JP6078886B2 - バイアス深溝分離部を有する高度光子検出装置 - Google Patents
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- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
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Description
Claims (25)
- 光子検出装置であって、
半導体材料の第1の領域内に配置された平面接合部を有するフォトダイオードであって、
前記半導体材料は、Pドープシリコンを含み、前記平面接合部は、前記半導体材料内のPドープシリコン領域に近接して配置された単一のNドープシリコン領域を含み、前記単一のNドープシリコン領域のドーピング密度は、該単一のNドープシリコン領域の端部に向けて徐々に減少し、前記単一のNドープシリコン領域の前記端部は、分離のためにガードリング若しくはドープウェルを利用しないフォトダイオードと、
前記半導体材料内に配置された深溝分離(DTI)構造と、
を備え、前記DTI構造は、該DTI構造の一方の側にある前記半導体材料の前記第1の領域を、前記DTI構造の他方の側にある前記半導体材料の第2の領域から分離し、前記DTI構造は、
前記DTI構造の内面を覆う誘電体層と、
前記DTI構造内部の前記誘電体層を覆って配置されたドープ半導体材料と、
を含み、前記DTI構造の内部に配置された前記ドープ半導体材料は、バイアス電圧に結合されて、前記半導体材料の前記第1の領域にある前記フォトダイオードを、前記半導体材料の前記第2の領域から分離する、
ことを特徴とする光子検出装置。 - 前記平面接合部は、前記半導体材料内の前記Pドープシリコンから前記平面接合部内に電子がドリフトするよう逆バイアスをかけられるように結合される、
ことを特徴とする請求項1に記載の光子検出装置。 - 前記半導体材料の前記第1の領域内に配置された前記平面接合部を有する前記フォトダイオードは、単一光子アバランシェダイオード(SPAD)を含み、前記DTI構造内に配置された前記ドープ半導体材料は、前記SPADの光収集領域内の暗電流を低減するようにバイアスをかけられる、
ことを特徴とする請求項1に記載の光子検出装置。 - 前記半導体材料の前記第2の領域内に配置されるとともに前記SPADに結合されて該SPAD内のアバランシェ電流を制限する消滅回路をさらに備え、前記DTI構造内に配置された前記ドープ半導体材料は、前記SPADの高電界領域を前記消滅回路から分離するようにバイアスをかけられる、
ことを特徴とする請求項3に記載の光子検出装置。 - 前記半導体材料の前記第1の領域は、該半導体材料の該第1の領域が第1の電圧でバイアスをかけられるように前記第1の電圧に結合され、前記半導体材料の前記第2の領域は、該半導体材料の該第2の領域が第2の電圧でバイアスをかけられるように前記第2の電圧に結合される、
ことを特徴とする請求項4に記載の光子検出装置。 - 前記フォトダイオードの前記平面接合部は、第3の電圧に結合され、前記第1の領域に結合された前記第1の電圧、及び前記フォトダイオードの前記平面接合部に結合された前記第3の電圧に、前記フォトダイオードの前記平面接合部内の逆バイアスが応答する、
ことを特徴とする請求項5に記載の光子検出装置。 - 前記半導体材料の前記第2の領域内に配置された第2のSPADを含む第2のフォトダイオードをさらに備え、前記DTI構造内に配置された前記ドープ半導体材料は、前記SPADの高電界領域を前記第2のSPADの高電界領域から分離するようにバイアスをかけられる、
ことを特徴とする請求項3に記載の光子検出装置。 - 前記半導体材料の前記第1及び第2の領域は、該半導体材料の該第1及び第2の領域が第1の電圧でバイアスをかけられるように前記第1の電圧に結合される、
ことを特徴とする請求項7に記載の光子検出装置。 - 前記半導体材料は、前記半導体材料の前記第1及び第2の領域に結合された共通バイアスノードを含み、該共通バイアスノードは、前記半導体材料の前記第1及び第2の領域が前記第1の電圧でバイアスをかけられるように前記第1の電圧に結合される、
ことを特徴とする請求項8に記載の光子検出装置。 - 前記SPADは、前記半導体材料の背面から照射されるようになっている、
ことを特徴とする請求項3に記載の光子検出装置。 - 前記DTI構造の前記内面を覆う前記誘電体層は、二酸化シリコンを含む、
ことを特徴とする請求項1に記載の光子検出装置。 - 前記DTI構造の内部の誘電体層を覆って配置された前記ドープ半導体材料は、低ドープポリシリコンを含む、
ことを特徴とする請求項1に記載の光子検出装置。 - 複数の画素セルを有する画素アレイを備えた光子検知システムであって、前記複数の画素セルの各々は、
半導体材料の第1の領域内に配置された平面接合部を有するフォトダイオードであって、前記半導体材料は、Pドープシリコンを含み、前記平面接合部は、前記半導体材料内のPドープシリコン領域に近接して配置された単一のNドープシリコン領域を含み、前記単一のNドープシリコン領域のドーピング密度は、該単一のNドープシリコン領域の端部に向けて徐々に減少し、前記単一のNドープシリコン領域の前記端部は、分離のためにガードリング若しくはドープウェルを利用しないフォトダイオードと、
前記半導体材料内に配置された深溝分離(DTI)構造と、
を含み、前記DTI構造は、該DTI構造の一方の側にある前記半導体材料の前記第1の領域を、前記DTI構造の他方の側にある前記半導体材料の第2の領域から分離し、前記DTI構造は、前記DTI構造の内面を覆う誘電体層と、前記DTI構造内部の前記誘電体層を覆って配置されたドープ半導体材料とを含み、前記DTI構造の内部に配置された前記ドープ半導体材料は、バイアス電圧に結合されて前記半導体材料の前記第1の領域にある前記フォトダイオードを前記半導体材料の前記第2の領域から分離し、
前記複数の画素セルの各々は、
前記画素アレイに結合されて該画素アレイの動作を制御する制御回路と、
前記画素アレイに結合されて前記複数の画素セルから光子データを読み出す読み出し回路と、
をさらに含む、
ことを特徴とする光子検知システム。 - 前記読み出し回路に結合されて、前記複数の画素セルから読み出された前記光子データを記憶する機能論理回路をさらに備える、
ことを特徴とする請求項13に記載の光子検知システム。 - 前記読み出し回路は、
前記複数の画素セルの各々から受け取った前記光子データ内の光子事象を集計すべく前記光子データを受け取るように結合されたカウンタ回路と、
前記カウンタ回路に結合されて、前記光子データ内の前記光子事象に関連する光子タイミング情報を記録する時間−デジタル変換器回路と、
を含むことを特徴とする請求項13に記載の光子検知システム。 - 前記半導体材料の前記第1の領域内に配置された前記平面接合部を有する前記フォトダイオードは、単一光子アバランシェダイオード(SPAD)を含み、前記DTI構造内に配置された前記ドープ半導体材料は、前記SPADの光収集領域内の暗電流を低減するようにバイアスをかけられる、
ことを特徴とする請求項13に記載の光子検知システム。 - 前記半導体材料の前記第2の領域内に配置されるとともに前記SPADに結合されて該SPAD内のアバランシェ電流を制限する消滅回路をさらに備え、前記DTI構造内に配置された前記ドープ半導体材料は、前記SPADの高電界領域を前記消滅回路から分離するようにバイアスをかけられる、
ことを特徴とする請求項16に記載の光子検知システム。 - 前記半導体材料の前記第1の領域は、該半導体材料の該第1の領域が第1の電圧でバイアスをかけられるように前記第1の電圧に結合され、前記半導体材料の前記第2の領域は、該半導体材料の該第2の領域が第2の電圧でバイアスをかけられるように前記第2の電圧に結合される、
ことを特徴とする請求項17に記載の光子検知システム。 - 前記フォトダイオードの前記平面接合部は、第3の電圧に結合され、前記第1の領域に結合された前記第1の電圧、及び前記フォトダイオードの前記平面接合部に結合された前記第3の電圧に、前記フォトダイオードの前記平面接合部内の逆バイアスが応答する、
ことを特徴とする請求項18に記載の光子検知システム。 - 前記半導体材料の前記第2の領域内に配置された第2のSPADを含む第2のフォトダイオードをさらに備え、前記DTI構造内に配置された前記ドープ半導体材料は、前記SPADの高電界領域を前記第2のSPADの高電界領域から分離するようにバイアスをかけられる、
ことを特徴とする請求項16に記載の光子検知システム。 - 前記半導体材料の前記第1及び前記第2の領域は、該半導体材料の該第1及び第2の領域が第1の電圧でバイアスをかけられるように前記第1の電圧に結合される、
ことを特徴とする請求項20に記載の光子検知システム。 - 前記半導体材料は、前記半導体材料の前記第1及び第2の領域に結合された共通バイアスノードを含み、該共通バイアスノードは、前記半導体材料の前記第1及び第2の領域が前記第1の電圧でバイアスをかけられるように前記第1の電圧に結合される、
ことを特徴とする請求項21に記載の光子検知システム。 - 前記SPADは、前記半導体材料の背面から照射されるようになっている、
ことを特徴とする請求項16に記載の光子検知システム。 - 前記DTI構造の前記内面を覆う前記誘電体層は、二酸化シリコンを含む、
ことを特徴とする請求項14に記載の光子検知システム。 - 前記DTI構造の内部の誘電体層を覆って配置された前記ドープ半導体材料は、低ドープポリシリコンを含む、
ことを特徴とする請求項14に記載の光子検知システム。
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US13/854,446 US9160949B2 (en) | 2013-04-01 | 2013-04-01 | Enhanced photon detection device with biased deep trench isolation |
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- 2014-03-31 KR KR1020140037936A patent/KR101765990B1/ko active IP Right Grant
- 2014-03-31 EP EP14162895.8A patent/EP2787531A1/en not_active Withdrawn
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US9160949B2 (en) | 2015-10-13 |
TW201440241A (zh) | 2014-10-16 |
CN104103655A (zh) | 2014-10-15 |
KR20140119648A (ko) | 2014-10-10 |
EP2787531A1 (en) | 2014-10-08 |
HK1202706A1 (en) | 2015-10-02 |
JP2014225647A (ja) | 2014-12-04 |
US20140291481A1 (en) | 2014-10-02 |
KR101765990B1 (ko) | 2017-08-07 |
TWI509823B (zh) | 2015-11-21 |
CN104103655B (zh) | 2017-04-12 |
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