JP2012160249A5 - - Google Patents

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Publication number
JP2012160249A5
JP2012160249A5 JP2011272993A JP2011272993A JP2012160249A5 JP 2012160249 A5 JP2012160249 A5 JP 2012160249A5 JP 2011272993 A JP2011272993 A JP 2011272993A JP 2011272993 A JP2011272993 A JP 2011272993A JP 2012160249 A5 JP2012160249 A5 JP 2012160249A5
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JP
Japan
Prior art keywords
transistor
negative bias
temperature instability
bias temperature
source electrode
Prior art date
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Application number
JP2011272993A
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English (en)
Japanese (ja)
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JP5988348B2 (ja
JP2012160249A (ja
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Publication date
Priority claimed from US13/016,353 external-priority patent/US8659322B2/en
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Publication of JP2012160249A publication Critical patent/JP2012160249A/ja
Publication of JP2012160249A5 publication Critical patent/JP2012160249A5/ja
Application granted granted Critical
Publication of JP5988348B2 publication Critical patent/JP5988348B2/ja
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JP2011272993A 2011-01-28 2011-12-14 負バイアス温度不安定性に耐性のあるラッチングセンスアンプを有するメモリおよび関連する方法 Active JP5988348B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/016,353 2011-01-28
US13/016,353 US8659322B2 (en) 2011-01-28 2011-01-28 Memory having a latching sense amplifier resistant to negative bias temperature instability and method therefor

Publications (3)

Publication Number Publication Date
JP2012160249A JP2012160249A (ja) 2012-08-23
JP2012160249A5 true JP2012160249A5 (enExample) 2015-02-05
JP5988348B2 JP5988348B2 (ja) 2016-09-07

Family

ID=46576844

Family Applications (1)

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JP2011272993A Active JP5988348B2 (ja) 2011-01-28 2011-12-14 負バイアス温度不安定性に耐性のあるラッチングセンスアンプを有するメモリおよび関連する方法

Country Status (3)

Country Link
US (1) US8659322B2 (enExample)
JP (1) JP5988348B2 (enExample)
KR (1) KR101914690B1 (enExample)

Families Citing this family (16)

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US8466707B2 (en) 2010-03-03 2013-06-18 Qualcomm Incorporated Method and apparatus for testing a memory device
US20150063010A1 (en) * 2013-08-27 2015-03-05 Synopsys, Inc. Negative bias thermal instability stress testing for static random access memory (sram)
US10127998B2 (en) * 2013-09-26 2018-11-13 Nxp Usa, Inc. Memory having one time programmable (OTP) elements and a method of programming the memory
KR20150124033A (ko) * 2014-04-25 2015-11-05 에스케이하이닉스 주식회사 전자 장치
US9496048B2 (en) 2015-03-12 2016-11-15 Qualcomm Incorporated Differential one-time-programmable (OTP) memory array
KR102485192B1 (ko) * 2016-03-18 2023-01-09 에스케이하이닉스 주식회사 반도체 집적 회로 장치
CN106531210B (zh) * 2016-10-11 2019-11-05 苏州宽温电子科技有限公司 一种改善p型nvm存储器nbti效应的差分架构存储单元
US10122347B2 (en) * 2017-04-03 2018-11-06 Intel Corporation Adaptive voltage system for aging guard-band reduction
US10211832B1 (en) * 2017-12-05 2019-02-19 Micron Technology, Inc. Input buffer circuit
CN108305653A (zh) * 2018-01-30 2018-07-20 苏州大学 一种存储器
WO2020112884A1 (en) * 2018-11-30 2020-06-04 Rambus Inc. Dram device with multiple voltage domains
JP7301544B2 (ja) 2019-01-25 2023-07-03 株式会社東芝 コンパレータ回路
US11327860B2 (en) * 2020-02-11 2022-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and methods for programming and reading memory device
US11469745B2 (en) * 2021-01-29 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Latch
IT202100024365A1 (it) * 2021-09-22 2023-03-22 St Microelectronics Srl Procedimento per accedere a celle di memoria, corrispondenti circuito e dispositivo di memorizzazione dati
US12277995B2 (en) 2021-11-17 2025-04-15 Samsung Electronics Co., Ltd. Page buffer circuit and memory device including the same

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US3991380A (en) * 1976-02-09 1976-11-09 Rca Corporation Complementary field effect transistor differential amplifier
US6762961B2 (en) 2002-04-16 2004-07-13 Sun Microsystems, Inc. Variable delay compensation for data-dependent mismatch in characteristic of opposing devices of a sense amplifier
US7177201B1 (en) 2003-09-17 2007-02-13 Sun Microsystems, Inc. Negative bias temperature instability (NBTI) preconditioning of matched devices
US7084671B1 (en) 2004-01-26 2006-08-01 Sun Microsystems, Inc. Sense amplifier and method for making the same
US7116602B2 (en) * 2004-07-15 2006-10-03 Micron Technology, Inc. Method and system for controlling refresh to avoid memory cell data losses
US7372746B2 (en) * 2005-08-17 2008-05-13 Micron Technology, Inc. Low voltage sensing scheme having reduced active power down standby current
KR100744148B1 (ko) * 2006-08-25 2007-08-01 삼성전자주식회사 안정적인 감지 증폭 동작을 수행하는 감지 증폭기 및 이를구비하는 입출력 감지 증폭 장치
US7688669B2 (en) 2007-02-15 2010-03-30 Stmicroelectronics, Inc. Programmable SRAM source bias scheme for use with switchable SRAM power supply sets of voltages
US7760537B2 (en) 2007-05-31 2010-07-20 Kabushiki Kaisha Toshiba Programmable ROM
JP5586582B2 (ja) * 2008-04-17 2014-09-10 イントリンシツク・イー・デー・ベー・ベー 負バイアス温度不安定性によるバーンインの発生を低減する方法
JP2010015614A (ja) * 2008-07-01 2010-01-21 Renesas Technology Corp 半導体装置
JP4960413B2 (ja) * 2009-08-26 2012-06-27 株式会社東芝 半導体記憶装置
JP2011134374A (ja) * 2009-12-22 2011-07-07 Toshiba Corp 半導体記憶装置
US8598912B2 (en) * 2010-06-14 2013-12-03 Micron Technology, Inc. Transistor voltage threshold mismatch compensated sense amplifiers and methods for precharging sense amplifiers
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JP2012064292A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体集積回路

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