JP2012151364A - 固体撮像装置 - Google Patents
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
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- H01L27/144—Devices controlled by radiation
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- H01L27/14825—Linear CCD imagers
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H04N25/57—Control of the dynamic range
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
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- H—ELECTRICITY
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
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Abstract
【解決手段】固体撮像装置1は、光感応領域15と、電位勾配形成領域17と、をそれぞれ有すると共に、所定の方向に交差する方向に沿うように併置された複数の光電変換部3と、光電変換部3にそれぞれ対応し且つ光感応領域15の平面形状を成す他方の短辺側に配置され、対応する光電変換部3の光感応領域15で発生した電荷を蓄積する複数のバッファゲート部5と、複数のバッファゲート部5からそれぞれ転送された電荷を取得し、所定の方向に交差する方向に転送して出力するシフトレジスタ9と、を備え、バッファゲート部5は、所定の方向に沿って配置されると共に所定の方向に向かってポテンシャルを高くするように所定の電位がそれぞれ与えられる少なくとも二つのゲート電極を有する。
【選択図】図1
Description
Claims (2)
- 光入射に応じて電荷を発生し且つ平面形状が二つの長辺と二つの短辺とによって形作られる略矩形状を成す光感応領域と、前記光感応領域に対して前記光感応領域の平面形状を成す長辺に平行な所定の方向に沿って高くされた電位勾配を形成する電位勾配形成領域と、をそれぞれ有すると共に、前記所定の方向に交差する方向に沿うように併置された複数の光電変換部と、
前記光電変換部にそれぞれ対応し且つ前記光感応領域の平面形状を成す他方の短辺側に配置され、対応する光電変換部の光感応領域で発生した電荷を蓄積する複数の電荷蓄積部と、
前記複数の電荷蓄積部からそれぞれ転送された電荷を取得し、前記所定の方向に交差する前記方向に転送して出力する電荷出力部と、を備え、
前記電荷蓄積部は、前記所定の方向に沿って配置されると共に前記所定の方向に向かってポテンシャルを高くするように所定の電位がそれぞれ与えられる少なくとも二つのゲート電極を有することを特徴とする固体撮像装置。 - 光入射に応じて電荷を発生し且つ平面形状が二つの長辺と二つの短辺とによって形作られる略矩形状を成す光感応領域と、前記光感応領域に対して前記光感応領域の平面形状を成す長辺に平行な所定の方向に沿って高くされた電位勾配を形成する電位勾配形成領域と、をそれぞれ有すると共に、前記所定の方向に交差する方向に沿うように併置された複数の光電変換部と、
前記光電変換部にそれぞれ対応し且つ前記光感応領域の平面形状を成す他方の短辺側に配置され、対応する光電変換部の光感応領域で発生した電荷を蓄積する複数の電荷蓄積部と、
前記複数の電荷蓄積部からそれぞれ転送された電荷を取得し、前記所定の方向に交差する前記方向に転送して出力する電荷出力部と、を備え、
前記電荷蓄積部は、前記所定の方向に沿って配置されると共に前記所定の方向に高くされる所定の電位がそれぞれ与えられる少なくとも二つのゲート電極を有することを特徴とする固体撮像装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011010114A JP5680979B2 (ja) | 2011-01-20 | 2011-01-20 | 固体撮像装置 |
PCT/JP2011/075098 WO2012098747A1 (ja) | 2011-01-20 | 2011-10-31 | 固体撮像装置 |
US13/977,987 US9419051B2 (en) | 2011-01-20 | 2011-10-31 | Solid-state imaging device |
EP11856354.3A EP2667410B1 (en) | 2011-01-20 | 2011-10-31 | Solid-state imaging device |
KR1020187008803A KR20180036793A (ko) | 2011-01-20 | 2011-10-31 | 고체 촬상 장치 |
KR1020137018477A KR102018923B1 (ko) | 2011-01-20 | 2011-10-31 | 고체 촬상 장치 |
CN201180065655.1A CN103329271B (zh) | 2011-01-20 | 2011-10-31 | 固体摄像装置 |
TW100140987A TWI553845B (zh) | 2011-01-20 | 2011-11-09 | Solid-state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011010114A JP5680979B2 (ja) | 2011-01-20 | 2011-01-20 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012151364A true JP2012151364A (ja) | 2012-08-09 |
JP5680979B2 JP5680979B2 (ja) | 2015-03-04 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011010114A Active JP5680979B2 (ja) | 2011-01-20 | 2011-01-20 | 固体撮像装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9419051B2 (ja) |
EP (1) | EP2667410B1 (ja) |
JP (1) | JP5680979B2 (ja) |
KR (2) | KR102018923B1 (ja) |
CN (1) | CN103329271B (ja) |
TW (1) | TWI553845B (ja) |
WO (1) | WO2012098747A1 (ja) |
Cited By (6)
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---|---|---|---|---|
JP2015090906A (ja) * | 2013-11-05 | 2015-05-11 | 浜松ホトニクス株式会社 | 電荷結合素子及びその製造方法、並びに固体撮像装置 |
JP2015090907A (ja) * | 2013-11-05 | 2015-05-11 | 浜松ホトニクス株式会社 | リニアイメージセンサ |
WO2016035494A1 (ja) * | 2014-09-01 | 2016-03-10 | 浜松ホトニクス株式会社 | 固体撮像装置 |
WO2016039046A1 (ja) * | 2014-09-09 | 2016-03-17 | 浜松ホトニクス株式会社 | 裏面入射型固体撮像装置 |
JP2019117949A (ja) * | 2019-04-08 | 2019-07-18 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JPWO2020039531A1 (ja) * | 2018-08-23 | 2021-08-26 | 国立大学法人東北大学 | 光センサ及びその信号読み出し方法並びに光エリアセンサ及びその信号読み出し方法 |
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JP5452511B2 (ja) * | 2011-01-14 | 2014-03-26 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5680979B2 (ja) | 2011-01-20 | 2015-03-04 | 浜松ホトニクス株式会社 | 固体撮像装置 |
CN109804308B (zh) * | 2017-08-25 | 2023-03-07 | 深圳市汇顶科技股份有限公司 | 一种可形成电位能梯度的感光元件 |
FR3071103B1 (fr) * | 2017-09-11 | 2019-10-04 | Continental Automotive France | Pixel photosensible et capteur d'image associe |
KR20210000600A (ko) | 2019-06-25 | 2021-01-05 | 에스케이하이닉스 주식회사 | 이미지 센서 |
KR20210002880A (ko) | 2019-07-01 | 2021-01-11 | 에스케이하이닉스 주식회사 | 픽셀 및 이를 포함하는 이미지 센서 |
KR102668562B1 (ko) | 2019-07-24 | 2024-05-24 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 그것의 동작 방법 |
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- 2011-01-20 JP JP2011010114A patent/JP5680979B2/ja active Active
- 2011-10-31 KR KR1020137018477A patent/KR102018923B1/ko active IP Right Grant
- 2011-10-31 KR KR1020187008803A patent/KR20180036793A/ko not_active Application Discontinuation
- 2011-10-31 CN CN201180065655.1A patent/CN103329271B/zh active Active
- 2011-10-31 WO PCT/JP2011/075098 patent/WO2012098747A1/ja active Application Filing
- 2011-10-31 US US13/977,987 patent/US9419051B2/en active Active
- 2011-10-31 EP EP11856354.3A patent/EP2667410B1/en active Active
- 2011-11-09 TW TW100140987A patent/TWI553845B/zh active
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WO2016035494A1 (ja) * | 2014-09-01 | 2016-03-10 | 浜松ホトニクス株式会社 | 固体撮像装置 |
KR20170049522A (ko) | 2014-09-01 | 2017-05-10 | 하마마츠 포토닉스 가부시키가이샤 | 고체 촬상 장치 |
JP2016051852A (ja) * | 2014-09-01 | 2016-04-11 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US10483302B2 (en) | 2014-09-01 | 2019-11-19 | Hamamatsu Photonics K.K. | Solid-state imaging device |
JP2016058507A (ja) * | 2014-09-09 | 2016-04-21 | 浜松ホトニクス株式会社 | 裏面入射型固体撮像装置 |
WO2016039046A1 (ja) * | 2014-09-09 | 2016-03-17 | 浜松ホトニクス株式会社 | 裏面入射型固体撮像装置 |
US10811459B2 (en) | 2014-09-09 | 2020-10-20 | Hamamatsu Photonics K.K. | Backside incidence type solid-state image pickup device |
JPWO2020039531A1 (ja) * | 2018-08-23 | 2021-08-26 | 国立大学法人東北大学 | 光センサ及びその信号読み出し方法並びに光エリアセンサ及びその信号読み出し方法 |
JP7333562B2 (ja) | 2018-08-23 | 2023-08-25 | 国立大学法人東北大学 | 光センサ及びその信号読み出し方法並びに光エリアセンサ及びその信号読み出し方法 |
JP2019117949A (ja) * | 2019-04-08 | 2019-07-18 | 浜松ホトニクス株式会社 | 固体撮像装置 |
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CN103329271B (zh) | 2016-09-21 |
WO2012098747A1 (ja) | 2012-07-26 |
KR20180036793A (ko) | 2018-04-09 |
TWI553845B (zh) | 2016-10-11 |
TW201232771A (en) | 2012-08-01 |
KR102018923B1 (ko) | 2019-09-05 |
EP2667410B1 (en) | 2021-09-01 |
EP2667410A4 (en) | 2017-09-06 |
US20130270609A1 (en) | 2013-10-17 |
JP5680979B2 (ja) | 2015-03-04 |
CN103329271A (zh) | 2013-09-25 |
EP2667410A1 (en) | 2013-11-27 |
US9419051B2 (en) | 2016-08-16 |
KR20140015292A (ko) | 2014-02-06 |
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