JP2013161863A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 230000002093 peripheral effect Effects 0.000 claims abstract description 7
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 46
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- 230000001070 adhesive effect Effects 0.000 claims description 7
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- 238000000926 separation method Methods 0.000 description 15
- 230000037303 wrinkles Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
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- 239000002253 acid Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68331—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. die mounting substrate
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- Manufacturing & Machinery (AREA)
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- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】本発明に係る半導体装置の製造方法は、外周端部に厚肉部を、中央部に薄肉部を有する半導体ウエハを準備する工程101と、半導体ウエハの一方の面に支持部材を装着する工程102と、半導体ウエハを厚肉部と薄肉部とに分割する工程103と、該分割後に、支持部材で薄肉部を支持した状態で薄肉部を切断する工程104とを備える。
【選択図】図1
Description
はじめに、図1を参照して、本実施の形態における半導体装置の製造方法の概略フローを説明する。まず、ステップ101にて、厚肉部と、半導体素子や配線が形成された薄肉部とを有する半導体ウエハを準備する。次に、ステップ102にて、支持部材を半導体ウエハの主表面と反対側に位置する裏面に装着する。その後、ステップ103にて、支持部材にて支持された状態で半導体ウエハを厚肉部と薄肉部とに分割する。分割後、ステップ104にて、半導体素子や配線が形成された薄肉部を、支持部材に支持された状態で個々の半導体装置に個片化する。
次に、図13と図14とを参照して、本発明の実施の形態2について説明する。本実施の形態の半導体装置の製造方法は、基本的に実施の形態1と同様の構成を備えているが、厚肉部1aを支持部材2から分離する工程の前に、厚肉部1aと接する部分における支持部材2の粘着力を低下させる工程を備える点で異なっている。
次に、本発明の実施の形態3について説明する。本実施の形態の半導体装置の製造方法は、基本的に実施の形態1と同様の構成を備えているが、薄肉部のダイシング工程をレーザダイシングにより実施する点で異なっている。
Claims (8)
- 外周端部に厚肉部を、中央部に薄肉部を有する半導体ウエハを準備する工程と、
前記半導体ウエハの一方の面に支持部材を装着する工程と、
前記支持部材の装着後に、前記半導体ウエハを前記厚肉部と前記薄肉部とに分割する工程と、
前記分割後に、前記支持部材で前記薄肉部を支持した状態で前記薄肉部を切断する工程と、を備える、半導体装置の製造方法。 - 前記分割後に前記厚肉部を前記支持部材から分離する工程をさらに備える、請求項1に記載の半導体装置の製造方法。
- 前記支持部材は粘着テープを含み、
前記粘着テープは、前記薄肉部から前記厚肉部にわたって貼付られる、請求項1または請求項2に記載の半導体装置の製造方法。 - 前記厚肉部を前記支持部材から分離した後に、
前記支持部材を伸張させる工程をさらに備える、請求項2または請求項3に記載の半導体装置の製造方法。 - 前記厚肉部を直接保持して分離する、請求項2〜請求項4のいずれか1項に記載の半導体装置の製造方法。
- 前記厚肉部を真空吸着することにより保持する、請求項5に記載の半導体装置の製造方法。
- 前記厚肉部を静電吸着することにより保持する、請求項5に記載の半導体装置の製造方法。
- 前記厚肉部を、前記粘着テープから分離する前に、前記厚肉部と接する部分における前記粘着テープの粘着力を低下させる工程を備える、請求項3〜請求項7のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012020829A JP5981154B2 (ja) | 2012-02-02 | 2012-02-02 | 半導体装置の製造方法 |
US13/708,358 US8993413B2 (en) | 2012-02-02 | 2012-12-07 | Method of manufacturing semiconductor device |
DE102012223093.9A DE102012223093B4 (de) | 2012-02-02 | 2012-12-13 | Verfahren zur Herstellung einer Halbleitervorrichtung |
KR1020130008382A KR101440393B1 (ko) | 2012-02-02 | 2013-01-25 | 반도체장치의 제조방법 |
CN201310040271.5A CN103295892B (zh) | 2012-02-02 | 2013-02-01 | 半导体装置的制造方法 |
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JP2012020829A JP5981154B2 (ja) | 2012-02-02 | 2012-02-02 | 半導体装置の製造方法 |
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JP2013161863A true JP2013161863A (ja) | 2013-08-19 |
JP2013161863A5 JP2013161863A5 (ja) | 2014-07-17 |
JP5981154B2 JP5981154B2 (ja) | 2016-08-31 |
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US (1) | US8993413B2 (ja) |
JP (1) | JP5981154B2 (ja) |
KR (1) | KR101440393B1 (ja) |
CN (1) | CN103295892B (ja) |
DE (1) | DE102012223093B4 (ja) |
Cited By (2)
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---|---|---|---|---|
WO2016170579A1 (ja) * | 2015-04-20 | 2016-10-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
JPWO2018185932A1 (ja) * | 2017-04-07 | 2019-06-27 | 三菱電機株式会社 | 半導体の製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5772092B2 (ja) * | 2011-03-11 | 2015-09-02 | 富士電機株式会社 | 半導体製造方法および半導体製造装置 |
JP5895676B2 (ja) * | 2012-04-09 | 2016-03-30 | 三菱電機株式会社 | 半導体装置の製造方法 |
WO2015079489A1 (ja) * | 2013-11-26 | 2015-06-04 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2021027305A (ja) * | 2019-08-09 | 2021-02-22 | 株式会社ディスコ | プラズマエッチング装置 |
CN111799152B (zh) * | 2020-07-20 | 2024-05-28 | 绍兴同芯成集成电路有限公司 | 一种晶圆双面金属工艺 |
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Also Published As
Publication number | Publication date |
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DE102012223093B4 (de) | 2018-11-29 |
DE102012223093A1 (de) | 2013-08-08 |
JP5981154B2 (ja) | 2016-08-31 |
KR20130089590A (ko) | 2013-08-12 |
US20130203241A1 (en) | 2013-08-08 |
CN103295892B (zh) | 2016-03-23 |
US8993413B2 (en) | 2015-03-31 |
CN103295892A (zh) | 2013-09-11 |
KR101440393B1 (ko) | 2014-09-15 |
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