JP2008135554A - 半導体発光素子、発光装置及び半導体発光素子の製造方法 - Google Patents
半導体発光素子、発光装置及び半導体発光素子の製造方法 Download PDFInfo
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- JP2008135554A JP2008135554A JP2006320401A JP2006320401A JP2008135554A JP 2008135554 A JP2008135554 A JP 2008135554A JP 2006320401 A JP2006320401 A JP 2006320401A JP 2006320401 A JP2006320401 A JP 2006320401A JP 2008135554 A JP2008135554 A JP 2008135554A
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Abstract
【解決手段】透光性絶縁層18と第2導電型半導体層との界面に介在される介在領域と、第2導電型半導体層上の、透光性絶縁層18を設けた部分を除く領域を覆う被覆領域Aとを有する透光性導電層20を備え、介在領域の層厚が、被覆領域Aの層厚よりも薄く構成できる。これにより、透光性導電層20の被覆領域Aにおける抵抗率を介在領域よりも低くすることができ、第2導電型パッド電極の周囲の発光を増やすことができる上、電流を均一に分散して光の取り出し効率を改善できる。
【選択図】図1
Description
(実施の形態1)
(半導体層)
(n側パッド電極32)
(p側パッド電極30)
(保護膜34)
(透光性絶縁層18)
透光性絶縁層18は高抵抗あるいは絶縁性を備える層であり、これによってp側パッド電極形成領域において、透光性導電層20を、その間に介在させて下層側の第1介在領域B1と、上層側の第2介在領域B2とを絶縁する。また、透光性絶縁層18を設けない領域を導通経路として、透光性導電層20に効率的に通電して電流拡散と低抵抗化とを図る。また透光性絶縁層18は、半導体発光素子からの光を効率よく取り出せるように高い透光性を有する。そのため透光性絶縁層18は、好ましくは酸素を含み、より好ましくは酸化物とし、さらに好ましくはSi、Alよりなる群から選択された少なくとも一種の元素の酸化物とする。具体的には、SiO2、Al2O3等とし、好ましくはSiO2を使用する。透光性絶縁層18の厚さは特に限定するものではなく、数オングストローム〜数μmの厚さで形成可能である。特に、透光性絶縁層18の上面に形成されるp側パッド電極30の金属層と共に設けられる場合の透光性絶縁層18の層厚は、λ/4n3(λは発光波長、n3は絶縁層の屈折率)より大きくし、具体例としては、78nmから1μmとすることが好ましい。透光性絶縁層18は、発光層の上に設けられた電極、金属層に対応して設けられ、電極の例では、パッド電極30、電極の延伸導電部31の少なくとも一方、好ましくは導電部・金属層に比較して大面積若しくは断面幅広のパッド電極に少なくとも設けられ、最も好ましくは両方に対応して設けられる。このような構造は、他の実施の形態、その各例にも同様に適用できる。すなわち、延伸導電部を、透光性絶縁層18を介さずに透光性導電層上に直接設けた構造とすることもできるが、この場合、延伸導電部による光の吸収、損失が発生するため、延伸導電部の断面幅、総面積が大きくなると、その傾向が大きくとなるため、それよりも好ましくは、パッド電極及び延伸導電部を、透光性絶縁層18を介して設ける。その具体例としては、図7の変形例に係るLEDチップ100Dの平面図に示すように、延伸導電部31が、透光性絶縁層18を介して設けられた構造となる。
(透光性導電層20)
(実施の形態2)
(実施の形態3)
(実施の形態4)
(実施の形態5)
(実施の形態6)
(半導体発光素子の製造方法)
(n型半導体層12)
(活性層)
(p型半導体層16)
(第1透光性導電層20a)
(透光性絶縁層18)
(第2透光性導電層20b)
(p側パッド電極30、n側パッド電極32)
(実施例)
100B、100C、100D、200、300、400…LEDチップ
500、600…発光装置
500b、600b…発光素子
10、10B…成長基板;10C…凹凸部
11…バッファ層;12、12B…n型半導体層
14、14B、14b…発光層
16、16B…p型半導体層
18…透光性絶縁層
20、20B…透光性導電層
20a、20c…第1透光性導電層
20b、20d…第2透光性導電層
30、30B…p側パッド電極
31…延伸導電部
32…n側パッド電極
34…保護層
40…サブマウント
42…反射層
44…バンプ
46…ワイヤ
52…リードフレーム
52a…リードフレーム電極
54…カップ
56…蛍光体
58…ボンディングワイヤ
59…モールド
60、60b…樹脂
61…パッケージ
62…キャップ
63…リッド
64…リード電極
65…絶縁封止材
66…導電性ワイヤ
67…窓部
68…コーティング部材
70…GaN系化合物半導体素子
71…サファイア基板
72…n型半導体層
73…発光層
74…p型半導体層
75…透明電極
76…p側パッド電極
77…n側パッド電極
78…保護膜
80…GaN系化合物半導体素子
81…p側パッド電極
82…絶縁膜
83…透明電極
A…被覆領域;B…被覆領域;B1…第1介在領域;B2…第2介在領域
Claims (16)
- 第1導電型の半導体層と、
前記第1導電型半導体層上の少なくとも一部に形成された発光層と、
前記発光層の上に形成された第2導電型の半導体層と、
前記第2導電型半導体層上の少なくとも一部に形成された透光性絶縁層と、
前記透光性絶縁層上の少なくとも一部に形成された第2導電型パッド電極と、
を備える半導体発光素子であって、さらに、
前記透光性絶縁層と第2導電型半導体層との界面に介在される介在領域と、
前記第2導電型半導体層上の、前記透光性絶縁層を設けた部分を除く領域を覆う被覆領域と、
を有する透光性導電層を備え、
前記介在領域の層厚が、被覆領域の層厚よりも薄く構成されてなることを特徴とする半導体発光素子。 - 第1導電型の半導体層と、
前記第1導電型半導体層上の少なくとも一部に形成された発光層と、
前記発光層の上に形成された第2導電型の半導体層と、
前記第2導電型半導体層上の少なくとも一部に形成された透光性絶縁層と、
前記透光性絶縁層上の少なくとも一部に形成された第2導電型パッド電極と、
前記第2導電型半導体層上のほぼ全面を覆う被覆領域と、一部が被覆領域と連続して前記第2導電型半導体層と透光性絶縁層との間に介在される第1介在領域と、前記透光性絶縁層の周囲から上面を被覆して前記第2導電型パッド電極との界面に介在する第2介在領域とを有する第2の透光性導電層と、
を備え、
前記第1介在領域の層厚が、被覆領域の層厚よりも薄く構成されてなることを特徴とする半導体発光素子。 - 第1導電型の半導体層と、
前記第1導電型半導体層上の少なくとも一部に形成された発光層と、
前記発光層の上に形成された第2導電型の半導体層と、
前記第2導電型半導体層上の少なくとも一部に形成された透光性絶縁層と、
前記透光性絶縁層上の少なくとも一部に形成された第2導電型パッド電極と、
前記第2導電型半導体層上のほぼ全面を覆い、一部が前記第2導電型半導体層と透光性絶縁層との間に介在される第1介在領域を含む第1の透光性導電層と、
前記第1の透光性導電層上の、透光性絶縁層を除く領域を被覆する第2被覆領域と、第2被覆領域と連続して前記透光性絶縁層の周囲から上面を被覆して前記第2導電型パッド電極との界面に介在する第2介在領域とを有する第2の透光性導電層と、
を備えることを特徴とする半導体発光素子。 - 請求項1から3のいずれか一に記載の半導体発光素子であって、
前記透光性絶縁層の屈折率を前記第2導電型半導体層よりも低く、かつ
前記第2導電型半導体層と前記透光性絶縁層との間に介在する透光性導電層の層厚が、該発光素子の光の波長λ、前記第1の透光性導電層の屈折率nに対し、略(λ/4n)以下であることを特徴とする半導体発光素子。 - 請求項4に記載の半導体発光素子であって、
前記第2導電型半導体層上で前記透光性絶縁層を除く領域を被覆する被覆領域における透光性導電層の層厚が、該発光素子の光の波長λ、前記第1の透光性導電層の屈折率nに対し、(λ/4n)より大きいことを特徴とする半導体発光素子。 - 請求項1から4のいずれか一に記載の半導体発光素子であって、
前記透光性絶縁層下面の透光性導電層を電流注入領域とすることを特徴とする半導体発光素子。 - 請求項1から4のいずれか一に記載の半導体発光素子であって、
前記第2導電型半導体層と透光性導電層との界面の接触抵抗は、前記透光性絶縁層が形成された領域より、前記第2導電型半導体層表面を被覆する領域が低いことを特徴とする半導体発光素子。 - 請求項3に記載の半導体発光素子であって、
前記第1の透光性導電層と第2の透光性導電層を合わせた層厚が、100nm以下であることを特徴とする半導体発光素子。 - 請求項1から8のいずれか一に記載の半導体発光素子であって、
前記第2導電型層が窒化物半導体層であり、
前記透光性絶縁層の屈折率が、2.46以下であることを特徴とする半導体発光素子。 - 請求項8に記載の半導体発光素子であって、
前記第1の透光性導電層と第2の透光性導電層は、In、Snを含む酸化物材料からなることを特徴とする半導体発光素子。 - 請求項1から10のいずれか一に記載の半導体発光素子であって、
前記第2導電型パッド電極は、上面から見て透光性絶縁層の内部に入っていることを特徴とする半導体発光素子。 - 基板と、
前記基板の上に形成され、一部が露出するように形成されたn型半導体層と、
前記n型半導体層上の少なくとも一部に形成された発光層と、
前記発光層の上に形成されたp型半導体層と、
前記p型半導体層上に形成された透光性絶縁層と、
前記透光性絶縁層上の少なくとも一部に形成されたp側パッド電極と、
前記p型半導体層上のほぼ全面を覆い、一部が前記p型半導体層と透光性絶縁層との間に介在される第1介在領域を含む第1の透光性導電層と、
前記第1の透光性導電層上の、透光性絶縁層を除く領域を被覆する第2被覆領域と、第2被覆領域と連続して前記透光性絶縁層の周囲から上面を被覆して前記p型半導体層との界面に介在する第2介在領域とを有する第2の透光性導電層と、
を備えることを特徴とする半導体発光素子。 - 半導体発光素子と、
前記半導体発光素子が発する光を波長変換する波長変換部材と、
を備える発光装置であって、
前記半導体発光素子が請求項1から12のいずれか一に記載の半導体発光素子であることを特徴とする発光装置。 - 基板と、
前記基板の上に形成され、一部が露出するように形成されたn型半導体層と、
前記n型半導体層上の少なくとも一部に形成された発光層と、
前記発光層の上に形成されたp型半導体層と、
前記p型半導体層上に形成された透光性絶縁層と、
前記透光性絶縁層上の少なくとも一部に形成されたp側パッド電極と、
を有する半導体発光素子の製造方法であって、
基板上に、n型半導体層と、発光層と、p型半導体層を順次積層する工程と、
前記n型半導体層が部分的に露出するようエッチングする工程と、
前記p型半導体層上に接して、略全面に第1の透光性導電層を形成する工程と、
前記第1透光性導電層上の、p側パッド電極を形成する位置に、透光性絶縁層を形成する工程と、
前記第1透光性導電層及び透光性絶縁層の上面に、第2の透光性導電層を形成し、オーミック接触を得るための熱処理を行う工程と、
前記透光性絶縁層上の第2透光性導電層の上面に、略等しい面積のp側パッド電極を形成する工程と、
を含むことを特徴とする半導体発光素子の製造方法。 - 請求項14に記載の半導体発光素子の製造方法であって、さらに、
前記第1透光性導電層の形成後に、オーミック接触を得るための熱処理を行う工程を備え、該熱処理工程により、前記p側パッド電極形成領域において、第2導電型半導体層と透光性導電層との界面の接触抵抗を下げ、電流注入領域とすることを特徴とする半導体発光素子。 - 請求項14に記載の半導体発光素子の製造方法であって、さらに、
前記第1透光性導電層上の透光性絶縁層形成後に、オーミック接触を得るための熱処理を行う工程を備え、該熱処理工程により、前記第2導電型半導体層と透光性導電層との界面の接触抵抗を、前記透光性絶縁層が形成された領域より、前記p側パッド電極以外の第2導電型半導体層表面を被覆する領域で低くすることを特徴とする半導体発光素子。
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