JP2013065843A - 半導体装置および半導体装置の作製方法 - Google Patents
半導体装置および半導体装置の作製方法 Download PDFInfo
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- JP2013065843A JP2013065843A JP2012190773A JP2012190773A JP2013065843A JP 2013065843 A JP2013065843 A JP 2013065843A JP 2012190773 A JP2012190773 A JP 2012190773A JP 2012190773 A JP2012190773 A JP 2012190773A JP 2013065843 A JP2013065843 A JP 2013065843A
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- 229910052709 silver Inorganic materials 0.000 description 1
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Abstract
【解決手段】ゲート電極と、ゲート電極上に形成されたゲート絶縁膜と、ゲート絶縁膜上に形成された酸化物半導体膜と、酸化物半導体膜上に形成されたソース電極およびドレイン電極と、保護膜と、を有し、該保護膜は金属酸化膜を有し、該金属酸化膜は、膜密度が3.2g/cm3以上である。
【選択図】図1
Description
本実施の形態は、本発明の一態様であるトランジスタを有する半導体装置およびその作製方法について、図1乃至図3を用いて説明する。
図1は酸化物半導体膜を有する半導体装置の断面図である。図1に示すトランジスタ150は、下地絶縁膜104が設けられた絶縁表面を有する基板102上に形成されたゲート電極106と、下地絶縁膜104およびゲート電極106上に形成されたゲート絶縁膜108と、ゲート絶縁膜108上に形成された酸化物半導体膜110と、ゲート絶縁膜108および酸化物半導体膜110上に形成されたソース電極112aおよびドレイン電極112bと、酸化物半導体膜110、ソース電極112aおよびドレイン電極112b上に形成された保護膜114と、を有し、保護膜114は、酸化物絶縁膜114aと、金属酸化膜114bと、の積層膜を用いている。
トランジスタ150の作製方法について図2および図3を用いて説明する。
本実施の形態は、本発明の他の一態様であるトランジスタを有する半導体装置およびその作製方法について、図4を用いて説明する。
図4は、酸化物半導体膜を有する半導体装置の断面図である。図4に示すトランジスタ250は、下地絶縁膜104が設けられた絶縁表面を有する基板102上に形成されたゲート電極106と、下地絶縁膜104およびゲート電極106上に形成されたゲート絶縁膜208aと、ゲート絶縁膜208a上に形成された金属酸化膜208bと、金属酸化膜208b上に形成された酸化物半導体膜110と、金属酸化膜208bおよび酸化物半導体膜110上に形成されたソース電極112aおよびドレイン電極112bと、酸化物半導体膜110、ソース電極112aおよびドレイン電極112b上に形成された保護膜114と、を有し、保護膜114は、酸化物絶縁膜114aと金属酸化膜114bと、の積層膜を用いている。
トランジスタ250の作製方法について説明する。
実施の形態1で例示したトランジスタを用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを含む駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。上記実施の形態で説明した半導体装置を具備する電子機器の例について説明する。
104 下地絶縁膜
106 ゲート電極
108 ゲート絶縁膜
110 酸化物半導体膜
112a ソース電極
112b ドレイン電極
114 保護膜
114a 酸化物絶縁膜
114b 金属酸化膜
150 トランジスタ
208a ゲート絶縁膜
208b 金属酸化膜
250 トランジスタ
401 第1の基板
402 画素部
403 信号線駆動回路
404 走査線駆動回路
405 シール材
406 基板
408 液晶層
410 トランジスタ
411 トランジスタ
413 液晶素子
415 接続端子電極層
416 端子電極層
418 FPC
418a FPC
418b FPC
419 異方性導電膜
420 保護膜
421 絶縁膜
423 絶縁膜
424 保護膜
430 第1の電極層
431 第2の電極層
432 絶縁膜
433 絶縁膜
435 スペーサ
451 隔壁
452 電界発光層
453 発光素子
454 充填材
502 ガラス基板
504a 酸化シリコン膜
504b 酸化シリコン膜
505 窒化シリコン膜
512a 金属酸化膜
512b 金属酸化膜
513a 金属酸化膜
513b 金属酸化膜
514 金属酸化膜
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカー
2800 筐体
2801 筐体
2802 表示パネル
2803 スピーカー
2804 マイクロフォン
2805 操作キー
2806 ポインティングデバイス
2807 カメラ用レンズ
2808 外部接続端子
2810 太陽電池セル
2811 外部メモリスロット
3001 本体
3002 筐体
3003 表示部
3004 キーボード
3021 本体
3022 スタイラス
3023 表示部
3024 操作ボタン
3025 外部インターフェイス
3051 本体
3053 接眼部
3054 操作スイッチ
3056 バッテリー
9601 筐体
9603 表示部
9605 スタンド
Claims (14)
- ゲート電極と、
前記ゲート電極上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成された酸化物半導体膜と、
前記酸化物半導体膜上に形成されたソース電極およびドレイン電極と、
前記酸化物半導体膜、前記ソース電極および前記ドレイン電極上に形成された保護膜と、を有し、
前記保護膜は、酸化物絶縁膜上に金属酸化膜がある積層膜であり、
前記金属酸化膜は、膜密度が3.2g/cm3以上である半導体装置。 - ゲート電極と、
前記ゲート電極上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成された酸化物半導体膜と、
前記酸化物半導体膜上に形成されたソース電極およびドレイン電極と、
前記酸化物半導体膜、前記ソース電極および前記ドレイン電極上に形成された保護膜と、を有し、
前記保護膜は、酸化物絶縁膜上に金属酸化膜がある積層膜であり、
前記金属酸化膜は、酸化アルミニウムを含む膜であり、
前記金属酸化膜の膜密度が3.2g/cm3以上である半導体装置。 - 前記保護膜の前記金属酸化膜に接して導電膜がある請求項1または請求項2に記載の半導体装置。
- 前記導電膜は、酸化亜鉛、インジウム錫酸化物、酸化チタン、アルミニウムおよびチタンの導体の中から、少なくともいずれか一種を含む請求項3に記載の半導体装置。
- 前記酸化物半導体膜は、インジウム、亜鉛、ガリウム、ジルコニウム、スズ、ガドリニウム、チタンおよびセリウムの酸化物の中から、少なくともいずれか一種を含む請求項1乃至請求項4に記載の半導体装置。
- 前記ゲート絶縁膜上に接して金属酸化膜が積層されている請求項1乃至請求項5に記載の半導体装置。
- 前記ゲート電極の下で接している下地絶縁膜を有し、
前記下地絶縁膜は、前記ゲート電極と接する面に金属酸化膜を有し、
前記金属酸化膜の膜密度が3.2g/cm3以上である請求項1乃至請求項6に記載の半導体装置。 - ゲート電極を形成し、
前記ゲート電極上にゲート絶縁膜を形成し、
前記ゲート絶縁膜形成後に加熱処理し、
前記ゲート絶縁膜上に酸化物半導体膜を形成し、
前記酸化物半導体膜上にソース電極およびドレイン電極を形成し、
前記ソース電極および前記ドレイン電極形成後に保護膜を形成し、
前記保護膜は、酸化物絶縁膜上に金属酸化膜がある積層膜で形成され、
前記金属酸化膜は、膜密度が3.2g/cm3以上である半導体装置の作製方法。 - ゲート電極を形成し、
前記ゲート電極上にゲート絶縁膜を形成し、
前記ゲート絶縁膜形成後に加熱処理し、
前記ゲート絶縁膜上に酸化物半導体膜を形成し、
前記酸化物半導体膜上にソース電極およびドレイン電極を形成し、
前記ソース電極および前記ドレイン電極形成後に保護膜を形成し、
前記保護膜は、酸化物絶縁膜上に金属酸化膜がある積層膜で形成され、
前記金属酸化膜は、酸化アルミニウムを含む膜であり、
前記金属酸化膜の膜密度が3.2g/cm3以上である半導体装置の作製方法。 - 前記保護膜の前記金属酸化膜に接して導電膜を形成する請求項8または請求項9に記載の半導体装置の作製方法。
- 前記導電膜は、酸化亜鉛、インジウム錫酸化物、酸化チタン、アルミニウムおよびチタンの導体の中から、少なくともいずれか一種を含む請求項10に記載の半導体装置の作製方法。
- 前記酸化物半導体膜は、インジウム、亜鉛、ガリウム、ジルコニウム、スズ、ガドリニウム、チタンおよびセリウムの酸化物の中から、少なくともいずれか一種を含む請求項8乃至請求項11に記載の半導体装置の作製方法。
- 前記ゲート絶縁膜上に接して、金属酸化膜が積層されている請求項8乃至請求項12に記載の半導体装置の作製方法。
- 前記ゲート電極の下で接している下地絶縁膜を有し、
前記下地絶縁膜は、前記ゲート電極に接する金属酸化膜を有し、
前記金属酸化膜の膜密度が3.2g/cm3以上である請求項8乃至請求項13に記載の半導体装置の作製方法。
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US11302717B2 (en) | 2016-04-08 | 2022-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the same |
Also Published As
Publication number | Publication date |
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JP2018067721A (ja) | 2018-04-26 |
US20160079433A1 (en) | 2016-03-17 |
KR20130024849A (ko) | 2013-03-08 |
TWI594425B (zh) | 2017-08-01 |
US9252279B2 (en) | 2016-02-02 |
US20130048977A1 (en) | 2013-02-28 |
TW201324769A (zh) | 2013-06-16 |
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