TW201216414A - Methods for in-situ passivation of silicon-on-insulator wafers - Google Patents

Methods for in-situ passivation of silicon-on-insulator wafers Download PDF

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Publication number
TW201216414A
TW201216414A TW100123193A TW100123193A TW201216414A TW 201216414 A TW201216414 A TW 201216414A TW 100123193 A TW100123193 A TW 100123193A TW 100123193 A TW100123193 A TW 100123193A TW 201216414 A TW201216414 A TW 201216414A
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TW
Taiwan
Prior art keywords
wafer
chamber
insulating layer
split surface
split
Prior art date
Application number
TW100123193A
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English (en)
Chinese (zh)
Inventor
Michael J Ries
Dale A Wittle
Anca Stefanescu
Andrew M Jones
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Memc Electronic Materials
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Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Publication of TW201216414A publication Critical patent/TW201216414A/zh

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    • H10P90/1916—
    • H10P95/11—
    • H10W10/181—

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  • Element Separation (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
TW100123193A 2010-06-30 2011-06-30 Methods for in-situ passivation of silicon-on-insulator wafers TW201216414A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35999810P 2010-06-30 2010-06-30

Publications (1)

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TW201216414A true TW201216414A (en) 2012-04-16

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TW100123193A TW201216414A (en) 2010-06-30 2011-06-30 Methods for in-situ passivation of silicon-on-insulator wafers

Country Status (8)

Country Link
US (1) US8859393B2 (enExample)
EP (1) EP2589075A2 (enExample)
JP (1) JP5989642B2 (enExample)
KR (3) KR20190087668A (enExample)
CN (1) CN102959697A (enExample)
SG (1) SG186853A1 (enExample)
TW (1) TW201216414A (enExample)
WO (1) WO2012001659A2 (enExample)

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CN102427097B (zh) * 2011-11-23 2014-05-07 中国科学院物理研究所 一种硅的氧化钝化方法及钝化装置
US8747598B2 (en) 2012-04-25 2014-06-10 Gtat Corporation Method of forming a permanently supported lamina
WO2015112308A1 (en) 2014-01-23 2015-07-30 Sunedison Semiconductor Limited High resistivity soi wafers and a method of manufacturing thereof
US9853133B2 (en) * 2014-09-04 2017-12-26 Sunedison Semiconductor Limited (Uen201334164H) Method of manufacturing high resistivity silicon-on-insulator substrate
US9899499B2 (en) 2014-09-04 2018-02-20 Sunedison Semiconductor Limited (Uen201334164H) High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
US10483152B2 (en) 2014-11-18 2019-11-19 Globalwafers Co., Ltd. High resistivity semiconductor-on-insulator wafer and a method of manufacturing
WO2016081313A1 (en) 2014-11-18 2016-05-26 Sunedison Semiconductor Limited A method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers
US10224233B2 (en) 2014-11-18 2019-03-05 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He-N2 co-implantation
WO2016140850A1 (en) 2015-03-03 2016-09-09 Sunedison Semiconductor Limited Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress
US9881832B2 (en) 2015-03-17 2018-01-30 Sunedison Semiconductor Limited (Uen201334164H) Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof
US10290533B2 (en) 2015-03-17 2019-05-14 Globalwafers Co., Ltd. Thermally stable charge trapping layer for use in manufacture of semiconductor-on-insulator structures
CN107873106B (zh) 2015-06-01 2022-03-18 环球晶圆股份有限公司 制造绝缘体上硅锗的方法
CN107667416B (zh) 2015-06-01 2021-08-31 环球晶圆股份有限公司 制造绝缘体上半导体的方法
WO2017087393A1 (en) 2015-11-20 2017-05-26 Sunedison Semiconductor Limited Manufacturing method of smoothing a semiconductor surface
WO2017142704A1 (en) 2016-02-19 2017-08-24 Sunedison Semiconductor Limited High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed on a substrate with a rough surface
US9831115B2 (en) 2016-02-19 2017-11-28 Sunedison Semiconductor Limited (Uen201334164H) Process flow for manufacturing semiconductor on insulator structures in parallel
WO2017142849A1 (en) 2016-02-19 2017-08-24 Sunedison Semiconductor Limited Semiconductor on insulator structure comprising a buried high resistivity layer
US11114332B2 (en) 2016-03-07 2021-09-07 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
WO2017155804A1 (en) 2016-03-07 2017-09-14 Sunedison Semiconductor Limited Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment
EP3427293B1 (en) 2016-03-07 2021-05-05 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof
US10573550B2 (en) 2016-03-07 2020-02-25 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof
EP3469120B1 (en) 2016-06-08 2022-02-02 GlobalWafers Co., Ltd. High resistivity single crystal silicon ingot and wafer having improved mechanical strength
US10269617B2 (en) 2016-06-22 2019-04-23 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising an isolation region
SG11201903090SA (en) 2016-10-26 2019-05-30 Globalwafers Co Ltd High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency
EP4009361B1 (en) 2016-12-05 2025-02-19 GlobalWafers Co., Ltd. High resistivity silicon-on-insulator structure
US10453703B2 (en) 2016-12-28 2019-10-22 Sunedison Semiconductor Limited (Uen201334164H) Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield
FR3061988B1 (fr) * 2017-01-13 2019-11-01 Soitec Procede de lissage de surface d'un substrat semiconducteur sur isolant
SG11201913769RA (en) 2017-07-14 2020-01-30 Sunedison Semiconductor Ltd Method of manufacture of a semiconductor on insulator structure
US10916416B2 (en) 2017-11-14 2021-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with modified surface and fabrication method thereof
WO2019209492A1 (en) 2018-04-27 2019-10-31 Globalwafers Co., Ltd. Light assisted platelet formation facilitating layer transfer from a semiconductor donor substrate
EP4210092A1 (en) 2018-06-08 2023-07-12 GlobalWafers Co., Ltd. Method for transfer of a thin layer of silicon
US11296277B2 (en) 2018-10-16 2022-04-05 Samsung Electronics Co., Ltd. Variable resistance memory device having an anti-oxidation layer and a method of manufacturing the same

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Also Published As

Publication number Publication date
US20120003814A1 (en) 2012-01-05
US8859393B2 (en) 2014-10-14
JP2013534731A (ja) 2013-09-05
WO2012001659A2 (en) 2012-01-05
KR20190087668A (ko) 2019-07-24
WO2012001659A3 (en) 2012-03-01
EP2589075A2 (en) 2013-05-08
JP5989642B2 (ja) 2016-09-07
SG186853A1 (en) 2013-02-28
CN102959697A (zh) 2013-03-06
KR20130129897A (ko) 2013-11-29
KR102083688B1 (ko) 2020-03-02
KR20180037326A (ko) 2018-04-11

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