JP2012009425A5 - - Google Patents
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- Publication number
- JP2012009425A5 JP2012009425A5 JP2011116719A JP2011116719A JP2012009425A5 JP 2012009425 A5 JP2012009425 A5 JP 2012009425A5 JP 2011116719 A JP2011116719 A JP 2011116719A JP 2011116719 A JP2011116719 A JP 2011116719A JP 2012009425 A5 JP2012009425 A5 JP 2012009425A5
- Authority
- JP
- Japan
- Prior art keywords
- metal element
- power storage
- metal
- active material
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003860 storage Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000011149 active material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims 20
- 239000002184 metal Substances 0.000 claims 19
- 238000004519 manufacturing process Methods 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 2
- 239000007773 negative electrode material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011116719A JP5885940B2 (ja) | 2010-05-28 | 2011-05-25 | 蓄電装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010122770 | 2010-05-28 | ||
| JP2010122770 | 2010-05-28 | ||
| JP2011116719A JP5885940B2 (ja) | 2010-05-28 | 2011-05-25 | 蓄電装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012009425A JP2012009425A (ja) | 2012-01-12 |
| JP2012009425A5 true JP2012009425A5 (enExample) | 2014-07-03 |
| JP5885940B2 JP5885940B2 (ja) | 2016-03-16 |
Family
ID=45021952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011116719A Expired - Fee Related JP5885940B2 (ja) | 2010-05-28 | 2011-05-25 | 蓄電装置の作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8852294B2 (enExample) |
| JP (1) | JP5885940B2 (enExample) |
| KR (1) | KR101813574B1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102483812B (zh) * | 2009-08-26 | 2016-07-13 | 凸版印刷株式会社 | 非接触通信媒体 |
| KR101838627B1 (ko) | 2010-05-28 | 2018-03-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 및 그 제작 방법 |
| US9076909B2 (en) | 2010-06-18 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
| WO2011158722A1 (en) | 2010-06-18 | 2011-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| JP5841752B2 (ja) | 2010-07-02 | 2016-01-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9543577B2 (en) | 2010-12-16 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Active material, electrode including the active material and manufacturing method thereof, and secondary battery |
| JP6035054B2 (ja) | 2011-06-24 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極の作製方法 |
| JP6025284B2 (ja) | 2011-08-19 | 2016-11-16 | 株式会社半導体エネルギー研究所 | 蓄電装置用の電極及び蓄電装置 |
| WO2013027561A1 (en) | 2011-08-19 | 2013-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode |
| KR20130024769A (ko) | 2011-08-30 | 2013-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 |
| JP6034621B2 (ja) | 2011-09-02 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極および蓄電装置 |
| JP2013069418A (ja) | 2011-09-20 | 2013-04-18 | Semiconductor Energy Lab Co Ltd | リチウム二次電池およびその製造方法 |
| JP6050106B2 (ja) | 2011-12-21 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 非水二次電池用シリコン負極の製造方法 |
| KR102297634B1 (ko) | 2013-04-19 | 2021-09-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 이차 전지 및 그 제작 방법 |
| JP2016027562A (ja) | 2014-07-04 | 2016-02-18 | 株式会社半導体エネルギー研究所 | 二次電池の作製方法及び製造装置 |
| JP6890375B2 (ja) | 2014-10-21 | 2021-06-18 | 株式会社半導体エネルギー研究所 | 装置 |
| US10403879B2 (en) | 2014-12-25 | 2019-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Electrolytic solution, secondary battery, electronic device, and method of manufacturing electrode |
| JP6723023B2 (ja) | 2015-02-24 | 2020-07-15 | 株式会社半導体エネルギー研究所 | 二次電池用電極の製造方法 |
| US10193139B1 (en) | 2018-02-01 | 2019-01-29 | The Regents Of The University Of California | Redox and ion-adsorbtion electrodes and energy storage devices |
| KR102378651B1 (ko) * | 2019-03-29 | 2022-03-25 | 한양대학교 에리카산학협력단 | 이차전지용 물질막 및 그 제조 방법 |
| KR102326585B1 (ko) * | 2020-01-31 | 2021-11-16 | 경상국립대학교산학협력단 | 이차전지용 전극 및 그의 제조방법 |
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| GB1198900A (en) | 1967-10-25 | 1970-07-15 | Hitachi Ltd | Planar Transistor and Method of Making the Same |
| US4155781A (en) | 1976-09-03 | 1979-05-22 | Siemens Aktiengesellschaft | Method of manufacturing solar cells, utilizing single-crystal whisker growth |
| US5338625A (en) | 1992-07-29 | 1994-08-16 | Martin Marietta Energy Systems, Inc. | Thin film battery and method for making same |
| RU2099808C1 (ru) | 1996-04-01 | 1997-12-20 | Евгений Инвиевич Гиваргизов | Способ выращивания ориентированных систем нитевидных кристаллов и устройство для его осуществления (варианты) |
| US20020168574A1 (en) | 1997-06-27 | 2002-11-14 | Soon-Ho Ahn | Lithium ion secondary battery and manufacturing method of the same |
| CA2388013A1 (en) | 1999-10-22 | 2001-04-26 | Sanyo Electric Co., Ltd. | A rechargeable lithium battery and an electrode therefor |
| KR100520872B1 (ko) | 1999-10-22 | 2005-10-12 | 산요덴키가부시키가이샤 | 리튬 전지용 전극 및 리튬 2차전지 |
| WO2001031723A1 (en) | 1999-10-22 | 2001-05-03 | Sanyo Electric Co., Ltd. | Electrode for lithium secondary cell and lithium secondary cell |
| JP2002083594A (ja) | 1999-10-22 | 2002-03-22 | Sanyo Electric Co Ltd | リチウム電池用電極並びにこれを用いたリチウム電池及びリチウム二次電池 |
| WO2001029913A1 (fr) | 1999-10-22 | 2001-04-26 | Sanyo Electric Co., Ltd. | Procede de production d'un materiau destine a une electrode de pile au lithium |
| CN1189958C (zh) | 1999-10-22 | 2005-02-16 | 三洋电机株式会社 | 可充电锂电池电极的制造方法 |
| AU7950700A (en) | 1999-10-22 | 2001-05-08 | Sanyo Electric Co., Ltd. | Electrode for lithium cell and lithium secondary cell |
| JP2001210315A (ja) | 2000-01-25 | 2001-08-03 | Sanyo Electric Co Ltd | リチウム二次電池用電極及びこれを用いたリチウム二次電池 |
| US6844113B2 (en) | 2001-04-13 | 2005-01-18 | Sanyo Electric Co., Ltd. | Electrode for lithium secondary battery and method for producing the same |
| JP2003246700A (ja) | 2002-02-22 | 2003-09-02 | Japan Science & Technology Corp | シリコンナノニードルの製法 |
| JP4140765B2 (ja) | 2002-09-19 | 2008-08-27 | コバレントマテリアル株式会社 | 針状シリコン結晶およびその製造方法 |
| US7015496B2 (en) | 2002-12-27 | 2006-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Field emission device and manufacturing method thereof |
| JP2004281317A (ja) | 2003-03-18 | 2004-10-07 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用電極材料とその製造方法、ならびにそれを用いた非水電解質二次電池 |
| JP2005116509A (ja) * | 2003-09-18 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用負極とこれを用いた非水電解質二次電池 |
| US9614214B2 (en) | 2004-12-16 | 2017-04-04 | Lg Chem, Ltd. | Method for improvement of performance of si thin film anode for lithium rechargeable battery |
| WO2007094311A1 (ja) | 2006-02-14 | 2007-08-23 | Matsushita Electric Industrial Co., Ltd. | 非水電解質二次電池用電極およびその製造方法、ならびに非水電解質二次電池用電極を備えた非水電解質二次電池 |
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| KR101109285B1 (ko) | 2006-10-19 | 2012-01-31 | 파나소닉 주식회사 | 비수 전해질 2차 전지와 비수 전해질 2차 전지용 음극의제조 방법 |
| JP4445030B2 (ja) * | 2006-12-27 | 2010-04-07 | パナソニック株式会社 | 集電体およびその製造方法 |
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| JP2008269827A (ja) * | 2007-04-17 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 電気化学素子の電極材料およびその製造方法並びにそれを用いた電極極板および電気化学素子 |
| US7816031B2 (en) * | 2007-08-10 | 2010-10-19 | The Board Of Trustees Of The Leland Stanford Junior University | Nanowire battery methods and arrangements |
| JP5169156B2 (ja) | 2007-11-09 | 2013-03-27 | パナソニック株式会社 | 電気化学素子用電極 |
| KR100898293B1 (ko) | 2007-11-27 | 2009-05-18 | 삼성에스디아이 주식회사 | 리튬 이차 전지용 음극 활물질 및 이의 제조 방법 |
| JP2009134917A (ja) | 2007-11-29 | 2009-06-18 | Panasonic Corp | 非水系二次電池用電極板およびこれを用いた非水系二次電池 |
| JP5298609B2 (ja) | 2008-04-08 | 2013-09-25 | ソニー株式会社 | 二次電池用負極および二次電池 |
| US20090317726A1 (en) | 2008-04-08 | 2009-12-24 | Sony Corporation | Anode and secondary battery |
| WO2009125540A1 (ja) | 2008-04-11 | 2009-10-15 | パナソニック株式会社 | エネルギー蓄積デバイス、その製造方法及びそれを搭載した装置 |
| US8927156B2 (en) | 2009-02-19 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
| JP2010262752A (ja) | 2009-04-30 | 2010-11-18 | Furukawa Electric Co Ltd:The | リチウムイオン二次電池用の負極、それを用いたリチウムイオン二次電池、リチウムイオン二次電池用の負極の製造方法 |
| US20100285358A1 (en) * | 2009-05-07 | 2010-11-11 | Amprius, Inc. | Electrode Including Nanostructures for Rechargeable Cells |
| US9061902B2 (en) | 2009-12-18 | 2015-06-23 | The Board Of Trustees Of The Leland Stanford Junior University | Crystalline-amorphous nanowires for battery electrodes |
| WO2011136028A1 (en) | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| WO2011155397A1 (en) * | 2010-06-11 | 2011-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
| US20120003383A1 (en) | 2010-06-30 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of energy storage device |
| JP6035054B2 (ja) | 2011-06-24 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極の作製方法 |
-
2011
- 2011-05-05 US US13/101,598 patent/US8852294B2/en not_active Expired - Fee Related
- 2011-05-16 KR KR1020110045650A patent/KR101813574B1/ko not_active Expired - Fee Related
- 2011-05-25 JP JP2011116719A patent/JP5885940B2/ja not_active Expired - Fee Related
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