JP6902941B2 - プラズマ処理方法およびプラズマ処理装置 - Google Patents
プラズマ処理方法およびプラズマ処理装置 Download PDFInfo
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Description
図1は、プラズマ処理装置100の一例を示す図である。プラズマ処理装置100は、本体10および制御部20を有する。本実施例におけるプラズマ処理装置100は、被処理基板の一例である半導体ウエハW上に形成された有機膜を、ICP(Inductively Coupled Plasma)を用いてアッシング処理する。本実施例において、半導体ウエハWには、例えば配線となる金属層が形成されている。
ここで、比較例におけるプラズマ処理について説明する。図2は、比較例におけるプラズマ処理の一例を示すフローチャートである。以下では、比較例におけるプラズマ処理が図1に示したプラズマ処理装置100を用いて行われる場合について説明する。
次に、比較例においてアッシング処理が行われた後の上部天板102の厚さを測定した。比較例では、約10000枚の半導体ウエハWについてH2プラズマを用いたアッシング処理が行われた。図3は、厚さが測定された上部天板102の位置を示す図である。図3は、上部天板102の下面(即ち空間S1側)を示している。例えば図3に示すように、(1)〜(25)の合計25カ所において、約10000枚の半導体ウエハWについてH2プラズマを用いたアッシング処理を行った後の上部天板102の厚さを測定した。なお、図3における(26)〜(33)の各位置は、処理室104の側壁104aの上端に接触している部分であり(図1参照)、空間S1内のH2プラズマに晒されていない部分である。
次に、本実施例におけるプラズマ処理の一例について説明する。図8は、実施例におけるプラズマ処理の一例を示すフローチャートである。
図9は、H2プラズマの累積時間に対するパーティクルの個数の一例を示す図である。例えば図9に示すように、O2プラズマにより処理を行わない比較例では、全般的に本実施例よりもパーティクルの数が多い。また、比較例では、H2プラズマの累積時間が長くなるほどパーティクル数が多くなる傾向にある。
次に、H2プラズマの処理時間T1の累積時間Tと、O2プラズマの処理時間T2との関係について、実験を行った。累積時間Tとは、O2プラズマの処理と次のO2プラズマの処理との間で行われるH2プラズマの処理時間T1の累積時間である。また、処理時間T2とは、図8に示したステップS208において行われるO2プラズマの1回あたりの処理時間である。なお、以下では、H2プラズマの処理時間T1の累積時間Tに対する、O2プラズマの処理時間T2の比率を、単に処理時間の比率と記載する。
図12は、制御部20のハードウェアの一例を示す図である。制御部20は、例えば図12に示すように、CPU21、RAM22、ROM23、補助記憶装置24、通信インターフェイス(I/F)25、入出力インターフェイス(I/F)26、およびメディアインターフェイス(I/F)27を備える。
なお、本発明は、上記した実施例に限定されるものではなく、その要旨の範囲内で数々の変形が可能である。
W 半導体ウエハ
100 プラズマ処理装置
10 本体
101 チャンバ
102 上部天板
103 アンテナ室
104 処理室
111 イオントラップ
113 アンテナ
120 ガス供給機構
121 ガス供給源
122 MFC
123 バルブ
160 排気機構
20 制御部
Claims (7)
- チャンバ内に搬入された被処理基板に対して水素含有ガスのプラズマを用いて所定の処理を行い、処理後の前記被処理基板を前記チャンバ内から搬出する基板処理工程と、
前記基板処理工程が少なくとも1回行われた後に、前記チャンバ内の部材の表面を酸素含有ガスのプラズマで処理するチャンバ内処理工程と、
前記チャンバ内処理工程の後、再び前記基板処理工程が行われる前に、前記チャンバ内で水素含有ガスのプラズマを生成する準備工程と
を含み、
少なくとも1回の前記基板処理工程と、前記チャンバ内処理工程とは、交互に実行され、
前記チャンバ内処理工程と次の前記チャンバ内処理工程との間に行われる前記基板処理工程において前記水素含有ガスのプラズマを用いて行われる前記所定の処理の累積時間に対する、1回の前記チャンバ内処理工程の処理時間の比率は20%以上であることを特徴とするプラズマ処理方法。 - 前記被処理基板の表面には有機物が付着しており、
前記基板処理工程では、前記水素含有ガスのプラズマを用いて、前記被処理基板の表面に付着している前記有機物が除去されることを特徴とする請求項1に記載のプラズマ処理方法。 - 前記チャンバ内処理工程と次の前記チャンバ内処理工程との間に行われる前記基板処理工程において前記水素含有ガスのプラズマを用いて行われる前記所定の処理の累積時間は1500秒以下であり、前記チャンバ内処理工程の処理時間は300秒以上であることを特徴とする請求項1または2に記載のプラズマ処理方法。
- 最初に行われる前記基板処理工程の前に、前記チャンバ内処理工程がさらに行われることを特徴とする請求項1から3のいずれか一項に記載のプラズマ処理方法。
- 前記水素含有ガスは、H2ガスまたはH2Oガスの少なくともいずれかを含むことを特徴とする請求項1から4のいずれか一項に記載のプラズマ処理方法。
- 酸素含有ガスは、O2ガス、COガス、CO2ガス、またはO3ガスの少なくともいずれかを含むことを特徴とする請求項1から5のいずれか一項に記載のプラズマ処理方法。
- チャンバと、
前記チャンバ内にガスを供給するガス供給部と、
前記チャンバ内に供給されたガスのプラズマを生成するプラズマ生成部と、
前記ガス供給部および前記プラズマ生成部を制御する制御部と
を備え、
前記制御部は、
前記チャンバ内に搬入された被処理基板に対して水素含有ガスのプラズマを用いて所定の処理を行い、処理後の前記被処理基板を前記チャンバ内から搬出する基板処理工程と、
前記基板処理工程が少なくとも1回行われた後に、前記チャンバ内の部材の表面を酸素含有ガスのプラズマで処理するチャンバ内処理工程と、
前記チャンバ内処理工程の後、再び前記基板処理工程が行われる前に、前記チャンバ内で水素含有ガスのプラズマを生成する準備工程と
を実行し、
少なくとも1回の前記基板処理工程と、前記チャンバ内処理工程とは、交互に実行され、
前記チャンバ内処理工程と次の前記チャンバ内処理工程との間に行われる前記基板処理工程において前記水素含有ガスのプラズマを用いて行われる前記所定の処理の累積時間に対する、1回の前記チャンバ内処理工程の処理時間の比率は20%以上であることを特徴とするプラズマ処理装置。
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