JP2012028749A - 発光ダイオード - Google Patents

発光ダイオード Download PDF

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Publication number
JP2012028749A
JP2012028749A JP2011134171A JP2011134171A JP2012028749A JP 2012028749 A JP2012028749 A JP 2012028749A JP 2011134171 A JP2011134171 A JP 2011134171A JP 2011134171 A JP2011134171 A JP 2011134171A JP 2012028749 A JP2012028749 A JP 2012028749A
Authority
JP
Japan
Prior art keywords
light emitting
electrode pad
emitting diode
layer
diode according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2011134171A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012028749A5 (enExample
Inventor
Jong-Gyu Kim
鐘 奎 金
So-La Yi
ソ ラ イ
Hao-Chun Suk
昊 ▲竣▼ 石
Zhen Zhe Shen
鎭 哲 愼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
Original Assignee
Seoul Optodevice Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100070840A external-priority patent/KR101158080B1/ko
Priority claimed from KR1020100106172A external-priority patent/KR101272708B1/ko
Application filed by Seoul Optodevice Co Ltd filed Critical Seoul Optodevice Co Ltd
Publication of JP2012028749A publication Critical patent/JP2012028749A/ja
Publication of JP2012028749A5 publication Critical patent/JP2012028749A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Devices (AREA)
JP2011134171A 2010-07-22 2011-06-16 発光ダイオード Withdrawn JP2012028749A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020100070840A KR101158080B1 (ko) 2010-07-22 2010-07-22 발광다이오드
KR10-2010-0070840 2010-07-22
KR10-2010-0106172 2010-10-28
KR1020100106172A KR101272708B1 (ko) 2010-10-28 2010-10-28 개선된 발광 효율을 갖는 발광다이오드 및 제조방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015142774A Division JP6081536B2 (ja) 2010-07-22 2015-07-17 発光ダイオード

Publications (2)

Publication Number Publication Date
JP2012028749A true JP2012028749A (ja) 2012-02-09
JP2012028749A5 JP2012028749A5 (enExample) 2014-07-31

Family

ID=45497303

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011134171A Withdrawn JP2012028749A (ja) 2010-07-22 2011-06-16 発光ダイオード
JP2015142774A Expired - Fee Related JP6081536B2 (ja) 2010-07-22 2015-07-17 発光ダイオード

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015142774A Expired - Fee Related JP6081536B2 (ja) 2010-07-22 2015-07-17 発光ダイオード

Country Status (5)

Country Link
US (2) US8629471B2 (enExample)
JP (2) JP2012028749A (enExample)
CN (3) CN105529343B (enExample)
TW (1) TWI535076B (enExample)
WO (1) WO2012011749A2 (enExample)

Cited By (15)

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JP2014093532A (ja) * 2012-11-05 2014-05-19 Lg Innotek Co Ltd 発光素子
JP2014096591A (ja) * 2012-11-09 2014-05-22 Lg Innotek Co Ltd 発光素子
JP2014116604A (ja) * 2012-12-06 2014-06-26 Lg Innotek Co Ltd 発光素子
JP2014131038A (ja) * 2012-12-27 2014-07-10 Lg Innotek Co Ltd 発光素子
KR20150042368A (ko) * 2013-10-10 2015-04-21 엘지디스플레이 주식회사 발광다이오드 구조
KR20160020467A (ko) * 2013-07-03 2016-02-23 가부시키가이샤 재팬 디스프레이 발광 소자 표시 장치
JP2016207870A (ja) * 2015-04-24 2016-12-08 日亜化学工業株式会社 発光素子
JP2017504216A (ja) * 2014-01-23 2017-02-02 中国科学院蘇州納米技術与納米▲ファン▼生研究所 ウエハレベル半導体デバイス及びその製造方法
US9787062B2 (en) 2015-09-03 2017-10-10 Fuji Xerox Co., Ltd. Vertical cavity surface emitting laser array and method for manufacturing vertical cavity surface emitting laser array
CN110690242A (zh) * 2015-02-13 2020-01-14 首尔伟傲世有限公司 发光元件
JP2020057821A (ja) * 2013-03-15 2020-04-09 ルミレッズ ホールディング ベーフェー 発光構造及びマウント
JP2021534594A (ja) * 2018-08-10 2021-12-09 ホン−チェン、リンLIN, Hong−Cheng ダイオード装置、ディスプレイパネル及び可撓性ディスプレイ
JP2022179299A (ja) * 2021-05-20 2022-12-02 日亜化学工業株式会社 発光素子
JP2023525648A (ja) * 2020-04-21 2023-06-19 ジェイド バード ディスプレイ（シャンハイ） リミテッド 反射要素を有する発光ダイオードチップ構造
JP2023525649A (ja) * 2020-04-21 2023-06-19 ジェイド バード ディスプレイ（シャンハイ） リミテッド 反射要素を有する発光ダイオードチップ構造

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KR101888604B1 (ko) * 2011-10-28 2018-08-14 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR101871372B1 (ko) * 2011-10-28 2018-08-02 엘지이노텍 주식회사 발광 소자
CN102593284B (zh) * 2012-03-05 2014-06-18 映瑞光电科技(上海)有限公司 隔离深沟槽及其高压led芯片的制造方法
TWI572068B (zh) * 2012-12-07 2017-02-21 晶元光電股份有限公司 發光元件
US9269745B2 (en) * 2012-11-23 2016-02-23 Seoul Viosys Co., Ltd. Light emitting diode having a plurality of light emitting units
WO2014098510A1 (en) 2012-12-21 2014-06-26 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
US9356212B2 (en) 2012-12-21 2016-05-31 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
KR102087935B1 (ko) * 2012-12-27 2020-03-11 엘지이노텍 주식회사 발광 소자
CN106910758B (zh) * 2013-01-09 2020-05-15 新世纪光电股份有限公司 发光装置
DE102014011893B4 (de) * 2013-08-16 2020-10-01 Seoul Viosys Co., Ltd. Leuchtdiode
USD709841S1 (en) * 2013-08-22 2014-07-29 Epistar Corporation Light-emitting diode array
TW201517298A (zh) * 2013-10-17 2015-05-01 Lextar Electronics Corp 發光結構的製造方法
TWI614920B (zh) 2014-05-19 2018-02-11 晶元光電股份有限公司 光電元件及其製造方法
JP6438978B2 (ja) * 2014-06-18 2018-12-19 エックス−セレプリント リミテッドＸ−Ｃｅｌｅｐｒｉｎｔ Ｌｉｍｉｔｅｄ マイクロ組立ｌｅｄディスプレイ
KR101888608B1 (ko) * 2014-10-17 2018-09-20 엘지이노텍 주식회사 발광 소자 패키지 및 조명 장치
KR102231646B1 (ko) * 2014-10-17 2021-03-24 엘지이노텍 주식회사 발광 소자
TWD175295S (zh) * 2015-02-16 2016-05-01 晶元光電股份有限公司 發光二極體陣列之部分
US9905729B2 (en) * 2015-03-27 2018-02-27 Seoul Viosys Co., Ltd. Light emitting diode
US10782002B2 (en) 2016-10-28 2020-09-22 X Display Company Technology Limited LED optical components
CN108183157B (zh) * 2017-11-30 2019-11-12 华灿光电（浙江）有限公司 一种发光二极管及制备方法
JP2019149480A (ja) * 2018-02-27 2019-09-05 豊田合成株式会社 半導体素子、発光装置、および発光装置の製造方法
CN108987425B (zh) * 2018-07-19 2020-09-18 豪威半导体（上海）有限责任公司 微led显示器及其制造方法
CN109765472A (zh) * 2018-12-29 2019-05-17 江西兆驰半导体有限公司 一种非直接电接触式的发光二极管器件的电致发光量测方法
CN109768126B (zh) * 2019-01-07 2020-05-19 华灿光电（浙江）有限公司 一种发光二极管外延片的制造方法
CN211629110U (zh) 2019-05-14 2020-10-02 首尔伟傲世有限公司 发光封装件
US20210057611A1 (en) * 2019-08-21 2021-02-25 Industrial Technology Research Institute Light-emitting device and display apparatus
US12199215B2 (en) 2019-08-21 2025-01-14 Industrial Technology Research Institute Light-emitting device and display apparatus
KR102990576B1 (ko) * 2020-07-24 2026-07-14 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 표시 장치
CN114586184A (zh) * 2021-07-06 2022-06-03 泉州三安半导体科技有限公司 一种高压发光二极管
KR102895315B1 (ko) * 2021-12-23 2025-12-04 삼성디스플레이 주식회사 표시 장치
CN115966642B (zh) * 2022-12-29 2024-03-12 淮安澳洋顺昌光电技术有限公司 一种高压发光二极管芯片
CN116565089A (zh) * 2023-04-21 2023-08-08 厦门三安光电有限公司 一种发光二极管及发光装置
DE102023135556A1 (de) * 2023-12-18 2025-06-18 Ams-Osram International Gmbh Optoelektronisches halbleiterbauelement und vorrichtung zur reinigung eines fluids

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Cited By (23)

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Publication number Priority date Publication date Assignee Title
JP2014093532A (ja) * 2012-11-05 2014-05-19 Lg Innotek Co Ltd 発光素子
JP2014096591A (ja) * 2012-11-09 2014-05-22 Lg Innotek Co Ltd 発光素子
JP2014116604A (ja) * 2012-12-06 2014-06-26 Lg Innotek Co Ltd 発光素子
JP2014131038A (ja) * 2012-12-27 2014-07-10 Lg Innotek Co Ltd 発光素子
JP2020057821A (ja) * 2013-03-15 2020-04-09 ルミレッズ ホールディング ベーフェー 発光構造及びマウント
KR20160020467A (ko) * 2013-07-03 2016-02-23 가부시키가이샤 재팬 디스프레이 발광 소자 표시 장치
KR101692846B1 (ko) 2013-07-03 2017-01-05 가부시키가이샤 재팬 디스프레이 발광 소자 표시 장치
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US20140091338A1 (en) 2014-04-03
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US9202973B2 (en) 2015-12-01
TWI535076B (zh) 2016-05-21
JP2015222826A (ja) 2015-12-10
CN105449086A (zh) 2016-03-30
US8629471B2 (en) 2014-01-14
WO2012011749A2 (en) 2012-01-26
CN105449086B (zh) 2018-03-27
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CN105529343A (zh) 2016-04-27
WO2012011749A3 (en) 2012-04-26

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