WO2008105255A1 - プラズマ処理装置のクリーニング方法、そのクリーニング方法を実行するプラズマ処理装置およびそのクリーニング方法を実行するプログラムを記憶する記憶媒体 - Google Patents

プラズマ処理装置のクリーニング方法、そのクリーニング方法を実行するプラズマ処理装置およびそのクリーニング方法を実行するプログラムを記憶する記憶媒体 Download PDF

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Publication number
WO2008105255A1
WO2008105255A1 PCT/JP2008/052650 JP2008052650W WO2008105255A1 WO 2008105255 A1 WO2008105255 A1 WO 2008105255A1 JP 2008052650 W JP2008052650 W JP 2008052650W WO 2008105255 A1 WO2008105255 A1 WO 2008105255A1
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WO
WIPO (PCT)
Prior art keywords
plasma
cleaning
treating apparatus
vessel
cleaning method
Prior art date
Application number
PCT/JP2008/052650
Other languages
English (en)
French (fr)
Inventor
Noriaki Fukiage
Shinji Komoto
Hiroyuki Takaba
Kiyotaka Ishibashi
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to CN2008800062091A priority Critical patent/CN101622692B/zh
Priority to KR1020097016989A priority patent/KR101153330B1/ko
Priority to US12/528,734 priority patent/US8419859B2/en
Publication of WO2008105255A1 publication Critical patent/WO2008105255A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Abstract

　真空引き可能になされた処理容器３２内にて被処理体Ｗに対してプラズマを用いてプラズマ処理を施すようにしたプラズマ処理装置のクリーニング方法において、処理容器内にクリーニングガスを供給しつつプラズマを発生させて処理容器内を第１の圧力に維持してクリーニングを行う第１のクリーニング工程と、処理容器内にクリーニングガスを供給しつつプラズマを発生させて処理容器内を第１の圧力よりも高い第２の圧力に維持してクリーニングを行う第２のクリーニング工程とを有する。これにより、処理容器の内壁面や処理容器内の部材に損傷を与えることなく、クリーニングを効率的に、且つ迅速に行う。
PCT/JP2008/052650 2007-02-27 2008-02-18 プラズマ処理装置のクリーニング方法、そのクリーニング方法を実行するプラズマ処理装置およびそのクリーニング方法を実行するプログラムを記憶する記憶媒体 WO2008105255A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800062091A CN101622692B (zh) 2007-02-27 2008-02-18 等离子体处理装置的清洗方法、执行该清洗方法的等离子体处理装置
KR1020097016989A KR101153330B1 (ko) 2007-02-27 2008-02-18 플라즈마 처리 장치의 클리닝 방법, 그 클리닝 방법을 실행하는 플라즈마 처리 장치 및 그 클리닝 방법을 실행하는 프로그램을 기억하는 기억 매체
US12/528,734 US8419859B2 (en) 2007-02-27 2008-02-18 Method of cleaning plasma-treating apparatus, plasma-treating apparatus where the cleaning method is practiced, and memory medium memorizing program executing the cleaning method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-048124 2007-02-27
JP2007048124A JP4905179B2 (ja) 2007-02-27 2007-02-27 プラズマ処理装置及びそのクリーニング方法

Publications (1)

Publication Number Publication Date
WO2008105255A1 true WO2008105255A1 (ja) 2008-09-04

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PCT/JP2008/052650 WO2008105255A1 (ja) 2007-02-27 2008-02-18 プラズマ処理装置のクリーニング方法、そのクリーニング方法を実行するプラズマ処理装置およびそのクリーニング方法を実行するプログラムを記憶する記憶媒体

Country Status (6)

Country Link
US (1) US8419859B2 (ja)
JP (1) JP4905179B2 (ja)
KR (1) KR101153330B1 (ja)
CN (1) CN101622692B (ja)
TW (1) TWI411015B (ja)
WO (1) WO2008105255A1 (ja)

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JP5442403B2 (ja) * 2009-11-18 2014-03-12 東京エレクトロン株式会社 基板処理装置及びそのクリーニング方法並びにプログラムを記録した記録媒体
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
CN102623298B (zh) * 2011-01-30 2014-09-24 中芯国际集成电路制造(上海)有限公司 反应腔室的清洗方法
JP5819448B2 (ja) * 2014-01-06 2015-11-24 東京エレクトロン株式会社 プラズマ処理装置、異常判定方法及びマイクロ波発生器
JP6139603B2 (ja) * 2015-06-30 2017-05-31 シスメックス株式会社 塗抹標本作製装置、血液検体処理システム、および、塗抹標本作製装置における血液処理部の洗浄方法
CN108080356B (zh) * 2016-11-22 2022-05-06 东莞新科技术研究开发有限公司 空气主轴的抛光处理方法
JP6956660B2 (ja) * 2018-03-19 2021-11-02 東京エレクトロン株式会社 クリーニング方法及び成膜装置
CN110323115B (zh) * 2018-03-30 2021-10-22 长鑫存储技术有限公司 半导体生产设备自清洗方法及栅极字线结构制备方法
JP7023188B2 (ja) 2018-06-11 2022-02-21 東京エレクトロン株式会社 クリーニング方法
JP6852040B2 (ja) * 2018-11-16 2021-03-31 大陽日酸株式会社 半導体製造装置部品の洗浄装置、半導体製造装置部品の洗浄方法、及び半導体製造装置部品の洗浄システム
US11004710B2 (en) * 2019-06-04 2021-05-11 Applied Materials, Inc. Wafer placement error detection based on measuring a current through an electrostatic chuck and solution for intervention
JP2021034515A (ja) * 2019-08-22 2021-03-01 東京エレクトロン株式会社 クリーニング方法及びマイクロ波プラズマ処理装置
KR102336559B1 (ko) * 2019-11-26 2021-12-08 세메스 주식회사 부품 표면 처리 방법 및 부품 처리 장치
WO2021230109A1 (ja) * 2020-05-12 2021-11-18 株式会社クリエイティブコーティングス Ａｌｄ方法及びａｌｄ装置
JP2022151131A (ja) 2021-03-26 2022-10-07 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理装置

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Also Published As

Publication number Publication date
JP2008211099A (ja) 2008-09-11
CN101622692A (zh) 2010-01-06
CN101622692B (zh) 2011-04-13
KR20090110854A (ko) 2009-10-22
US8419859B2 (en) 2013-04-16
KR101153330B1 (ko) 2012-06-05
TWI411015B (zh) 2013-10-01
JP4905179B2 (ja) 2012-03-28
TW200901288A (en) 2009-01-01
US20100175713A1 (en) 2010-07-15

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