JP2012527117A - シリコンカーバイドデバイス用の拡散接合終端構造及びこれを組み込むシリコンカーバイドデバイスの製造方法 - Google Patents
シリコンカーバイドデバイス用の拡散接合終端構造及びこれを組み込むシリコンカーバイドデバイスの製造方法 Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 105
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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Abstract
【選択図】図2A
Description
本出願は、2009年5月12日出願の米国特許仮出願第61/177,372号明細書の恩典及びそれに対する優先権を請求し、この出願の開示内容は、これによりその全部が引用によって組み込まれる。
本発明は、「米国陸軍研究所」によって付与された契約番号W911NF−04−2−0022の下で米国政府の支援を受けて行われたものである。米国政府は、本発明においてある一定の権利を有する。
14 n+シリコンカーバイド基板
52 マスク
Ld 横幅
Lnd 隣接開口部の間の間隔
Claims (28)
- 電子デバイスのための接合終端拡張部を形成する方法であって、
複数の開口部を含むマスクを主接合領域に隣接して第1の導電型を有する半導体層上に形成する段階と、
前記半導体層内に第2の導電型のドーパントの供給源を設ける段階と、
前記第2の導電型のドーパントを前記半導体層内に拡散させて、合体する前記マスク開口部のそれぞれの1つに対応するドープ領域を該半導体層に形成し、同時に該半導体層の面の近くの該マスク開口部のそれぞれの1つに対応するドーパントピークを該半導体層に残す段階と、
前記ドーパントピークを含む前記半導体層の近面領域を除去する段階と、
を含むことを特徴とする方法。 - 前記マスク開口部は、前記主接合領域からの横距離と共に小さくなる前記半導体層の面の各区域を露出させるそれぞれの区域を有することを特徴とする請求項1に記載の方法。
- 前記ドープ領域は、前記主接合領域からの距離と共に減少する横方向ドーピング勾配を有する拡散接合終端領域を前記半導体層に提供することを特徴とする請求項1に記載の方法。
- 前記半導体層は、シリコンカーバイド層を含むことを特徴とする請求項1に記載の方法。
- 前記シリコンカーバイド層の前記近面領域を除去する段階は、前記ドーパントピークを含む材料を該シリコンカーバイド層から除去する段階を含むことを特徴とする請求項4に記載の方法。
- 前記第2の導電型のドーパントを拡散させる段階は、該第2の導電型のドーパントを含む前記シリコンカーバイド層を1800℃を超える温度でアニールする段階を含むことを特徴とする請求項4に記載の方法。
- 前記シリコンカーバイド層上にグラファイトキャップ層を形成する段階を更に含み、
前記シリコンカーバイド層をアニールする段階は、該シリコンカーバイド層と前記グラファイトキャップ層とをアニールする段階を含む、
ことを特徴とする請求項6に記載の方法。 - ドーパント拡散ピークの除去後の前記シリコンカーバイド層の第2の導電型のドーパントのピーク電荷が、約1×1014cm-2又はそれ未満であることを特徴とする請求項4に記載の方法。
- 前記接合終端領域は、前記主接合領域から横方向に離れる方向に減少するピークドーパント濃度を有することを特徴とする請求項4に記載の方法。
- 第2の導電ドーパントの前記供給源は、前記複数の開口部に対応する位置で前記シリコンカーバイド層にピークドーパント濃度を提供することを特徴とする請求項4に記載の方法。
- 前記複数の開口部は、横幅Ld及び隣接開口部間の間隔Lndを有し、
Ldは、前記主接合領域からの距離と共に減少し、及び/又はLndは、該主接合領域からの幅と共に増大する、
ことを特徴とする請求項4に記載の方法。 - Ldが、約2.5μmから約1μmまで変化することを特徴とする請求項11に記載の方法。
- Lndが、約2μmであることを特徴とする請求項11に記載の方法。
- 前記マスクは、前記主接合領域に最も近い第1の区画と、該第1の区画から該主接合領域からより遠い第2の区画とを含む複数の区画を含み、
前記第1の区画において、隣接開口部間の前記間隔Lndは、前記主接合領域からの距離に対して一定に留まり、該開口部の前記横幅Ldは、該主接合領域からの距離と共に減少し、
前記第2の区画において、隣接開口部間の前記間隔Lndは、前記主接合領域からの距離と共に増大し、該開口部の前記横幅Ldは、該主接合領域からの距離に対して一定に留まる、
ことを特徴とする請求項11に記載の方法。 - 前記マスクは、前記第2の区画よりも前記主接合領域から遠い第3の区画を含み、
前記第3の区画において、前記開口部の前記横幅Ldは、前記主接合部からの距離に対して一定に留まり、隣接開口部間の前記間隔Lndは、該主接合領域からの距離と共に増大する量だけ増大する、
ことを特徴とする請求項14に記載の方法。 - 前記第2の導電型のドーパントの供給源を設ける段階は、第2の導電型のドーパントを前記半導体層内に注入する段階を含むことを特徴とする請求項1に記載の方法。
- 前記第2の導電型のドーパントの供給源を設ける段階は、第2の導電ドーパントの拡散源を該拡散源の第2の導電ドーパントを前記半導体層内に拡散させるように該半導体層に隣接して設ける段階を含むことを特徴とする請求項1に記載の方法。
- 前記接合終端領域は、横方向に滑らかに減少するピークドーパント濃度を有することを特徴とする請求項1に記載の方法。
- 第1の導電型を有し、かつ層の面に隣接して主接合部を含むシリコンカーバイド層と、
前記主接合部に隣接して前記シリコンカーバイド層の前記面にあり、かつ前記第1の導電型とは反対の第2の導電型を有する接合終端領域であって、該接合終端領域の電荷が該主接合部からの横距離と共に減少し、該接合終端領域の最大電荷が約2×1014cm-2未満である前記接合終端領域と、
を含むことを特徴とする電子デバイス。 - 前記接合終端領域は、横幅LJTEを有することを特徴とする請求項19に記載の電子デバイス。
- 前記接合終端領域の最大電荷が、約1×1014cm-2未満であることを特徴とする請求項19に記載の電子デバイス。
- 前記接合終端領域の最大ドーピング濃度が、約5×1018cm-3であることを特徴とする請求項19に記載の電子デバイス。
- 前記シリコンカーバイド層の面に半導体メサを更に含み、
前記接合終端領域は、前記半導体メサに隣接する、
ことを特徴とする請求項19に記載の電子デバイス。 - 前記半導体メサは、約0.2μmの高さを有することを特徴とする請求項23に記載の電子デバイス。
- 前記シリコンカーバイド層の面の近くの前記接合終端領域の電荷が、前記主接合部の近くの前記最大電荷から約5×1012cm-2まで滑らかな方式で横方向に減少することを特徴とする請求項19に記載の電子デバイス。
- 前記接合終端領域の前記電荷は、前記主接合部からの横距離と共に滑らかに減少することを特徴とする請求項19に記載の電子デバイス。
- 前記接合終端領域は、アルミニウムドーパント及び/又はホウ素ドーパントでドープされることを特徴とする請求項19に記載の電子デバイス。
- 第1の導電型を有し、かつ層の面に隣接して主接合部を含むシリコンカーバイド層と、
前記主接合部に隣接する前記シリコンカーバイド層の前記面における接合終端領域であって、該接合終端領域が、該1次接合部に隣接する領域に約5×1012cm-2又はそれ未満の全電荷を有する第2の導電型のドーパントの領域を含み、該接合終端領域の該全電荷が、近似的に線形方式で該主接合部からの距離と共に減少する前記接合終端領域と、
を含むことを特徴とする電子デバイス。
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US8637386B2 (en) | 2014-01-28 |
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US20140097450A1 (en) | 2014-04-10 |
JP5804602B2 (ja) | 2015-11-04 |
EP2430651A1 (en) | 2012-03-21 |
US20100289032A1 (en) | 2010-11-18 |
CN107093554A (zh) | 2017-08-25 |
CN107093554B (zh) | 2021-02-05 |
WO2010132144A1 (en) | 2010-11-18 |
US9570560B2 (en) | 2017-02-14 |
KR101709364B1 (ko) | 2017-02-22 |
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