JP2013251040A5 - - Google Patents

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Publication number
JP2013251040A5
JP2013251040A5 JP2013116741A JP2013116741A JP2013251040A5 JP 2013251040 A5 JP2013251040 A5 JP 2013251040A5 JP 2013116741 A JP2013116741 A JP 2013116741A JP 2013116741 A JP2013116741 A JP 2013116741A JP 2013251040 A5 JP2013251040 A5 JP 2013251040A5
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JP
Japan
Prior art keywords
transistor
latch
precharge
sense amplifier
amplifier circuit
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Application number
JP2013116741A
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English (en)
Japanese (ja)
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JP2013251040A (ja
JP6161959B2 (ja
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Priority claimed from US13/488,432 external-priority patent/US8750018B2/en
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Publication of JP2013251040A publication Critical patent/JP2013251040A/ja
Publication of JP2013251040A5 publication Critical patent/JP2013251040A5/ja
Application granted granted Critical
Publication of JP6161959B2 publication Critical patent/JP6161959B2/ja
Active legal-status Critical Current
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JP2013116741A 2012-06-04 2013-06-03 抵抗式メモリのための感知増幅器回路 Active JP6161959B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/488,432 2012-06-04
US13/488,432 US8750018B2 (en) 2012-06-04 2012-06-04 Sense amplifier circuitry for resistive type memory

Publications (3)

Publication Number Publication Date
JP2013251040A JP2013251040A (ja) 2013-12-12
JP2013251040A5 true JP2013251040A5 (enExample) 2016-06-02
JP6161959B2 JP6161959B2 (ja) 2017-07-12

Family

ID=49670075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013116741A Active JP6161959B2 (ja) 2012-06-04 2013-06-03 抵抗式メモリのための感知増幅器回路

Country Status (4)

Country Link
US (1) US8750018B2 (enExample)
JP (1) JP6161959B2 (enExample)
KR (1) KR102183055B1 (enExample)
CN (1) CN103456341B (enExample)

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US9373418B2 (en) * 2014-01-02 2016-06-21 Advanced Micro Devices, Inc. Circuit and data processor with headroom monitoring and method therefor
KR102237735B1 (ko) 2014-06-16 2021-04-08 삼성전자주식회사 저항성 메모리 장치의 메모리 코어, 이를 포함하는 저항성 메모리 장치 및 저항성 메모리 장치의 데이터 감지 방법
US9142271B1 (en) * 2014-06-24 2015-09-22 Intel Corporation Reference architecture in a cross-point memory
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US9881661B2 (en) * 2016-06-03 2018-01-30 Micron Technology, Inc. Charge mirror-based sensing for ferroelectric memory
KR102571192B1 (ko) * 2016-08-29 2023-08-28 에스케이하이닉스 주식회사 센스 앰프, 이를 포함하는 비휘발성 메모리 장치 및 시스템
CN107871518B (zh) * 2016-09-28 2020-08-25 中国科学院宁波材料技术与工程研究所 基于阻变存储单元的逻辑运算器及利用其实现二元布尔逻辑运算的方法
US10304514B2 (en) * 2017-07-05 2019-05-28 Micron Technology, Inc. Self-reference sensing for memory cells
CN110998731B (zh) * 2017-07-26 2023-04-14 香港科技大学 混合忆阻器/场效应晶体管存储器单元及其信息编码方法
JP6773621B2 (ja) 2017-09-15 2020-10-21 株式会社東芝 演算装置
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US10748612B1 (en) * 2019-07-08 2020-08-18 National Tsing Hua University Sensing circuit with adaptive local reference generation of resistive memory and sensing method thereof
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KR102279048B1 (ko) * 2020-04-06 2021-07-16 연세대학교 산학협력단 저항성 메모리용 고속 고안정성을 가진 혼합형 감지 증폭기
TWI783473B (zh) 2020-05-28 2022-11-11 台灣積體電路製造股份有限公司 記憶體系統及其操作方法
US11887655B2 (en) 2020-08-13 2024-01-30 Anhui University Sense amplifier, memory, and method for controlling sense amplifier by configuring structures using switches
CN111933194B (zh) * 2020-09-01 2022-11-01 安徽大学 灵敏放大器、存储器和灵敏放大器的控制方法
US11862285B2 (en) 2020-09-01 2024-01-02 Anhui University Sense amplifier, memory and control method of sense amplifier
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