JP5599342B2 - 半導体装置の製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Description
図1は、本発明の実施の形態1に係る半導体装置の製造方法を示すフローチャートである。この製造方法の概略について説明すると、半導体ウェハでのトランジスタ構造等の段差構造が形成された第1主面(以下「表面」と呼ぶ)上に、樹脂部材を形成した後、樹脂部材を加熱する。それから、半導体ウェハの第2主面(以下「裏面」と呼ぶ)に薄化加工がなされた後、樹脂部材を除去する。
図12は、本発明の実施の形態2に係る半導体装置の製造方法を示すフローチャートである。なお、本実施の形態に係る半導体装置の製造方法において、実施の形態1に係る製造方法の構成要素及び工程と類似するものについては同じ符号を付すものとし、以下、実施の形態1と大きく異なる部分を中心に説明する。
図15は、本発明の実施の形態3に係る半導体装置の製造方法を示すフローチャートである。なお、本実施の形態に係る半導体装置の製造方法において、実施の形態2に係る製造方法の構成要素及び工程と類似するものについては同じ符号を付すものとし、以下、実施の形態1と大きく異なる部分を中心に説明する。
Claims (8)
- (a)第1主面に段差構造を有する半導体ウェハの前記第1主面上に、熱可塑性樹脂からなる樹脂部材を塗布する工程と、
(b)前記樹脂部材を加熱して、当該樹脂部材の表面を平坦化する工程と
を備え、前記樹脂部材は前記半導体ウェハ側面上にも形成されており、
(c)前記工程(b)の後に、前記半導体ウェハの第2主面に対して、前記半導体ウェハの薄化加工を実施する工程と、
(d)前記工程(c)の後に、前記樹脂部材を前記半導体ウェハから除去する工程と
をさらに備える、半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
(e)前記工程(c)と前記工程(d)との間に、前記半導体ウェハの前記第2主面に拡散層を形成する工程と、
(f)前記工程(e)と前記工程(d)との間に、前記半導体ウェハの前記第2主面上に電極を形成する工程と
をさらに備える、半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法であって、
(g)前記工程(f)と前記工程(d)との間に、前記半導体ウェハの前記第2主面を、ダイシングテープにマウントする工程と、
(h)前記工程(g)と前記工程(d)との間に、前記半導体ウェハにダイシングを行うことによりチップに個片化する工程と
をさらに備える、半導体装置の製造方法。 - 請求項1乃至請求項3のいずれかに記載の半導体装置の製造方法であって、
(i)前記工程(b)と前記工程(c)との間に、前記樹脂部材の平坦化された表面上に表面保護テープを貼付する工程と、
(j)前記工程(c)と前記工程(d)との間に、前記表面保護テープを前記樹脂部材から剥離する工程と
をさらに備える、半導体装置の製造方法。 - 請求項1乃至請求項4のいずれかに記載の半導体装置の製造方法であって、
前記工程(c)後における、前記半導体ウェハ側面上に形成されている前記樹脂部材の厚さは、5μm以上である、半導体装置の製造方法。 - 請求項1または請求項2に記載の半導体装置の製造方法であって、
前記工程(d)において、硫酸と過酸化水素水とを含む混合液を用いて前記樹脂部材を除去する、半導体装置の製造方法。 - 請求項6に記載の半導体装置の製造方法であって、
前記工程(d)において、酸素を含むプラズマ処理を併用して前記樹脂部材を除去する、半導体装置の製造方法。 - (a)第1主面に段差構造を有する半導体ウェハの前記第1主面上に直に、熱可塑性樹脂からなる樹脂部材を塗布する工程と、
(b)前記樹脂部材を前記半導体ウェハよりも上側に配置した状態で加熱して、当該樹脂部材の表面を平坦化する工程と、
(c)前記工程(b)の後に、前記半導体ウェハの第2主面に対して、前記半導体ウェハの薄化加工を実施する工程と、
(d)前記工程(c)の後に、前記樹脂部材を前記半導体ウェハから除去する工程と
を備える、半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2011036654A JP5599342B2 (ja) | 2011-02-23 | 2011-02-23 | 半導体装置の製造方法 |
US13/231,198 US8574962B2 (en) | 2011-02-23 | 2011-09-13 | Method of manufacturing semiconductor device |
CN201110307815.0A CN102651314B (zh) | 2011-02-23 | 2011-10-12 | 半导体装置的制造方法 |
DE102011084525.9A DE102011084525B4 (de) | 2011-02-23 | 2011-10-14 | Verfahren zur Herstellung einer Halbleitervorrichtung |
KR1020120010588A KR101309675B1 (ko) | 2011-02-23 | 2012-02-02 | 반도체장치의 제조방법 |
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JP2011036654A JP5599342B2 (ja) | 2011-02-23 | 2011-02-23 | 半導体装置の製造方法 |
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JP2012174956A JP2012174956A (ja) | 2012-09-10 |
JP5599342B2 true JP5599342B2 (ja) | 2014-10-01 |
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US (1) | US8574962B2 (ja) |
JP (1) | JP5599342B2 (ja) |
KR (1) | KR101309675B1 (ja) |
CN (1) | CN102651314B (ja) |
DE (1) | DE102011084525B4 (ja) |
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JP5959188B2 (ja) * | 2011-12-05 | 2016-08-02 | 株式会社ディスコ | ウエーハの加工方法 |
JPWO2014038310A1 (ja) * | 2012-09-07 | 2016-08-08 | 富士電機株式会社 | 半導体素子の製造方法 |
JP5995640B2 (ja) * | 2012-10-10 | 2016-09-21 | 三菱電機株式会社 | 半導体装置の製造方法 |
US8785234B2 (en) | 2012-10-31 | 2014-07-22 | Infineon Technologies Ag | Method for manufacturing a plurality of chips |
JP6265594B2 (ja) | 2012-12-21 | 2018-01-24 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法、及び半導体装置 |
CN103151371A (zh) | 2013-03-05 | 2013-06-12 | 矽力杰半导体技术(杭州)有限公司 | 一种晶圆结构以及应用其的功率器件 |
CN103199104B (zh) | 2013-03-05 | 2016-04-27 | 矽力杰半导体技术(杭州)有限公司 | 一种晶圆结构以及应用其的功率器件 |
JP6054234B2 (ja) * | 2013-04-22 | 2016-12-27 | 株式会社ディスコ | ウエーハの加工方法 |
EP3152120B1 (en) * | 2014-06-06 | 2020-06-24 | The Procter and Gamble Company | Faceted container |
JP2015233034A (ja) * | 2014-06-09 | 2015-12-24 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2016111139A (ja) * | 2014-12-04 | 2016-06-20 | 株式会社ディスコ | ウエーハの加工方法 |
USD865526S1 (en) | 2015-12-04 | 2019-11-05 | The Procter & Gamble Company | Bottle |
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USD931107S1 (en) | 2017-09-08 | 2021-09-21 | The Procter & Gamble Company | Bottle |
JP6762396B2 (ja) * | 2019-04-04 | 2020-09-30 | 三菱電機株式会社 | 半導体装置の製造方法 |
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DE102008042168A1 (de) | 2008-09-17 | 2010-03-18 | Robert Bosch Gmbh | Bremsscheibe |
US20100264566A1 (en) | 2009-03-17 | 2010-10-21 | Suss Microtec Inc | Rapid fabrication of a microelectronic temporary support for inorganic substrates |
JP2011029483A (ja) | 2009-07-28 | 2011-02-10 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
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