JP2015046594A - 酸化物半導体膜および半導体装置 - Google Patents
酸化物半導体膜および半導体装置 Download PDFInfo
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- JP2015046594A JP2015046594A JP2014156797A JP2014156797A JP2015046594A JP 2015046594 A JP2015046594 A JP 2015046594A JP 2014156797 A JP2014156797 A JP 2014156797A JP 2014156797 A JP2014156797 A JP 2014156797A JP 2015046594 A JP2015046594 A JP 2015046594A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 297
- 239000000758 substrate Substances 0.000 claims abstract description 162
- 239000000523 sample Substances 0.000 claims abstract description 121
- 230000005540 biological transmission Effects 0.000 claims abstract description 69
- 238000002524 electron diffraction data Methods 0.000 claims abstract description 54
- 238000002003 electron diffraction Methods 0.000 claims abstract description 8
- 239000011701 zinc Substances 0.000 claims description 55
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 19
- 229910052725 zinc Inorganic materials 0.000 claims description 19
- 229910052733 gallium Inorganic materials 0.000 claims description 18
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 17
- 238000010894 electron beam technology Methods 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 230000007547 defect Effects 0.000 abstract description 19
- 125000004429 atom Chemical group 0.000 description 96
- 239000013078 crystal Substances 0.000 description 85
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 74
- 239000001301 oxygen Substances 0.000 description 74
- 229910052760 oxygen Inorganic materials 0.000 description 74
- 230000015572 biosynthetic process Effects 0.000 description 69
- 239000007789 gas Substances 0.000 description 68
- 239000010410 layer Substances 0.000 description 63
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 58
- 239000003990 capacitor Substances 0.000 description 58
- 239000008188 pellet Substances 0.000 description 55
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 48
- 238000012546 transfer Methods 0.000 description 48
- 238000000151 deposition Methods 0.000 description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 41
- 230000008021 deposition Effects 0.000 description 40
- 229910052814 silicon oxide Inorganic materials 0.000 description 39
- 238000000034 method Methods 0.000 description 37
- 229910052581 Si3N4 Inorganic materials 0.000 description 35
- 230000006870 function Effects 0.000 description 35
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 35
- 239000001257 hydrogen Substances 0.000 description 34
- 229910052739 hydrogen Inorganic materials 0.000 description 34
- 238000010438 heat treatment Methods 0.000 description 33
- 239000012535 impurity Substances 0.000 description 33
- 238000005259 measurement Methods 0.000 description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 29
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 29
- 229910052786 argon Inorganic materials 0.000 description 29
- 229910052802 copper Inorganic materials 0.000 description 29
- 239000010949 copper Substances 0.000 description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 26
- 238000003917 TEM image Methods 0.000 description 25
- 238000003776 cleavage reaction Methods 0.000 description 25
- 239000004973 liquid crystal related substance Substances 0.000 description 25
- 230000007017 scission Effects 0.000 description 25
- 239000011787 zinc oxide Substances 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 230000001681 protective effect Effects 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- 150000004767 nitrides Chemical class 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 238000003860 storage Methods 0.000 description 19
- 239000000126 substance Substances 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 15
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 229910007541 Zn O Inorganic materials 0.000 description 14
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 13
- 239000012298 atmosphere Substances 0.000 description 12
- 238000004364 calculation method Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 229910001868 water Inorganic materials 0.000 description 12
- 230000007246 mechanism Effects 0.000 description 11
- 238000012545 processing Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 238000012916 structural analysis Methods 0.000 description 9
- 239000002156 adsorbate Substances 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 150000002431 hydrogen Chemical class 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 238000003795 desorption Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 238000004435 EPR spectroscopy Methods 0.000 description 5
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 229910000423 chromium oxide Inorganic materials 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- SHXXPRJOPFJRHA-UHFFFAOYSA-K iron(iii) fluoride Chemical compound F[Fe](F)F SHXXPRJOPFJRHA-UHFFFAOYSA-K 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 2
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000000329 molecular dynamics simulation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052696 pnictogen Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- UWCWUCKPEYNDNV-LBPRGKRZSA-N 2,6-dimethyl-n-[[(2s)-pyrrolidin-2-yl]methyl]aniline Chemical compound CC1=CC=CC(C)=C1NC[C@H]1NCCC1 UWCWUCKPEYNDNV-LBPRGKRZSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000004976 Lyotropic liquid crystal Substances 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 241001591005 Siga Species 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 239000004974 Thermotropic liquid crystal Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910007610 Zn—Sn Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000000779 annular dark-field scanning transmission electron microscopy Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- XJVBHCCEUWWHMI-UHFFFAOYSA-N argon(.1+) Chemical compound [Ar+] XJVBHCCEUWWHMI-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- KMHJKRGRIJONSV-UHFFFAOYSA-N dioxygen(.1+) Chemical compound [O+]=O KMHJKRGRIJONSV-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000003696 structure analysis method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
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Abstract
Description
以下では、本実施の形態に係る結晶性を有する酸化物半導体膜であるCAAC−OS(C−Axis Aligned Crystalline Oxide Semiconductor)膜について説明する。CAAC−OS膜は、a軸およびb軸の配向は不規則であるが、c軸配向性を有し、かつc軸が被形成面または上面の法線ベクトルに平行な方向を向いている酸化物半導体膜である。
以下では、CAAC−OS膜の作製方法について説明する。
CAAC−OS膜は、結晶中の劈開面を利用して成膜することができる。以下では、スパッタリング法によるCAAC−OS膜の成膜モデルについて説明する。
以下では、前述したCAAC−OS膜を成膜することが可能な成膜装置について説明する。
上述したCAAC−OS膜は、例えば、トランジスタの半導体膜などとして用いることができる。
以下では、本発明の一態様に係るトランジスタの構造および作製方法について説明する。
まず、トップゲートトップコンタクト型のトランジスタの一例について説明する。
まず、トップゲートトップコンタクト型のトランジスタのトランジスタ構造(1)と異なる例について説明する。
次に、ボトムゲートトップコンタクト型のトランジスタの一例について説明する。
以下では、上述したトランジスタを適用した表示装置について説明する。
以下では、上述したトランジスタを有する半導体記憶装置であるメモリセルの回路構成およびその動作について、図24を参照して説明する。
以下では、メモリ1と異なる半導体記憶装置の回路構成およびその動作について、図25を参照して説明する。
図26は、上述したトランジスタまたは半導体記憶装置を少なくとも一部に用いたCPUの具体的な構成を示すブロック図である。
図27(A)において、テレビジョン装置8000は、筐体8001に表示部8002が組み込まれており、表示部8002により映像を表示し、スピーカー部8003から音声を出力することが可能である。
12 光学系
14 試料室
16 光学系
18 カメラ
20 観察室
22 フィルム室
24 電子
28 物質
32 蛍光板
100 ペレット
100a ペレット
100b ペレット
101 イオン
102 柱状酸化亜鉛クラスタ
103 CAAC−OS膜
104 酸化亜鉛分子
105 劈開面
107 プラズマ
120 基板
130 ターゲット
140 ガス供給口
150 排気口
160 排出物
170 成膜室
200 基板
202 下地絶縁膜
204 ゲート電極
206 酸化物半導体膜
212 ゲート絶縁膜
216a ソース電極
216b ドレイン電極
218 保護絶縁膜
226a 配線
226b 配線
300 基板
302 下地絶縁膜
304 ゲート電極
306 酸化物半導体膜
312 ゲート絶縁膜
316a ソース電極
316b ドレイン電極
318 保護絶縁膜
326a 配線
326b 配線
400 基板
404 ゲート電極
406 酸化物半導体膜
412 ゲート絶縁膜
416a ソース電極
416b ドレイン電極
418 保護絶縁膜
426a 配線
426b 配線
500 メモリセル
511 トランジスタ
512 トランジスタ
513 トランジスタ
514 容量素子
600 記憶装置
602 記憶素子部
604 駆動回路
606 駆動回路
608 記憶素子
610 記憶回路
612 記憶回路
614 トランジスタ
616 トランジスタ
618 トランジスタ
620 トランジスタ
622 トランジスタ
624 トランジスタ
626 トランジスタ
628 トランジスタ
630 端子
632 端子
634 端子
636 端子
638 端子
640 データ保持部
642 データ保持部
644 データ保持部
646 データ保持部
648 容量素子
650 容量素子
700 成膜装置
701 大気側基板供給室
702 大気側基板搬送室
703a ロードロック室
703b アンロードロック室
704 搬送室
705 基板加熱室
706a 成膜室
706b 成膜室
706c 成膜室
751 クライオトラップ
752 ステージ
761 カセットポート
762 アライメントポート
763 搬送ロボット
764 ゲートバルブ
765 加熱ステージ
766 ターゲット
767 防着板
768 基板ステージ
769 基板
770 真空ポンプ
771 クライオポンプ
772 ターボ分子ポンプ
780 マスフローコントローラ
781 精製機
782 ガス加熱機構
811 基板
813 ゲート電極
815 ゲート絶縁膜
815a 窒化物絶縁膜
815b 酸化物絶縁膜
817a 酸化物半導体膜
817b 導電膜
819 電極
820 電極
883 酸化物絶縁膜
885 酸化物絶縁膜
887 窒化物絶縁膜
891 ゲート電極
892 電極
893 開口部
894 開口部
901 画素部
902 トランジスタ
903 画素
904 走査線駆動回路
905 容量素子
905a 容量素子
906 信号線駆動回路
907 走査線
909 信号線
915 容量線
921 液晶素子
931 発光素子
933 トランジスタ
935 トランジスタ
937 配線
939 配線
941 配線
1141 スイッチング素子
1142 メモリセル
1143 メモリセル群
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
8000 テレビジョン装置
8001 筐体
8002 表示部
8003 スピーカー部
8100 警報装置
8101 マイクロコンピュータ
8200 室内機
8201 筐体
8202 送風口
8203 CPU
8204 室外機
8300 電気冷凍冷蔵庫
8301 筐体
8302 冷蔵室用扉
8303 冷凍室用扉
8304 CPU
9700 電気自動車
9701 二次電池
9702 制御回路
9703 駆動装置
9704 処理装置
Claims (4)
- 基板上の結晶性酸化物半導体膜であって、
前記酸化物半導体膜は、電子線のプローブ径が1nmである透過電子回折装置を用いて、一次元的に700nmの範囲で観察箇所を変化させたとき、不連続点を示す透過電子回折パターンが観測される箇所が5箇所以下である領域を有することを特徴とする酸化物半導体膜。 - 基板上の(00x)面(xは自然数)に配向性を有する結晶性酸化物半導体膜であって、
前記酸化物半導体膜は、電子線のプローブ径が1nmである透過電子回折装置を用いて、前記酸化物半導体膜の断面に対して垂直に前記電子線を入射し、一次元的に700nmの範囲で観察箇所を変化させたとき、入射方位<010>に対する(00x)面以外を含む透過電子回折パターンが観測される箇所が8箇所以下である領域を有することを特徴とする酸化物半導体膜。 - 請求項1または請求項2において、
前記酸化物半導体膜は、インジウム、ガリウムおよび亜鉛を有することを特徴とする酸化物半導体膜。 - 請求項1乃至請求項3のいずれか一に記載の酸化物半導体膜を有することを特徴とする半導体装置。
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WO2017168283A1 (ja) * | 2016-04-01 | 2017-10-05 | 株式会社半導体エネルギー研究所 | 複合酸化物半導体、当該複合酸化物半導体を用いた半導体装置、当該半導体装置を有する表示装置 |
JP2022064891A (ja) * | 2015-04-30 | 2022-04-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
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US20160155803A1 (en) * | 2014-11-28 | 2016-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device, Method for Manufacturing the Semiconductor Device, and Display Device Including the Semiconductor Device |
JP6647841B2 (ja) | 2014-12-01 | 2020-02-14 | 株式会社半導体エネルギー研究所 | 酸化物の作製方法 |
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JP6796086B2 (ja) | 2016-02-05 | 2020-12-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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KR20150016144A (ko) | 2015-02-11 |
JP6445271B2 (ja) | 2018-12-26 |
US20150034947A1 (en) | 2015-02-05 |
KR102305643B1 (ko) | 2021-09-29 |
TWI613726B (zh) | 2018-02-01 |
US9496330B2 (en) | 2016-11-15 |
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