JP2012216791A - 酸化物半導体膜及び半導体装置 - Google Patents

酸化物半導体膜及び半導体装置 Download PDF

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Publication number
JP2012216791A
JP2012216791A JP2012062920A JP2012062920A JP2012216791A JP 2012216791 A JP2012216791 A JP 2012216791A JP 2012062920 A JP2012062920 A JP 2012062920A JP 2012062920 A JP2012062920 A JP 2012062920A JP 2012216791 A JP2012216791 A JP 2012216791A
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Prior art keywords
film
indium zinc
zinc oxide
oxide semiconductor
crystal structure
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Japanese (ja)
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JP2012216791A5 (enExample
Inventor
Tatsuya Honda
達也 本田
Hiroshi Kanemura
大志 金村
Kengo Akimoto
健吾 秋元
Suzunosuke Hiraishi
鈴之介 平石
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012062920A priority Critical patent/JP2012216791A/ja
Publication of JP2012216791A publication Critical patent/JP2012216791A/ja
Publication of JP2012216791A5 publication Critical patent/JP2012216791A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2012062920A 2011-03-25 2012-03-20 酸化物半導体膜及び半導体装置 Withdrawn JP2012216791A (ja)

Priority Applications (1)

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JP2012062920A JP2012216791A (ja) 2011-03-25 2012-03-20 酸化物半導体膜及び半導体装置

Applications Claiming Priority (3)

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JP2011068436 2011-03-25
JP2011068436 2011-03-25
JP2012062920A JP2012216791A (ja) 2011-03-25 2012-03-20 酸化物半導体膜及び半導体装置

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JP2012216791A5 JP2012216791A5 (enExample) 2015-03-26

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JP2016208489A Active JP6223526B2 (ja) 2011-03-25 2016-10-25 酸化物半導体膜の作製方法、半導体装置の作製方法
JP2017193224A Active JP6389942B2 (ja) 2011-03-25 2017-10-03 表示装置

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JP2017193224A Active JP6389942B2 (ja) 2011-03-25 2017-10-03 表示装置

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US (3) US8686416B2 (enExample)
JP (3) JP2012216791A (enExample)
KR (2) KR101972758B1 (enExample)
TW (2) TWI574401B (enExample)

Cited By (7)

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KR20150016144A (ko) * 2013-08-02 2015-02-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
JP2019186573A (ja) * 2014-03-14 2019-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2019192927A (ja) * 2013-09-25 2019-10-31 株式会社半導体エネルギー研究所 半導体装置
JP2020060769A (ja) * 2013-05-03 2020-04-16 株式会社半導体エネルギー研究所 半導体装置
JP2021114608A (ja) * 2012-12-25 2021-08-05 株式会社半導体エネルギー研究所 表示装置
JP2024041764A (ja) * 2012-12-28 2024-03-27 株式会社半導体エネルギー研究所 表示装置
WO2025177133A1 (ja) * 2024-02-22 2025-08-28 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法

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KR101932576B1 (ko) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR102505248B1 (ko) * 2010-12-03 2023-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
US8686416B2 (en) 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP6053098B2 (ja) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 半導体装置
KR102108248B1 (ko) * 2012-03-14 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막, 트랜지스터, 및 반도체 장치
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP2014003594A (ja) 2012-05-25 2014-01-09 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
KR102161077B1 (ko) 2012-06-29 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9535277B2 (en) 2012-09-05 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Conductive oxide film, display device, and method for forming conductive oxide film
KR20220150439A (ko) 2012-11-08 2022-11-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 디스플레이 장치
US8981374B2 (en) * 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6421446B2 (ja) * 2013-06-28 2018-11-14 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置及びシステム
JP6308435B2 (ja) * 2013-07-25 2018-04-11 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
CN103529581A (zh) * 2013-10-18 2014-01-22 京东方科技集团股份有限公司 显示面板及显示装置
CN106876281B (zh) * 2017-04-27 2020-12-08 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板

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