JP6211898B2 - リニアイメージセンサ - Google Patents
リニアイメージセンサ Download PDFInfo
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- JP6211898B2 JP6211898B2 JP2013229745A JP2013229745A JP6211898B2 JP 6211898 B2 JP6211898 B2 JP 6211898B2 JP 2013229745 A JP2013229745 A JP 2013229745A JP 2013229745 A JP2013229745 A JP 2013229745A JP 6211898 B2 JP6211898 B2 JP 6211898B2
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- 238000006243 chemical reaction Methods 0.000 claims description 71
- 238000003860 storage Methods 0.000 claims description 42
- 239000012535 impurity Substances 0.000 claims description 37
- 238000005036 potential barrier Methods 0.000 claims description 15
- 238000009825 accumulation Methods 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 description 31
- 108091006146 Channels Proteins 0.000 description 28
- 239000000758 substrate Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000005284 excitation Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000004611 spectroscopical analysis Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004993 emission spectroscopy Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010183 spectrum analysis Methods 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/14843—Interline transfer
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/701—Line sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
・半導体基板本体10A:1013以上1019以下(cm−3)/50000以上800000以下(nm)
・光電変換領域S1:1012以上1017以下(cm−3)/100以上5000以下(nm)
・バッファ領域B:1011以上1017以下(cm−3)/100以上000以下(nm)
・電荷蓄積領域S2:1012以上1017以下(cm−3)/100以上5000以下(nm)
・領域S11:1012以上1018以下(cm−3)/100以上5000以下(nm)
・領域S12:1013以上1019以下(cm−3)/100以上5000以下(nm)
・領域S11*:1012以上1018以下(cm−3)/100以上5000以下(nm)
・領域S12*:1013以上1019以下(cm−3)/100以上5000以下(nm)
・領域S12**:1013以上1019以下(cm−3)/100以上5000以下(nm)
・テーパー領域S12*:1012以上1018以下(cm−3)/100以上5000以下(nm)
・チャネル領域B2:1011以上1017以下(cm−3)/100以上5000以下(nm)
・ドレイン領域ARD:1017以上1020以下(cm−3)/100以上5000以下(nm)
・ポテンシャル障壁領域BR:1011以上1017以下(cm−3)/100以上5000以下(nm)
Claims (2)
- 行方向に並んだ複数の光検出部を有し、それぞれの前記光検出部が、列方向に沿って整列する複数の画素領域を有するように分割され、複数の画素領域からの信号を、それぞれの前記光検出部毎に積算し、一次元的な光像に対応する電気信号を時系列に出力するリニアイメージセンサであって、
個々の前記画素領域は、
入射したエネルギー線を光電変換する光電変換領域と、
前記光電変換領域内において、後段の画素領域に向かう前記列方向に沿った電荷の転送を促進するポテンシャル傾斜を形成する傾斜ポテンシャル形成手段と、
前記光電変換領域で発生し、前記傾斜ポテンシャル形成手段で前記列方向に転送された電荷をそれぞれ蓄積し、蓄積された電荷は、その上に設けられた転送電極への印加電位によるポテンシャル制御によって、後段の画素領域の光電変換領域に流れ込む電荷蓄積領域と、
前記電荷蓄積領域にチャネル領域を介して行方向に隣接したドレイン領域と、
前記チャネル領域を流れる電荷量を制御するよう、前記チャネル領域上に配置されたリセットゲート電極と、
を備えることを特徴とするリニアイメージセンサ。 - ある画素領域における前記電荷蓄積領域と、この画素領域の後段に隣接する画素領域における前記光電変換領域との間に、前記光電変換領域よりも不純物濃度が低いポテンシャル障壁領域が形成されている、
ことを特徴とする請求項1に記載のリニアイメージセンサ。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013229745A JP6211898B2 (ja) | 2013-11-05 | 2013-11-05 | リニアイメージセンサ |
EP14860704.7A EP3067934B1 (en) | 2013-11-05 | 2014-10-31 | Linear image sensor |
KR1020167013940A KR102236597B1 (ko) | 2013-11-05 | 2014-10-31 | 리니어 이미지 센서 |
CN201480059141.9A CN105684150B (zh) | 2013-11-05 | 2014-10-31 | 线性图像传感器 |
US15/032,130 US10403677B2 (en) | 2013-11-05 | 2014-10-31 | Linear image sensor |
PCT/JP2014/079140 WO2015068667A1 (ja) | 2013-11-05 | 2014-10-31 | リニアイメージセンサ |
TW103138409A TWI642173B (zh) | 2013-11-05 | 2014-11-05 | Linear image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013229745A JP6211898B2 (ja) | 2013-11-05 | 2013-11-05 | リニアイメージセンサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015090907A JP2015090907A (ja) | 2015-05-11 |
JP6211898B2 true JP6211898B2 (ja) | 2017-10-11 |
Family
ID=53041444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013229745A Active JP6211898B2 (ja) | 2013-11-05 | 2013-11-05 | リニアイメージセンサ |
Country Status (7)
Country | Link |
---|---|
US (1) | US10403677B2 (ja) |
EP (1) | EP3067934B1 (ja) |
JP (1) | JP6211898B2 (ja) |
KR (1) | KR102236597B1 (ja) |
CN (1) | CN105684150B (ja) |
TW (1) | TWI642173B (ja) |
WO (1) | WO2015068667A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6739891B2 (ja) | 2014-09-01 | 2020-08-12 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP6932580B2 (ja) * | 2017-08-04 | 2021-09-08 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
JP7504559B2 (ja) * | 2017-09-04 | 2024-06-24 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP6925206B2 (ja) * | 2017-09-04 | 2021-08-25 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP7522019B2 (ja) | 2020-12-07 | 2024-07-24 | 浜松ホトニクス株式会社 | 光電変換装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0682693B2 (ja) * | 1984-08-17 | 1994-10-19 | 松下電子工業株式会社 | 電荷転送装置 |
JP3297947B2 (ja) | 1993-03-24 | 2002-07-02 | ソニー株式会社 | 固体撮像素子 |
JP2699895B2 (ja) * | 1994-11-24 | 1998-01-19 | 日本電気株式会社 | イメージセンサの駆動方法 |
JPH1132166A (ja) * | 1997-07-09 | 1999-02-02 | Canon Inc | イメージセンサと画像読み取り装置 |
US6465820B1 (en) * | 1998-09-16 | 2002-10-15 | Dalsa, Inc. | CMOS compatible single phase CCD charge transfer device |
JP2002217399A (ja) * | 2001-01-22 | 2002-08-02 | Fuji Photo Film Co Ltd | 電荷読出方法および固体撮像装置 |
JP4236864B2 (ja) * | 2002-05-08 | 2009-03-11 | Necエレクトロニクス株式会社 | カラーイメージセンサ |
JP2004303982A (ja) * | 2003-03-31 | 2004-10-28 | Matsushita Electric Ind Co Ltd | 固体撮像素子 |
JP4231327B2 (ja) * | 2003-04-23 | 2009-02-25 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5350803B2 (ja) * | 2006-11-28 | 2013-11-27 | 浜松ホトニクス株式会社 | 固体撮像素子 |
JP5350659B2 (ja) | 2008-03-25 | 2013-11-27 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5134427B2 (ja) * | 2008-04-30 | 2013-01-30 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5484692B2 (ja) * | 2008-06-13 | 2014-05-07 | シャープ株式会社 | 固体撮像素子および電子情報機器 |
JP5485919B2 (ja) | 2011-01-14 | 2014-05-07 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5680979B2 (ja) * | 2011-01-20 | 2015-03-04 | 浜松ホトニクス株式会社 | 固体撮像装置 |
-
2013
- 2013-11-05 JP JP2013229745A patent/JP6211898B2/ja active Active
-
2014
- 2014-10-31 WO PCT/JP2014/079140 patent/WO2015068667A1/ja active Application Filing
- 2014-10-31 EP EP14860704.7A patent/EP3067934B1/en active Active
- 2014-10-31 US US15/032,130 patent/US10403677B2/en active Active
- 2014-10-31 CN CN201480059141.9A patent/CN105684150B/zh active Active
- 2014-10-31 KR KR1020167013940A patent/KR102236597B1/ko active IP Right Grant
- 2014-11-05 TW TW103138409A patent/TWI642173B/zh active
Also Published As
Publication number | Publication date |
---|---|
US20160268334A1 (en) | 2016-09-15 |
EP3067934B1 (en) | 2021-03-24 |
EP3067934A1 (en) | 2016-09-14 |
US10403677B2 (en) | 2019-09-03 |
JP2015090907A (ja) | 2015-05-11 |
TWI642173B (zh) | 2018-11-21 |
TW201523858A (zh) | 2015-06-16 |
EP3067934A4 (en) | 2017-07-05 |
WO2015068667A1 (ja) | 2015-05-14 |
KR20160082683A (ko) | 2016-07-08 |
CN105684150A (zh) | 2016-06-15 |
CN105684150B (zh) | 2019-02-19 |
KR102236597B1 (ko) | 2021-04-06 |
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