JP2013531860A5 - - Google Patents

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Publication number
JP2013531860A5
JP2013531860A5 JP2013513500A JP2013513500A JP2013531860A5 JP 2013531860 A5 JP2013531860 A5 JP 2013531860A5 JP 2013513500 A JP2013513500 A JP 2013513500A JP 2013513500 A JP2013513500 A JP 2013513500A JP 2013531860 A5 JP2013531860 A5 JP 2013531860A5
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JP
Japan
Prior art keywords
input
output node
bit line
semiconductor memory
memory device
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Pending
Application number
JP2013513500A
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English (en)
Japanese (ja)
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JP2013531860A (ja
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Publication date
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Priority claimed from PCT/CA2011/000242 external-priority patent/WO2011153608A1/en
Publication of JP2013531860A publication Critical patent/JP2013531860A/ja
Publication of JP2013531860A5 publication Critical patent/JP2013531860A5/ja
Pending legal-status Critical Current

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JP2013513500A 2010-06-10 2011-03-04 センス増幅器およびビット線分離を備える半導体メモリデバイス Pending JP2013531860A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35343710P 2010-06-10 2010-06-10
US61/353,437 2010-06-10
PCT/CA2011/000242 WO2011153608A1 (en) 2010-06-10 2011-03-04 Semiconductor memory device with sense amplifier and bitline isolation

Publications (2)

Publication Number Publication Date
JP2013531860A JP2013531860A (ja) 2013-08-08
JP2013531860A5 true JP2013531860A5 (enExample) 2014-02-13

Family

ID=45096139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013513500A Pending JP2013531860A (ja) 2010-06-10 2011-03-04 センス増幅器およびビット線分離を備える半導体メモリデバイス

Country Status (5)

Country Link
US (2) US8462573B2 (enExample)
JP (1) JP2013531860A (enExample)
KR (1) KR20130132377A (enExample)
TW (1) TW201201206A (enExample)
WO (1) WO2011153608A1 (enExample)

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US9047980B2 (en) 2012-08-01 2015-06-02 International Business Machines Corporation Sense amplifier for static random access memory with a pair of complementary data lines isolated from a corresponding pair of complementary bit lines
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US9286969B2 (en) 2014-06-27 2016-03-15 Globalfoundries Inc. Low power sense amplifier for static random access memory
KR102292233B1 (ko) 2015-02-13 2021-08-24 삼성전자주식회사 메모리 장치, 이를 포함하는 메모리 모듈, 및 메모리 시스템
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KR102515457B1 (ko) * 2016-03-02 2023-03-30 에스케이하이닉스 주식회사 센스앰프 및 이를 이용하는 메모리 장치
US10083731B2 (en) * 2016-03-11 2018-09-25 Micron Technology, Inc Memory cell sensing with storage component isolation
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CN109979502B (zh) * 2017-12-27 2021-03-16 华邦电子股份有限公司 动态随机存取存储器
CN109166598B (zh) * 2018-08-17 2024-02-06 长鑫存储技术有限公司 灵敏放大器电路、存储器及信号放大方法
WO2020112884A1 (en) 2018-11-30 2020-06-04 Rambus Inc. Dram device with multiple voltage domains
US10818341B1 (en) 2019-06-07 2020-10-27 Nanya Technology Corporation Sub-word line driver circuit with variable-thickness gate dielectric layer, semiconductor memory device having the same and method of forming the same
KR102773416B1 (ko) 2019-07-05 2025-02-28 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 데이터 라이트 방법
US11348635B2 (en) * 2020-03-30 2022-05-31 Micron Technology, Inc. Memory cell biasing techniques during a read operation
US11929112B2 (en) 2020-07-27 2024-03-12 Anhui University Sense amplifier, memory, and method for controlling sense amplifier
CN111863049B (zh) * 2020-07-27 2022-11-01 安徽大学 灵敏放大器、存储器和灵敏放大器的控制方法
US11410720B2 (en) * 2020-10-01 2022-08-09 Samsung Electronics Co., Ltd. Bitline precharge system for a semiconductor memory device

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