JP5485919B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP5485919B2 JP5485919B2 JP2011005891A JP2011005891A JP5485919B2 JP 5485919 B2 JP5485919 B2 JP 5485919B2 JP 2011005891 A JP2011005891 A JP 2011005891A JP 2011005891 A JP2011005891 A JP 2011005891A JP 5485919 B2 JP5485919 B2 JP 5485919B2
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- 238000003384 imaging method Methods 0.000 title claims description 43
- 238000007599 discharging Methods 0.000 claims description 105
- 238000003860 storage Methods 0.000 claims description 73
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 201
- 238000009825 accumulation Methods 0.000 description 54
- 238000010586 diagram Methods 0.000 description 9
- 238000002955 isolation Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
Claims (5)
- 光入射に応じて電荷を発生し且つ平面形状が二つの長辺と二つの短辺とによって形作られる略矩形状をなし、前記長辺に交差する第1方向に並置された複数の光感応領域を有する光電変換部と、
前記複数の光感応領域に対向して配置され、一方の前記短辺から他方の前記短辺に向かう第2方向に沿った電位勾配を形成する電位勾配形成部と、
前記一方の短辺側に配置され且つ前記複数の光感応領域からそれぞれ転送された電荷を前記第1方向に転送して出力する第1電荷出力部と、
前記他方の短辺側に配置され且つ前記複数の光感応領域からそれぞれ転送された電荷を前記第1方向に転送して出力する第2電荷出力部と、
前記一方の短辺側に配置され且つ前記複数の光感応領域からそれぞれ転送された電荷を排出する第1電荷排出部と、
前記他方の短辺側に配置され且つ前記複数の光感応領域からそれぞれ転送された電荷を排出する第2電荷排出部と、を備え、
前記電位勾配形成部は、前記第2方向に沿って低くされた電位勾配を形成する第1電位勾配形成領域と、前記第2方向に沿って高くされた電位勾配を形成する第2電位勾配形成領域とを有し、前記第2電位勾配形成領域は、前記第1電位勾配形成領域に対し前記第2方向に並置されており、
前記第1電荷排出部及び前記第2電荷排出部は、前記第1方向で隣り合う二つの前記光感応領域毎に対応して配置されており、
前記第1電荷排出部と前記第2電荷排出部とは、前記第1方向に沿って交互に配置されていることを特徴とする固体撮像装置。 - 前記第1電荷出力部から出力された電荷に前記第2電荷出力部から出力された電荷を加える加算部を更に備えていることを特徴とする請求項1に記載の固体撮像装置。
- 前記一方の短辺側に配置され且つ前記複数の光感応領域からそれぞれ転送された電荷を蓄積する第1電荷蓄積部と、
前記他方の短辺側に配置され且つ前記複数の光感応領域からそれぞれ転送された電荷を蓄積する第2電荷蓄積部と、を更に備え、
前記第1電荷出力部は、前記第1電荷蓄積部から転送された電荷を前記第1方向に転送して出力し、前記第1電荷排出部は、前記第1電荷蓄積部から転送された電荷を排出し、
前記第2電荷出力部は、前記第2電荷蓄積部から転送された電荷を前記第1方向に転送して出力し、前記第2電荷排出部は、前記第2電荷蓄積部から転送された電荷を排出することを特徴とする請求項1又は2に記載の固体撮像装置。 - 前記電位勾配形成部は、前記複数の光感応領域に対向して配置された導電性部材と、前記導電性部材の前記第2方向での両端部に接続された一対の電極と、前記両端部の間で前記導電性部材に接続された電極とを有することを特徴とする請求項1〜3のいずれか一項に記載の固体撮像装置。
- 裏面入射型であることを特徴とする請求項1〜4のいずれか一項に記載の固体撮像装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011005891A JP5485919B2 (ja) | 2011-01-14 | 2011-01-14 | 固体撮像装置 |
CN201180065063.XA CN103314440B (zh) | 2011-01-14 | 2011-11-11 | 固体摄像装置 |
US13/977,976 US9299860B2 (en) | 2011-01-14 | 2011-11-11 | Solid state imaging device including photoelectric conversion portion |
PCT/JP2011/076112 WO2012096052A1 (ja) | 2011-01-14 | 2011-11-11 | 固体撮像装置 |
EP11855867.5A EP2665098B1 (en) | 2011-01-14 | 2011-11-11 | Solid state imaging device |
KR1020137012885A KR101880780B1 (ko) | 2011-01-14 | 2011-11-11 | 고체 촬상 장치 |
TW100144678A TWI539585B (zh) | 2011-01-14 | 2011-12-05 | Solid state camera device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011005891A JP5485919B2 (ja) | 2011-01-14 | 2011-01-14 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012146917A JP2012146917A (ja) | 2012-08-02 |
JP5485919B2 true JP5485919B2 (ja) | 2014-05-07 |
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JP2011005891A Active JP5485919B2 (ja) | 2011-01-14 | 2011-01-14 | 固体撮像装置 |
Country Status (7)
Country | Link |
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US (1) | US9299860B2 (ja) |
EP (1) | EP2665098B1 (ja) |
JP (1) | JP5485919B2 (ja) |
KR (1) | KR101880780B1 (ja) |
CN (1) | CN103314440B (ja) |
TW (1) | TWI539585B (ja) |
WO (1) | WO2012096052A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5452511B2 (ja) * | 2011-01-14 | 2014-03-26 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5680979B2 (ja) * | 2011-01-20 | 2015-03-04 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP6348272B2 (ja) | 2013-11-05 | 2018-06-27 | 浜松ホトニクス株式会社 | 電荷結合素子及びその製造方法、並びに固体撮像装置 |
JP6211898B2 (ja) * | 2013-11-05 | 2017-10-11 | 浜松ホトニクス株式会社 | リニアイメージセンサ |
JP6306989B2 (ja) * | 2014-09-09 | 2018-04-04 | 浜松ホトニクス株式会社 | 裏面入射型固体撮像装置 |
US11424115B2 (en) | 2017-03-31 | 2022-08-23 | Verity Instruments, Inc. | Multimode configurable spectrometer |
JP7479584B1 (ja) | 2022-12-06 | 2024-05-08 | 浜松ホトニクス株式会社 | 半導体プロセス監視装置及び半導体プロセス監視方法 |
WO2024122134A1 (ja) * | 2022-12-06 | 2024-06-13 | 浜松ホトニクス株式会社 | 半導体プロセス監視装置及び半導体プロセス監視方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3061410B2 (ja) * | 1990-11-15 | 2000-07-10 | ソニー株式会社 | 固体撮像装置 |
JPH05283670A (ja) * | 1992-04-03 | 1993-10-29 | Sony Corp | 固体撮像素子及び固体撮像素子の電荷読出し方法 |
JP3297947B2 (ja) | 1993-03-24 | 2002-07-02 | ソニー株式会社 | 固体撮像素子 |
JP3318814B2 (ja) * | 1995-03-15 | 2002-08-26 | ソニー株式会社 | 固体撮像装置及びその駆動方法 |
JP2000058810A (ja) * | 1998-08-12 | 2000-02-25 | Sony Corp | 固体撮像装置 |
US6770860B1 (en) * | 2000-02-14 | 2004-08-03 | Dalsa, Inc. | Dual line integrating line scan sensor |
JP2002217399A (ja) * | 2001-01-22 | 2002-08-02 | Fuji Photo Film Co Ltd | 電荷読出方法および固体撮像装置 |
JP4230128B2 (ja) * | 2001-06-20 | 2009-02-25 | 富士フイルム株式会社 | 撮像装置およびその制御方法 |
JP5350803B2 (ja) | 2006-11-28 | 2013-11-27 | 浜松ホトニクス株式会社 | 固体撮像素子 |
JP5134427B2 (ja) * | 2008-04-30 | 2013-01-30 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5439975B2 (ja) * | 2009-06-23 | 2014-03-12 | 富士ゼロックス株式会社 | イメージセンサおよび画像読取装置 |
JP5702625B2 (ja) * | 2011-02-22 | 2015-04-15 | ソニー株式会社 | 撮像素子、撮像素子の製造方法、画素設計方法および電子機器 |
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2011
- 2011-01-14 JP JP2011005891A patent/JP5485919B2/ja active Active
- 2011-11-11 US US13/977,976 patent/US9299860B2/en active Active
- 2011-11-11 EP EP11855867.5A patent/EP2665098B1/en active Active
- 2011-11-11 KR KR1020137012885A patent/KR101880780B1/ko active IP Right Grant
- 2011-11-11 WO PCT/JP2011/076112 patent/WO2012096052A1/ja active Application Filing
- 2011-11-11 CN CN201180065063.XA patent/CN103314440B/zh active Active
- 2011-12-05 TW TW100144678A patent/TWI539585B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2012146917A (ja) | 2012-08-02 |
EP2665098A4 (en) | 2017-06-28 |
CN103314440A (zh) | 2013-09-18 |
US9299860B2 (en) | 2016-03-29 |
CN103314440B (zh) | 2016-07-20 |
KR20140001907A (ko) | 2014-01-07 |
EP2665098B1 (en) | 2021-04-28 |
KR101880780B1 (ko) | 2018-07-20 |
TWI539585B (zh) | 2016-06-21 |
TW201230317A (en) | 2012-07-16 |
EP2665098A1 (en) | 2013-11-20 |
US20130285188A1 (en) | 2013-10-31 |
WO2012096052A1 (ja) | 2012-07-19 |
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