B (zh) * 2016-09-16 2023-09-05 应用材料公司 用于在低于7纳米cmos制造中控制砷脱气的紫外线辐射系统与方法
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10002787B2 (en) 2016-11-23 2018-06-19 Lam Research Corporation Staircase encapsulation in 3D NAND fabrication
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
KR20180096853A (ko) * 2017-02-20 2018-08-30 삼성디스플레이 주식회사 박막 증착 장치
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
CN108668422B (zh) * 2017-03-30 2021-06-08 北京北方华创微电子装备有限公司 一种等离子体产生腔室和等离子体处理装置
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
JP6902941B2 (ja) * 2017-06-29 2021-07-14 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US11097907B2 (en) * 2017-07-10 2021-08-24 Tokyo Electron Limited Substrate transfer device and substrate transfer method
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US20190093214A1 (en) * 2017-09-22 2019-03-28 Applied Materials, Inc. Native or uncontrolled oxide reduction by a cyclic process of plasma treatment and h* radicals
JP2019075517A (ja) * 2017-10-19 2019-05-16 東京エレクトロン株式会社 処理装置及び拡散路を有する部材
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
JP6556822B2 (ja) * 2017-12-26 2019-08-07 キヤノントッキ株式会社 基板処理方法、基板処理装置、及び、成膜装置
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
CN108346561B (zh) * 2018-02-09 2020-12-22 信利（惠州）智能显示有限公司 栅极绝缘层成膜前的多晶硅层处理方法及处理系统
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10943768B2 (en) * 2018-04-20 2021-03-09 Applied Materials, Inc. Modular high-frequency source with integrated gas distribution
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10840087B2 (en) 2018-07-20 2020-11-17 Lam Research Corporation Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride films
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
KR20230085953A (ko) 2018-10-19 2023-06-14 램 리써치 코포레이션 갭 충진 (gapfill) 을 위한 도핑되거나 도핑되지 않은 실리콘 카바이드 증착 및 원격 수소 플라즈마 노출
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11355620B2 (en) 2018-10-31 2022-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of forming same
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11217672B2 (en) * 2019-08-30 2022-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a source/drain
CN110993467B (zh) * 2019-12-10 2022-07-01 南京三乐集团有限公司 一种微波真空电子器件用阴极的复式表面处理方法
CN112692463A (zh) * 2021-03-25 2021-04-23 快克智能装备股份有限公司 一种电子装联焊接工艺

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07307332A (ja) * 1994-05-10 1995-11-21 Nippon Telegr & Teleph Corp <Ntt> 表面清浄化法および薄膜形成法
JPH10172957A (ja) * 1996-12-09 1998-06-26 Central Glass Co Ltd 酸化膜のドライエッチングガス及びそのエッチング方法及びシリコンのクリーニング方法
JP2004063520A (ja) * 2002-07-25 2004-02-26 Hitachi Ltd ドライ洗浄装置及びドライ洗浄方法
JP2007273752A (ja) * 2006-03-31 2007-10-18 Mitsui Eng & Shipbuild Co Ltd プラズマ処理装置およびプラズマ生成装置

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066823A (ja) * 1983-09-22 1985-04-17 Semiconductor Energy Lab Co Ltd 半導体エッチング方法
US5089441A (en) * 1990-04-16 1992-02-18 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafers
JPH0496226A (ja) 1990-08-03 1992-03-27 Fujitsu Ltd 半導体装置の製造方法
DE4029268C2 (de) * 1990-09-14 1995-07-06 Balzers Hochvakuum Verfahren zur gleichspannungs-bogenentladungs-unterstützten, reaktiven Behandlung von Gut und Vakuumbehandlungsanlage zur Durchführung
JPH06120181A (ja) * 1992-10-05 1994-04-28 Hitachi Ltd 半導体製造方法および装置
JPH06236850A (ja) * 1993-02-10 1994-08-23 Sony Corp プラズマ処理装置
JP2804700B2 (ja) * 1993-03-31 1998-09-30 富士通株式会社 半導体装置の製造装置及び半導体装置の製造方法
JPH10147877A (ja) 1996-11-19 1998-06-02 Kokusai Electric Co Ltd ガスクリーニング方法
US6107192A (en) * 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
US6892669B2 (en) * 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
WO2000070117A1 (en) * 1999-05-14 2000-11-23 The Regents Of The University Of California Low-temperature compatible wide-pressure-range plasma flow device
JP3317935B2 (ja) 1999-09-01 2002-08-26 九州日本電気株式会社 プラズマ処理装置
US6313042B1 (en) 1999-09-03 2001-11-06 Applied Materials, Inc. Cleaning contact with successive fluorine and hydrogen plasmas
JP4378806B2 (ja) 1999-09-28 2009-12-09 日本電気株式会社 Ｃｖｄ装置およびその基板洗浄方法
JP3366301B2 (ja) * 1999-11-10 2003-01-14 日本電気株式会社 プラズマｃｖｄ装置
JP2001164371A (ja) * 1999-12-07 2001-06-19 Nec Corp プラズマｃｖｄ装置およびプラズマｃｖｄ成膜法
US8173783B2 (en) 2000-12-08 2012-05-08 Good Biotech Corporation Process for selectively isolating IgY antibodies from egg yolk of an anseriform bird and IgY antibodies obtained thereby
US7111629B2 (en) * 2001-01-08 2006-09-26 Apl Co., Ltd. Method for cleaning substrate surface
US20020124867A1 (en) * 2001-01-08 2002-09-12 Apl Co., Ltd. Apparatus and method for surface cleaning using plasma
JP4016598B2 (ja) 2001-01-16 2007-12-05 株式会社日立製作所 半導体装置の製造方法
JP3989286B2 (ja) * 2002-04-26 2007-10-10 株式会社ルネサステクノロジ 半導体装置の製造方法
US6713402B2 (en) * 2002-05-31 2004-03-30 Texas Instruments Incorporated Methods for polymer removal following etch-stop layer etch
JP3997859B2 (ja) * 2002-07-25 2007-10-24 株式会社日立製作所 半導体装置の製造方法および製造装置
JP2004128281A (ja) * 2002-10-03 2004-04-22 Tokyo Electron Ltd 基板処理方法および基板処理装置
US6921703B2 (en) * 2003-05-13 2005-07-26 Texas Instruments Incorporated System and method for mitigating oxide growth in a gate dielectric
JP4115337B2 (ja) 2003-05-30 2008-07-09 俊夫 後藤 プラズマ処理装置
JP2005064120A (ja) 2003-08-08 2005-03-10 Shibaura Mechatronics Corp プラズマ処理装置およびプラズマ処理方法
US20050211171A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Chemical vapor deposition plasma reactor having an ion shower grid
US20050223986A1 (en) * 2004-04-12 2005-10-13 Choi Soo Y Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
EP1586674A1 (en) * 2004-04-14 2005-10-19 Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO Coatings, and methods and devices for the manufacture thereof
US7381291B2 (en) * 2004-07-29 2008-06-03 Asm Japan K.K. Dual-chamber plasma processing apparatus
JP2006049544A (ja) * 2004-08-04 2006-02-16 Canon Anelva Corp 基板処理装置及びこれを用いた基板処理方法
EP1758171A4 (en) * 2005-03-04 2009-04-29 Sumitomo Electric Industries VERTICAL GALLIUM NITRIDE SEMICONDUCTOR ELEMENT AND EPITACTIC SUBSTRATE
US7432201B2 (en) * 2005-07-19 2008-10-07 Applied Materials, Inc. Hybrid PVD-CVD system
JP2008072029A (ja) 2006-09-15 2008-03-27 Sumitomo Chemical Co Ltd 半導体エピタキシャル結晶基板の製造方法
JP2008112750A (ja) 2006-10-27 2008-05-15 Furukawa Electric Co Ltd:The 半導体素子製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07307332A (ja) * 1994-05-10 1995-11-21 Nippon Telegr & Teleph Corp <Ntt> 表面清浄化法および薄膜形成法
JPH10172957A (ja) * 1996-12-09 1998-06-26 Central Glass Co Ltd 酸化膜のドライエッチングガス及びそのエッチング方法及びシリコンのクリーニング方法
JP2004063520A (ja) * 2002-07-25 2004-02-26 Hitachi Ltd ドライ洗浄装置及びドライ洗浄方法
JP2007273752A (ja) * 2006-03-31 2007-10-18 Mitsui Eng & Shipbuild Co Ltd プラズマ処理装置およびプラズマ生成装置

Also Published As

Publication number Publication date
US20100255667A1 (en) 2010-10-07
US10083830B2 (en) 2018-09-25
JP5006938B2 (ja) 2012-08-22
KR20100033328A (ko) 2010-03-29
US20160343565A1 (en) 2016-11-24
CN101919030B (zh) 2012-07-04
WO2009057223A1 (ja) 2009-05-07
JPWO2009057223A1 (ja) 2011-03-10
CN101971298A (zh) 2011-02-09
CN101919030A (zh) 2010-12-15
KR101503412B1 (ko) 2015-03-17
US20100221895A1 (en) 2010-09-02

Similar Documents

Publication Publication Date Title
WO2009057395A1 (ja) 酸化膜除去のための基板洗浄処理方法
TW200634925A (en) Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
TW200614365A (en) Method for providing uniform removal of organic material
WO2009114120A3 (en) Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
WO2006028858A3 (en) Methods of removing photoresist on substrates
TW200641991A (en) Methods for silicon electrode assembly etch rate and etch uniformity recovery
WO2012018375A3 (en) Plasma mediated ashing processes
TW200709293A (en) Method and composition for polishing a substrate
WO2007038514A3 (en) Apparatus and method for substrate edge etching
TW200502718A (en) Methods of removing photoresist from substrates
TW200712259A (en) A method for etching high dielectric constant materials
WO2009125951A3 (en) Plasma processing apparatus and method for plasma processing
WO2005114715A8 (en) Method for cleaning substrate surface
WO2008146834A1 (ja) レジスト除去方法、半導体製造方法、及びレジスト除去装置
TW200509227A (en) Plasma processing system and cleaning method for the same
TW200600609A (en) Method and apparatus for stable plasma processing
TW200633600A (en) Method and apparatus for improved baffle plate
TW200715405A (en) Method and apparatus for photomask plasma etching
TW200644123A (en) Methods of removing resist from substrates in resist stripping chambers
WO2009003552A3 (de) Behandlungssystem für flache substrate
WO2004066365A3 (en) Cleaning of cvd chambers using remote source with cxfyoz based chemistry
WO2006038990A3 (en) Method for treating a substrate
TW200715412A (en) Method and apparatus for forming metal film
WO2004095502A3 (en) Plasma processing system and method
SG136917A1 (en) Method for removing masking materials with reduced low-k dielectric material damage

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880120934.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08845671

Country of ref document: EP

Kind code of ref document: A1

DPE2 Request for preliminary examination filed before expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08845671

Country of ref document: EP

Kind code of ref document: A1