JP2013531860A - センス増幅器およびビット線分離を備える半導体メモリデバイス - Google Patents

センス増幅器およびビット線分離を備える半導体メモリデバイス Download PDF

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Publication number
JP2013531860A
JP2013531860A JP2013513500A JP2013513500A JP2013531860A JP 2013531860 A JP2013531860 A JP 2013531860A JP 2013513500 A JP2013513500 A JP 2013513500A JP 2013513500 A JP2013513500 A JP 2013513500A JP 2013531860 A JP2013531860 A JP 2013531860A
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Japan
Prior art keywords
input
output node
bit line
transistor
semiconductor memory
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Pending
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JP2013513500A
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Japanese (ja)
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JP2013531860A5 (enExample
Inventor
ビョン ジン チョイ
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Mosaid Technologies Inc
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Conversant Intellectual Property Management Inc
Mosaid Technologies Inc
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Publication of JP2013531860A publication Critical patent/JP2013531860A/ja
Publication of JP2013531860A5 publication Critical patent/JP2013531860A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/005—Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4065—Low level details of refresh operations

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2013513500A 2010-06-10 2011-03-04 センス増幅器およびビット線分離を備える半導体メモリデバイス Pending JP2013531860A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35343710P 2010-06-10 2010-06-10
US61/353,437 2010-06-10
PCT/CA2011/000242 WO2011153608A1 (en) 2010-06-10 2011-03-04 Semiconductor memory device with sense amplifier and bitline isolation

Publications (2)

Publication Number Publication Date
JP2013531860A true JP2013531860A (ja) 2013-08-08
JP2013531860A5 JP2013531860A5 (enExample) 2014-02-13

Family

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Family Applications (1)

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JP2013513500A Pending JP2013531860A (ja) 2010-06-10 2011-03-04 センス増幅器およびビット線分離を備える半導体メモリデバイス

Country Status (5)

Country Link
US (2) US8462573B2 (enExample)
JP (1) JP2013531860A (enExample)
KR (1) KR20130132377A (enExample)
TW (1) TW201201206A (enExample)
WO (1) WO2011153608A1 (enExample)

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JP2013109816A (ja) * 2011-11-21 2013-06-06 Sk Hynix Inc 半導体メモリ装置
JPWO2019003045A1 (ja) * 2017-06-27 2020-06-11 株式会社半導体エネルギー研究所 記憶装置

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JP2013531860A (ja) * 2010-06-10 2013-08-08 モサイド・テクノロジーズ・インコーポレーテッド センス増幅器およびビット線分離を備える半導体メモリデバイス
US9330735B2 (en) 2011-07-27 2016-05-03 Rambus Inc. Memory with deferred fractional row activation
WO2013049920A1 (en) 2011-10-04 2013-04-11 Mosaid Technologies Incorporated Reduced noise dram sensing
US9047980B2 (en) 2012-08-01 2015-06-02 International Business Machines Corporation Sense amplifier for static random access memory with a pair of complementary data lines isolated from a corresponding pair of complementary bit lines
KR20150073487A (ko) * 2013-12-23 2015-07-01 에스케이하이닉스 주식회사 반도체 메모리 장치
US9286969B2 (en) 2014-06-27 2016-03-15 Globalfoundries Inc. Low power sense amplifier for static random access memory
KR102292233B1 (ko) 2015-02-13 2021-08-24 삼성전자주식회사 메모리 장치, 이를 포함하는 메모리 모듈, 및 메모리 시스템
KR20170013488A (ko) * 2015-07-27 2017-02-07 에스케이하이닉스 주식회사 반도체장치 및 반도체시스템
KR102515457B1 (ko) * 2016-03-02 2023-03-30 에스케이하이닉스 주식회사 센스앰프 및 이를 이용하는 메모리 장치
US10083731B2 (en) * 2016-03-11 2018-09-25 Micron Technology, Inc Memory cell sensing with storage component isolation
WO2019073333A1 (ja) 2017-10-13 2019-04-18 株式会社半導体エネルギー研究所 記憶装置、電子部品、及び電子機器
CN109979502B (zh) * 2017-12-27 2021-03-16 华邦电子股份有限公司 动态随机存取存储器
CN109166598B (zh) * 2018-08-17 2024-02-06 长鑫存储技术有限公司 灵敏放大器电路、存储器及信号放大方法
WO2020112884A1 (en) 2018-11-30 2020-06-04 Rambus Inc. Dram device with multiple voltage domains
US10818341B1 (en) 2019-06-07 2020-10-27 Nanya Technology Corporation Sub-word line driver circuit with variable-thickness gate dielectric layer, semiconductor memory device having the same and method of forming the same
KR102773416B1 (ko) 2019-07-05 2025-02-28 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 데이터 라이트 방법
US11348635B2 (en) * 2020-03-30 2022-05-31 Micron Technology, Inc. Memory cell biasing techniques during a read operation
US11929112B2 (en) 2020-07-27 2024-03-12 Anhui University Sense amplifier, memory, and method for controlling sense amplifier
CN111863049B (zh) * 2020-07-27 2022-11-01 安徽大学 灵敏放大器、存储器和灵敏放大器的控制方法
US11410720B2 (en) * 2020-10-01 2022-08-09 Samsung Electronics Co., Ltd. Bitline precharge system for a semiconductor memory device

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JPH0430388A (ja) * 1990-05-25 1992-02-03 Oki Electric Ind Co Ltd 半導体記憶回路
JPH0541085A (ja) * 1991-08-06 1993-02-19 Nec Corp センスアンプ回路
JP2002025268A (ja) * 2000-07-13 2002-01-25 Seiko Epson Corp 半導体装置
JP2002025269A (ja) * 2000-07-13 2002-01-25 Seiko Epson Corp 半導体装置
JP2002208276A (ja) * 2001-01-12 2002-07-26 Sony Corp メモリ装置

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US5148399A (en) 1988-06-28 1992-09-15 Oki Electric Industry Co., Ltd. Sense amplifier circuitry selectively separable from bit lines for dynamic random access memory
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JPH0430388A (ja) * 1990-05-25 1992-02-03 Oki Electric Ind Co Ltd 半導体記憶回路
JPH0541085A (ja) * 1991-08-06 1993-02-19 Nec Corp センスアンプ回路
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013109816A (ja) * 2011-11-21 2013-06-06 Sk Hynix Inc 半導体メモリ装置
JPWO2019003045A1 (ja) * 2017-06-27 2020-06-11 株式会社半導体エネルギー研究所 記憶装置
JP7080231B2 (ja) 2017-06-27 2022-06-03 株式会社半導体エネルギー研究所 半導体装置
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Also Published As

Publication number Publication date
US20130265839A1 (en) 2013-10-10
US8462573B2 (en) 2013-06-11
TW201201206A (en) 2012-01-01
KR20130132377A (ko) 2013-12-04
WO2011153608A1 (en) 2011-12-15
US20110305098A1 (en) 2011-12-15
US8780664B2 (en) 2014-07-15

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