JP6284786B2 - プラズマ処理装置のクリーニング方法 - Google Patents
プラズマ処理装置のクリーニング方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 99
- 238000012545 processing Methods 0.000 title claims description 88
- 238000004140 cleaning Methods 0.000 title claims description 63
- 239000007789 gas Substances 0.000 claims description 128
- 230000008569 process Effects 0.000 claims description 69
- 238000005530 etching Methods 0.000 claims description 53
- 238000005108 dry cleaning Methods 0.000 claims description 41
- 239000000376 reactant Substances 0.000 claims description 27
- 239000007795 chemical reaction product Substances 0.000 claims description 18
- 238000001312 dry etching Methods 0.000 claims description 13
- 238000010926 purge Methods 0.000 claims description 10
- 238000007599 discharging Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000000356 contaminant Substances 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 105
- 239000004065 semiconductor Substances 0.000 description 45
- 239000010410 layer Substances 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 18
- 238000001020 plasma etching Methods 0.000 description 17
- 238000002474 experimental method Methods 0.000 description 16
- 238000011109 contamination Methods 0.000 description 14
- 238000012546 transfer Methods 0.000 description 14
- 238000012795 verification Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- -1 fluorine radicals Chemical class 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 235000011194 food seasoning agent Nutrition 0.000 description 4
- 230000001603 reducing effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Description
[装置全体の構成]
[実施形態におけるLow-k膜エッチング加工の一例]
[実施形態におけるLow-k膜エッチング加工の詳細内容]
[実施形態における作用効果(検証実験1)]
[実施例の処理条件]
チャンバ内の圧力:150mTorr,
高周波のパワー: HF=400W, LF=0W
クリーニングガス: H2/N2=100/300sccm
処理時間: 30秒
[比較例1の処理条件]
チャンバ内の圧力:20mTorr,
高周波のパワー: HF=0W, LF=0W
パージングガス: Ar=1000sccm
処理時間: 30秒
[比較例2の処理条件]
チャンバ内の圧力:20mTorr,
高周波のパワー: HF=0W, LF=0W
パージングガス: N2=1000sccm
処理時間: 30秒
[ウエハ無しクリーニング工程の処理条件]
チャンバ内の圧力:400mTorr,
高周波のパワー: HF=400W, LF=0W
クリーニングガス: O2=1500sccm
処理時間: 36秒
[実施形態における作用効果(検証実験2)]
C=100%×(B−A)/B ・・・・(1)
[実施形態における作用効果(検証実験3)]
[実施例1]
クリーニングガス: H2=400sccm
[実施例2]
クリーニングガス: H2/N2=100/300sccm
[実施例3]
クリーニングガス: H2/N2=200/200sccm
[比較例1]
クリーニングガス: CHF3/O2=23/1500sccm
[比較例2]
クリーニングガス: N2=400sccm
[比較例3]
クリーニングガス: Ar=800sccm
[共通の処理条件]
チャンバ内の圧力:150mTorr,
高周波のパワー: HF=400W, LF=0W
処理時間: 30秒
[他の実施形態又は変形例]
12 サセプタ(下部電極)
26 排気装置
30 第1高周波電源
32 第2高周波電源
40 静電チャック
60 シャワーヘッド(上部電極)
70 処理ガス供給部
82 制御部
Claims (8)
- プラズマ処理装置の処理容器内に残存するTi含有反応物を除去するためのクリーニング方法であって、
前記処理容器内を排気しながら、減圧状態の前記処理容器内にH2ガスとN2ガスを含む第1のクリーニングガスを導入し、前記第1のクリーニングガスを放電させてプラズマを生成し、前記プラズマのいずれかの活性種を前記Ti含有反応物と反応させて、その反応生成物を前記処理容器から排出する第1のドライクリーニング工程を有し、前記処理容器内で被エッチング材である絶縁層およびTiを含有するエッチングマスク層が積層された被処理体に対してCF系のエッチングガスを用いて行われるドライエッチング工程の終了後に、前記被処理体が未だ前記処理容器内に入っている状態の下で前記第1のドライクリーニング工程が行われる、
クリーニング方法。 - 前記絶縁層は、Low-k膜である、請求項1に記載のクリーニング方法。
- 前記処理容器内を定期的に清掃するために、前記処理容器内に被処理体の代わりに被処理体と同じ形状のダミー部材を配置し、前記処理容器内を排気しながら、減圧状態の前記処理容器内に第2のクリーニングガスを導入し、前記第2のクリーニングガスを放電させてプラズマを生成し、前記プラズマのいずれかの活性種を前記処理容器内の堆積物または汚染物質と反応させて、その反応生成物を前記処理容器から排出する第2のドライクリーニング工程を有し、
前記第2のドライクリーニング工程の終了後に、前記第1のドライクリーニング工程が行われる、
請求項1または請求項2に記載のクリーニング方法。 - 前記第1のドライクリーニング工程の終了後に、前記被処理体を前記処理容器から搬出し、被処理体が入っていない前記処理容器内を排気しながら、減圧状態の前記処理容器内に第3のクリーニングガスを導入し、前記第3のクリーニングガスを放電させてプラズマを生成し、前記プラズマのいずれかの活性種を前記処理容器内の堆積物または汚染物質と反応させて、その反応生成物を前記処理容器から排出する第3のドライクリーニング工程を有する、請求項1〜3のいずれか一項に記載のクリーニング方法。
- 前記第2のクリーニングガスはO2ガスを含む、請求項4に記載のクリーニング方法。
- 前記第1のドライクリーニング工程に先立って、前記処理容器内にプラズマを発生せずに不活性ガスを流して前記処理容器内を換気する第1のパージング工程を有する、請求項1〜5のいずれか一項に記載のクリーニング方法。
- 前記第1のドライクリーニング工程の終了直後に、前記処理容器内にプラズマを生成せずに不活性ガスを流して前記処理容器内を換気する第2のパージング工程を有する、請求項1〜6のいずれか一項に記載のクリーニング方法。
- 前記第1のクリーニングガスにおいて、H2ガスとN2ガスの流量比は1:0〜1:3である、請求項1〜7のいずれか一項に記載のクリーニング方法。
Priority Applications (6)
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JP2014036382A JP6284786B2 (ja) | 2014-02-27 | 2014-02-27 | プラズマ処理装置のクリーニング方法 |
KR1020150021628A KR102283188B1 (ko) | 2014-02-27 | 2015-02-12 | 플라즈마 처리 장치의 클리닝 방법 |
US14/623,765 US20150243489A1 (en) | 2014-02-27 | 2015-02-17 | Cleaning method for plasma processing apparatus |
EP15156143.8A EP2913845A1 (en) | 2014-02-27 | 2015-02-23 | Cleaning method for plasma processing apparatus |
TW104105959A TWI685033B (zh) | 2014-02-27 | 2015-02-25 | 電漿處理裝置之清潔方法 |
CN201510089197.5A CN104882360B (zh) | 2014-02-27 | 2015-02-27 | 等离子体处理装置的清洁方法 |
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JP2014036382A JP6284786B2 (ja) | 2014-02-27 | 2014-02-27 | プラズマ処理装置のクリーニング方法 |
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JP2015162544A JP2015162544A (ja) | 2015-09-07 |
JP2015162544A5 JP2015162544A5 (ja) | 2017-03-16 |
JP6284786B2 true JP6284786B2 (ja) | 2018-02-28 |
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US (1) | US20150243489A1 (ja) |
EP (1) | EP2913845A1 (ja) |
JP (1) | JP6284786B2 (ja) |
KR (1) | KR102283188B1 (ja) |
CN (1) | CN104882360B (ja) |
TW (1) | TWI685033B (ja) |
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JP6460947B2 (ja) * | 2015-09-16 | 2019-01-30 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
JP6442622B2 (ja) * | 2015-11-30 | 2018-12-19 | 東京エレクトロン株式会社 | 基板処理装置のチャンバークリーニング方法 |
CN105590849B (zh) * | 2016-02-29 | 2018-08-28 | 上海华力微电子有限公司 | 一种解决hdp psg制程厚度均一性持续跳高的方法 |
KR101792828B1 (ko) | 2016-06-29 | 2017-11-01 | 삼성중공업 주식회사 | 세정장치를 구비한 오염물질 저감장치 및 그의 세정방법 |
JP6635888B2 (ja) * | 2016-07-14 | 2020-01-29 | 東京エレクトロン株式会社 | プラズマ処理システム |
US10546762B2 (en) * | 2016-11-18 | 2020-01-28 | Applied Materials, Inc. | Drying high aspect ratio features |
JP6688763B2 (ja) * | 2017-05-30 | 2020-04-28 | 東京エレクトロン株式会社 | プラズマ処理方法 |
JP6902941B2 (ja) * | 2017-06-29 | 2021-07-14 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
JP7018801B2 (ja) * | 2018-03-29 | 2022-02-14 | 東京エレクトロン株式会社 | プラズマ処理装置、及び被処理体の搬送方法 |
JP2020017676A (ja) * | 2018-07-26 | 2020-01-30 | 株式会社ディスコ | ウェーハの加工方法 |
JP6960390B2 (ja) * | 2018-12-14 | 2021-11-05 | 東京エレクトロン株式会社 | 給電構造及びプラズマ処理装置 |
JP7061140B2 (ja) * | 2019-02-27 | 2022-04-27 | 株式会社日立ハイテク | プラズマ処理方法及びプラズマ処理装置 |
CN111424260B (zh) * | 2020-06-09 | 2020-09-11 | 上海陛通半导体能源科技股份有限公司 | 具有高效清洁能力的化学气相沉积设备及半导体工艺方法 |
CN114798591B (zh) * | 2021-01-27 | 2023-08-18 | 中国科学院微电子研究所 | 基于晶片清理仓的气压调控装置及方法 |
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-
2014
- 2014-02-27 JP JP2014036382A patent/JP6284786B2/ja active Active
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2015
- 2015-02-12 KR KR1020150021628A patent/KR102283188B1/ko active IP Right Grant
- 2015-02-17 US US14/623,765 patent/US20150243489A1/en not_active Abandoned
- 2015-02-23 EP EP15156143.8A patent/EP2913845A1/en not_active Withdrawn
- 2015-02-25 TW TW104105959A patent/TWI685033B/zh active
- 2015-02-27 CN CN201510089197.5A patent/CN104882360B/zh active Active
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EP2913845A1 (en) | 2015-09-02 |
JP2015162544A (ja) | 2015-09-07 |
US20150243489A1 (en) | 2015-08-27 |
CN104882360B (zh) | 2020-11-06 |
TW201546899A (zh) | 2015-12-16 |
KR102283188B1 (ko) | 2021-07-29 |
TWI685033B (zh) | 2020-02-11 |
CN104882360A (zh) | 2015-09-02 |
KR20150101927A (ko) | 2015-09-04 |
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