JP2011142324A - 複数の電極パッドを有する発光ダイオード - Google Patents
複数の電極パッドを有する発光ダイオード Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 619
- 239000000758 substrate Substances 0.000 claims abstract description 234
- 239000010410 layer Substances 0.000 description 1095
- 238000000034 method Methods 0.000 description 82
- 238000005530 etching Methods 0.000 description 80
- 238000004519 manufacturing process Methods 0.000 description 34
- 150000004767 nitrides Chemical class 0.000 description 16
- 230000007547 defect Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 7
- 238000000059 patterning Methods 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- -1 for example Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000012780 transparent material Substances 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
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- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
【解決手段】基板と、前記基板上に位置する第1の導電型半導体層と、前記第1の導電型半導体層上に位置する第2の導電型半導体層と、前記第1の導電型半導体層と前記第2の導電型半導体層との間に介在する活性層と、前記第1の導電型半導体層に電気的に接続される第1の電極パッドと、前記第2の導電型半導体層上に位置する第2の電極パッドと、前記第2の導電型半導体層と前記第2の電極パッドとの間に介在し、前記第2の電極パッドを前記第2の導電型半導体層から電気的に絶縁させる絶縁層と、前記第2の電極パッドに接続され、前記第2の導電型半導体層に電気的に接続される少なくとも一つの上部延長部と、を含むことを特徴とする発光ダイオード。
【選択図】図14
Description
一方、前記発光構造体の第1の導電型半導体層は、前記少なくとも二つの発光領域によって共有されてもよい。さらに、前記第1の電極パッドは、前記第2の電極パッドに対向して前記発光構造体の第1の導電型半導体層上に位置してもよい。
・
Claims (17)
- 基板と、
前記基板上に位置する第1の導電型半導体層と、
前記第1の導電型半導体層上に位置する第2の導電型半導体層と、
前記第1の導電型半導体層と前記第2の導電型半導体層との間に介在する活性層と、
前記第1の導電型半導体層に電気的に接続される第1の電極パッドと、
前記第2の導電型半導体層上に位置する第2の電極パッドと、
前記第2の導電型半導体層と前記第2の電極パッドとの間に介在し、前記第2の電極パッドを前記第2の導電型半導体層から電気的に絶縁させる絶縁層と、
前記第2の電極パッドに接続され、前記第2の導電型半導体層に電気的に接続される少なくとも一つの上部延長部と、
を含むことを特徴とする発光ダイオード。 - 前記上部延長部と前記第2の電極パッドを接続する接続部をさらに含み、
前記接続部は前記絶縁層によって前記第2の導電型半導体層から絶縁されることを特徴とする請求項1に記載の発光ダイオード。 - 前記絶縁層は、前記第2の導電型半導体層を覆い、かつ前記第2の導電型半導体層上に少なくとも一つの開口部を有し、
前記少なくとも一つの上部延長部は、前記開口部を介して前記第2の導電型半導体層に電気的に接続されることを特徴とする請求項2に記載の発光ダイオード。 - 前記第2の導電型半導体層にオーミックコンタクトする透明電極層をさらに含み、
前記透明電極層は少なくとも二つの領域に分離され、
前記第2の電極パッドは、前記透明電極層の分離されて露出された第2の導電型半導体層の上部に位置することを特徴とする請求項2に記載の発光ダイオード。 - 前記第2の電極パッドの一部は前記透明電極層の上部に位置し、前記第2の電極パッドの一部と前記透明電極層との間に前記絶縁層が介在することを特徴とする請求項4に記載の発光ダイオード。
- 前記透明電極層が分離された少なくとも二つの領域には、それぞれ前記各上部延長部が電気的に接続されることを特徴とする請求項4に記載の発光ダイオード。
- 前記第1の電極パッドは、前記第2の電極パッドに対向して前記第1の導電型半導体層上に位置することを特徴とする請求項1に記載の発光ダイオード。
- 前記第1の電極パッドから前記第2の電極パッドに向けて延長し、前記第1の導電型半導体層に電気的に接続された第1の下部延長部をさらに含むことを特徴とする請求項7に記載の発光ダイオード。
- 前記第1の下部延長部の端部は、前記第1の電極パッドよりも前記第2の電極パッドに近いことを特徴とする請求項8に記載の発光ダイオード。
- 前記第1の電極パッドから延長する第2の下部延長部をさらに含み、前記第2の下部延長部は前記基板の縁部に沿って延長することを特徴とする請求項9に記載の発光ダイオード。
- 前記第2の導電型半導体層にオーミックコンタクトする透明電極層をさらに含み、
前記透明電極層は少なくとも二つの領域に分離され、
前記第2の電極パッドは、前記透明電極層の分離されて露出された第2の導電型半導体層の上部に位置することを特徴とする請求項1に記載の発光ダイオード。 - 前記透明電極層が分離された少なくとも二つの領域には、それぞれ前記各上部延長部が電気的に接続されることを特徴とする請求項11に記載の発光ダイオード。
- 前記各上部延長部と前記第2の電極パッドを接続する各接続部をさらに含み、
前記各接続部は前記絶縁層によって前記透明電極層から絶縁されることを特徴とする請求項12に記載の発光ダイオード。 - 前記第1の電極パッドは前記第1の導電型半導体層上に位置し、
前記透明電極層及び前記各上部延長部は、前記第1の電極パッドと前記第2の電極パッドを横切る線に対して対称構造を有することを特徴とする請求項13に記載の発光ダイオード。 - 前記第1の電極パッドから前記第2の電極パッドに向けて延長され、前記第1の導電型半導体層に電気的に接続される第1の下部延長部をさらに含むことを特徴とする請求項14に記載の発光ダイオード。
- 前記第1の下部延長部と前記各上部延長部は互いに平行であることを特徴とする請求項15に記載の発光ダイオード。
- 前記絶縁層は、前記透明電極層を覆い、かつ前記透明電極層を露出させる各開口部を有し、
前記各上部延長部は前記絶縁層の前記各開口部を介して前記透明電極層に接続されることを特徴とする請求項15に記載の発光ダイオード。
Applications Claiming Priority (18)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0001090 | 2010-01-07 | ||
KR1020100001089A KR101618799B1 (ko) | 2010-01-07 | 2010-01-07 | 전극패드들을 갖는 발광 다이오드 |
KR10-2010-0001204 | 2010-01-07 | ||
KR1020100001205A KR101615283B1 (ko) | 2010-01-07 | 2010-01-07 | 전극패드들을 갖는 발광 다이오드 |
KR10-2010-0001205 | 2010-01-07 | ||
KR1020100001408A KR101623952B1 (ko) | 2010-01-07 | 2010-01-07 | 전극패드들을 갖는 발광 다이오드 |
KR10-2010-0001089 | 2010-01-07 | ||
KR10-2010-0001408 | 2010-01-07 | ||
KR1020100001204A KR101615277B1 (ko) | 2010-01-07 | 2010-01-07 | 전극패드들을 갖는 발광 다이오드 |
KR1020100001090A KR101618800B1 (ko) | 2010-01-07 | 2010-01-07 | 전극패드들을 갖는 발광 다이오드 |
KR10-2010-0001813 | 2010-01-08 | ||
KR1020100001813A KR101623951B1 (ko) | 2010-01-08 | 2010-01-08 | 전극패드들을 갖는 발광 다이오드 |
KR1020100003396A KR101623950B1 (ko) | 2010-01-14 | 2010-01-14 | 전극패드들을 갖는 발광 다이오드 |
KR10-2010-0003396 | 2010-01-14 | ||
KR10-2010-0003964 | 2010-01-15 | ||
KR1020100003964A KR101625127B1 (ko) | 2010-01-15 | 2010-01-15 | 전극패드들을 갖는 발광 다이오드 |
KR1020100003965A KR101625130B1 (ko) | 2010-01-15 | 2010-01-15 | 전극패드들을 갖는 발광 다이오드 |
KR10-2010-0003965 | 2010-01-15 |
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JP2015109013A Active JP6046209B2 (ja) | 2010-01-07 | 2015-05-28 | 複数の電極パッドを有する発光ダイオード |
JP2016223502A Expired - Fee Related JP6574750B2 (ja) | 2010-01-07 | 2016-11-16 | 発光ダイオード |
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US (7) | US8309971B2 (ja) |
EP (1) | EP2343744B1 (ja) |
JP (3) | JP5755885B2 (ja) |
CN (1) | CN102122694B (ja) |
TW (1) | TWI412165B (ja) |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012011458A1 (ja) * | 2010-07-23 | 2012-01-26 | 日亜化学工業株式会社 | 発光素子 |
CN103178183A (zh) * | 2011-12-26 | 2013-06-26 | Lg伊诺特有限公司 | 发光器件 |
JP2013135018A (ja) * | 2011-12-26 | 2013-07-08 | Sanken Electric Co Ltd | 発光素子 |
JP2015109332A (ja) * | 2013-12-04 | 2015-06-11 | シャープ株式会社 | 半導体発光素子 |
JP2015133386A (ja) * | 2014-01-10 | 2015-07-23 | 旭化成エレクトロニクス株式会社 | 発光素子 |
JP2015153928A (ja) * | 2014-02-17 | 2015-08-24 | 日亜化学工業株式会社 | 半導体発光素子 |
JP2016054308A (ja) * | 2015-11-17 | 2016-04-14 | 日亜化学工業株式会社 | 半導体発光素子 |
US9577152B2 (en) | 2013-12-09 | 2017-02-21 | Nichia Corporation | Light emitting element |
JP7339559B2 (ja) | 2021-05-20 | 2023-09-06 | 日亜化学工業株式会社 | 発光素子 |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012028749A (ja) * | 2010-07-22 | 2012-02-09 | Seoul Opto Devices Co Ltd | 発光ダイオード |
JP5652234B2 (ja) * | 2011-02-07 | 2015-01-14 | 日亜化学工業株式会社 | 半導体発光素子 |
TWI557941B (zh) * | 2011-08-04 | 2016-11-11 | 晶元光電股份有限公司 | 光電元件及其製造方法 |
KR101925915B1 (ko) * | 2011-10-24 | 2018-12-06 | 엘지이노텍 주식회사 | 발광소자 |
TWI479694B (zh) * | 2012-01-11 | 2015-04-01 | Formosa Epitaxy Inc | Light emitting diode wafers |
TWI523269B (zh) * | 2012-03-30 | 2016-02-21 | 晶元光電股份有限公司 | 發光元件 |
TWI572068B (zh) | 2012-12-07 | 2017-02-21 | 晶元光電股份有限公司 | 發光元件 |
US10290773B2 (en) * | 2012-09-13 | 2019-05-14 | Epistar Corporation | Light-emitting device |
TWD154431S (zh) | 2012-10-03 | 2013-07-01 | 晶元光電股份有限公司 | 發光二極體 |
CN102881797B (zh) * | 2012-10-18 | 2015-02-25 | 安徽三安光电有限公司 | 具有电流扩展结构的氮化镓基发光二极管 |
KR101977278B1 (ko) * | 2012-10-29 | 2019-09-10 | 엘지이노텍 주식회사 | 발광 소자 |
TWD157618S (zh) * | 2012-12-07 | 2013-12-01 | 晶元光電股份有限公司 | 發光二極體 |
JP6102677B2 (ja) * | 2012-12-28 | 2017-03-29 | 日亜化学工業株式会社 | 発光素子 |
TWI589025B (zh) * | 2013-01-10 | 2017-06-21 | 晶元光電股份有限公司 | 發光元件 |
EP3011612B1 (en) * | 2013-05-23 | 2020-02-19 | OLEDWorks GmbH | Light-emitting device with alternating arrangement of anode pads and cathode pads |
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WO2014208495A1 (ja) * | 2013-06-28 | 2014-12-31 | シチズンホールディングス株式会社 | Led装置 |
USD718259S1 (en) * | 2013-08-13 | 2014-11-25 | Epistar Corporation | Light-emitting diode device |
TWI597864B (zh) * | 2013-08-27 | 2017-09-01 | 晶元光電股份有限公司 | 具有複數個發光結構之發光元件 |
TW201511362A (zh) * | 2013-09-09 | 2015-03-16 | Lextar Electronics Corp | 發光二極體晶片 |
TWI578565B (zh) * | 2013-09-17 | 2017-04-11 | 隆達電子股份有限公司 | 發光二極體 |
CN103606613B (zh) * | 2013-11-12 | 2016-04-13 | 华灿光电(苏州)有限公司 | 具有对称电极的倒装发光二极管及其制备方法 |
USD719112S1 (en) * | 2013-11-22 | 2014-12-09 | Epistar Corporation | Light-emitting diode device |
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CN110350059A (zh) * | 2014-01-10 | 2019-10-18 | 晶元光电股份有限公司 | 光电元件及其制造方法 |
US9412906B2 (en) * | 2014-02-20 | 2016-08-09 | Epistar Corporation | Light-emitting device |
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USD752527S1 (en) * | 2014-04-30 | 2016-03-29 | Epistar Corporation | Light-emitting diode device |
JP2015216279A (ja) * | 2014-05-12 | 2015-12-03 | 株式会社東芝 | 半導体発光素子 |
US9608168B2 (en) * | 2014-06-13 | 2017-03-28 | Seoul Viosys Co., Ltd. | Light emitting diode |
US9543488B2 (en) * | 2014-06-23 | 2017-01-10 | Seoul Viosys Co., Ltd. | Light emitting device |
KR102357289B1 (ko) * | 2014-07-01 | 2022-02-03 | 서울바이오시스 주식회사 | 발광 소자 |
TWI625868B (zh) * | 2014-07-03 | 2018-06-01 | 晶元光電股份有限公司 | 光電元件及其製造方法 |
CN112510131B (zh) * | 2014-07-10 | 2024-09-13 | 晶元光电股份有限公司 | 光电元件及其制造方法 |
KR20160037060A (ko) * | 2014-09-26 | 2016-04-05 | 서울바이오시스 주식회사 | 발광소자 및 그 제조 방법 |
USD770989S1 (en) * | 2015-02-23 | 2016-11-08 | Seoul Viosys Co., Ltd. | Light emitting diode |
DE102015104144A1 (de) * | 2015-03-19 | 2016-09-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers |
US9905729B2 (en) * | 2015-03-27 | 2018-02-27 | Seoul Viosys Co., Ltd. | Light emitting diode |
USD775090S1 (en) * | 2015-04-23 | 2016-12-27 | Seoul Viosys Co., Ltd. | Light emitting diode |
USD845920S1 (en) * | 2015-08-12 | 2019-04-16 | Epistar Corporation | Portion of light-emitting diode unit |
TWI641166B (zh) * | 2015-10-16 | 2018-11-11 | 南韓商首爾偉傲世有限公司 | 小型發光二極體晶片 |
USD783548S1 (en) * | 2015-11-05 | 2017-04-11 | Epistar Corporation | Portions of light-emitting device |
US9530934B1 (en) * | 2015-12-22 | 2016-12-27 | Epistar Corporation | Light-emitting device |
KR102443694B1 (ko) | 2016-03-11 | 2022-09-15 | 삼성전자주식회사 | 전류 확산 특성 및 광 추출 효율을 향상시킬 수 있는 발광 소자 |
US10026777B2 (en) * | 2016-12-19 | 2018-07-17 | Samsung Display Co., Ltd. | Light emitting device and manufacturing method of the light emitting device |
KR102608517B1 (ko) | 2016-12-29 | 2023-12-04 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
US10475962B2 (en) * | 2017-02-15 | 2019-11-12 | Epistar Corporation | Optoelectronic device |
WO2018186655A1 (ko) * | 2017-04-03 | 2018-10-11 | 엘지이노텍 주식회사 | 반도체 소자 및 이를 포함하는 반도체 소자 패키지 |
DE102017111123A1 (de) | 2017-05-22 | 2018-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
KR102499308B1 (ko) * | 2017-08-11 | 2023-02-14 | 서울바이오시스 주식회사 | 발광 다이오드 |
KR102345618B1 (ko) | 2017-09-01 | 2021-12-31 | 삼성전자주식회사 | 발광 다이오드 및 그의 제조 방법 |
JP7094694B2 (ja) * | 2017-12-01 | 2022-07-04 | キヤノン株式会社 | 発光素子アレイ及びこれを用いた露光ヘッドと画像形成装置 |
CN110060964B (zh) * | 2018-04-18 | 2021-01-22 | 友达光电股份有限公司 | 元件基板、显示面板及拼接显示器 |
TWI661574B (zh) * | 2018-06-06 | 2019-06-01 | 友達光電股份有限公司 | 微型發光二極體顯示器、微型發光二極體元件及其製作方法 |
KR102624112B1 (ko) | 2018-10-23 | 2024-01-12 | 서울바이오시스 주식회사 | 플립칩형 발광 다이오드 칩 |
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US11468122B2 (en) * | 2019-06-11 | 2022-10-11 | Microsoft Technology Licensing, Llc | Shared memory space management for conversational artificial intelligence system |
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TWD219684S (zh) * | 2021-07-09 | 2022-07-01 | 晶元光電股份有限公司 | 發光二極體之部分 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001345480A (ja) * | 2000-03-31 | 2001-12-14 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子 |
US20030218176A1 (en) * | 2002-05-24 | 2003-11-27 | Yongsheng Zhao | High power, high luminous flux light emitting diode and method of making same |
JP2006108619A (ja) * | 2004-10-08 | 2006-04-20 | Kokuren Koden Kagi Kofun Yugenkoshi | 点光源発光ダイオードおよびその製造方法 |
JP2007049160A (ja) * | 2005-08-09 | 2007-02-22 | Samsung Electro Mech Co Ltd | 窒化物半導体発光素子 |
JP2007281426A (ja) * | 2006-04-04 | 2007-10-25 | Samsung Electro-Mechanics Co Ltd | 窒化物系半導体発光素子 |
JP2008135554A (ja) * | 2006-11-28 | 2008-06-12 | Nichia Chem Ind Ltd | 半導体発光素子、発光装置及び半導体発光素子の製造方法 |
JP2008166784A (ja) * | 2007-01-03 | 2008-07-17 | Samsung Electro Mech Co Ltd | 窒化物半導体発光素子 |
JP2009537982A (ja) * | 2006-05-19 | 2009-10-29 | ブリッジラックス インコーポレイテッド | Led用低光学損失電極構造体 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW365071B (en) | 1996-09-09 | 1999-07-21 | Toshiba Corp | Semiconductor light emitting diode and method for manufacturing the same |
JPH10308533A (ja) * | 1997-05-09 | 1998-11-17 | Toshiba Corp | 窒化ガリウム系化合物半導体発光素子およびその製造方法ならびに発光装置 |
US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
US6777805B2 (en) | 2000-03-31 | 2004-08-17 | Toyoda Gosei Co., Ltd. | Group-III nitride compound semiconductor device |
KR100391373B1 (ko) * | 2000-10-13 | 2003-07-16 | 광주과학기술원 | 반사막이 삽입된 p형 전극구조를 가지는 질화물계 발광다이오드 및 그 제조방법 |
JP2003124504A (ja) | 2001-10-18 | 2003-04-25 | Toshiba Corp | 半導体発光装置、および半導体発光装置の製造方法 |
US6858873B2 (en) * | 2002-01-23 | 2005-02-22 | Chia Ta World Co Ltd | Semiconductor diode having a semiconductor die with a substrate and multiple films applied thereover |
TW513821B (en) * | 2002-02-01 | 2002-12-11 | Hsiu-Hen Chang | Electrode structure of LED and manufacturing the same |
JP2008135789A (ja) * | 2002-05-27 | 2008-06-12 | Nichia Chem Ind Ltd | 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置 |
JP3912219B2 (ja) * | 2002-08-01 | 2007-05-09 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
JP2004172189A (ja) * | 2002-11-18 | 2004-06-17 | Shiro Sakai | 窒化物系半導体装置及びその製造方法 |
TWI327781B (en) * | 2003-02-19 | 2010-07-21 | Nichia Corp | Nitride semiconductor device |
US7482638B2 (en) * | 2003-08-29 | 2009-01-27 | Philips Lumileds Lighting Company, Llc | Package for a semiconductor light emitting device |
JP2007081312A (ja) * | 2005-09-16 | 2007-03-29 | Showa Denko Kk | 窒化物系半導体発光素子の製造方法 |
JP2007184411A (ja) * | 2006-01-06 | 2007-07-19 | Sony Corp | 発光ダイオードおよびその製造方法ならびに集積型発光ダイオードおよびその製造方法ならびに発光ダイオードバックライトならびに発光ダイオード照明装置ならびに発光ダイオードディスプレイならびに電子機器ならびに電子装置およびその製造方法 |
JP2008034822A (ja) * | 2006-06-28 | 2008-02-14 | Nichia Chem Ind Ltd | 半導体発光素子 |
JP2008047871A (ja) * | 2006-07-18 | 2008-02-28 | Mitsubishi Electric Corp | 半導体発光ダイオード |
TW200820466A (en) * | 2006-10-31 | 2008-05-01 | Genesis Photonics Inc | High brightness light-emitting diode and manufacturing method thereof |
JP4882792B2 (ja) * | 2007-02-25 | 2012-02-22 | 日亜化学工業株式会社 | 半導体発光素子 |
JP2008227109A (ja) * | 2007-03-12 | 2008-09-25 | Mitsubishi Chemicals Corp | GaN系LED素子および発光装置 |
JP5045248B2 (ja) * | 2007-06-01 | 2012-10-10 | 日亜化学工業株式会社 | 半導体発光素子およびその製造方法 |
JP2009021349A (ja) * | 2007-07-11 | 2009-01-29 | Rohm Co Ltd | 半導体発光素子の製造方法及び半導体発光素子 |
KR100941766B1 (ko) * | 2007-08-08 | 2010-02-11 | 한국광기술원 | 패드 재배열을 이용한 반도체 발광 다이오드 및 그의제조방법 |
JP5178360B2 (ja) * | 2007-09-14 | 2013-04-10 | シャープ株式会社 | 窒化物半導体発光素子 |
US8115222B2 (en) | 2008-01-16 | 2012-02-14 | Rohm Co., Ltd. | Semiconductor light emitting device and fabrication method for the semiconductor light emitting device |
TWI464900B (zh) * | 2008-11-26 | 2014-12-11 | Epistar Corp | 光電半導體裝置 |
KR101055768B1 (ko) * | 2009-12-14 | 2011-08-11 | 서울옵토디바이스주식회사 | 전극패드들을 갖는 발광 다이오드 |
US20110272730A1 (en) * | 2010-05-06 | 2011-11-10 | Theleds Co., Ltd. | Light emitting device |
-
2010
- 2010-12-16 WO PCT/KR2010/009008 patent/WO2011083923A2/en active Application Filing
- 2010-12-21 US US12/974,917 patent/US8309971B2/en active Active
-
2011
- 2011-01-04 EP EP11150117.7A patent/EP2343744B1/en active Active
- 2011-01-04 TW TW100100166A patent/TWI412165B/zh active
- 2011-01-05 JP JP2011000833A patent/JP5755885B2/ja active Active
- 2011-01-07 CN CN2011100060460A patent/CN102122694B/zh active Active
-
2012
- 2012-09-14 US US13/617,810 patent/US8436369B2/en active Active
-
2013
- 2013-04-15 US US13/862,713 patent/US8742449B2/en active Active
-
2014
- 2014-03-28 US US14/229,672 patent/US9012952B2/en active Active
- 2014-03-31 US US14/231,043 patent/US9018669B2/en active Active
-
2015
- 2015-03-11 US US14/645,227 patent/US9419180B2/en active Active
- 2015-05-28 JP JP2015109013A patent/JP6046209B2/ja active Active
-
2016
- 2016-07-01 US US15/200,633 patent/US9793440B2/en active Active
- 2016-11-16 JP JP2016223502A patent/JP6574750B2/ja not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001345480A (ja) * | 2000-03-31 | 2001-12-14 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子 |
US20030218176A1 (en) * | 2002-05-24 | 2003-11-27 | Yongsheng Zhao | High power, high luminous flux light emitting diode and method of making same |
JP2006108619A (ja) * | 2004-10-08 | 2006-04-20 | Kokuren Koden Kagi Kofun Yugenkoshi | 点光源発光ダイオードおよびその製造方法 |
JP2007049160A (ja) * | 2005-08-09 | 2007-02-22 | Samsung Electro Mech Co Ltd | 窒化物半導体発光素子 |
JP2007281426A (ja) * | 2006-04-04 | 2007-10-25 | Samsung Electro-Mechanics Co Ltd | 窒化物系半導体発光素子 |
JP2009537982A (ja) * | 2006-05-19 | 2009-10-29 | ブリッジラックス インコーポレイテッド | Led用低光学損失電極構造体 |
JP2008135554A (ja) * | 2006-11-28 | 2008-06-12 | Nichia Chem Ind Ltd | 半導体発光素子、発光装置及び半導体発光素子の製造方法 |
JP2008166784A (ja) * | 2007-01-03 | 2008-07-17 | Samsung Electro Mech Co Ltd | 窒化物半導体発光素子 |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5170325B2 (ja) * | 2010-07-23 | 2013-03-27 | 日亜化学工業株式会社 | 発光素子 |
US8466487B2 (en) | 2010-07-23 | 2013-06-18 | Nichia Corporation | Light emitting element with extended electrodes structure |
WO2012011458A1 (ja) * | 2010-07-23 | 2012-01-26 | 日亜化学工業株式会社 | 発光素子 |
US10128412B2 (en) | 2011-12-26 | 2018-11-13 | Lg Innotek Co., Ltd. | Light emitting device |
CN103178183A (zh) * | 2011-12-26 | 2013-06-26 | Lg伊诺特有限公司 | 发光器件 |
JP2013135018A (ja) * | 2011-12-26 | 2013-07-08 | Sanken Electric Co Ltd | 発光素子 |
JP2013135234A (ja) * | 2011-12-26 | 2013-07-08 | Lg Innotek Co Ltd | 発光素子 |
JP2015109332A (ja) * | 2013-12-04 | 2015-06-11 | シャープ株式会社 | 半導体発光素子 |
US10593840B2 (en) | 2013-12-09 | 2020-03-17 | Nichia Corporation | Light emitting element |
US9577152B2 (en) | 2013-12-09 | 2017-02-21 | Nichia Corporation | Light emitting element |
US9882093B2 (en) | 2013-12-09 | 2018-01-30 | Nichia Corporation | Light emitting element |
US10276751B2 (en) | 2013-12-09 | 2019-04-30 | Nichia Corporation | Light emitting element |
US10978617B2 (en) | 2013-12-09 | 2021-04-13 | Nichia Corporation | Light emitting element |
US11817529B2 (en) | 2013-12-09 | 2023-11-14 | Nichia Corporation | Light emitting element |
US12068437B2 (en) | 2013-12-09 | 2024-08-20 | Nichia Corporation | Light emitting element |
JP2015133386A (ja) * | 2014-01-10 | 2015-07-23 | 旭化成エレクトロニクス株式会社 | 発光素子 |
US9472724B2 (en) | 2014-02-17 | 2016-10-18 | Nichia Corporation | Semiconductor light emitting element |
JP2015153928A (ja) * | 2014-02-17 | 2015-08-24 | 日亜化学工業株式会社 | 半導体発光素子 |
JP2016054308A (ja) * | 2015-11-17 | 2016-04-14 | 日亜化学工業株式会社 | 半導体発光素子 |
JP7339559B2 (ja) | 2021-05-20 | 2023-09-06 | 日亜化学工業株式会社 | 発光素子 |
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JP5755885B2 (ja) | 2015-07-29 |
US20160315226A1 (en) | 2016-10-27 |
CN102122694A (zh) | 2011-07-13 |
US20140209966A1 (en) | 2014-07-31 |
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US8309971B2 (en) | 2012-11-13 |
TW201131836A (en) | 2011-09-16 |
TWI412165B (zh) | 2013-10-11 |
EP2343744B1 (en) | 2020-03-11 |
US20130009197A1 (en) | 2013-01-10 |
EP2343744A3 (en) | 2014-08-20 |
US9012952B2 (en) | 2015-04-21 |
US9419180B2 (en) | 2016-08-16 |
US8742449B2 (en) | 2014-06-03 |
WO2011083923A3 (en) | 2011-09-29 |
WO2011083923A2 (en) | 2011-07-14 |
JP2017041653A (ja) | 2017-02-23 |
US20140209962A1 (en) | 2014-07-31 |
EP2343744A2 (en) | 2011-07-13 |
CN102122694B (zh) | 2013-07-03 |
US20110163346A1 (en) | 2011-07-07 |
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