CN102959697A - 绝缘体上硅晶片的原位钝化方法 - Google Patents

绝缘体上硅晶片的原位钝化方法 Download PDF

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Publication number
CN102959697A
CN102959697A CN2011800328260A CN201180032826A CN102959697A CN 102959697 A CN102959697 A CN 102959697A CN 2011800328260 A CN2011800328260 A CN 2011800328260A CN 201180032826 A CN201180032826 A CN 201180032826A CN 102959697 A CN102959697 A CN 102959697A
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CN
China
Prior art keywords
wafer
chamber
splitting
silicon
splitting surface
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Pending
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CN2011800328260A
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English (en)
Chinese (zh)
Inventor
M·J·里斯
D·A·怀特勒
A·斯坦法内斯库
A·M·琼斯
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SunEdison Inc
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SunEdison Inc
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Publication of CN102959697A publication Critical patent/CN102959697A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
CN2011800328260A 2010-06-30 2011-06-30 绝缘体上硅晶片的原位钝化方法 Pending CN102959697A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35999810P 2010-06-30 2010-06-30
US61/359,998 2010-06-30
PCT/IB2011/052903 WO2012001659A2 (en) 2010-06-30 2011-06-30 Methods for in-situ passivation of silicon-on-insulator wafers

Publications (1)

Publication Number Publication Date
CN102959697A true CN102959697A (zh) 2013-03-06

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CN2011800328260A Pending CN102959697A (zh) 2010-06-30 2011-06-30 绝缘体上硅晶片的原位钝化方法

Country Status (8)

Country Link
US (1) US8859393B2 (enExample)
EP (1) EP2589075A2 (enExample)
JP (1) JP5989642B2 (enExample)
KR (3) KR20190087668A (enExample)
CN (1) CN102959697A (enExample)
SG (1) SG186853A1 (enExample)
TW (1) TW201216414A (enExample)
WO (1) WO2012001659A2 (enExample)

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CN102427097A (zh) * 2011-11-23 2012-04-25 中国科学院物理研究所 一种硅的氧化钝化方法及钝化装置

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WO2015112308A1 (en) 2014-01-23 2015-07-30 Sunedison Semiconductor Limited High resistivity soi wafers and a method of manufacturing thereof
US9899499B2 (en) 2014-09-04 2018-02-20 Sunedison Semiconductor Limited (Uen201334164H) High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
US9853133B2 (en) * 2014-09-04 2017-12-26 Sunedison Semiconductor Limited (Uen201334164H) Method of manufacturing high resistivity silicon-on-insulator substrate
US10224233B2 (en) 2014-11-18 2019-03-05 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He-N2 co-implantation
US10381260B2 (en) 2014-11-18 2019-08-13 GlobalWafers Co., Inc. Method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers
EP3221885B1 (en) 2014-11-18 2019-10-23 GlobalWafers Co., Ltd. High resistivity semiconductor-on-insulator wafer and a method of manufacturing
JP6517360B2 (ja) 2015-03-03 2019-05-22 サンエディソン・セミコンダクター・リミテッドＳｕｎＥｄｉｓｏｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｌｉｍｉｔｅｄ 膜応力を制御可能なシリコン基板の上に電荷トラップ用多結晶シリコン膜を成長させる方法
US9881832B2 (en) 2015-03-17 2018-01-30 Sunedison Semiconductor Limited (Uen201334164H) Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof
JP6637515B2 (ja) 2015-03-17 2020-01-29 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． 半導体オン・インシュレータ構造の製造において使用するための熱的に安定した電荷トラップ層
CN114496732B (zh) 2015-06-01 2023-03-03 环球晶圆股份有限公司 制造绝缘体上硅锗的方法
WO2016196060A1 (en) 2015-06-01 2016-12-08 Sunedison Semiconductor Limited A method of manufacturing semiconductor-on-insulator
EP3378094B1 (en) 2015-11-20 2021-09-15 Globalwafers Co., Ltd. Manufacturing method of smoothing a semiconductor surface
US9831115B2 (en) 2016-02-19 2017-11-28 Sunedison Semiconductor Limited (Uen201334164H) Process flow for manufacturing semiconductor on insulator structures in parallel
US10622247B2 (en) 2016-02-19 2020-04-14 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a buried high resistivity layer
WO2017142704A1 (en) 2016-02-19 2017-08-24 Sunedison Semiconductor Limited High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed on a substrate with a rough surface
EP3758050A1 (en) 2016-03-07 2020-12-30 GlobalWafers Co., Ltd. Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof
WO2017155804A1 (en) 2016-03-07 2017-09-14 Sunedison Semiconductor Limited Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment
US10573550B2 (en) 2016-03-07 2020-02-25 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof
WO2017155808A1 (en) 2016-03-07 2017-09-14 Sunedison Semiconductor Limited Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
EP3995608A1 (en) 2016-06-08 2022-05-11 GlobalWafers Co., Ltd. High resistivity single crystal silicon ingot and wafer having improved mechanical strength
US10269617B2 (en) 2016-06-22 2019-04-23 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising an isolation region
JP6831911B2 (ja) 2016-10-26 2021-02-17 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板
JP6801105B2 (ja) 2016-12-05 2020-12-16 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． 高抵抗シリコンオンインシュレータ構造及びその製造方法
EP3562978B1 (en) 2016-12-28 2021-03-10 Sunedison Semiconductor Limited Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield
FR3061988B1 (fr) * 2017-01-13 2019-11-01 Soitec Procede de lissage de surface d'un substrat semiconducteur sur isolant
JP7034186B2 (ja) 2017-07-14 2022-03-11 サンエディソン・セミコンダクター・リミテッド 絶縁体上半導体構造の製造方法
US10916416B2 (en) * 2017-11-14 2021-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with modified surface and fabrication method thereof
JP7160943B2 (ja) 2018-04-27 2022-10-25 グローバルウェーハズ カンパニー リミテッド 半導体ドナー基板からの層移転を容易にする光アシスト板状体形成
CN112262467B (zh) 2018-06-08 2024-08-09 环球晶圆股份有限公司 将硅薄层移转的方法
US11296277B2 (en) 2018-10-16 2022-04-05 Samsung Electronics Co., Ltd. Variable resistance memory device having an anti-oxidation layer and a method of manufacturing the same

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EP0272140A2 (en) * 1986-12-19 1988-06-22 Applied Materials, Inc. TEOS based plasma enhanced chemical vapor deposition process for deposition of silicon dioxide films.
US5330935A (en) * 1990-10-24 1994-07-19 International Business Machines Corporation Low temperature plasma oxidation process
CN1104264A (zh) * 1994-09-02 1995-06-28 复旦大学 热壁密装低温低压淀积二氧化硅薄膜技术
US5880029A (en) * 1996-12-27 1999-03-09 Motorola, Inc. Method of passivating semiconductor devices and the passivated devices
US5972802A (en) * 1997-10-07 1999-10-26 Seh America, Inc. Prevention of edge stain in silicon wafers by ozone dipping
US20020175143A1 (en) * 2001-05-22 2002-11-28 Seh America, Inc. Processes for polishing wafers
CN1574233A (zh) * 2003-05-29 2005-02-02 日东电工株式会社 晶片背表面处理方法以及切割片粘附装置
CN1705768A (zh) * 2002-10-17 2005-12-07 应用材料有限公司 沉积氧化膜的装置和方法
US20070184631A1 (en) * 2005-11-24 2007-08-09 Sumco Corporation Method of manufacturing bonded wafer
US20100130021A1 (en) * 2008-11-26 2010-05-27 Memc Electronic Materials, Inc. Method for processing a silicon-on-insulator structure
CN101728312A (zh) * 2008-10-22 2010-06-09 株式会社半导体能源研究所 Soi衬底及其制造方法

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JP4379943B2 (ja) 1999-04-07 2009-12-09 株式会社デンソー 半導体基板の製造方法および半導体基板製造装置
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GB1444589A (en) * 1972-08-17 1976-08-04 Purification Sciences Inc Corona generation apparatus
EP0272140A2 (en) * 1986-12-19 1988-06-22 Applied Materials, Inc. TEOS based plasma enhanced chemical vapor deposition process for deposition of silicon dioxide films.
US5330935A (en) * 1990-10-24 1994-07-19 International Business Machines Corporation Low temperature plasma oxidation process
CN1104264A (zh) * 1994-09-02 1995-06-28 复旦大学 热壁密装低温低压淀积二氧化硅薄膜技术
US5880029A (en) * 1996-12-27 1999-03-09 Motorola, Inc. Method of passivating semiconductor devices and the passivated devices
US5972802A (en) * 1997-10-07 1999-10-26 Seh America, Inc. Prevention of edge stain in silicon wafers by ozone dipping
US20020175143A1 (en) * 2001-05-22 2002-11-28 Seh America, Inc. Processes for polishing wafers
CN1705768A (zh) * 2002-10-17 2005-12-07 应用材料有限公司 沉积氧化膜的装置和方法
CN1574233A (zh) * 2003-05-29 2005-02-02 日东电工株式会社 晶片背表面处理方法以及切割片粘附装置
US20070184631A1 (en) * 2005-11-24 2007-08-09 Sumco Corporation Method of manufacturing bonded wafer
CN101728312A (zh) * 2008-10-22 2010-06-09 株式会社半导体能源研究所 Soi衬底及其制造方法
US20100130021A1 (en) * 2008-11-26 2010-05-27 Memc Electronic Materials, Inc. Method for processing a silicon-on-insulator structure

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102427097A (zh) * 2011-11-23 2012-04-25 中国科学院物理研究所 一种硅的氧化钝化方法及钝化装置

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US20120003814A1 (en) 2012-01-05
KR20190087668A (ko) 2019-07-24
WO2012001659A2 (en) 2012-01-05
KR102083688B1 (ko) 2020-03-02
KR20130129897A (ko) 2013-11-29
EP2589075A2 (en) 2013-05-08
SG186853A1 (en) 2013-02-28
JP5989642B2 (ja) 2016-09-07
KR20180037326A (ko) 2018-04-11
WO2012001659A3 (en) 2012-03-01
JP2013534731A (ja) 2013-09-05
TW201216414A (en) 2012-04-16
US8859393B2 (en) 2014-10-14

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Application publication date: 20130306