JP2016051852A - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP2016051852A JP2016051852A JP2014177195A JP2014177195A JP2016051852A JP 2016051852 A JP2016051852 A JP 2016051852A JP 2014177195 A JP2014177195 A JP 2014177195A JP 2014177195 A JP2014177195 A JP 2014177195A JP 2016051852 A JP2016051852 A JP 2016051852A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 52
- 238000003860 storage Methods 0.000 claims abstract description 136
- 239000012535 impurity Substances 0.000 claims abstract description 102
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 230000005684 electric field Effects 0.000 claims abstract description 9
- 230000004044 response Effects 0.000 claims abstract description 4
- 238000007599 discharging Methods 0.000 claims description 20
- 238000009825 accumulation Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 295
- 230000001133 acceleration Effects 0.000 abstract 1
- 230000004048 modification Effects 0.000 description 26
- 238000012986 modification Methods 0.000 description 26
- 238000010586 diagram Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 101000581803 Homo sapiens Lithostathine-1-beta Proteins 0.000 description 2
- 102100027338 Lithostathine-1-beta Human genes 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
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- H01L27/144—Devices controlled by radiation
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- H01L27/14643—Photodiode arrays; MOS imagers
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- H01L27/14665—Imagers using a photoconductor layer
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
ストレージ部3の電極55は、n型半導体層22、n+型半導体層51、n++型半導体層52、及びn+++型半導体層53を跨るように配置されている。したがって、ストレージ部3でのポテンシャルは、図11及び図12に示された変形例と同様に、第二方向D2に沿って、段階的に深くなる。
Claims (6)
- 第一方向に並んだ複数の光電変換部と、
対応する前記光電変換部と前記第一方向に直交する第二方向で並び、かつ、対応する前記光電変換部で発生した電荷を蓄積する複数の電荷蓄積部と、
前記複数の電荷蓄積部からそれぞれ転送された電荷を取得し、前記第一方向に転送して出力する電荷出力部と、を備え、
各前記光電変換部は、
光入射に応じて電荷を発生する光感応領域と、
前記光感応領域に対して前記第二方向に沿って高くされた電位勾配を形成し、前記光感応領域での電荷の移動を前記第二方向に促進する電位勾配形成部と、を有し、
各前記電荷蓄積部は、
不純物濃度が前記第二方向に向かって段階的に一の方向に変化している複数の領域と、
不純物濃度が段階的に異なる前記複数の領域を跨るように配置され、かつ、前記複数の領域に電界を印加する電極と、を有している、固体撮像装置。 - 各前記電荷蓄積部は、前記複数の領域として、前記第二方向に並ぶ第一領域と第二領域とを有し、
前記第一領域と前記第二領域とでは、前記第一領域と前記第二領域とに不純物を注入し、かつ、不純物が注入された前記第二領域に不純物を更に注入することにより、不純物濃度が段階的に一の方向に変化している、請求項1に記載の固体撮像装置。 - 前記第二領域は、前記第二方向で前記光感応領域と隣り合い、
前記光感応領域は、前記第二領域と共に不純物を注入することにより、前記第二領域と不純物濃度が同等である、請求項2に記載の固体撮像装置。 - 各前記電荷蓄積部に前記第一方向で並び、かつ、前記電荷蓄積部に蓄積される電荷を排出する複数の電荷排出部を更に備えている、請求項1〜3のいずれか一項に記載の固体撮像装置。
- 各前記電荷蓄積部は、前記第二方向に向かうにしたがって、前記第一方向での幅が大きくなっている、請求項4に記載の固体撮像装置。
- 各前記電荷排出部は、
電荷を排出するドレイン領域と、
前記電荷蓄積部と前記ドレイン領域との間に位置し、かつ、前記電荷蓄積部から前記ドレイン領域へ電荷の流入を制御するゲート領域と、を有し、
前記ドレイン領域は、前記第一方向で隣り合う前記電荷排出部間で共用されている、請求項4又は5に記載の固体撮像装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014177195A JP6739891B2 (ja) | 2014-09-01 | 2014-09-01 | 固体撮像装置 |
EP15838751.4A EP3190622B1 (en) | 2014-09-01 | 2015-08-03 | Solid-state imaging device |
KR1020177006540A KR102386626B1 (ko) | 2014-09-01 | 2015-08-03 | 고체 촬상 장치 |
CN201580046692.6A CN106663690B (zh) | 2014-09-01 | 2015-08-03 | 固体摄像装置 |
PCT/JP2015/071978 WO2016035494A1 (ja) | 2014-09-01 | 2015-08-03 | 固体撮像装置 |
US15/502,003 US10483302B2 (en) | 2014-09-01 | 2015-08-03 | Solid-state imaging device |
TW104127983A TWI692858B (zh) | 2014-09-01 | 2015-08-26 | 固體攝像裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014177195A JP6739891B2 (ja) | 2014-09-01 | 2014-09-01 | 固体撮像装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2019073570A Division JP6818075B2 (ja) | 2019-04-08 | 2019-04-08 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
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JP2016051852A true JP2016051852A (ja) | 2016-04-11 |
JP6739891B2 JP6739891B2 (ja) | 2020-08-12 |
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JP2014177195A Active JP6739891B2 (ja) | 2014-09-01 | 2014-09-01 | 固体撮像装置 |
Country Status (7)
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US (1) | US10483302B2 (ja) |
EP (1) | EP3190622B1 (ja) |
JP (1) | JP6739891B2 (ja) |
KR (1) | KR102386626B1 (ja) |
CN (1) | CN106663690B (ja) |
TW (1) | TWI692858B (ja) |
WO (1) | WO2016035494A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109804308B (zh) * | 2017-08-25 | 2023-03-07 | 深圳市汇顶科技股份有限公司 | 一种可形成电位能梯度的感光元件 |
JP6925206B2 (ja) * | 2017-09-04 | 2021-08-25 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP2020141029A (ja) * | 2019-02-27 | 2020-09-03 | 株式会社東芝 | 固体撮像装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06236987A (ja) * | 1993-02-12 | 1994-08-23 | Matsushita Electron Corp | 固体撮像装置 |
JP2002373979A (ja) * | 2001-06-15 | 2002-12-26 | Toshiba Microelectronics Corp | 固体ラインセンサー |
JP2004303982A (ja) * | 2003-03-31 | 2004-10-28 | Matsushita Electric Ind Co Ltd | 固体撮像素子 |
JP2011187921A (ja) * | 2010-02-09 | 2011-09-22 | Renesas Electronics Corp | 固体撮像装置及びその駆動方法 |
JP2012151364A (ja) * | 2011-01-20 | 2012-08-09 | Hamamatsu Photonics Kk | 固体撮像装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61194870A (ja) * | 1985-02-25 | 1986-08-29 | Nec Corp | 固体撮像装置 |
JPS61194780A (ja) | 1985-02-25 | 1986-08-29 | Hitachi Ltd | 半導体装置の製造方法 |
JPH06104417A (ja) | 1992-09-18 | 1994-04-15 | Matsushita Electron Corp | 固体撮像装置 |
JP2007258424A (ja) * | 2006-03-23 | 2007-10-04 | Seiko Epson Corp | 固体撮像素子の製造方法及び固体撮像素子 |
US8334918B2 (en) * | 2006-11-28 | 2012-12-18 | Hamamatsu Photonics K.K. | Solid-state imaging element |
JP5350659B2 (ja) * | 2008-03-25 | 2013-11-27 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5134427B2 (ja) | 2008-04-30 | 2013-01-30 | 浜松ホトニクス株式会社 | 固体撮像装置 |
EP2216981A1 (en) * | 2009-02-09 | 2010-08-11 | Thomson Licensing | Method, apparatus and system for providing a color device characterization with a quality evaluation |
WO2010092644A1 (ja) * | 2009-02-13 | 2010-08-19 | パナソニック株式会社 | 固体撮像装置及びカメラ |
JP2013175610A (ja) * | 2012-02-27 | 2013-09-05 | Toshiba Corp | 固体撮像素子 |
JP6211898B2 (ja) | 2013-11-05 | 2017-10-11 | 浜松ホトニクス株式会社 | リニアイメージセンサ |
-
2014
- 2014-09-01 JP JP2014177195A patent/JP6739891B2/ja active Active
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2015
- 2015-08-03 CN CN201580046692.6A patent/CN106663690B/zh active Active
- 2015-08-03 EP EP15838751.4A patent/EP3190622B1/en active Active
- 2015-08-03 WO PCT/JP2015/071978 patent/WO2016035494A1/ja active Application Filing
- 2015-08-03 KR KR1020177006540A patent/KR102386626B1/ko active IP Right Grant
- 2015-08-03 US US15/502,003 patent/US10483302B2/en active Active
- 2015-08-26 TW TW104127983A patent/TWI692858B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06236987A (ja) * | 1993-02-12 | 1994-08-23 | Matsushita Electron Corp | 固体撮像装置 |
JP2002373979A (ja) * | 2001-06-15 | 2002-12-26 | Toshiba Microelectronics Corp | 固体ラインセンサー |
JP2004303982A (ja) * | 2003-03-31 | 2004-10-28 | Matsushita Electric Ind Co Ltd | 固体撮像素子 |
JP2011187921A (ja) * | 2010-02-09 | 2011-09-22 | Renesas Electronics Corp | 固体撮像装置及びその駆動方法 |
JP2012151364A (ja) * | 2011-01-20 | 2012-08-09 | Hamamatsu Photonics Kk | 固体撮像装置 |
Also Published As
Publication number | Publication date |
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EP3190622B1 (en) | 2021-09-22 |
TW201622119A (zh) | 2016-06-16 |
US10483302B2 (en) | 2019-11-19 |
KR102386626B1 (ko) | 2022-04-15 |
EP3190622A4 (en) | 2018-04-25 |
WO2016035494A1 (ja) | 2016-03-10 |
CN106663690B (zh) | 2019-11-29 |
US20170229501A1 (en) | 2017-08-10 |
KR20170049522A (ko) | 2017-05-10 |
JP6739891B2 (ja) | 2020-08-12 |
EP3190622A1 (en) | 2017-07-12 |
TWI692858B (zh) | 2020-05-01 |
CN106663690A (zh) | 2017-05-10 |
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