JPWO2017056345A1 - 固体撮像装置及びその製造方法 - Google Patents
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- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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Abstract
Description
以上のことに対応する本開示の技術について、以下に説明する。図1は、本開示の例示的固体撮像装置10の断面を模式的に示す図である。
次に、固体撮像装置10の製造方法について、図5〜図8を参照して説明する。
11 半導体基板
12 第1のエピタキシャル層
13 第2のエピタキシャル層
14 光電変換領域
14a 光電変換領域第1層
14b 光電変換領域第2層
15 素子分離領域
15a 素子分離領域第1層
15b 素子分離領域第2層
16 オーバーフロードレイン
17 読み出しゲート
Claims (9)
- 基板上に複数の画素が行列状に配列され、
前記複数の画素のそれぞれは、光電変換領域と、前記光電変換領域の間を分離する素子分離領域とを備え、
前記基板は、半導体基板と、前記半導体基板上に形成された第1のエピタキシャル層と、前記第1のエピタキシャル層上に形成された第2のエピタキシャル層とを含み、
前記光電変換領域及び前記素子分離領域は、前記第1のエピタキシャル層及び前記第2のエピタキシャル層に跨がって形成されていることを特徴とする固体撮像装置。 - 請求項1の固体撮像装置において、
前記素子分離領域は、前記第1のエピタキシャル層及び前記第2のエピタキシャル層に不純物が導入された領域であり、前記素子分離領域の深さ方向の全体に亘って、当該素子分離領域に隣接する前記光電変換領域よりも高いポテンシャルバリアを有することを特徴とする固体撮像装置。 - 請求項1又は2の固体撮像装置において、
前記第2のエピタキシャル層に設けられた部分前記光電変換領域の不純物濃度は、前記第1のエピタキシャル層に設けられた部分の前記光電変換領域の不純物濃度以上であることを特徴とする固体撮像装置。 - 請求項1〜3のいずれか1つの固体撮像装置において、
前記光電変換領域から電荷を読み出すための読出部と、
前記読出部を制御するための読出電極とを備え、
前記読出部のポテンシャルバリアは、前記素子分離領域のポテンシャルバリアよりも低いことを特徴とする固体撮像装置。 - 請求項1〜4のいずれか1つの固体撮像装置において、
前記光電変換領域に発生した過剰電荷を排出するためのドレイン部を備え、
前記ドレイン部のポテンシャルバリアは、前記素子分離領域のポテンシャルバリアよりも低いことを特徴とする固体撮像装置。 - 請求項1〜5のいずれか1つの固体撮像装置において、
前記第1のエピタキシャル層と前記第2のエピタキシャル層との間に少なくとも1つの他のエピタキシャル層を更に備え、
前記光電変換領域及び前記素子分離領域は、前記他のエピタキシャル層にも形成され、
前記少なくとも1つの他のエピタキシャル層及び前記第2のエピタキシャル層に設けられた部分の前記光電変換領域の不純物濃度は、それぞれ、前記基板の深い側に隣接する前記他のエピタキシャル層の1つ又は前記第1のエピタキシャル層に設けられた部分の前記光電変換領域の不純物濃度以上であることを特徴とする固体撮像装置。 - 半導体基板上に、第1のエピタキシャル層を形成する工程と、
前記第1のエピタキシャル層に、光電変換領域第1層及び前記光電変換領域第1層を囲む素子分離領域第1層を形成する工程と、
前記光電変換領域第1層及び前記素子分離領域第1層を覆うように、前記第1のエピタキシャル層上に第2のエピタキシャル層を形成する工程と、
前記第2のエピタキシャル層に、前記光電変換領域第1層上に連続する光電変換領域第2層を形成すると共に、前記素子分離領域第1層上に連続する素子分離領域第2層を形成する工程とを備え、
前記光電変換領域第1層及び前記光電変換領域第2層によって、前記第1のエピタキシャル層及び前記第2のエピタキシャル層に跨がる光電変換領域が構成され、
前記素子分離領域第1層及び前記素子分離領域第2層によって、前記第1のエピタキシャル層及び前記第2のエピタキシャル層に跨がる素子分離領域が構成されることを特徴とする固体撮像装置の製造方法。 - 請求項7の固体撮像装置の製造方法において、
前記素子分離領域第1層及び前記素子分離領域第2層は、前記第1のエピタキシャル層及び前記第2のエピタキシャル層に不純物を導入することにより形成し、前記素子分離領域の深さ方向の全体に亘って、当該素子分離領域に隣接する前記光電変換領域よりもポテンシャルバリアを高くすることを特徴とする固体撮像装置の製造方法。 - 請求項7又は8の固体撮像装置の製造方法において、
前記光電変換領域第2層の不純物濃度を、前記光電変換領域第1層の不純物濃度よりも高くすることを特徴とする固体撮像装置の製造方法。
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JP3457551B2 (ja) | 1998-11-09 | 2003-10-20 | 株式会社東芝 | 固体撮像装置 |
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