WO2004082008A8 - Ｃｖｄ装置及びｃｖｄ装置のクリーニング方法 - Google Patents

Ｃｖｄ装置及びｃｖｄ装置のクリーニング方法

Info

Publication number
WO2004082008A8
WO2004082008A8 PCT/JP2004/003258 JP2004003258W WO2004082008A8 WO 2004082008 A8 WO2004082008 A8 WO 2004082008A8 JP 2004003258 W JP2004003258 W JP 2004003258W WO 2004082008 A8 WO2004082008 A8 WO 2004082008A8
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning
frequency
cvd apparatus
upper electrode
electrode
Prior art date
Application number
PCT/JP2004/003258
Other languages
English (en)
French (fr)
Other versions
WO2004082008A1 (ja
Inventor
Etsuo Wani
Katsuo Sakai
Seiji Okura
Masaji Sakamura
Kaoru Abe
Hitoshi Murata
Kenji Kameda
Original Assignee
Res Inst Innovative Tech Earth
Etsuo Wani
Katsuo Sakai
Seiji Okura
Masaji Sakamura
Kaoru Abe
Hitoshi Murata
Kenji Kameda
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Res Inst Innovative Tech Earth, Etsuo Wani, Katsuo Sakai, Seiji Okura, Masaji Sakamura, Kaoru Abe, Hitoshi Murata, Kenji Kameda filed Critical Res Inst Innovative Tech Earth
Priority to US10/548,873 priority Critical patent/US20060201533A1/en
Priority to EP04720167.8A priority patent/EP1612857B1/en
Publication of WO2004082008A1 publication Critical patent/WO2004082008A1/ja
Publication of WO2004082008A8 publication Critical patent/WO2004082008A8/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
PCT/JP2004/003258 2003-03-14 2004-03-12 Ｃｖｄ装置及びｃｖｄ装置のクリーニング方法 WO2004082008A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/548,873 US20060201533A1 (en) 2003-03-14 2004-03-12 Cvd apparatus and method for cleaning cvd apparatus
EP04720167.8A EP1612857B1 (en) 2003-03-14 2004-03-12 Cvd apparatus and method for cleaning cvd apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003070337 2003-03-14
JP2003-070337 2003-03-14
JP2003-187141 2003-06-30
JP2003187141A JP4264479B2 (ja) 2003-03-14 2003-06-30 Ｃｖｄ装置のクリーニング方法

Publications (2)

Publication Number Publication Date
WO2004082008A1 WO2004082008A1 (ja) 2004-09-23
WO2004082008A8 true WO2004082008A8 (ja) 2004-12-29

Family

ID=32992979

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/003258 WO2004082008A1 (ja) 2003-03-14 2004-03-12 Ｃｖｄ装置及びｃｖｄ装置のクリーニング方法

Country Status (4)

Country Link
US (1) US20060201533A1 (ja)
EP (1) EP1612857B1 (ja)
JP (1) JP4264479B2 (ja)
WO (1) WO2004082008A1 (ja)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006066540A (ja) 2004-08-25 2006-03-09 Tokyo Electron Ltd 薄膜形成装置の洗浄方法及び薄膜形成装置
US7494943B2 (en) 2005-10-20 2009-02-24 Tokyo Electron Limited Method for using film formation apparatus
US20080099450A1 (en) * 2006-10-30 2008-05-01 Applied Materials, Inc. Mask etch plasma reactor with backside optical sensors and multiple frequency control of etch distribution
JP2009152539A (ja) * 2007-11-30 2009-07-09 National Institute Of Advanced Industrial & Technology 半導体デバイスの連続製造方法及びチャンバー
JP4531833B2 (ja) 2007-12-05 2010-08-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びクリーニング方法
US8524112B2 (en) * 2007-12-21 2013-09-03 Solvay Fluor Gmbh Process for the production of microelectromechanical systems
EP2130940B1 (en) 2008-05-30 2017-04-05 Applied Materials, Inc. Arrangement and method for removing alkali- or alkaline earth-metals from a vacuum coating chamber
US8083859B2 (en) 2008-05-30 2011-12-27 Applied Materials, Inc. Arrangement and method for removing alkali- or alkaline earth-metals from a vacuum coating chamber
JP2012506620A (ja) * 2008-10-21 2012-03-15 アプライド マテリアルズ インコーポレイテッド チャンバをクリーニングするプラズマ発生源とプロセス
JP2012507834A (ja) * 2008-11-04 2012-03-29 フラウンホーファー−ゲゼルシャフト ツル フェルデルング デル アンゲヴァンテン フォルシュング エー ファウ 平面基板をプラズマ加工する方法および装置
JP2010182937A (ja) * 2009-02-06 2010-08-19 Sharp Corp プラズマクリーニング方法
US20120214312A1 (en) * 2009-10-30 2012-08-23 Solvay Sa Method of plasma etching and plasma chamber cleaning using F2 and COF2
CN102098863B (zh) * 2009-12-14 2013-09-11 北京北方微电子基地设备工艺研究中心有限责任公司 用于等离子体加工设备的电极板和清除工艺沉积物的方法
US20110297088A1 (en) * 2010-06-04 2011-12-08 Texas Instruments Incorporated Thin edge carrier ring
JP2012015411A (ja) * 2010-07-02 2012-01-19 Tokyo Electron Ltd 半導体装置の製造方法及び半導体装置
WO2012027187A1 (en) * 2010-08-25 2012-03-01 Linde Aktiengesellschaft Deposition chamber cleaning using in situ activation of molecular fluorine
US9017486B2 (en) 2010-09-09 2015-04-28 International Business Machines Corporation Deposition chamber cleaning method including stressed cleaning layer
JP5904877B2 (ja) * 2012-05-29 2016-04-20 大陽日酸株式会社 炭化珪素除去方法
JP2013251325A (ja) * 2012-05-30 2013-12-12 Taiyo Nippon Sanso Corp 炭化珪素除去装置及び炭化珪素除去方法
JP5973850B2 (ja) * 2012-09-03 2016-08-23 大陽日酸株式会社 クリーニング終点検知方法
WO2014123028A1 (ja) * 2013-02-05 2014-08-14 株式会社日立国際電気 クリーニング方法
JP5988102B2 (ja) * 2013-03-01 2016-09-07 パナソニックＩｐマネジメント株式会社 プラズマクリーニング方法
US10784091B2 (en) 2017-09-29 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Process and related device for removing by-product on semiconductor processing chamber sidewalls
US10529581B2 (en) * 2017-12-29 2020-01-07 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications
JP7091198B2 (ja) * 2018-09-11 2022-06-27 キオクシア株式会社 プラズマ処理装置および半導体装置の製造方法
CN111370282B (zh) * 2018-12-26 2022-06-24 江苏鲁汶仪器有限公司 一种等离子增强化学气相沉积腔室的清洗方法
CN114649178A (zh) * 2020-12-18 2022-06-21 中微半导体设备(上海)股份有限公司 一种下电极组件及等离子体处理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01113332U (ja) * 1988-01-26 1989-07-31
JPH07288248A (ja) * 1994-04-19 1995-10-31 Toshiba Corp 半導体素子用プラズマ装置
JP3350264B2 (ja) * 1994-12-22 2002-11-25 松下電器産業株式会社 プラズマクリーニング方法
JP3696983B2 (ja) * 1996-06-17 2005-09-21 キヤノン株式会社 プラズマ処理方法およびプラズマ処理装置
JPH1072672A (ja) * 1996-07-09 1998-03-17 Applied Materials Inc 非プラズマ式チャンバクリーニング法
JPH11204436A (ja) * 1998-01-16 1999-07-30 Sharp Corp 電子デバイス製造装置
EP1086353A4 (en) * 1998-06-12 2001-08-22 On Line Techn Inc METHOD AND APPARATUS FOR DETERMINING THE END OF CLEANING OF A TREATMENT CHAMBER OR THE END OF THE ENGRAVING OF A WAFER
JP4112198B2 (ja) * 2000-09-11 2008-07-02 財団法人地球環境産業技術研究機構 クリーニングガス及びエッチングガス、並びにチャンバークリーニング方法及びエッチング方法
JP2002280376A (ja) * 2001-03-22 2002-09-27 Research Institute Of Innovative Technology For The Earth Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置
US6932092B2 (en) * 2002-11-22 2005-08-23 Applied Materials, Inc. Method for cleaning plasma enhanced chemical vapor deposition chamber using very high frequency energy

Also Published As

Publication number Publication date
EP1612857A1 (en) 2006-01-04
JP2004343026A (ja) 2004-12-02
EP1612857A4 (en) 2009-02-25
JP4264479B2 (ja) 2009-05-20
EP1612857B1 (en) 2018-08-01
WO2004082008A1 (ja) 2004-09-23
US20060201533A1 (en) 2006-09-14

Similar Documents

Publication Publication Date Title
WO2004082008A8 (ja) Ｃｖｄ装置及びｃｖｄ装置のクリーニング方法
WO2006071544A3 (en) Methods for silicon electrode assembly etch rate and etch uniformity recovery
EP2479783A3 (en) Plasma processing apparatus and method
WO2004108617A3 (en) Methods of finishing quartz glass surfaces and components made by the methods
SG151287A1 (en) Method for reducing roughness of a thick insulating layer
WO2010047953A3 (en) A remote plasma clean process with cycled high and low pressure clean steps
AU2003253873A1 (en) Apparatus and method for backfilling a semiconductor wafer process chamber
TW200723393A (en) Plasma etching method
TW200701817A (en) Method for producing polymeric capacitive ultrasonic transducer
AU2003279587A8 (en) Apparatus for treating surfaces of a substrate with atmospheric pressure plasma
AU2003223126A1 (en) Apparatus and method for depositing thin film on wafer using remote plasma
TW200721284A (en) Apparatus for the removal of an edge polymer from a substrate and methods therefor
AU2003269499A1 (en) Semiconductor apparatus and fabrication method of the same
TW200739719A (en) Plasma etching method and computer-readable storage medium
WO2006071556A3 (en) Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
WO2008105255A1 (ja) プラズマ処理装置のクリーニング方法、そのクリーニング方法を実行するプラズマ処理装置およびそのクリーニング方法を実行するプログラムを記憶する記憶媒体
WO2006039029A3 (en) A method for forming a thin complete high-permittivity dielectric layer
WO2004109770A3 (en) Through wafer via process and amplifier with through wafer via
TW200723968A (en) Apparatus and methods for using high frequency chokes in a substrate deposition apparatus
AU2003265921A1 (en) Method of forming and/or modifying a dielectric film on a semiconductor surface
AU2001222223A1 (en) Apparatus for manufacturing dlc-film-coated plastic container, method of manufacturing the same, and method for cleaning inner electrode
TW200501204A (en) Quartz component for plasma processing apparatus and restoring method thereof
AU2003232441A1 (en) Method and apparatus for increasing bulk conductivity of a ferroelectric material
WO2004021409A3 (en) A method and system to enhance the removal of high-k-dielectric materials
HUP0302096A2 (hu) Eljárás fafelületek módosítására villamos kisüléssel, légköri nyomáson

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
CFP Corrected version of a pamphlet front page

Free format text: UNDER (57) PUBLISHED ABSTRACT REPLACED BY CORRECT ABSTRACT

WWE Wipo information: entry into national phase

Ref document number: 2004720167

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2004720167

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 10548873

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 10548873

Country of ref document: US