JP7091198B2 - プラズマ処理装置および半導体装置の製造方法 - Google Patents
プラズマ処理装置および半導体装置の製造方法 Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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Description
図1は、実施形態にかかるプラズマ処理装置1の構成の一例を模式的に示す縦断面図である。図2は、実施形態にかかるプラズマ処理装置1のヒータペデスタル13の周囲の構成を模式的に示す横断面図である。プラズマ処理装置1は、例えばPCVD(Plasma Chemical Vapor Deposition)装置として構成されている。
次に、図3~図5を用いて、プラズマ処理装置1における種々の処理の例について説明する。図3は、実施形態にかかるプラズマ処理装置1におけるウェハWのプラズマ処理の様子を示す模式図である。
次に、図6を用いて、プラズマ処理装置1における半導体装置の製造処理としての処理の例について説明する。図6は、実施形態にかかるプラズマ処理装置1での半導体装置の製造処理の手順の一例を示すフロー図である。
比較例のプラズマ処理装置は、例えば、側面電極13s,15s等を有さない。また、比較例のプラズマ処理装置の処理においては、例えば、ヒータペデスタルが常時、プラズマ処理時の温度に保たれる。このため、以下の課題が生じる。
次に、図7を用いて、実施形態の変形例のプラズマ処理装置について説明する。図7は、実施形態の変形例にかかるプラズマ処理装置のヒータペデスタル13xの周囲の構成を模式的に示す横断面図である。変形例のプラズマ処理装置では、側面電極13sa,13sb,13sc,15sa,15sb,15scの形状が上述の実施形態とは異なる。
上述の実施形態または変形例の構成に加え、ドライクリーニング処理の終了後から、シーズニング処理を経て、所定期間のプラズマ処理により強固な堆積膜Dpが堆積されるまで、プラズマ処理装置のアイドリング時にシャワーヘッドから不活性ガスをチャンバ内に供給するようにしてもよい。これにより、万が一、ヒータペデスタルからフッ化物Dcが昇華しても、シャワーヘッドへの付着が抑制される。
Claims (4)
- プラズマ化学気相成長法を用いて基板に成膜を行うプラズマ処理装置であって、
前記基板を収容可能な処理容器と、
前記処理容器の内部に配置される上部電極と、
前記上部電極に対向し、接地がされた下部電極および前記基板を加熱するヒータを有し、前記基板を載置する基板載置台と、
前記基板載置台の側面に前記下部電極とは離間して埋め込まれ、接地がされた第1の側面電極と、
前記基板載置台の外側であって、前記基板載置台と前記処理容器の側壁との間で前記第1の側面電極に対向する第2の側面電極と、
前記上部電極および前記第2の側面電極に電圧を印加する電源と、を備え、
前記上部電極への電圧の印加と、前記第2の側面電極への電圧の印加とは、独立して行うことができる、
プラズマ処理装置。 - プラズマ化学気相成長法を用いて基板に成膜を行うプラズマ処理装置で実施される半導体装置の製造方法であって、
前記プラズマ処理装置は、
前記基板を収容可能な処理容器と、
前記処理容器の内部に配置される上部電極と、
前記上部電極に対向し、接地がされた下部電極および前記基板を加熱するヒータを有し、前記基板を載置する基板載置台と、
前記基板載置台の側面に前記下部電極とは離間して埋め込まれ、接地がされた第1の側面電極と、
前記基板載置台の外側であって、前記基板載置台と前記処理容器の側壁との間で前記第1の側面電極に対向する第2の側面電極と、
前記上部電極および前記第2の側面電極に電圧を印加する電源と、を備え、
前記第2の側面電極に電圧の印加を行って前記基板載置台の側面近傍にシーズニングガスのプラズマを生成し、前記基板載置台の側面にシーズニング膜を形成するシーズニングステップを含む、
半導体装置の製造方法。 - 前記基板載置台をシーズニング処理の温度に降温する降温ステップと、
フッ素系ガスを用いて前記上部電極および前記基板載置台に対してドライクリーニング処理を行うドライクリーニングステップと、
前記基板載置台をプラズマ処理の温度に昇温する昇温ステップと、を含み、
前記シーズニングステップは、
前記ドライクリーニングステップ後であって、前記昇温ステップ前に行われる、
請求項2に記載の半導体装置の製造方法。 - 前記シーズニングステップでは、
前記上部電極に電圧の印加を行って前記基板載置台の上方に前記シーズニングガスのプラズマを生成し、前記基板載置台の上面にシーズニング膜を形成する、
請求項2または請求項3に記載の半導体装置の製造方法。
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JP2018169612A JP7091198B2 (ja) | 2018-09-11 | 2018-09-11 | プラズマ処理装置および半導体装置の製造方法 |
US16/290,792 US20200080201A1 (en) | 2018-09-11 | 2019-03-01 | Plasma treatment device and method for manufacturing semiconductor device |
US17/666,789 US20220162757A1 (en) | 2018-09-11 | 2022-02-08 | Plasma treatment device and method for manufacturing semiconductor device |
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US20210381107A1 (en) * | 2020-06-03 | 2021-12-09 | Micron Technology, Inc. | Material deposition systems, and related methods and microelectronic devices |
JP2023043720A (ja) * | 2021-09-16 | 2023-03-29 | キオクシア株式会社 | 基板処理装置、及び半導体装置の製造方法 |
Citations (5)
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JP2002050618A (ja) | 2000-05-04 | 2002-02-15 | Tokyo Electron Ltd | プラズマを用いて基板を処理するための装置および方法 |
JP2004343026A (ja) | 2003-03-14 | 2004-12-02 | Research Institute Of Innovative Technology For The Earth | Cvd装置およびそれを用いたcvd装置のクリーニング方法 |
JP2005068559A (ja) | 2004-10-15 | 2005-03-17 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
WO2008047838A1 (fr) | 2006-10-19 | 2008-04-24 | Tokyo Electron Limited | Procédé de formation de film en Ti et milieu de stockage |
JP2012216696A (ja) | 2011-04-01 | 2012-11-08 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
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JPH0653176A (ja) * | 1992-07-30 | 1994-02-25 | Matsushita Electron Corp | ドライエッチング装置 |
US5824375A (en) * | 1996-10-24 | 1998-10-20 | Applied Materials, Inc. | Decontamination of a plasma reactor using a plasma after a chamber clean |
JP3116904B2 (ja) * | 1997-10-08 | 2000-12-11 | 日本電気株式会社 | 半導体装置の成膜処理装置、半導体装置の製造方法及び半導体の薄膜形成方法 |
WO2003005406A1 (en) * | 2001-07-03 | 2003-01-16 | Tokyo Electron Limited | Plasma pump with inter-stage plasma source |
WO2016195983A1 (en) * | 2015-06-05 | 2016-12-08 | Applied Materials, Inc. | Graded in-situ charge trapping layers to enable electrostatic chucking and excellent particle performance for boron-doped carbon films |
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- 2018-09-11 JP JP2018169612A patent/JP7091198B2/ja active Active
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- 2019-03-01 US US16/290,792 patent/US20200080201A1/en not_active Abandoned
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002050618A (ja) | 2000-05-04 | 2002-02-15 | Tokyo Electron Ltd | プラズマを用いて基板を処理するための装置および方法 |
JP2004343026A (ja) | 2003-03-14 | 2004-12-02 | Research Institute Of Innovative Technology For The Earth | Cvd装置およびそれを用いたcvd装置のクリーニング方法 |
JP2005068559A (ja) | 2004-10-15 | 2005-03-17 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
WO2008047838A1 (fr) | 2006-10-19 | 2008-04-24 | Tokyo Electron Limited | Procédé de formation de film en Ti et milieu de stockage |
JP2012216696A (ja) | 2011-04-01 | 2012-11-08 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
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