KR101914690B1 - 네가티브 바이어스 온도 불안정에 견디는 래칭 센스 증폭기를 갖는 메모리 및 그 방법 - Google Patents

네가티브 바이어스 온도 불안정에 견디는 래칭 센스 증폭기를 갖는 메모리 및 그 방법 Download PDF

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KR101914690B1
KR101914690B1 KR1020120008414A KR20120008414A KR101914690B1 KR 101914690 B1 KR101914690 B1 KR 101914690B1 KR 1020120008414 A KR1020120008414 A KR 1020120008414A KR 20120008414 A KR20120008414 A KR 20120008414A KR 101914690 B1 KR101914690 B1 KR 101914690B1
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transistor
coupled
nbti
source electrode
sense amplifier
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KR20120087848A (ko
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알렉산더 비. 호플러
제임스 디. 버넷
스코트 아이. 레밍톤
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브이엘에스아이 테크놀로지 엘엘씨
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356182—Bistable circuits using complementary field-effect transistors with additional means for controlling the main nodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
KR1020120008414A 2011-01-28 2012-01-27 네가티브 바이어스 온도 불안정에 견디는 래칭 센스 증폭기를 갖는 메모리 및 그 방법 Active KR101914690B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/016,353 2011-01-28
US13/016,353 US8659322B2 (en) 2011-01-28 2011-01-28 Memory having a latching sense amplifier resistant to negative bias temperature instability and method therefor

Publications (2)

Publication Number Publication Date
KR20120087848A KR20120087848A (ko) 2012-08-07
KR101914690B1 true KR101914690B1 (ko) 2018-11-02

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KR1020120008414A Active KR101914690B1 (ko) 2011-01-28 2012-01-27 네가티브 바이어스 온도 불안정에 견디는 래칭 센스 증폭기를 갖는 메모리 및 그 방법

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US (1) US8659322B2 (enExample)
JP (1) JP5988348B2 (enExample)
KR (1) KR101914690B1 (enExample)

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US8466707B2 (en) 2010-03-03 2013-06-18 Qualcomm Incorporated Method and apparatus for testing a memory device
US20150063010A1 (en) * 2013-08-27 2015-03-05 Synopsys, Inc. Negative bias thermal instability stress testing for static random access memory (sram)
US10127998B2 (en) * 2013-09-26 2018-11-13 Nxp Usa, Inc. Memory having one time programmable (OTP) elements and a method of programming the memory
KR20150124033A (ko) * 2014-04-25 2015-11-05 에스케이하이닉스 주식회사 전자 장치
US9496048B2 (en) 2015-03-12 2016-11-15 Qualcomm Incorporated Differential one-time-programmable (OTP) memory array
KR102485192B1 (ko) * 2016-03-18 2023-01-09 에스케이하이닉스 주식회사 반도체 집적 회로 장치
CN106531210B (zh) * 2016-10-11 2019-11-05 苏州宽温电子科技有限公司 一种改善p型nvm存储器nbti效应的差分架构存储单元
US10122347B2 (en) * 2017-04-03 2018-11-06 Intel Corporation Adaptive voltage system for aging guard-band reduction
US10211832B1 (en) * 2017-12-05 2019-02-19 Micron Technology, Inc. Input buffer circuit
CN108305653A (zh) * 2018-01-30 2018-07-20 苏州大学 一种存储器
WO2020112884A1 (en) * 2018-11-30 2020-06-04 Rambus Inc. Dram device with multiple voltage domains
JP7301544B2 (ja) 2019-01-25 2023-07-03 株式会社東芝 コンパレータ回路
US11327860B2 (en) * 2020-02-11 2022-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and methods for programming and reading memory device
US11469745B2 (en) * 2021-01-29 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Latch
IT202100024365A1 (it) * 2021-09-22 2023-03-22 St Microelectronics Srl Procedimento per accedere a celle di memoria, corrispondenti circuito e dispositivo di memorizzazione dati
US12277995B2 (en) 2021-11-17 2025-04-15 Samsung Electronics Co., Ltd. Page buffer circuit and memory device including the same

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US20030198112A1 (en) * 2002-04-16 2003-10-23 Sun Microsystems, Inc. Variable delay compensation for data-dependent mismatch in characteristic of opposing devices of a sense amplifier

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US3991380A (en) * 1976-02-09 1976-11-09 Rca Corporation Complementary field effect transistor differential amplifier
US7177201B1 (en) 2003-09-17 2007-02-13 Sun Microsystems, Inc. Negative bias temperature instability (NBTI) preconditioning of matched devices
US7084671B1 (en) 2004-01-26 2006-08-01 Sun Microsystems, Inc. Sense amplifier and method for making the same
US7116602B2 (en) * 2004-07-15 2006-10-03 Micron Technology, Inc. Method and system for controlling refresh to avoid memory cell data losses
US7372746B2 (en) * 2005-08-17 2008-05-13 Micron Technology, Inc. Low voltage sensing scheme having reduced active power down standby current
KR100744148B1 (ko) * 2006-08-25 2007-08-01 삼성전자주식회사 안정적인 감지 증폭 동작을 수행하는 감지 증폭기 및 이를구비하는 입출력 감지 증폭 장치
US7688669B2 (en) 2007-02-15 2010-03-30 Stmicroelectronics, Inc. Programmable SRAM source bias scheme for use with switchable SRAM power supply sets of voltages
US7760537B2 (en) 2007-05-31 2010-07-20 Kabushiki Kaisha Toshiba Programmable ROM
JP5586582B2 (ja) * 2008-04-17 2014-09-10 イントリンシツク・イー・デー・ベー・ベー 負バイアス温度不安定性によるバーンインの発生を低減する方法
JP2010015614A (ja) * 2008-07-01 2010-01-21 Renesas Technology Corp 半導体装置
JP4960413B2 (ja) * 2009-08-26 2012-06-27 株式会社東芝 半導体記憶装置
JP2011134374A (ja) * 2009-12-22 2011-07-07 Toshiba Corp 半導体記憶装置
US8598912B2 (en) * 2010-06-14 2013-12-03 Micron Technology, Inc. Transistor voltage threshold mismatch compensated sense amplifiers and methods for precharging sense amplifiers
TWI431624B (zh) * 2010-08-19 2014-03-21 Faraday Tech Corp 依據資料動態供電之隨機存取記憶體
JP2012064292A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体集積回路

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JP5988348B2 (ja) 2016-09-07
JP2012160249A (ja) 2012-08-23
US8659322B2 (en) 2014-02-25
KR20120087848A (ko) 2012-08-07
US20120194222A1 (en) 2012-08-02

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